JP2011526071A - 光検出器およびその製造方法 - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/36—Devices specially adapted for detecting X-ray radiation
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- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
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Abstract
【選択図】図2
Description
僅かな暗流と埋め込まれたX線吸収材(ナノ粒子またはナノ結晶)を備えた有機フォトダイオードまたは有機光電導体
b)定められた直径を備えた(溶液から作られた)ナノ粒子またはナノ結晶が機械的に粉砕されたため定めにくいナノ粒子と比べて電荷担体トラップの少ない再生可能な吸収材に導かれる。
c)湿式化学的処理により、X線の直接変換用のTFTパネルへのダイオード製造が真空技術および古典的な半導体製法技術を使用せずに実施できる。
d)半導体ポリマー内へのナノ結晶性X線吸収材の埋め込みが大面積処理を可能にする。
e)有機ダイオードの製造がフレキシブルTFT基板上で低い(200℃以下の)処理温度で行うことができる。
f)十分なX線吸収能力を有する数100μmの層がスプレイ被覆法または多重被覆法で得られる。
3 下側電極
4 正孔伝導層
5 有機光伝導層
6 上側電極
7 ナノ粒子
8,12 パッシベーション層
14 X線
15 電子
16 正孔
17 中間層
Claims (14)
- 基板(2)の上に1つ電極(3)と、少なくとも1つの活性有機層(5)と、その上に1つの上側電極(6)とを有し、半導体有機マトリクスの活性層内に、X線を電荷に直接変換することを可能にする半導体ナノ粒子(7)が加えられているX線の直接変換用有機光検出器。
- ナノ粒子(7)がナノ結晶(7)として存在する請求項1記載の光検出器、
- ナノ粒子(7)つまりナノ結晶が化学合成により作られる請求項1または2記載の光検出器。
- ナノ粒子(7)がII−VI族、IV族またはIII−V族の化合物半導体である請求項1ないし3の1つに記載の光検出器。
- ナノ粒子(7)が硫化鉛(PbS)、セレン化鉛(PbSe)、硫化水銀(HgS)、セレン化水銀(HgSe)および/またはテルル化水銀(HgTe)から成る請求項1ないし4の1つに記載の光検出器。
- ナノ粒子(7)が1〜20nmの典型的な直径を有する請求項1ないし5の1つに記載の光検出器。
- 光検出器の有機活性層(5)が100μm以上の層厚を有する請求項1ないし6の1つに記載の光検出器。
- 層厚が中間層(17)を備えた有機活性層(5)の多重化により得られる請求項7記載の光検出器(図3)。
- 層厚がフォトダイオードの積層により生じる請求項7記載の光検出器(図4)。
- 金属層がフォトダイオード(1)の上に配置されている請求項1ないし9の1つに記載の光検出器。
- 活性有機層(5)内のナノ粒子(7)が少なくとも50%の体積割合にある請求項1ないし10の1つに記載の光検出器。
- 少なくとも有機活性層(5)が溶液(湿式化学法)から作られる光検出器の製造方法。
- 有機活性層(5)がスピンコーティング、ブレイドコーティング、プリンティング、ドクターブレイディング、スプレイコーティングおよび/またはローリングにより作られる請求項12記載の光検出器の製造方法。
- 作業工程が最大200℃までの温度で行われる請求項12または13記載の光検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008029782A DE102008029782A1 (de) | 2008-06-25 | 2008-06-25 | Photodetektor und Verfahren zur Herstellung dazu |
DE102008029782.8 | 2008-06-25 | ||
PCT/EP2009/057864 WO2009156419A1 (de) | 2008-06-25 | 2009-06-24 | Photodetektor und verfahren zur herstellung dazu |
Publications (3)
Publication Number | Publication Date |
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JP2011526071A true JP2011526071A (ja) | 2011-09-29 |
JP2011526071A5 JP2011526071A5 (ja) | 2011-11-10 |
JP5460706B2 JP5460706B2 (ja) | 2014-04-02 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011515364A Expired - Fee Related JP5460706B2 (ja) | 2008-06-25 | 2009-06-24 | X線検出器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110095266A1 (ja) |
EP (1) | EP2291861A1 (ja) |
JP (1) | JP5460706B2 (ja) |
CN (1) | CN102077352B (ja) |
DE (1) | DE102008029782A1 (ja) |
WO (1) | WO2009156419A1 (ja) |
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JP2014521207A (ja) * | 2011-07-04 | 2014-08-25 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 暗電流又はリーク電流を制御するためのキャパシタを含むフォトダイオード装置 |
KR20190102182A (ko) * | 2016-10-27 | 2019-09-03 | 실버레이 리미티드 | 다이렉트 변환 방사선 검출기 |
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2009
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- 2009-06-24 EP EP09769268A patent/EP2291861A1/de not_active Withdrawn
- 2009-06-24 WO PCT/EP2009/057864 patent/WO2009156419A1/de active Application Filing
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JP2014521207A (ja) * | 2011-07-04 | 2014-08-25 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 暗電流又はリーク電流を制御するためのキャパシタを含むフォトダイオード装置 |
KR20190102182A (ko) * | 2016-10-27 | 2019-09-03 | 실버레이 리미티드 | 다이렉트 변환 방사선 검출기 |
JP2019537738A (ja) * | 2016-10-27 | 2019-12-26 | シルバーレイ リミテッド | 直接変換型放射線検出器 |
JP7041970B2 (ja) | 2016-10-27 | 2022-03-25 | シルバーレイ リミテッド | 放射線検出装置および方法 |
KR102454412B1 (ko) * | 2016-10-27 | 2022-10-14 | 실버레이 리미티드 | 다이렉트 변환 방사선 검출기 |
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CN102077352B (zh) | 2013-06-05 |
DE102008029782A1 (de) | 2012-03-01 |
JP5460706B2 (ja) | 2014-04-02 |
US20110095266A1 (en) | 2011-04-28 |
WO2009156419A1 (de) | 2009-12-30 |
EP2291861A1 (de) | 2011-03-09 |
CN102077352A (zh) | 2011-05-25 |
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