JP2011209694A5 - - Google Patents

Download PDF

Info

Publication number
JP2011209694A5
JP2011209694A5 JP2011022888A JP2011022888A JP2011209694A5 JP 2011209694 A5 JP2011209694 A5 JP 2011209694A5 JP 2011022888 A JP2011022888 A JP 2011022888A JP 2011022888 A JP2011022888 A JP 2011022888A JP 2011209694 A5 JP2011209694 A5 JP 2011209694A5
Authority
JP
Japan
Prior art keywords
hard mask
film
composition
catalyst
tone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011022888A
Other languages
English (en)
Japanese (ja)
Other versions
JP6144000B2 (ja
JP2011209694A (ja
Filing date
Publication date
Priority claimed from US12/749,893 external-priority patent/US8728710B2/en
Priority claimed from US12/754,402 external-priority patent/US20100255412A1/en
Priority claimed from US12/758,419 external-priority patent/US8911932B2/en
Application filed filed Critical
Publication of JP2011209694A publication Critical patent/JP2011209694A/ja
Publication of JP2011209694A5 publication Critical patent/JP2011209694A5/ja
Application granted granted Critical
Publication of JP6144000B2 publication Critical patent/JP6144000B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011022888A 2010-03-30 2011-02-04 マイクロフォトリソグラフィ用の多階調の感光性ハードマスク Expired - Fee Related JP6144000B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/749,893 US8728710B2 (en) 2009-03-31 2010-03-30 Photo-imageable hardmask with dual tones for microphotolithography
US12/749,893 2010-03-30
US12/754,402 US20100255412A1 (en) 2009-04-06 2010-04-05 Photo-imaging Hardmask with Negative Tone for Microphotolithography
US12/754,402 2010-04-05
US12/758,419 2010-04-12
US12/758,419 US8911932B2 (en) 2009-04-13 2010-04-12 Photo-imageable hardmask with positive tone for microphotolithography

Publications (3)

Publication Number Publication Date
JP2011209694A JP2011209694A (ja) 2011-10-20
JP2011209694A5 true JP2011209694A5 (enExample) 2016-04-07
JP6144000B2 JP6144000B2 (ja) 2017-06-07

Family

ID=44940767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011022888A Expired - Fee Related JP6144000B2 (ja) 2010-03-30 2011-02-04 マイクロフォトリソグラフィ用の多階調の感光性ハードマスク

Country Status (1)

Country Link
JP (1) JP6144000B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5494725B2 (ja) * 2011-09-21 2014-05-21 Jsr株式会社 レンズの形成方法、レンズおよびネガ型感光性組成物
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP7307005B2 (ja) * 2019-04-26 2023-07-11 信越化学工業株式会社 硬化触媒の拡散距離を測定する方法
US11574805B2 (en) * 2019-09-12 2023-02-07 Brewer Science, Inc. Selective liquiphobic surface modification of substrates
CN119786339B (zh) * 2025-03-13 2025-05-16 合肥晶合集成电路股份有限公司 半导体结构及其形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001288364A (ja) * 2000-04-05 2001-10-16 Jsr Corp 放射線硬化性組成物およびそれを用いた光導波路ならびに光導波路の製造方法
TWI300516B (enExample) * 2001-07-24 2008-09-01 Jsr Corp
JP2003185861A (ja) * 2001-12-17 2003-07-03 Jsr Corp 光導波路ならびに光導波路の製造方法
JP2003185859A (ja) * 2001-12-17 2003-07-03 Jsr Corp 光導波路形成用硬化性組成物、光導波路の形成方法、及び光導波路
JP4483518B2 (ja) * 2004-10-18 2010-06-16 Jsr株式会社 エッチングマスク組成物
JP2007316531A (ja) * 2006-05-29 2007-12-06 Sekisui Chem Co Ltd ネガ型感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機el素子、ゲート絶縁膜及び薄膜トランジスタ
JP2008015187A (ja) * 2006-07-05 2008-01-24 Sekisui Chem Co Ltd ポジ型感光性樹脂組成物、薄膜パターンの製造方法及び半導体素子
JP2010032996A (ja) * 2008-06-27 2010-02-12 Jgc Catalysts & Chemicals Ltd シリカ系塗膜のパターニング方法および該方法から得られるシリカ系塗膜

Similar Documents

Publication Publication Date Title
US8911932B2 (en) Photo-imageable hardmask with positive tone for microphotolithography
US8968989B2 (en) Assist layers for EUV lithography
US8257910B1 (en) Underlayers for EUV lithography
KR100754230B1 (ko) 방사선 민감성 공중합체, 이의 포토레지스트 조성물 및이의 심 자외선 이층 시스템
EP2486453B1 (en) Positive-working photoimageable bottom antireflective coating
WO2008082241A1 (en) Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer
US8728710B2 (en) Photo-imageable hardmask with dual tones for microphotolithography
TW200842499A (en) Antireflective coating composition based on silicon polymer
CN101238414A (zh) 增透硬掩膜组合物和该组合物的使用方法
KR102017360B1 (ko) 아다만틸 기를 포함하는 비폴리머성 반사 방지 조성물
US20100255412A1 (en) Photo-imaging Hardmask with Negative Tone for Microphotolithography
TW200925784A (en) Composition for resist lower layer film formation for lithography and process for producing semiconductor device
TWI553416B (zh) 製造輻射敏感溶膠材料的方法
JP6144000B2 (ja) マイクロフォトリソグラフィ用の多階調の感光性ハードマスク
JP2011209694A5 (enExample)
US20050106494A1 (en) Silicon-containing resist systems with cyclic ketal protecting groups
JP4045430B2 (ja) パターン形成方法及びパターン形成材料
TWI866214B (zh) 半導體光阻組成物及使用所述組成物形成圖案的方法
KR20010026523A (ko) 유기 난반사 방지막용 조성물과 이의 제조방법
Sun Photo-imageable hardmask with dual tones for microphotolithography
CN102236253B (zh) 用于微光刻工艺的多相高硅光刻胶成像方法、多相高硅光刻胶及应用
KR100533361B1 (ko) 유기 난반사 방지막 중합체 및 그의 제조방법
US20040146809A1 (en) Composition for a bottom-layer resist
KR20240063600A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR101150532B1 (ko) 하드마스크용 조성물 및 이를 이용한 패턴 형성 방법