JP2011523212A - 半導体波長変換器が接合された発光ダイオード - Google Patents

半導体波長変換器が接合された発光ダイオード Download PDF

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Publication number
JP2011523212A
JP2011523212A JP2011512493A JP2011512493A JP2011523212A JP 2011523212 A JP2011523212 A JP 2011523212A JP 2011512493 A JP2011512493 A JP 2011512493A JP 2011512493 A JP2011512493 A JP 2011512493A JP 2011523212 A JP2011523212 A JP 2011523212A
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wavelength
light
photoluminescent
region
photoluminescent element
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JP2011523212A5 (enExample
Inventor
エー． ハーセ，マイケル
ジェイ． ミラー，トーマス
ジェイ． オウダーカーク，アンドリュー
ダブリュ． ケリー，トミー
エー． レザーデイル，キャサリン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2011523212A publication Critical patent/JP2011523212A/ja
Publication of JP2011523212A5 publication Critical patent/JP2011523212A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
JP2011512493A 2008-06-05 2009-04-23 半導体波長変換器が接合された発光ダイオード Withdrawn JP2011523212A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5907308P 2008-06-05 2008-06-05
US61/059,073 2008-06-05
PCT/US2009/041521 WO2009148717A2 (en) 2008-06-05 2009-04-23 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

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JP2011523212A true JP2011523212A (ja) 2011-08-04
JP2011523212A5 JP2011523212A5 (enExample) 2012-06-14

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JP2011512493A Withdrawn JP2011523212A (ja) 2008-06-05 2009-04-23 半導体波長変換器が接合された発光ダイオード

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US (1) US20110186877A1 (enExample)
EP (1) EP2301087A2 (enExample)
JP (1) JP2011523212A (enExample)
KR (1) KR20110019390A (enExample)
CN (1) CN102057504A (enExample)
TW (1) TW201006013A (enExample)
WO (1) WO2009148717A2 (enExample)

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JP2016517537A (ja) * 2013-03-11 2016-06-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 調光可能な発光装置
JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

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JP2012526391A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
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WO2012042452A2 (en) 2010-09-29 2012-04-05 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
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CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
FR3076080B1 (fr) * 2017-12-27 2019-11-29 Aledia Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication
WO2020251078A1 (ko) * 2019-06-12 2020-12-17 서울바이오시스 주식회사 발광 적층체 및 이를 포함한 표시 장치
CN115172544A (zh) * 2022-06-22 2022-10-11 广东中民工业技术创新研究院有限公司 一种基于全氮化物的外延芯片结构和发光器件

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
JP2016517537A (ja) * 2013-03-11 2016-06-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 調光可能な発光装置
JP2017513225A (ja) * 2014-04-01 2017-05-25 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク 半導体画素、このような画素のマトリクス、このような画素を製造するための半導体構造、およびそれらの製作方法
JP2022543821A (ja) * 2019-08-06 2022-10-14 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法
JP7387871B2 (ja) 2019-08-06 2023-11-28 プレッシー・セミコンダクターズ・リミテッド Ｌｅｄアレイおよびｌｅｄアレイを形成する方法

Also Published As

Publication number Publication date
WO2009148717A3 (en) 2010-02-18
EP2301087A2 (en) 2011-03-30
WO2009148717A2 (en) 2009-12-10
KR20110019390A (ko) 2011-02-25
TW201006013A (en) 2010-02-01
US20110186877A1 (en) 2011-08-04
CN102057504A (zh) 2011-05-11

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