JP2011525680A5 - - Google Patents
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- Publication number
- JP2011525680A5 JP2011525680A5 JP2011514150A JP2011514150A JP2011525680A5 JP 2011525680 A5 JP2011525680 A5 JP 2011525680A5 JP 2011514150 A JP2011514150 A JP 2011514150A JP 2011514150 A JP2011514150 A JP 2011514150A JP 2011525680 A5 JP2011525680 A5 JP 2011525680A5
- Authority
- JP
- Japan
- Prior art keywords
- flash memory
- word lines
- cell
- cells
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 12
- 239000010979 ruby Substances 0.000 claims 3
- 229910001750 ruby Inorganic materials 0.000 claims 3
- 230000003796 beauty Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7470508P | 2008-06-23 | 2008-06-23 | |
| US61/074,705 | 2008-06-23 | ||
| PCT/IB2009/051703 WO2009156873A1 (en) | 2008-06-23 | 2009-04-26 | Ad hoc flash memory reference cells |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011525680A JP2011525680A (ja) | 2011-09-22 |
| JP2011525680A5 true JP2011525680A5 (enExample) | 2012-05-24 |
| JP5497754B2 JP5497754B2 (ja) | 2014-05-21 |
Family
ID=40810573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011514150A Active JP5497754B2 (ja) | 2008-06-23 | 2009-04-26 | アドホックフラッシュメモリ基準セル |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8321623B2 (enExample) |
| EP (1) | EP2301035B1 (enExample) |
| JP (1) | JP5497754B2 (enExample) |
| KR (1) | KR101434160B1 (enExample) |
| CN (1) | CN102099866A (enExample) |
| TW (1) | TWI515730B (enExample) |
| WO (1) | WO2009156873A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8407428B2 (en) * | 2010-05-20 | 2013-03-26 | Hicamp Systems, Inc. | Structured memory coprocessor |
| US9601199B2 (en) | 2007-01-26 | 2017-03-21 | Intel Corporation | Iterator register for structured memory |
| CN101652758B (zh) | 2007-01-26 | 2013-10-16 | 海坎普系统股份有限公司 | 分级式不可变内容可寻址存储器处理器 |
| KR20100107089A (ko) * | 2009-03-25 | 2010-10-05 | 삼성전자주식회사 | 저장 장치 및 이를 포함하는 데이터 저장 시스템 |
| JP2012069181A (ja) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | 半導体記憶装置 |
| KR102049258B1 (ko) * | 2013-03-15 | 2019-11-28 | 삼성전자주식회사 | 레퍼런스 셀을 포함하는 불휘발성 메모리 장치 및 그것의 데이터 관리 방법 및 |
| KR101628925B1 (ko) * | 2014-06-17 | 2016-06-10 | 고려대학교 산학협력단 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| US9361030B2 (en) * | 2014-08-20 | 2016-06-07 | Sandisk Technologies Inc. | Temperature accelerated stress time |
| US9478303B1 (en) | 2015-04-29 | 2016-10-25 | Sandisk Technologies Llc | System and method for measuring data retention in a non-volatile memory |
| TWI670717B (zh) | 2016-09-13 | 2019-09-01 | 東芝記憶體股份有限公司 | 記憶裝置及記憶體系統 |
| US10388368B2 (en) * | 2017-10-31 | 2019-08-20 | Seagate Technology Llc | Adaptive read threshold voltage tracking with charge leakage mitigation using charge leakage settling time |
| US10276233B1 (en) | 2017-10-31 | 2019-04-30 | Seagate Technology Llc | Adaptive read threshold voltage tracking with charge leakage mitigation using threshold voltage offsets |
| CN110610738B (zh) * | 2018-06-15 | 2023-08-18 | 硅存储技术公司 | 用于闪存存储器系统的改进的感测放大器 |
| US10628072B2 (en) * | 2018-08-21 | 2020-04-21 | Samsung Electronics Co., Ltd. | Scalable architecture enabling large memory system for in-memory computations |
| TWI690929B (zh) * | 2019-04-11 | 2020-04-11 | 點序科技股份有限公司 | 記憶體裝置及其讀取參考電壓的調整方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0935255A2 (en) | 1989-04-13 | 1999-08-11 | SanDisk Corporation | Flash EEPROM system |
| JP3202042B2 (ja) * | 1991-07-29 | 2001-08-27 | 株式会社日立製作所 | 半導体記憶装置 |
| JP2000173275A (ja) * | 1998-12-08 | 2000-06-23 | Hitachi Ltd | 不揮発性メモリ及びメモリシステム |
| US6469945B2 (en) * | 2000-05-25 | 2002-10-22 | Tachyon Semiconductor Corp. | Dynamically configurated storage array with improved data access |
| US6501675B2 (en) * | 2001-05-14 | 2002-12-31 | International Business Machines Corporation | Alternating reference wordline scheme for fast DRAM |
| US6490212B1 (en) * | 2001-07-11 | 2002-12-03 | Silicon Storage Technology, Inc. | Bitline precharge matching |
| JP2004013961A (ja) * | 2002-06-04 | 2004-01-15 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| JP4208500B2 (ja) * | 2002-06-27 | 2009-01-14 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
| JP3821066B2 (ja) * | 2002-07-04 | 2006-09-13 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| JP2004062922A (ja) * | 2002-07-25 | 2004-02-26 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| US6882567B1 (en) * | 2002-12-06 | 2005-04-19 | Multi Level Memory Technology | Parallel programming of multiple-bit-per-cell memory cells on a continuous word line |
| EP1624463A1 (en) * | 2004-07-14 | 2006-02-08 | STMicroelectronics S.r.l. | A Programmable memory device with an improved redundancy structure |
| JP2007265589A (ja) * | 2006-03-30 | 2007-10-11 | Fujitsu Ltd | 不揮発性半導体メモリ |
| JP5189868B2 (ja) * | 2008-03-21 | 2013-04-24 | シチズン時計株式会社 | 不揮発性半導体記憶装置 |
-
2009
- 2009-04-26 CN CN2009801282411A patent/CN102099866A/zh active Pending
- 2009-04-26 EP EP09769683.5A patent/EP2301035B1/en not_active Not-in-force
- 2009-04-26 JP JP2011514150A patent/JP5497754B2/ja active Active
- 2009-04-26 WO PCT/IB2009/051703 patent/WO2009156873A1/en not_active Ceased
- 2009-04-26 KR KR1020117001406A patent/KR101434160B1/ko not_active Expired - Fee Related
- 2009-05-03 US US12/434,650 patent/US8321623B2/en active Active
- 2009-05-12 TW TW098115732A patent/TWI515730B/zh not_active IP Right Cessation
-
2012
- 2012-10-10 US US13/648,838 patent/US8874832B2/en active Active
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