JP2011514010A - 誘電体膜の処理方法 - Google Patents
誘電体膜の処理方法 Download PDFInfo
- Publication number
- JP2011514010A JP2011514010A JP2010550730A JP2010550730A JP2011514010A JP 2011514010 A JP2011514010 A JP 2011514010A JP 2010550730 A JP2010550730 A JP 2010550730A JP 2010550730 A JP2010550730 A JP 2010550730A JP 2011514010 A JP2011514010 A JP 2011514010A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- supply
- cleaning
- chemical
- low dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 230
- 239000000126 substance Substances 0.000 claims abstract description 108
- 239000000356 contaminant Substances 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 100
- 239000013043 chemical agent Substances 0.000 claims abstract description 86
- 238000004140 cleaning Methods 0.000 claims abstract description 70
- 230000008569 process Effects 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000007788 liquid Substances 0.000 claims abstract description 48
- 239000002245 particle Substances 0.000 claims abstract description 38
- 229920000642 polymer Polymers 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 32
- 239000007787 solid Substances 0.000 claims abstract description 24
- 239000000839 emulsion Substances 0.000 claims abstract description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 26
- 230000005499 meniscus Effects 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 22
- 230000008439 repair process Effects 0.000 claims description 20
- 230000006870 function Effects 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 230000003993 interaction Effects 0.000 claims description 7
- 239000012459 cleaning agent Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 239000012454 non-polar solvent Substances 0.000 claims description 4
- 239000002798 polar solvent Substances 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910021654 trace metal Inorganic materials 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 33
- 239000010408 film Substances 0.000 description 76
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- 239000010409 thin film Substances 0.000 description 14
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000005051 trimethylchlorosilane Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DJLLJBLGCMFLSC-UHFFFAOYSA-N [dimethyl-(silylamino)silyl]methane Chemical compound C[Si](C)(C)N[SiH3] DJLLJBLGCMFLSC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/048,188 US9236279B2 (en) | 2003-06-27 | 2008-03-13 | Method of dielectric film treatment |
| PCT/US2009/035030 WO2009151656A2 (fr) | 2008-03-13 | 2009-02-24 | Procédé de traitement d'un film diélectrique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2011514010A true JP2011514010A (ja) | 2011-04-28 |
Family
ID=41061646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010550730A Pending JP2011514010A (ja) | 2008-03-13 | 2009-02-24 | 誘電体膜の処理方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9236279B2 (fr) |
| EP (1) | EP2272086A4 (fr) |
| JP (1) | JP2011514010A (fr) |
| KR (1) | KR20100132000A (fr) |
| CN (2) | CN102800611A (fr) |
| SG (1) | SG188880A1 (fr) |
| TW (1) | TWI405252B (fr) |
| WO (1) | WO2009151656A2 (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100015731A1 (en) * | 2007-02-20 | 2010-01-21 | Lam Research Corporation | Method of low-k dielectric film repair |
| US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
| US9338871B2 (en) | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
| US8617993B2 (en) * | 2010-02-01 | 2013-12-31 | Lam Research Corporation | Method of reducing pattern collapse in high aspect ratio nanostructures |
| EP2460860A1 (fr) * | 2010-12-02 | 2012-06-06 | Basf Se | Utilisation de mélanges pour supprimer des polyuréthanes de surfaces métalliques |
| CN102623327B (zh) * | 2011-01-31 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种化学机械研磨方法 |
| US8741775B2 (en) * | 2011-07-20 | 2014-06-03 | Applied Materials, Inc. | Method of patterning a low-K dielectric film |
| US10274270B2 (en) | 2011-10-27 | 2019-04-30 | Applied Materials, Inc. | Dual zone common catch heat exchanger/chiller |
| CN105296921A (zh) | 2012-01-12 | 2016-02-03 | 大日本印刷株式会社 | 拼版蒸镀掩模 |
| KR102201790B1 (ko) | 2012-01-12 | 2021-01-11 | 다이니폰 인사츠 가부시키가이샤 | 수지층이 형성된 금속 마스크의 제조 방법 |
| TWI498434B (zh) | 2012-01-12 | 2015-09-01 | Dainippon Printing Co Ltd | A method of manufacturing a vapor deposition mask, a method for producing a vapor deposition mask, and a method of manufacturing the organic semiconductor device |
