JP2011139977A - Drawing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a drawing method in which pretreatment and posttreatment can be carried out with good productivity. <P>SOLUTION: The drawing method includes: a material supply step of transferring a semiconductor substrate 1 to a transit area 9c; a pretreatment step of transferring the semiconductor substrate 1 from the transit area 9c to a treatment space 9d, performing a pretreatment of irradiating the semiconductor substrate 1 with ultraviolet rays to improve the surface condition of the semiconductor substrate 1, and then transferring the semiconductor substrate back to the transit area 9c from the treatment space 9d; a material removal step of removing the semiconductor substrate 1 from the transit area 9c. The pretreatment step is performed in parallel with at least part of at least either of the material supply step or the material removal step. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a drawing method, and more particularly to a method for performing pre-processing or post-processing with high productivity.

  A method of forming a film by applying an ink jet method in which a functional liquid is discharged as droplets and solidifying the applied functional liquid is widely used. As the functional liquid, various kinds of liquid materials such as a liquid material having a function of coloring by including a dye or a pigment and a liquid material having a function of forming metal wiring by including metal particles are used.

  Patent Document 1 discloses a droplet discharge device that applies a functional liquid to a substrate using an inkjet method. The droplet discharge device includes a stage for moving the substrate and a carriage for moving the droplet discharge head. A nozzle for discharging droplets is formed in the droplet discharge head. The stage and the carriage move in a direction orthogonal to each other. Then, droplets are ejected when the droplet ejection head is located at a location opposite to the location where the functional liquid is applied. A predetermined pattern is drawn on the substrate by landing the functional liquid on the predetermined position.

JP 2004-283635 A

  Depending on the surface state of the workpiece, the landed droplets may spread. In order to control the extent of the spread, pretreatment such as irradiating the work surface with ultraviolet rays may be performed to modify the work surface. Even after drawing, post-treatment may be performed in which the landed droplets are dried or irradiated with light to solidify. In this way, a film is formed by performing the pre-processing, drawing, and post-processing steps.

  These processes are performed using different apparatuses, and a conveying device such as a robot removes workpieces from the pre-processing apparatus and the post-processing apparatus. When one workpiece is supplied to the pre-processing device or the post-processing device, these devices take in the workpiece and process it. And these processing apparatuses will be in a waiting state until the processed workpiece is removed and the workpiece before processing is supplied. Therefore, a drawing method that performs pre-processing and post-processing with high productivity has been desired.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

[Application Example 1]
The drawing method according to this application example is a drawing method for drawing by discharging droplets onto a workpiece, and a feeding process for moving the workpiece to a relay location, and moving the workpiece from the relay location to a processing location. , Pretreatment for irradiating the workpiece with ultraviolet rays to modify the surface state of the workpiece, a pretreatment step for moving the workpiece from the processing location to the relay location, and a material removal step for moving the workpiece from the relay location And at least a part of at least one of the material supply step and the material removal step and the pretreatment step are performed in parallel.

  According to this drawing method, after the surface state of the workpiece is modified, droplets are discharged onto the workpiece. Thereby, it is possible to adjust the spread of the droplets that have landed on the workpiece. The material supply process and the material removal process are performed while the workpiece is preprocessed in the pretreatment process. Thereby, the pre-processed work is removed from the relay place, and the unprocessed work is supplied to the relay place. Then, immediately after the pre-processing of the workpiece is completed in the pre-processing step, it is possible to start the pre-processing of another workpiece. In this method, the material removal process, the pretreatment process, and the material removal process are performed in a shorter time than when the material supply process, the pretreatment process, and the material removal process are performed sequentially. Therefore, it is possible to draw with high productivity.

[Application Example 2]
In the drawing method according to the application example described above, a plurality of mounting tables on which the workpiece is mounted and moved between the relay place and the processing place are used, and the mounting table located at the relay place in the material supply step The workpiece is fed to the pretreatment step, the mounting table on which the untreated workpiece is mounted is moved to the treatment place, the pretreatment is performed on the untreated workpiece, The mounting table on which the workpiece is mounted is moved to the relay place, and the workpiece is removed from the mounting table located at the relay place in the material removal step.

