JP2011514678A5 - - Google Patents
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- Publication number
- JP2011514678A5 JP2011514678A5 JP2010549819A JP2010549819A JP2011514678A5 JP 2011514678 A5 JP2011514678 A5 JP 2011514678A5 JP 2010549819 A JP2010549819 A JP 2010549819A JP 2010549819 A JP2010549819 A JP 2010549819A JP 2011514678 A5 JP2011514678 A5 JP 2011514678A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- low
- radiation
- exposure
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 26
- 239000000758 substrate Substances 0.000 claims 17
- 238000004132 cross linking Methods 0.000 claims 14
- 238000010438 heat treatment Methods 0.000 claims 12
- 239000000203 mixture Substances 0.000 claims 11
- 239000000126 substance Substances 0.000 claims 9
- 238000005229 chemical vapour deposition Methods 0.000 claims 6
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 claims 4
- YHQGMYUVUMAZJR-UHFFFAOYSA-N p-Mentha-1,3-diene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 claims 4
- XMGQYMWWDOXHJM-UHFFFAOYSA-N (+-)-(RS)-limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 claims 2
- 101700044783 ALLTR Proteins 0.000 claims 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N Decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims 2
- JFNLZVQOOSMTJK-UHFFFAOYSA-N Norbornene Chemical compound C1C2CCC1C=C2 JFNLZVQOOSMTJK-UHFFFAOYSA-N 0.000 claims 2
- 238000010560 atom transfer radical polymerization reaction Methods 0.000 claims 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims 2
- 239000003999 initiator Substances 0.000 claims 2
- 235000001510 limonene Nutrition 0.000 claims 2
- 229940087305 limonene Drugs 0.000 claims 2
- 229930007650 limonene Natural products 0.000 claims 2
- 230000003287 optical Effects 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
- 150000003505 terpenes Chemical class 0.000 claims 2
- 235000007586 terpenes Nutrition 0.000 claims 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 2
- 210000002381 Plasma Anatomy 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 239000000356 contaminant Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000001629 suppression Effects 0.000 claims 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/043,835 US20090226694A1 (en) | 2008-03-06 | 2008-03-06 | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
| US12/043,814 US7977256B2 (en) | 2008-03-06 | 2008-03-06 | Method for removing a pore-generating material from an uncured low-k dielectric film |
| US12/043,814 | 2008-03-06 | ||
| US12/043,772 US7858533B2 (en) | 2008-03-06 | 2008-03-06 | Method for curing a porous low dielectric constant dielectric film |
| US12/043,772 | 2008-03-06 | ||
| US12/043,835 | 2008-03-06 | ||
| PCT/US2009/035878 WO2009111473A2 (en) | 2008-03-06 | 2009-03-03 | Method for curing a porous low dielectric constant dielectric film |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013173426A Division JP2014007416A (ja) | 2008-03-06 | 2013-08-23 | 有孔性低誘電率誘電膜の硬化方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011514678A JP2011514678A (ja) | 2011-05-06 |
| JP2011514678A5 true JP2011514678A5 (es) | 2012-04-19 |
| JP5490024B2 JP5490024B2 (ja) | 2014-05-14 |
Family
ID=41056604
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010549819A Expired - Fee Related JP5490024B2 (ja) | 2008-03-06 | 2009-03-03 | 有孔性低誘電率誘電膜の硬化方法 |
| JP2013173426A Pending JP2014007416A (ja) | 2008-03-06 | 2013-08-23 | 有孔性低誘電率誘電膜の硬化方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013173426A Pending JP2014007416A (ja) | 2008-03-06 | 2013-08-23 | 有孔性低誘電率誘電膜の硬化方法 |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JP5490024B2 (es) |
| KR (1) | KR101538531B1 (es) |
| CN (2) | CN102789975B (es) |
| DE (1) | DE112009000518T5 (es) |
| TW (1) | TWI421939B (es) |
| WO (1) | WO2009111473A2 (es) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110232677A1 (en) * | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
| JP2012104703A (ja) * | 2010-11-11 | 2012-05-31 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
| CN104143524A (zh) * | 2013-05-07 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
| US10109478B2 (en) * | 2016-09-09 | 2018-10-23 | Lam Research Corporation | Systems and methods for UV-based suppression of plasma instability |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| CN118315254A (zh) | 2019-01-22 | 2024-07-09 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596467B2 (en) * | 2000-09-13 | 2003-07-22 | Shipley Company, L.L.C. | Electronic device manufacture |
| US6692903B2 (en) * | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
| US6756085B2 (en) * | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
| US20030224544A1 (en) * | 2001-12-06 | 2003-12-04 | Shipley Company, L.L.C. | Test method |
| JP3726071B2 (ja) * | 2002-06-05 | 2005-12-14 | 東京エレクトロン株式会社 | 熱処理方法 |
| US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
| US7098149B2 (en) * | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| US6897162B2 (en) * | 2003-10-20 | 2005-05-24 | Wafermasters, Inc. | Integrated ashing and implant annealing method |
| US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
| US7622378B2 (en) * | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
| US20070173071A1 (en) * | 2006-01-20 | 2007-07-26 | International Business Machines Corporation | SiCOH dielectric |
| JP2007214156A (ja) * | 2006-02-07 | 2007-08-23 | Yatabe Hitoo | 半導体デバイス |
| JP2007324170A (ja) * | 2006-05-30 | 2007-12-13 | Yoshimi Shiotani | 照射装置及び照射装置を用いた半導体製造装置 |
-
2009
- 2009-03-03 KR KR1020107022355A patent/KR101538531B1/ko active IP Right Grant
- 2009-03-03 DE DE112009000518T patent/DE112009000518T5/de not_active Ceased
- 2009-03-03 CN CN201210246284.3A patent/CN102789975B/zh not_active Expired - Fee Related
- 2009-03-03 WO PCT/US2009/035878 patent/WO2009111473A2/en active Application Filing
- 2009-03-03 JP JP2010549819A patent/JP5490024B2/ja not_active Expired - Fee Related
- 2009-03-03 CN CN2009801078443A patent/CN101960556B/zh not_active Expired - Fee Related
- 2009-03-06 TW TW098107312A patent/TWI421939B/zh not_active IP Right Cessation
-
2013
- 2013-08-23 JP JP2013173426A patent/JP2014007416A/ja active Pending
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