JP2011514637A5 - - Google Patents
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- Publication number
- JP2011514637A5 JP2011514637A5 JP2010549699A JP2010549699A JP2011514637A5 JP 2011514637 A5 JP2011514637 A5 JP 2011514637A5 JP 2010549699 A JP2010549699 A JP 2010549699A JP 2010549699 A JP2010549699 A JP 2010549699A JP 2011514637 A5 JP2011514637 A5 JP 2011514637A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive material
- electrically conductive
- ion beam
- electron
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims 27
- 238000010884 ion-beam technique Methods 0.000 claims 25
- 238000010894 electron beam technology Methods 0.000 claims 22
- 239000011248 coating agent Substances 0.000 claims 19
- 238000000576 coating method Methods 0.000 claims 19
- 239000000463 material Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000013638 trimer Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3320808P | 2008-03-03 | 2008-03-03 | |
| PCT/US2009/034000 WO2009111149A1 (en) | 2008-03-03 | 2009-02-13 | Gas field ion source with coated tip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011514637A JP2011514637A (ja) | 2011-05-06 |
| JP2011514637A5 true JP2011514637A5 (https=) | 2012-03-22 |
Family
ID=40679392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010549699A Pending JP2011514637A (ja) | 2008-03-03 | 2009-02-13 | コーティングされた先端部を有するガス電界電離イオン源 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8314403B2 (https=) |
| EP (1) | EP2263248B1 (https=) |
| JP (1) | JP2011514637A (https=) |
| TW (1) | TWI474362B (https=) |
| WO (1) | WO2009111149A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008049654B4 (de) | 2008-09-30 | 2024-08-01 | Carl Zeiss Microscopy Gmbh | Elektronenstrahlquelle, Elektronenstrahlsystem mit derselben, Verfahren zur Herstellung der Elektronenstrahlquelle sowie deren Verwendung |
| US8536773B2 (en) | 2011-03-30 | 2013-09-17 | Carl Zeiss Microscopy Gmbh | Electron beam source and method of manufacturing the same |
| RU2693560C2 (ru) * | 2013-06-21 | 2019-07-03 | Смитс Детекшен Монреаль Инк. | Способ и устройство для покрытого оболочкой источника ионизации коронного разряда |
| JP6560871B2 (ja) * | 2015-02-03 | 2019-08-14 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置 |
| DE102020112220B9 (de) * | 2020-05-06 | 2022-05-25 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät zum Abtragen mindestens eines Materials von einer Materialeinheit und Anordnen des Materials an einem Objekt |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1122085A (en) | 1913-10-08 | 1914-12-22 | J H Willoughby | Compressor. |
| DE2333866A1 (de) | 1973-07-03 | 1975-01-23 | Max Planck Gesellschaft | Felddesorptions-ionenquelle und verfahren zu ihrer herstellung |
| US4085330A (en) * | 1976-07-08 | 1978-04-18 | Burroughs Corporation | Focused ion beam mask maker |
| JPS5878557U (ja) * | 1981-11-24 | 1983-05-27 | 株式会社日立製作所 | 電界放出型イオン源 |
| JPS5968142A (ja) * | 1982-10-08 | 1984-04-18 | Fujitsu Ltd | 電界電離ガスイオン源用エミツタチツプ |
| JPS60133628A (ja) * | 1983-12-21 | 1985-07-16 | Fujitsu Ltd | 電界電離型イオン源用チツプの製造方法 |
| US4686414A (en) * | 1984-11-20 | 1987-08-11 | Hughes Aircraft Company | Enhanced wetting of liquid metal alloy ion sources |
| JPH0746585B2 (ja) * | 1985-05-24 | 1995-05-17 | 株式会社日立製作所 | イオンビーム装置およびイオンビーム形成方法 |
| JPH02123638A (ja) * | 1988-11-01 | 1990-05-11 | Jeol Ltd | 軽元素イオン源 |
| WO2001015192A1 (en) * | 1999-08-20 | 2001-03-01 | Fei Company | Schottky emitter having extended life |
| GB2374979A (en) * | 2000-12-28 | 2002-10-30 | Ims Ionen Mikrofab Syst | A field ionisation source |
| GB2372146B (en) * | 2001-02-09 | 2003-03-26 | Leica Microsys Lithography Ltd | Cathode |
| US20070228287A1 (en) * | 2006-03-20 | 2007-10-04 | Alis Technology Corporation | Systems and methods for a gas field ionization source |
| US7511279B2 (en) | 2003-10-16 | 2009-03-31 | Alis Corporation | Ion sources, systems and methods |
| US7176610B2 (en) * | 2004-02-10 | 2007-02-13 | Toshiba Machine America, Inc. | High brightness thermionic cathode |
| JP4543129B2 (ja) * | 2004-11-04 | 2010-09-15 | 学校法人早稲田大学 | 電子光学装置用電子ビーム源及びその製造方法 |
| GB2424754A (en) * | 2005-03-29 | 2006-10-04 | Univ Basel | A focused ion beam generator |
| US7939800B2 (en) * | 2005-10-19 | 2011-05-10 | ICT, Integrated Circuit Testing, Gesellschaft fur Halbleiterpruftechnik mbH | Arrangement and method for compensating emitter tip vibrations |
| EP1947674B1 (en) | 2005-11-08 | 2015-06-17 | Advantest Corporation | Electron gun, electron beam exposure system and exposure method |
| WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
| TWI309428B (en) * | 2006-04-07 | 2009-05-01 | Hon Hai Prec Ind Co Ltd | Emission source having carbon nanotube |
| JP4778939B2 (ja) * | 2007-08-31 | 2011-09-21 | 株式会社神戸製鋼所 | イオン源の製造方法、及びこの方法によって製造されたイオン源 |
-
2009
- 2009-02-13 JP JP2010549699A patent/JP2011514637A/ja active Pending
- 2009-02-13 EP EP09716494.1A patent/EP2263248B1/en not_active Not-in-force
- 2009-02-13 WO PCT/US2009/034000 patent/WO2009111149A1/en not_active Ceased
- 2009-02-24 TW TW98105872A patent/TWI474362B/zh not_active IP Right Cessation
-
2010
- 2010-08-26 US US12/869,029 patent/US8314403B2/en not_active Expired - Fee Related
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