  According to this drawing method, a plurality of mounting tables are used, and the mounting tables move between the relay place and the processing place. Then, the material removal and the material supply of the workpiece are performed on the mounting table located at the relay place. The workpiece is pre-processed on the mounting table located at the processing place. Therefore, while the preprocessing is being performed on the workpiece located at the processing location in the preprocessing step, the workpiece can be removed and fed on the mounting table located at the relay location.

[Application Example 3]
In the drawing method according to the application example described above, the material supplying step includes a plurality of placement places on which the workpiece is placed, and the placement place moves between the relay place and the processing place. Then, the workpiece is fed to the previous placement location located at the relay location, and in the pretreatment step, the previous placement location on which the untreated workpiece is mounted is moved to the treatment location, and the untreated The pretreatment is performed on the workpiece, the placement place on which the treated workpiece is mounted is moved to the relay place, and the work is removed from the placement place located at the relay place in the material removal step. It is characterized by doing.

  According to this drawing method, the mounting table includes a plurality of mounting locations, and the mounting locations move between the relay location and the processing location. Then, workpiece feeding and material removal are performed at the placement location located at the relay location. Pre-processing is performed on the workpiece at the mounting location located at the processing location. Therefore, while the pre-processing is being performed on the work positioned at the processing place in the pre-processing step, the work removal and feeding can be performed on the mounting table positioned at the relay place.

[Application Example 4]
The drawing method according to this application example is a drawing method for drawing by discharging droplets onto a workpiece, and a feeding process for moving the workpiece to a relay location, and moving the workpiece from the relay location to a processing location. A post-processing step of solidifying or hardening the droplets and moving from the processing location to the relay location; and a material removal step of moving the workpiece from the relay location; At least a part of at least one of the process and the material removal process and the post-processing process are performed in parallel.

  According to this drawing method, the droplets landed after the droplets are discharged onto the work are solidified or hardened. As a result, the droplets that have landed on the work can be fixed on the work. The material supply process and the material removal process are performed while post-processing the workpiece in the post-processing process. Thereby, the post-processed work is removed from the relay place, and the unprocessed work is supplied to the relay place. Then, after the post-processing of the work is completed in the post-processing step, it is possible to start the post-processing of another work. In this method, the material removal, the material supply, and the post-treatment are performed in a shorter time than the case where the material supply step, the post-treatment step, and the material removal step are sequentially performed independently. Therefore, it is possible to draw with high productivity.

[Application Example 5]
In the drawing method according to the application example described above, a plurality of mounting tables on which the workpiece is mounted and moved between the relay place and the processing place are used, and the mounting table located at the relay place in the material supply step In the post-processing step, the above-mentioned mounting table on which the unprocessed work is mounted is moved to the processing place, the post-processing is performed on the unprocessed work, and the processed The mounting table on which the workpiece is mounted is moved to the relay place, and the workpiece is removed from the mounting table located at the relay place in the material removal step.

  According to this drawing method, a plurality of mounting tables are used, and the mounting tables move between the relay place and the processing place. Then, workpiece feeding and material removal are performed on the mounting table located at the relay station. The workpiece is post-processed on the mounting table located at the processing place. Therefore, while post-processing is being performed on the workpiece located at the processing location in the post-processing step, the workpiece can be removed and fed on the mounting table located at the relay location.

[Application Example 6]
In the drawing method according to the application example described above, the material supplying step includes a plurality of placement places on which the workpiece is placed, and the placement place moves between the relay place and the processing place. Then, the workpiece is fed to the previous placement location located at the relay location, and in the post-processing step, the previous placement location on which the untreated workpiece is mounted is moved to the treatment location, and the untreated location The workpiece is subjected to the post-processing, the previous placement place on which the processed workpiece is mounted is moved to the relay place, and the work is removed from the previous placement place located at the relay place in the material removal step. It is characterized by doing.

