JP2011502345A5 - - Google Patents
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- Publication number
- JP2011502345A5 JP2011502345A5 JP2010530139A JP2010530139A JP2011502345A5 JP 2011502345 A5 JP2011502345 A5 JP 2011502345A5 JP 2010530139 A JP2010530139 A JP 2010530139A JP 2010530139 A JP2010530139 A JP 2010530139A JP 2011502345 A5 JP2011502345 A5 JP 2011502345A5
- Authority
- JP
- Japan
- Prior art keywords
- structure according
- silver
- composition
- semiconductor device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000203 mixture Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98086107P | 2007-10-18 | 2007-10-18 | |
| PCT/US2008/080290 WO2009052364A1 (en) | 2007-10-18 | 2008-10-17 | Conductive compositions and processes for use in the manufacture of semiconductor devices: multiple busbars |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011502345A JP2011502345A (ja) | 2011-01-20 |
| JP2011502345A5 true JP2011502345A5 (enExample) | 2011-12-01 |
Family
ID=40297687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010530139A Withdrawn JP2011502345A (ja) | 2007-10-18 | 2008-10-17 | 伝導性組成物、および半導体デバイスの製造における使用方法：複数の母線 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090101210A1 (enExample) |
| EP (1) | EP2191481A1 (enExample) |
| JP (1) | JP2011502345A (enExample) |
| KR (1) | KR20100080610A (enExample) |
| CN (1) | CN101816048A (enExample) |
| TW (1) | TW200933654A (enExample) |
| WO (1) | WO2009052364A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7708831B2 (en) * | 2006-03-01 | 2010-05-04 | Mitsubishi Gas Chemical Company, Inc. | Process for producing ZnO single crystal according to method of liquid phase growth |
| US20110180139A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| US20110180138A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| US9390829B2 (en) * | 2010-01-25 | 2016-07-12 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| JP5569094B2 (ja) * | 2010-03-28 | 2014-08-13 | セントラル硝子株式会社 | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 |
| CN102456427A (zh) * | 2010-10-30 | 2012-05-16 | 比亚迪股份有限公司 | 一种导电浆料及其制备方法 |
| CN102103895B (zh) * | 2010-11-23 | 2012-02-29 | 湖南威能新材料科技有限公司 | 一种太阳能电池正面电极及栅线用银浆料及其制备方法和含该银浆料制备的太阳能电池 |
| US9224517B2 (en) | 2011-04-07 | 2015-12-29 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
| KR101217206B1 (ko) | 2011-04-22 | 2012-12-31 | 엔젯 주식회사 | 소수성 물질을 이용한 전면전극 형성 방법 및 태양전지의 전면전극 형성방법 |
| CN102842638B (zh) * | 2011-06-21 | 2015-04-15 | 新日光能源科技股份有限公司 | 太阳能电池及其制造方法 |
| ZA201208302B (en) * | 2011-11-09 | 2014-10-29 | Heraeus Precious Metals Gmbh | Thick film conductive composition and use thereof |
| DE102011056632A1 (de) * | 2011-12-19 | 2013-06-20 | Schott Solar Ag | Verfahren zum Ausbilden einer Frontseitenmetallisierung einer Solarzelle sowie Solarzelle |
| JP2013243279A (ja) | 2012-05-22 | 2013-12-05 | Namics Corp | 太陽電池の電極形成用導電性ペースト |
| EP2750141B1 (en) * | 2012-12-28 | 2018-02-07 | Heraeus Deutschland GmbH & Co. KG | An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in MWT solar cells |
| US20160204303A1 (en) * | 2013-08-21 | 2016-07-14 | Gtat Corporation | Using an active solder to couple a metallic article to a photovoltaic cell |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378408A (en) * | 1993-07-29 | 1995-01-03 | E. I. Du Pont De Nemours And Company | Lead-free thick film paste composition |
| GB0108887D0 (en) * | 2001-04-09 | 2001-05-30 | Du Pont | Conductor composition III |
| US20030178057A1 (en) * | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
| WO2005015573A1 (ja) * | 2003-08-08 | 2005-02-17 | Sumitomo Electric Industries, Ltd | 導電性ペースト |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7435361B2 (en) * | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
-
2008
- 2008-10-17 WO PCT/US2008/080290 patent/WO2009052364A1/en not_active Ceased
- 2008-10-17 KR KR1020107010742A patent/KR20100080610A/ko not_active Ceased
- 2008-10-17 JP JP2010530139A patent/JP2011502345A/ja not_active Withdrawn
- 2008-10-17 CN CN200880110514A patent/CN101816048A/zh active Pending
- 2008-10-17 EP EP08840280A patent/EP2191481A1/en not_active Withdrawn
- 2008-10-20 US US12/254,277 patent/US20090101210A1/en not_active Abandoned
- 2008-10-20 TW TW097140252A patent/TW200933654A/zh unknown
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