JP2011510511A5 - - Google Patents
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- Publication number
- JP2011510511A5 JP2011510511A5 JP2010543598A JP2010543598A JP2011510511A5 JP 2011510511 A5 JP2011510511 A5 JP 2011510511A5 JP 2010543598 A JP2010543598 A JP 2010543598A JP 2010543598 A JP2010543598 A JP 2010543598A JP 2011510511 A5 JP2011510511 A5 JP 2011510511A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- junction region
- emitting device
- light emitting
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 4
- 230000015556 catabolic process Effects 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 230000000694 effects Effects 0.000 claims 2
- 230000007704 transition Effects 0.000 claims 2
- 239000000969 carrier Substances 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ZA2008/00593 | 2008-01-21 | ||
| ZA200800593 | 2008-01-21 | ||
| PCT/IB2009/050209 WO2009093177A1 (en) | 2008-01-21 | 2009-01-21 | Semiconductor light emitting device utilising punch-through effects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011510511A JP2011510511A (ja) | 2011-03-31 |
| JP2011510511A5 true JP2011510511A5 (https=) | 2011-05-12 |
| JP5676273B2 JP5676273B2 (ja) | 2015-02-25 |
Family
ID=40586889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010543598A Expired - Fee Related JP5676273B2 (ja) | 2008-01-21 | 2009-01-21 | パンチスルー効果を利用した半導体発光デバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8759845B2 (https=) |
| EP (1) | EP2245676A1 (https=) |
| JP (1) | JP5676273B2 (https=) |
| WO (1) | WO2009093177A1 (https=) |
| ZA (1) | ZA201004753B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5550558B2 (ja) * | 2007-11-01 | 2014-07-16 | インシアヴァ （ピーテーワイ） リミテッド | 光誘導機構を有するオプトエレクトロニック・デバイスおよびその機構を形成する方法 |
| US8759845B2 (en) | 2008-01-21 | 2014-06-24 | Insiava (Pty) Limited | Semiconductor light emitting device utilising punch-through effects |
| US8674382B2 (en) * | 2008-02-01 | 2014-03-18 | Insiava (Pty) Limited | Semiconductor light emitting device comprising heterojunction |
| CN102292834A (zh) | 2008-12-15 | 2011-12-21 | 因西亚瓦(控股)有限公司 | 利用穿通效应的硅发光器件 |
| EP2526571B1 (en) | 2010-01-22 | 2019-05-01 | Insiava (Pty) Limited | Silicon light emitting device and method of fabricating same |
| JP5665504B2 (ja) * | 2010-11-24 | 2015-02-04 | キヤノン株式会社 | 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ |
| EP2756527B1 (en) | 2011-09-16 | 2015-11-18 | Insiava (Pty) Limited | Near infrared light source in bulk silicon |
| US20210280736A1 (en) * | 2016-09-06 | 2021-09-09 | University Of South Africa | OPTIMISED 650 nm SILICON AVALANCHE LED |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167390A (ja) | 1984-02-09 | 1985-08-30 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
| JPS63181486A (ja) | 1987-01-23 | 1988-07-26 | Hiroshima Univ | 半導体発光装置 |
| US5136353A (en) * | 1990-05-10 | 1992-08-04 | The University Of Colorado Foundation, Inc. | Optical switch |
| US5510627A (en) * | 1994-06-29 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Infrared-to-visible converter |
| US5994720A (en) | 1996-03-04 | 1999-11-30 | University Of Pretoria | Indirect bandgap semiconductor optoelectronic device |
| US6111271A (en) * | 1996-03-28 | 2000-08-29 | University Of Pretoria | Optoelectronic device with separately controllable carrier injection means |
| JP4024431B2 (ja) | 1999-07-23 | 2007-12-19 | 株式会社東芝 | 双方向半導体発光素子及び光伝送装置 |
| JP2002246639A (ja) * | 2001-02-20 | 2002-08-30 | Fujitsu Ltd | 半導体発光装置 |
| WO2005020287A2 (en) | 2003-08-22 | 2005-03-03 | The Board Of Trustees Of The University Of Illinois | Semiconductor device and method |
| WO2009047716A1 (en) | 2007-10-08 | 2009-04-16 | Insiava (Pty) Limited | Silicon light emitting device with carrier injection |
| JP5550558B2 (ja) | 2007-11-01 | 2014-07-16 | インシアヴァ （ピーテーワイ） リミテッド | 光誘導機構を有するオプトエレクトロニック・デバイスおよびその機構を形成する方法 |
| US8759845B2 (en) | 2008-01-21 | 2014-06-24 | Insiava (Pty) Limited | Semiconductor light emitting device utilising punch-through effects |
| US8674382B2 (en) | 2008-02-01 | 2014-03-18 | Insiava (Pty) Limited | Semiconductor light emitting device comprising heterojunction |
| CN102292834A (zh) | 2008-12-15 | 2011-12-21 | 因西亚瓦(控股)有限公司 | 利用穿通效应的硅发光器件 |
| US8395226B2 (en) | 2009-01-27 | 2013-03-12 | Insiava (Pty) Limited | Microchip-based MOEMS and waveguide device |
| EP2526571B1 (en) | 2010-01-22 | 2019-05-01 | Insiava (Pty) Limited | Silicon light emitting device and method of fabricating same |
-
2009
- 2009-01-21 US US12/863,743 patent/US8759845B2/en not_active Expired - Fee Related
- 2009-01-21 EP EP09703175A patent/EP2245676A1/en not_active Ceased
- 2009-01-21 WO PCT/IB2009/050209 patent/WO2009093177A1/en not_active Ceased
- 2009-01-21 JP JP2010543598A patent/JP5676273B2/ja not_active Expired - Fee Related
-
2010
- 2010-07-06 ZA ZA2010/04753A patent/ZA201004753B/en unknown
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