  According to this drawing method, the mounting table includes a plurality of mounting locations, and the mounting locations move between the relay location and the processing location. Then, workpiece feeding and material removal are performed at the placement location located at the relay location. Post-processing is performed on the workpiece at the mounting location located at the processing location. Therefore, while post-processing is being performed on the workpiece located at the processing location in the post-processing step, the workpiece can be removed and fed on the mounting table located at the relay location.

[Application Example 7]
In the drawing method according to the application example, the droplet includes a curing agent that is cured by ultraviolet rays, and further includes a coating step of ejecting the droplet onto the workpiece and irradiating the landed droplet with ultraviolet rays. And

  According to this drawing method, the landed droplet can be cured by irradiating with ultraviolet rays. Accordingly, the discharged droplets can be cured in a short time.

FIG. 4A is a schematic plan view showing a semiconductor substrate, and FIG. 4B is a schematic plan view showing a droplet discharge device according to the first embodiment. (A) is a schematic front view which shows a supply part, (b) and (c) is a schematic side view which shows a supply part. The schematic perspective view which shows the structure of a pre-processing part. (A) is a schematic perspective view showing the configuration of the coating unit, (b) is a schematic side view showing a carriage, (c) is a schematic plan view showing a head unit, and (d) is a liquid droplet ejection head. The principal part schematic cross section for demonstrating a structure. The schematic perspective view which shows the structure of a post-processing part. (A) is a schematic front view which shows a storage part, (b) and (c) is a schematic side view which shows a storage part. The schematic perspective view which shows the structure of a conveyance part. The flowchart for showing the drawing method. The schematic diagram for demonstrating the drawing method. (A) is a schematic perspective view which shows the structure of a pre-processing part, (b) is a schematic perspective view which shows the structure of a post-processing part in connection with 2nd Embodiment.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. In addition, each member in each drawing is illustrated with a different scale for each member in order to make the size recognizable on each drawing.

(First embodiment)
In the present embodiment, a characteristic droplet discharge device of the present invention and an example of a drawing method for discharging and drawing a droplet using the droplet discharge device will be described with reference to FIGS.

(Semiconductor substrate)
First, a semiconductor substrate which is an example of an object to be drawn using a droplet discharge device will be described. FIG. 1A is a schematic plan view showing a semiconductor substrate. As shown in FIG. 1A, a semiconductor substrate 1 as a work includes a substrate 2. The substrate 2 only needs to have heat resistance so that the semiconductor device 3 can be mounted. As the substrate 2, a glass epoxy substrate, a paper phenol substrate, a paper epoxy substrate, or the like can be used.

  A semiconductor device 3 is mounted on the substrate 2. On the semiconductor device 3, marks such as a company name mark 4, a model code 5, and a production number 6 are drawn. These marks are drawn by the droplet discharge device.

(Droplet discharge device)
FIG. 1B is a schematic plan view showing a droplet discharge device. As shown in FIG. 1B, the droplet discharge device 7 mainly includes a supply unit 8, a pre-processing unit 9, a coating unit 10, a post-processing unit 11, a storage unit 12, a transport unit 13, and a control unit 14. ing. The droplet discharge device 7 is arranged in the order of the supply unit 8, the pre-processing unit 9, the coating unit 10, the post-processing unit 11, the storage unit 12, and the control unit 14 in the clockwise direction around the transport unit 13. A supply unit 8 is arranged next to the control unit 14. A direction in which the supply unit 8, the control unit 14, and the storage unit 12 are arranged is an X direction. The direction orthogonal to the X direction is defined as the Y direction, and the coating unit 10, the transport unit 13, and the control unit 14 are arranged side by side in the Y direction. The vertical direction is the Z direction.