| US8951950B2 (en) * | 2012-03-12 | 2015-02-10 | Ekc Technology | Aluminum post-etch residue removal with simultaneous surface passivation |
| US9165783B2 (en) | 2012-11-01 | 2015-10-20 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
| US8603913B1 (en) * | 2012-12-20 | 2013-12-10 | Lam Research Corporation | Porous dielectrics K value restoration by thermal treatment and or solvent treatment |
| US10181443B2 (en) * | 2013-02-04 | 2019-01-15 | Taiwan Semiconductor Manufacturing Company Limited | Support structure for barrier layer of semiconductor device |
| US9627608B2 (en) | 2014-09-11 | 2017-04-18 | Lam Research Corporation | Dielectric repair for emerging memory devices |
| KR20180030280A (ko) | 2016-09-12 | 2018-03-22 | 삼성전자주식회사 | 배선 구조체를 갖는 반도체 소자 |
| WO2018152494A1 (fr) | 2017-02-17 | 2018-08-23 | Nutech Ventures | Passivation de défauts dans des matériaux de pérovskite pour un rendement et une stabilité améliorés de cellules solaires |
| US11721541B2 (en) | 2021-03-03 | 2023-08-08 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement formation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004094203A (ja) * | 2002-07-12 | 2004-03-25 | Renesas Technology Corp | レジスト除去用洗浄液および半導体装置の製造方法 |
| JP2007184599A (ja) * | 2005-12-30 | 2007-07-19 | Lam Res Corp | 基板洗浄方法および洗浄溶液 |
| JP2008010610A (ja) * | 2006-06-29 | 2008-01-17 | Sony Corp | 半導体装置の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6152148A (en) | 1998-09-03 | 2000-11-28 | Honeywell, Inc. | Method for cleaning semiconductor wafers containing dielectric films |
| JP2001053044A (ja) | 1999-08-05 | 2001-02-23 | Yamaha Corp | 基板洗浄方法と基板洗浄装置 |
| US6423200B1 (en) * | 1999-09-30 | 2002-07-23 | Lam Research Corporation | Copper interconnect seed layer treatment methods and apparatuses for treating the same |
| US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
| US6951823B2 (en) * | 2001-05-14 | 2005-10-04 | Axcelis Technologies, Inc. | Plasma ashing process |
| US7029567B2 (en) * | 2001-12-21 | 2006-04-18 | Asm Nutool, Inc. | Electrochemical edge and bevel cleaning process and system |
| US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
| JP2004073919A (ja) | 2002-08-12 | 2004-03-11 | Ici Kenkyusho:Kk | 基体洗浄方法及び洗浄装置 |
| US8277675B2 (en) | 2002-09-30 | 2012-10-02 | Lam Research Corporation | Method of damaged low-k dielectric film layer removal |
| US7005390B2 (en) * | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
| US7700532B2 (en) * | 2002-11-08 | 2010-04-20 | Wako Pure Chemical Industries, Ltd. | Cleaning composition and method of cleaning therewith |
| US7696141B2 (en) * | 2003-06-27 | 2010-04-13 | Lam Research Corporation | Cleaning compound and method and system for using the cleaning compound |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| US9157151B2 (en) | 2006-06-05 | 2015-10-13 | Applied Materials, Inc. | Elimination of first wafer effect for PECVD films |
-
2008
- 2008-03-13 US US12/048,188 patent/US9236279B2/en not_active Expired - Fee Related
-
2009
- 2009-02-24 SG SG2013017629A patent/SG188880A1/en unknown
- 2009-02-24 WO PCT/US2009/035030 patent/WO2009151656A2/fr active Application Filing
- 2009-02-24 EP EP09762952.1A patent/EP2272086A4/fr not_active Withdrawn
- 2009-02-24 KR KR1020107020346A patent/KR20100132000A/ko not_active Application Discontinuation
- 2009-02-24 CN CN2012102016217A patent/CN102800611A/zh active Pending
- 2009-02-24 CN CN2009801093759A patent/CN101971297B/zh not_active Expired - Fee Related
- 2009-02-24 JP JP2010550730A patent/JP2011514010A/ja active Pending
- 2009-03-13 TW TW098108248A patent/TWI405252B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004094203A (ja) * | 2002-07-12 | 2004-03-25 | Renesas Technology Corp | レジスト除去用洗浄液および半導体装置の製造方法 |
| JP2007184599A (ja) * | 2005-12-30 | 2007-07-19 | Lam Res Corp | 基板洗浄方法および洗浄溶液 |
| JP2008010610A (ja) * | 2006-06-29 | 2008-01-17 | Sony Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009151656A3 (fr) | 2010-03-04 |
| US9236279B2 (en) | 2016-01-12 |
| EP2272086A2 (fr) | 2011-01-12 |
| WO2009151656A2 (fr) | 2009-12-17 |
| SG188880A1 (en) | 2013-04-30 |
| US20090229638A1 (en) | 2009-09-17 |
| CN102800611A (zh) | 2012-11-28 |
| US20140048108A9 (en) | 2014-02-20 |
| KR20100132000A (ko) | 2010-12-16 |
| TWI405252B (zh) | 2013-08-11 |
| EP2272086A4 (fr) | 2013-10-16 |
| CN101971297A (zh) | 2011-02-09 |
| TW200947540A (en) | 2009-11-16 |
| CN101971297B (zh) | 2013-04-17 |
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