JP6144000B2 - マイクロフォトリソグラフィ用の多階調の感光性ハードマスク - Google Patents

マイクロフォトリソグラフィ用の多階調の感光性ハードマスク Download PDF

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Publication number
JP6144000B2
JP6144000B2 JP2011022888A JP2011022888A JP6144000B2 JP 6144000 B2 JP6144000 B2 JP 6144000B2 JP 2011022888 A JP2011022888 A JP 2011022888A JP 2011022888 A JP2011022888 A JP 2011022888A JP 6144000 B2 JP6144000 B2 JP 6144000B2
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Japan
Prior art keywords
hard mask
positive
film
tone
negative
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Expired - Fee Related
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JP2011022888A
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English (en)
Japanese (ja)
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JP2011209694A5 (enExample
JP2011209694A (ja
Inventor
シュンユン スン サム
シュンユン スン サム
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Sam Xunyun Sun
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Sam Xunyun Sun
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Priority claimed from US12/749,893 external-priority patent/US8728710B2/en
Priority claimed from US12/754,402 external-priority patent/US20100255412A1/en
Priority claimed from US12/758,419 external-priority patent/US8911932B2/en
Application filed by Sam Xunyun Sun filed Critical Sam Xunyun Sun
Publication of JP2011209694A publication Critical patent/JP2011209694A/ja
Publication of JP2011209694A5 publication Critical patent/JP2011209694A5/ja
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Publication of JP6144000B2 publication Critical patent/JP6144000B2/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011022888A 2010-03-30 2011-02-04 マイクロフォトリソグラフィ用の多階調の感光性ハードマスク Expired - Fee Related JP6144000B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/749,893 US8728710B2 (en) 2009-03-31 2010-03-30 Photo-imageable hardmask with dual tones for microphotolithography
US12/749,893 2010-03-30
US12/754,402 US20100255412A1 (en) 2009-04-06 2010-04-05 Photo-imaging Hardmask with Negative Tone for Microphotolithography
US12/754,402 2010-04-05
US12/758,419 2010-04-12
US12/758,419 US8911932B2 (en) 2009-04-13 2010-04-12 Photo-imageable hardmask with positive tone for microphotolithography

Publications (3)

Publication Number Publication Date
JP2011209694A JP2011209694A (ja) 2011-10-20
JP2011209694A5 JP2011209694A5 (enExample) 2016-04-07
JP6144000B2 true JP6144000B2 (ja) 2017-06-07

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JP2011022888A Expired - Fee Related JP6144000B2 (ja) 2010-03-30 2011-02-04 マイクロフォトリソグラフィ用の多階調の感光性ハードマスク

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5494725B2 (ja) * 2011-09-21 2014-05-21 Ｊｓｒ株式会社 レンズの形成方法、レンズおよびネガ型感光性組成物
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP7307005B2 (ja) * 2019-04-26 2023-07-11 信越化学工業株式会社 硬化触媒の拡散距離を測定する方法
US11574805B2 (en) * 2019-09-12 2023-02-07 Brewer Science, Inc. Selective liquiphobic surface modification of substrates
CN119786339B (zh) * 2025-03-13 2025-05-16 合肥晶合集成电路股份有限公司 半导体结构及其形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001288364A (ja) * 2000-04-05 2001-10-16 Jsr Corp 放射線硬化性組成物およびそれを用いた光導波路ならびに光導波路の製造方法
TWI300516B (enExample) * 2001-07-24 2008-09-01 Jsr Corp
JP2003185861A (ja) * 2001-12-17 2003-07-03 Jsr Corp 光導波路ならびに光導波路の製造方法
JP2003185859A (ja) * 2001-12-17 2003-07-03 Jsr Corp 光導波路形成用硬化性組成物、光導波路の形成方法、及び光導波路
JP4483518B2 (ja) * 2004-10-18 2010-06-16 Ｊｓｒ株式会社 エッチングマスク組成物
JP2007316531A (ja) * 2006-05-29 2007-12-06 Sekisui Chem Co Ltd ネガ型感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
JP2008015187A (ja) * 2006-07-05 2008-01-24 Sekisui Chem Co Ltd ポジ型感光性樹脂組成物、薄膜パターンの製造方法及び半導体素子
JP2010032996A (ja) * 2008-06-27 2010-02-12 Jgc Catalysts & Chemicals Ltd シリカ系塗膜のパターニング方法および該方法から得られるシリカ系塗膜

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