  The supply unit 8 includes a storage container in which a plurality of semiconductor substrates 1 are stored. The supply unit 8 includes a relay location 8a, and supplies the semiconductor substrate 1 from the storage container to the relay location 8a. The pretreatment unit 9 has a function of modifying the surface of the semiconductor device 3. The pretreatment unit 9 adjusts the spread of the discharged droplets in the semiconductor device 3. The pre-processing unit 9 includes a first relay location 9a and a second relay location 9b, and takes the semiconductor substrate 1 before processing from the first relay location 9a or the second relay location 9b to modify the surface. Thereafter, the preprocessing unit 9 moves the processed semiconductor substrate 1 to the first relay location 9a or the second relay location 9b, and makes the semiconductor substrate 1 stand by. The first relay location 9a and the second relay location 9b are collectively referred to as a relay location 9c. A place where preprocessing is performed inside the preprocessing unit 9 is defined as a processing place 9d.

  The coating unit 10 has a function of drawing a droplet by discharging droplets onto the semiconductor device 3. The coating unit 10 includes a relay location 10a, and performs drawing by moving the semiconductor substrate 1 before drawing from the relay location 10a. Thereafter, the coating unit 10 moves the drawn semiconductor substrate 1 to the relay location 10a, and makes the semiconductor substrate 1 stand by.

  The post-processing unit 11 has a function of solidifying or curing the mark drawn on the semiconductor device 3. The post-processing unit 11 includes a third relay location 11a and a fourth relay location 11b. The semiconductor substrate 1 before processing is taken from the third relay location 11a or the fourth relay location 11b and solidified or cured. Thereafter, the post-processing unit 11 moves the processed semiconductor substrate 1 to the third relay location 11a or the fourth relay location 11b, and makes the semiconductor substrate 1 stand by. The third relay station 11a and the fourth relay station 11b are collectively referred to as a relay station 11c. A place where post-processing is performed inside the post-processing unit 11 is defined as a processing place 11d.

  The storage unit 12 includes a storage container that can store a plurality of semiconductor substrates 1. The storage unit 12 includes a relay location 12a, and stores the semiconductor substrate 1 from the relay location 12a into the storage container. The operator carries out the storage container storing the semiconductor substrate 1 from the droplet discharge device 7.

  A transport unit 13 is disposed at a central location of the droplet discharge device 7. The transport unit 13 is a scalar robot having two arms. A grip portion 13 a that grips the semiconductor substrate 1 is provided at the tip of the arm portion. The relay locations 8a, 9c, 10a, 11c, and 12a are located within the movement range 13b of the grip portion 13a. Accordingly, the gripping portion 13a can move the semiconductor substrate 1 between the relay locations 8a, 9c, 10a, 11c, and 12a. The control unit 14 is a device that controls the overall operation of the droplet discharge device 7 and manages the operation status of each unit of the droplet discharge device 7. Then, an instruction signal for moving the semiconductor substrate 1 is output to the transport unit 13. Thereby, the semiconductor substrate 1 is drawn by passing through each part sequentially.

(Supply section)
FIG. 2A is a schematic front view showing the supply unit, and FIGS. 2B and 2C are schematic side views showing the supply unit. As shown in FIGS. 2A and 2B, the supply unit 8 includes a base 15. An elevating device 16 is installed inside the base 15. The elevating device 16 includes a linear motion mechanism that operates in the Z direction. As this linear motion mechanism, a mechanism such as a combination of a ball screw and a rotary motor or a combination of a hydraulic cylinder and an oil pump can be used. In this embodiment, for example, a mechanism using a ball screw and a step motor is employed. An elevating plate 17 is connected to the elevating device 16 on the upper side of the base 15. The elevating plate 17 can be moved up and down by a predetermined moving amount by the elevating device 16.

  A rectangular parallelepiped storage container 18 is installed on the elevating plate 17, and a plurality of semiconductor substrates 1 are stored in the storage container 18. The storage container 18 has openings 18a on both sides in the Y direction, and the semiconductor substrate 1 can be taken in and out from the openings 18a. Convex rails 18c are formed inside the side surfaces 18b located on both sides in the X direction of the storage container 18, and the rails 18c are arranged extending in the Y direction. A plurality of rails 18c are arranged at equal intervals in the Z direction. By inserting the semiconductor substrate 1 along the rail 18c from the Y direction or from the -Y direction, the semiconductor substrate 1 is arranged and stored in the Z direction.

