JP2011176163A5 - - Google Patents

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Publication number
JP2011176163A5
JP2011176163A5 JP2010039685A JP2010039685A JP2011176163A5 JP 2011176163 A5 JP2011176163 A5 JP 2011176163A5 JP 2010039685 A JP2010039685 A JP 2010039685A JP 2010039685 A JP2010039685 A JP 2010039685A JP 2011176163 A5 JP2011176163 A5 JP 2011176163A5
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JP
Japan
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
well
impurity layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010039685A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011176163A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010039685A priority Critical patent/JP2011176163A/ja
Priority claimed from JP2010039685A external-priority patent/JP2011176163A/ja
Priority to PCT/JP2010/005107 priority patent/WO2011104773A1/ja
Publication of JP2011176163A publication Critical patent/JP2011176163A/ja
Priority to US13/553,497 priority patent/US8928056B2/en
Publication of JP2011176163A5 publication Critical patent/JP2011176163A5/ja
Pending legal-status Critical Current

Links

JP2010039685A 2010-02-25 2010-02-25 不揮発性半導体記憶装置 Pending JP2011176163A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010039685A JP2011176163A (ja) 2010-02-25 2010-02-25 不揮発性半導体記憶装置
PCT/JP2010/005107 WO2011104773A1 (ja) 2010-02-25 2010-08-18 不揮発性半導体記憶装置
US13/553,497 US8928056B2 (en) 2010-02-25 2012-07-19 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010039685A JP2011176163A (ja) 2010-02-25 2010-02-25 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2011176163A JP2011176163A (ja) 2011-09-08
JP2011176163A5 true JP2011176163A5 (enExample) 2012-08-30

Family

ID=44506222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010039685A Pending JP2011176163A (ja) 2010-02-25 2010-02-25 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (1) US8928056B2 (enExample)
JP (1) JP2011176163A (enExample)
WO (1) WO2011104773A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544122B (zh) * 2012-02-21 2013-12-18 无锡来燕微电子有限公司 一种具有p+单一多晶架构的非挥发性记忆体及其制备方法
CN103022045A (zh) * 2012-12-28 2013-04-03 无锡来燕微电子有限公司 一种具有p+且pmos晶体管没有轻掺杂区域的单一多晶架构的非挥发性记忆体及其制备方法
US9553011B2 (en) 2012-12-28 2017-01-24 Texas Instruments Incorporated Deep trench isolation with tank contact grounding
US10056503B2 (en) 2016-10-25 2018-08-21 International Business Machines Corporation MIS capacitor for finned semiconductor structure
US10446567B2 (en) * 2017-03-31 2019-10-15 Asahi Kasei Microdevices Corporation Nonvolatile storage element and reference voltage generation circuit
JP6954854B2 (ja) * 2017-03-31 2021-10-27 旭化成エレクトロニクス株式会社 不揮発性記憶素子および基準電圧生成回路
CN111640747B (zh) * 2019-09-27 2025-09-12 福建省晋华集成电路有限公司 半导体器件及其电接触结构与制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59158546A (ja) * 1983-02-28 1984-09-08 Mitsubishi Electric Corp 相補形ｍｏｓ集積回路装置
JPH01251751A (ja) * 1988-03-31 1989-10-06 Seiko Epson Corp 半導体装置
JPH04155862A (ja) * 1990-10-18 1992-05-28 Hitachi Ltd 半導体集積回路装置
JP2596695B2 (ja) * 1993-05-07 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレイション Ｅｅｐｒｏｍ
US5844300A (en) * 1996-09-19 1998-12-01 Intel Corporation Single poly devices for monitoring the level and polarity of process induced charging in a MOS process
JP3221369B2 (ja) 1997-09-19 2001-10-22 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
JP2002033397A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
US6621128B2 (en) * 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
KR100660901B1 (ko) * 2005-12-22 2006-12-26 삼성전자주식회사 단일 게이트 구조를 갖는 이이피롬, 상기 이이피롬의동작방법 및 상기 이이피롬의 제조방법
US7612397B2 (en) * 2006-11-10 2009-11-03 Sharp Kabushiki Kaisha Memory cell having first and second capacitors with electrodes acting as control gates for nonvolatile memory transistors
US7688627B2 (en) * 2007-04-24 2010-03-30 Intersil Americas Inc. Flash memory array of floating gate-based non-volatile memory cells
JP2009054909A (ja) * 2007-08-29 2009-03-12 Panasonic Corp 半導体装置、その製造方法及び駆動方法

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