JP2011524632A - 傾斜領域を含む半導体発光デバイス - Google Patents
傾斜領域を含む半導体発光デバイス Download PDFInfo
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- JP2011524632A JP2011524632A JP2011513108A JP2011513108A JP2011524632A JP 2011524632 A JP2011524632 A JP 2011524632A JP 2011513108 A JP2011513108 A JP 2011513108A JP 2011513108 A JP2011513108 A JP 2011513108A JP 2011524632 A JP2011524632 A JP 2011524632A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 110
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (18)
- n型領域とp型領域との間に配置されたIII-P発光層を有する半導体構造体と、
GaP窓層と、
前記p型領域と前記GaP窓層との間に配置された傾斜領域とを有し、
アルミニウムの組成は、前記傾斜領域において傾斜され、前記傾斜領域は、少なくとも150nmの厚さをもつ、デバイス。 - 前記傾斜領域におけるアルミニウムの前記組成は、前記p型領域における組成からゼロに傾斜される、請求項1に記載のデバイス。
- 前記p型領域は、前記傾斜領域と直接接触する(AlxGa1-x)yIn1-yP(x≧0.4)の層を有する、請求項1に記載のデバイス。
- 前記p型領域は、前記傾斜領域と直接接触するAlInP層を有する、請求項1に記載のデバイス。
- 前記傾斜領域は、第1の傾斜領域であり、
当該デバイスは、
エッチング停止層と、
前記エッチング停止層と前記n型領域との間に配置された第2の傾斜領域とを有し、
アルミニウムの組成は、前記第2の傾斜領域において傾斜される、請求項1に記載のデバイス。 - 前記第2の傾斜領域におけるアルミニウムの前記組成は、ゼロから前記n型領域における組成に傾斜される、請求項5に記載のデバイス。
- 前記傾斜領域と直接接触するエッチング停止層は、InGaPであり、
前記傾斜領域と直接接触するn型領域は、(AlxGa1-x)yIn1-yP(x≧0.4)である、請求項5に記載のデバイス。 - 前記第2の傾斜層の厚さは、40nmよりも大きい、請求項5に記載のデバイス。
- 前記傾斜領域におけるアルミニウムの前記組成は、前記p型領域における組成から非ゼロ値に傾斜される、請求項1に記載のデバイス。
- 前記傾斜領域におけるインジウムの組成は、GaAsにマッチした格子の組成から、GaAsにマッチした格子ではない組成に変化する、請求項1に記載のデバイス。
- n型領域とp型領域との間に配置されたIII-P発光層を有する半導体構造体と、
GaP窓層と、
前記p型領域と前記GaP窓層との間に配置された傾斜領域とを有し、
アルミニウムの組成は、前記傾斜領域において傾斜され、
前記傾斜領域は、第1の傾斜プロファイルをもつ第1の部分と、第2の傾斜プロファイルをもつ第2の傾斜部分とを有する、デバイス。 - 前記傾斜領域は、少なくとも100nmの厚さをもつ、請求項11に記載のデバイス。
- 前記傾斜領域は、少なくとも300nmの厚さをもつ、請求項11に記載のデバイス。
- 前記第1の部分が前記p型領域に隣接し、前記第2の部分が前記窓層に隣接し、
前記第1の部分におけるアルミニウム組成は、前記p型領域におけるアルミニウム組成から前記発光層におけるアルミニウム組成に傾斜され、
前記第2の部分におけるアルミニウム組成は、前記発光層におけるアルミニウム組成から前記発光層におけるアルミニウム組成よりも少ないアルミニウム組成に傾斜される、請求項11に記載のデバイス。 - 前記第2の部分における前記アルミニウム組成は、前記発光層におけるアルミニウム組成からゼロに傾斜される、請求項14に記載のデバイス。
- 前記第1の部分は、前記第2の部分よりも厚い、請求項11に記載のデバイス。
- 位置の関数としてアルミニウム組成を表す線の傾きは、前記第1の部分よりも前記第2の部分に対して急である、請求項11に記載のデバイス。
- 前記第1の部分は、前記発光層により放射された光に対して実質的に透明であり、
前記第2の部分は、前記発光層により放射された光に対して実質的に吸収的である、請求項11に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/139,999 US8507929B2 (en) | 2008-06-16 | 2008-06-16 | Semiconductor light emitting device including graded region |
US12/139,999 | 2008-06-16 | ||
PCT/IB2009/052484 WO2010004454A1 (en) | 2008-06-16 | 2009-06-10 | Semiconductor light emitting device including graded region |
Publications (2)
Publication Number | Publication Date |
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JP2011524632A true JP2011524632A (ja) | 2011-09-01 |
JP5643751B2 JP5643751B2 (ja) | 2014-12-17 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011513108A Active JP5643751B2 (ja) | 2008-06-16 | 2009-06-10 | 傾斜領域を含む半導体発光デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US8507929B2 (ja) |
EP (1) | EP2289117B1 (ja) |
JP (1) | JP5643751B2 (ja) |
KR (2) | KR101722110B1 (ja) |
