CN102099866A - 专用闪存参考单元 - Google Patents

专用闪存参考单元 Download PDF

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Publication number
CN102099866A
CN102099866A CN2009801282411A CN200980128241A CN102099866A CN 102099866 A CN102099866 A CN 102099866A CN 2009801282411 A CN2009801282411 A CN 2009801282411A CN 200980128241 A CN200980128241 A CN 200980128241A CN 102099866 A CN102099866 A CN 102099866A
Authority
CN
China
Prior art keywords
unit
flash memory
word lines
lines
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801282411A
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English (en)
Chinese (zh)
Inventor
马克.穆林
伊兰.沙伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Digital Israel Ltd
Original Assignee
SanDisk IL Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk IL Ltd filed Critical SanDisk IL Ltd
Publication of CN102099866A publication Critical patent/CN102099866A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN2009801282411A 2008-06-23 2009-04-26 专用闪存参考单元 Pending CN102099866A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7470508P 2008-06-23 2008-06-23
US61/074,705 2008-06-23
PCT/IB2009/051703 WO2009156873A1 (en) 2008-06-23 2009-04-26 Ad hoc flash memory reference cells

Publications (1)

Publication Number Publication Date
CN102099866A true CN102099866A (zh) 2011-06-15

Family

ID=40810573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801282411A Pending CN102099866A (zh) 2008-06-23 2009-04-26 专用闪存参考单元

Country Status (7)

Country Link
US (2) US8321623B2 (enExample)
EP (1) EP2301035B1 (enExample)
JP (1) JP5497754B2 (enExample)
KR (1) KR101434160B1 (enExample)
CN (1) CN102099866A (enExample)
TW (1) TWI515730B (enExample)
WO (1) WO2009156873A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690929B (zh) * 2019-04-11 2020-04-11 點序科技股份有限公司 記憶體裝置及其讀取參考電壓的調整方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8407428B2 (en) * 2010-05-20 2013-03-26 Hicamp Systems, Inc. Structured memory coprocessor
US9601199B2 (en) 2007-01-26 2017-03-21 Intel Corporation Iterator register for structured memory
CN101652758B (zh) 2007-01-26 2013-10-16 海坎普系统股份有限公司 分级式不可变内容可寻址存储器处理器
KR20100107089A (ko) * 2009-03-25 2010-10-05 삼성전자주식회사 저장 장치 및 이를 포함하는 데이터 저장 시스템
JP2012069181A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
KR102049258B1 (ko) * 2013-03-15 2019-11-28 삼성전자주식회사 레퍼런스 셀을 포함하는 불휘발성 메모리 장치 및 그것의 데이터 관리 방법 및
KR101628925B1 (ko) * 2014-06-17 2016-06-10 고려대학교 산학협력단 메모리 시스템 및 메모리 시스템의 동작 방법
US9361030B2 (en) * 2014-08-20 2016-06-07 Sandisk Technologies Inc. Temperature accelerated stress time
US9478303B1 (en) 2015-04-29 2016-10-25 Sandisk Technologies Llc System and method for measuring data retention in a non-volatile memory
TWI670717B (zh) 2016-09-13 2019-09-01 東芝記憶體股份有限公司 記憶裝置及記憶體系統
US10276233B1 (en) 2017-10-31 2019-04-30 Seagate Technology Llc Adaptive read threshold voltage tracking with charge leakage mitigation using threshold voltage offsets
US10388368B2 (en) * 2017-10-31 2019-08-20 Seagate Technology Llc Adaptive read threshold voltage tracking with charge leakage mitigation using charge leakage settling time
CN110610738B (zh) * 2018-06-15 2023-08-18 硅存储技术公司 用于闪存存储器系统的改进的感测放大器
US10628072B2 (en) * 2018-08-21 2020-04-21 Samsung Electronics Co., Ltd. Scalable architecture enabling large memory system for in-memory computations

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617363B1 (en) * 1989-04-13 2000-01-26 SanDisk Corporation Defective cell substitution in EEprom array
JP3202042B2 (ja) * 1991-07-29 2001-08-27 株式会社日立製作所 半導体記憶装置
JP2000173275A (ja) * 1998-12-08 2000-06-23 Hitachi Ltd 不揮発性メモリ及びメモリシステム
US6469945B2 (en) * 2000-05-25 2002-10-22 Tachyon Semiconductor Corp. Dynamically configurated storage array with improved data access
US6501675B2 (en) * 2001-05-14 2002-12-31 International Business Machines Corporation Alternating reference wordline scheme for fast DRAM
US6490212B1 (en) * 2001-07-11 2002-12-03 Silicon Storage Technology, Inc. Bitline precharge matching
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4208500B2 (ja) * 2002-06-27 2009-01-14 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP3821066B2 (ja) * 2002-07-04 2006-09-13 日本電気株式会社 磁気ランダムアクセスメモリ
JP2004062922A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 不揮発性半導体記憶装置
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
EP1624463A1 (en) * 2004-07-14 2006-02-08 STMicroelectronics S.r.l. A Programmable memory device with an improved redundancy structure
JP2007265589A (ja) * 2006-03-30 2007-10-11 Fujitsu Ltd 不揮発性半導体メモリ
JP5189868B2 (ja) * 2008-03-21 2013-04-24 シチズン時計株式会社 不揮発性半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI690929B (zh) * 2019-04-11 2020-04-11 點序科技股份有限公司 記憶體裝置及其讀取參考電壓的調整方法

Also Published As

Publication number Publication date
WO2009156873A1 (en) 2009-12-30
TW201001425A (en) 2010-01-01
US20130097368A1 (en) 2013-04-18
EP2301035B1 (en) 2014-10-01
TWI515730B (zh) 2016-01-01
EP2301035A1 (en) 2011-03-30
JP5497754B2 (ja) 2014-05-21
US8874832B2 (en) 2014-10-28
KR20110033221A (ko) 2011-03-30
US8321623B2 (en) 2012-11-27
US20090319722A1 (en) 2009-12-24
JP2011525680A (ja) 2011-09-22
KR101434160B1 (ko) 2014-08-27

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Open date: 20110615