JP2011510177A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011510177A5 JP2011510177A5 JP2010543475A JP2010543475A JP2011510177A5 JP 2011510177 A5 JP2011510177 A5 JP 2011510177A5 JP 2010543475 A JP2010543475 A JP 2010543475A JP 2010543475 A JP2010543475 A JP 2010543475A JP 2011510177 A5 JP2011510177 A5 JP 2011510177A5
- Authority
- JP
- Japan
- Prior art keywords
- solution
- metal surface
- reducing agent
- compound
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08150612 | 2008-01-24 | ||
| PCT/EP2009/050589 WO2009092706A2 (en) | 2008-01-24 | 2009-01-20 | Electroless deposition of barrier layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011510177A JP2011510177A (ja) | 2011-03-31 |
| JP2011510177A5 true JP2011510177A5 (https=) | 2012-03-08 |
Family
ID=40901477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010543475A Pending JP2011510177A (ja) | 2008-01-24 | 2009-01-20 | バリア層の無電解析出 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20110059611A1 (https=) |
| EP (1) | EP2255024A2 (https=) |
| JP (1) | JP2011510177A (https=) |
| KR (1) | KR20100102738A (https=) |
| CN (1) | CN101925691A (https=) |
| IL (1) | IL206719A (https=) |
| RU (1) | RU2492279C2 (https=) |
| TW (1) | TW200949010A (https=) |
| WO (1) | WO2009092706A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101751553B1 (ko) | 2009-06-30 | 2017-06-27 | 바스프 에스이 | 수성 알칼리 세정 조성물 및 그 사용 방법 |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| US8895441B2 (en) | 2012-02-24 | 2014-11-25 | Lam Research Corporation | Methods and materials for anchoring gapfill metals |
| US9551074B2 (en) * | 2014-06-05 | 2017-01-24 | Lam Research Corporation | Electroless plating solution with at least two borane containing reducing agents |
| EP3409815B1 (en) * | 2017-06-02 | 2020-08-05 | ATOTECH Deutschland GmbH | Electroless nickel alloy plating baths, a method for deposition of nickel alloys, nickel alloy deposits and uses of such formed nickel alloy deposits |
| WO2019145336A1 (en) * | 2018-01-25 | 2019-08-01 | Université de Mons | Nickel alloy plating |
| WO2020094642A1 (en) | 2018-11-06 | 2020-05-14 | Atotech Deutschland Gmbh | Electroless nickel plating solution |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002778A (en) * | 1973-08-15 | 1977-01-11 | E. I. Du Pont De Nemours And Company | Chemical plating process |
| US6645567B2 (en) * | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| US6605874B2 (en) * | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
| US6902605B2 (en) * | 2003-03-06 | 2005-06-07 | Blue29, Llc | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
| JP5074025B2 (ja) * | 2003-05-09 | 2012-11-14 | ビーエーエスエフ ソシエタス・ヨーロピア | 半導体工業に使用するための三成分系材料を無電解メッキする組成物 |
| US6924232B2 (en) * | 2003-08-27 | 2005-08-02 | Freescale Semiconductor, Inc. | Semiconductor process and composition for forming a barrier material overlying copper |
| US7531463B2 (en) * | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US7268074B2 (en) * | 2004-06-14 | 2007-09-11 | Enthone, Inc. | Capping of metal interconnects in integrated circuit electronic devices |
| US7332193B2 (en) * | 2004-10-18 | 2008-02-19 | Enthone, Inc. | Cobalt and nickel electroless plating in microelectronic devices |
| US7176133B2 (en) * | 2004-11-22 | 2007-02-13 | Freescale Semiconductor, Inc. | Controlled electroless plating |
| US7476616B2 (en) * | 2004-12-13 | 2009-01-13 | Fsi International, Inc. | Reagent activator for electroless plating |
| US20060188659A1 (en) * | 2005-02-23 | 2006-08-24 | Enthone Inc. | Cobalt self-initiated electroless via fill for stacked memory cells |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US7658790B1 (en) * | 2007-07-03 | 2010-02-09 | Intermolecular, Inc. | Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers |
-
2009
- 2009-01-20 US US12/863,114 patent/US20110059611A1/en not_active Abandoned
- 2009-01-20 EP EP09703297A patent/EP2255024A2/en not_active Withdrawn
- 2009-01-20 CN CN2009801029184A patent/CN101925691A/zh active Pending
- 2009-01-20 KR KR1020107018826A patent/KR20100102738A/ko not_active Ceased
- 2009-01-20 RU RU2010134880/02A patent/RU2492279C2/ru not_active IP Right Cessation
- 2009-01-20 WO PCT/EP2009/050589 patent/WO2009092706A2/en not_active Ceased
- 2009-01-20 JP JP2010543475A patent/JP2011510177A/ja active Pending
- 2009-01-22 TW TW098102624A patent/TW200949010A/zh unknown
-
2010
- 2010-06-30 IL IL206719A patent/IL206719A/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011510177A5 (https=) | ||
| TWI270416B (en) | Electroless plating solution and process | |
| KR101518519B1 (ko) | 코발트 합금의 무전해 증착 | |
| TW200907104A (en) | Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys | |
| JPH0883796A (ja) | 半導体装置の配線形成に用いる無電解めっき浴及び半導体装置の配線形成方法 | |
| WO2007147020A3 (en) | Cobalt precursors useful for forming cobalt-containing films on substrates | |
| JP2011509344A5 (https=) | ||
| RU2010134880A (ru) | Неэлектрическое осаждение барьерных слоев | |
| JP2011509344A (ja) | 誘電体層の無電解メッキ用活性化溶液 | |
| JP2017123466A (ja) | マイクロエレクトロニクスデバイスのためのワイヤボンディング可能な表面 | |
| JP2018532046A (ja) | 金を無電解めっきするためのめっき浴組成物、および金層を析出させる方法 | |
| TWI582266B (zh) | 用於鈷合金無電沈積之鹼性鍍浴 | |
| JP2013108170A (ja) | 無電解パラジウムめっき液 | |
| TW201538788A (zh) | 無電鍍覆用催化劑溶液 | |
| CN103556135B (zh) | 一种用于塑料表面金属化改性的解胶溶液 | |
| CN105593405A (zh) | 在阻障层上沉积铜晶种层的方法和铜电镀浴 | |
| CN105051254B (zh) | 供无电电镀的铜表面活化的方法 | |
| US10577692B2 (en) | Pretreatment of iron-based substrates for electroless plating | |
| RU2008111820A (ru) | Электролит для нанесения гальванических покрытий методом химического восстановления и способ получения элемента высокотемпературного устройства с применением такого электролита | |
| CN107104076B (zh) | 一种化学镀制备ULSI-Cu布线扩散阻挡层NiCoB薄膜的方法 | |
| CN116324032A (zh) | 在不用钯活化的情况下在铜上无电镀镍沉积的方法 | |
| JP2004339578A (ja) | コバルト系合金めっき液、めっき方法及びめっき物 | |
| JP2019532177A (ja) | 窒化ガリウム半導体の活性化されていない表面上へのパラジウムの直接的な堆積方法 | |
| CN106684035B (zh) | 一种抗铜扩散阻挡层薄膜及其制备方法 | |
| CN104716089A (zh) | 在金属层上进行无电金属沉积的方法及应用 |