CN (2) | CN102067342A (ja) |
TW (1) | TWI487135B (ja) |
WO (1) | WO2010004454A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017049053A1 (en) * | 2015-09-17 | 2017-03-23 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2628183A4 (en) * | 2010-10-12 | 2014-04-02 | Alliance Sustainable Energy | III-V BAND WEAPONS IMPORTANT FOR OPTOELECTRONIC COMPONENTS OF HIGH EFFICIENCY |
JP5758257B2 (ja) * | 2011-09-30 | 2015-08-05 | シャープ株式会社 | 化合物半導体太陽電池製造用積層体、化合物半導体太陽電池およびその製造方法 |
KR101944409B1 (ko) * | 2012-06-08 | 2019-04-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
CN104412396B (zh) * | 2012-07-05 | 2021-11-09 | 亮锐控股有限公司 | 具有含氮和磷的发光层的发光二极管 |
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2008
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-
2009
- 2009-06-10 JP JP2011513108A patent/JP5643751B2/ja active Active
- 2009-06-10 KR KR1020117001079A patent/KR101722110B1/ko active IP Right Grant
- 2009-06-10 CN CN2009801226445A patent/CN102067342A/zh active Pending
- 2009-06-10 WO PCT/IB2009/052484 patent/WO2010004454A1/en active Application Filing
- 2009-06-10 KR KR1020177008303A patent/KR101870095B1/ko active IP Right Grant
- 2009-06-10 CN CN201510975027.7A patent/CN105355746B/zh active Active
- 2009-06-10 EP EP09786420.1A patent/EP2289117B1/en active Active
- 2009-06-12 TW TW098119810A patent/TWI487135B/zh active
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JPH0661525A (ja) * | 1992-08-07 | 1994-03-04 | Hitachi Ltd | 発光ダイオード |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017049053A1 (en) * | 2015-09-17 | 2017-03-23 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
US9680057B2 (en) | 2015-09-17 | 2017-06-13 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
US9806227B2 (en) | 2015-09-17 | 2017-10-31 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets |
US10211368B2 (en) | 2015-09-17 | 2019-02-19 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets |
US10211369B2 (en) | 2015-09-17 | 2019-02-19 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating two-dimensional hole gases |
US10700237B2 (en) | 2015-09-17 | 2020-06-30 | Crystal Is, Inc. | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets |
Also Published As
Publication number | Publication date |
---|---|
TW201017929A (en) | 2010-05-01 |
KR101870095B1 (ko) | 2018-06-22 |
KR101722110B1 (ko) | 2017-03-31 |
KR20170052602A (ko) | 2017-05-12 |
EP2289117A1 (en) | 2011-03-02 |
TWI487135B (zh) | 2015-06-01 |
US20090309111A1 (en) | 2009-12-17 |
WO2010004454A1 (en) | 2010-01-14 |
CN105355746A (zh) | 2016-02-24 |
US8507929B2 (en) | 2013-08-13 |
KR20110030595A (ko) | 2011-03-23 |
JP5643751B2 (ja) | 2014-12-17 |
EP2289117B1 (en) | 2018-08-08 |
CN102067342A (zh) | 2011-05-18 |
CN105355746B (zh) | 2021-05-11 |
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