  On the Y direction side of the base 15, a substrate drawing portion 22 and a relay stand 23 are installed via a support member 21. A relay stand 23 is disposed on the substrate drawing portion 22 at a location on the Y direction side of the storage container 18. The substrate drawing portion 22 includes an arm portion 22a that expands and contracts in the Y direction and a linear motion mechanism that drives the arm portion 22a. This linear motion mechanism is not particularly limited as long as it is a mechanism that moves linearly. In this embodiment, for example, an air cylinder that operates with compressed air is employed. A claw portion 22b bent into a substantially rectangular shape is installed at one end of the arm portion 22a, and the tip of the claw portion 22b is formed in parallel with the arm portion 22a.

  The substrate pull-out portion 22 extends the arm portion 22 a, so that the arm portion 22 a penetrates the storage container 18. Then, the claw portion 22 b moves to the −Y direction side of the storage container 18. Next, after the elevating device 16 moves down the semiconductor substrate 1, the substrate drawing portion 22 contracts the arm portion 22a. At this time, the claw portion 22 b moves while pushing one end of the semiconductor substrate 1.

  As a result, as shown in FIG. 2C, the semiconductor substrate 1 is moved from the storage container 18 onto the relay stand 23. The relay base 23 is formed with a recess having a width substantially the same as the width of the semiconductor substrate 1 in the X direction, and the semiconductor substrate 1 moves along the recess. And the position of the X direction of the semiconductor substrate 1 is determined by this recessed part. The position of the semiconductor substrate 1 in the Y direction is determined by the location where the semiconductor substrate 1 is stopped by being pushed by the claw portion 22b. On the relay stand 23 is a relay place 8a, and the semiconductor substrate 1 stands by at a predetermined place of the relay place 8a. When the semiconductor substrate 1 is waiting at the relay location 8 a of the supply unit 8, the transport unit 13 moves the gripping unit 13 a to a location facing the semiconductor substrate 1 to grip and move the semiconductor substrate 1.

  After the semiconductor substrate 1 is moved from the relay table 23 by the transfer unit 13, the substrate drawing unit 22 extends the arm portion 22a. Next, the lifting device 16 lowers the storage container 18, and the substrate drawing portion 22 moves the semiconductor substrate 1 from the storage container 18 onto the relay stand 23. In this way, the supply unit 8 sequentially moves the semiconductor substrate 1 from the storage container 18 onto the relay stand 23. After all the semiconductor substrates 1 in the storage container 18 are moved onto the relay stand 23, the operator replaces the empty storage container 18 with the storage container 18 in which the semiconductor substrate 1 is stored. Thereby, the semiconductor substrate 1 can be supplied to the supply unit 8.

(Pre-processing section)
FIG. 3 is a schematic perspective view showing the configuration of the preprocessing unit. As shown in FIG. 3A, the pretreatment unit 9 includes a base 24, and a pair of first guide rails 25 and second guide rails 26 extending in the X direction are arranged on the base 24. is set up. A first stage 27 as a mounting table that reciprocates in the X direction along the first guide rail 25 is installed on the first guide rail 25, and along the second guide rail 26 on the second guide rail 26. A second stage 28 is placed as a mounting table that reciprocates in the X direction. The first stage 27 and the second stage 28 include a linear motion mechanism and can reciprocate. As this linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the lifting device 16 can be used.

  A placement surface 27a is installed on the upper surface of the first stage 27, and a suction-type chuck mechanism is formed on the placement surface 27a. After the transport unit 13 places the semiconductor substrate 1 on the placement surface 27a, the pretreatment unit 9 can fix the semiconductor substrate 1 to the placement surface 27a by operating the chuck mechanism. Similarly, a mounting surface 28a is installed on the upper surface of the second stage 28, and a suction chuck mechanism is formed on the mounting surface 28a. After the transport unit 13 places the semiconductor substrate 1 on the placement surface 28a, the pretreatment unit 9 can fix the semiconductor substrate 1 to the placement surface 28a by operating the chuck mechanism.

  The place of the placement surface 27a when the first stage 27 is located on the X direction side is the first relay place 9a, and the place of the placement surface 28a when the second stage 28 is located in the X direction is the first place. 2 relay place 9b. The relay location 9c, which is the first relay location 9a and the second relay location 9b, is located within the operating range of the grip portion 13a, and the placement surface 27a and the placement surface 28a are exposed at the relay location 9c. Accordingly, the transport unit 13 can easily place the semiconductor substrate 1 on the placement surface 27a and the placement surface 28a. After the pretreatment is performed on the semiconductor substrate 1, the semiconductor substrate 1 stands by on the placement surface 27a located at the first relay location 9a or the placement surface 28a located at the second relay location 9b. Therefore, the grip part 13a of the transport part 13 can easily grip the semiconductor substrate 1 and move it.

  A flat plate-like support portion 29 is erected in the −X direction of the base 24. A guide rail 30 extending in the Y direction is installed on the upper side of the surface of the support portion 29 on the X direction side. A carriage 31 that moves along the guide rail 30 is installed at a location facing the guide rail 30. The carriage 31 includes a linear motion mechanism and can reciprocate. As this linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the lifting device 16 can be used.

  A processing unit 32 is installed on the base 24 side of the carriage 31. Examples of the processing unit 32 include a mercury lamp, a hydrogen burner, an excimer laser, a plasma discharge unit, and a corona discharge unit. When a mercury lamp is used, the liquid repellency of the surface of the semiconductor substrate 1 can be modified by irradiating the semiconductor substrate 1 with ultraviolet rays. When a hydrogen burner is used, the surface can be roughened by partially reducing the oxidized surface of the semiconductor substrate 1, and when an excimer laser is used, the surface of the semiconductor substrate 1 is partially melted and solidified. When plasma discharge or corona discharge is used, the surface of the semiconductor substrate 1 can be roughened by mechanical cutting. In this embodiment, for example, a mercury lamp is employed. The preprocessing unit 9 reciprocates the carriage 31 while irradiating the processing unit 32 with ultraviolet rays. Thereby, the pre-processing unit 9 can irradiate ultraviolet rays over a wide area of the processing place 9d.

  The pretreatment unit 9 is entirely covered with an exterior part 33. Inside the exterior part 33, a door part 34 that can move up and down is installed. Then, as shown in FIG. 3B, after the first stage 27 or the second stage 28 has moved to a position facing the carriage 31, the door 34 is lowered. Thereby, the ultraviolet rays irradiated by the processing unit 32 are prevented from leaking out of the preprocessing unit 9.

  When the mounting surface 27a or the mounting surface 28a is located at the relay place 9c, the transport unit 13 supplies the semiconductor substrate 1 to the mounting surface 27a and the mounting surface 28a. The preprocessing unit 9 performs the preprocessing by moving the first stage 27 or the second stage 28 on which the semiconductor substrate 1 is placed to the processing place 9d. After the preprocessing is completed, the preprocessing unit 9 moves the first stage 27 or the second stage 28 to the relay location 9c. Subsequently, the transport unit 13 removes the semiconductor substrate 1 from the placement surface 27a or the placement surface 28a.

(Applying part)
Next, the coating unit 10 that forms marks by discharging droplets onto the semiconductor substrate 1 will be described with reference to FIG. There are various types of apparatuses for ejecting droplets, and an apparatus using an ink jet method is preferable. The ink jet method is suitable for microfabrication because it can discharge minute droplets.

  FIG. 4A is a schematic perspective view showing the configuration of the application unit. Liquid droplets are ejected onto the semiconductor substrate 1 by the application unit 10. As shown to Fig.4 (a), the application part 10 is provided with the base 37 formed in the rectangular parallelepiped shape. The direction in which the droplet discharge head and the object to be discharged move relative to each other when discharging droplets is defined as a main scanning direction. The direction orthogonal to the main scanning direction is defined as the sub scanning direction. The sub-scanning direction is a direction in which the droplet discharge head and the discharge target are relatively moved when a line feed is made. In the present embodiment, the X direction is the main scanning direction, and the Y direction is the sub scanning direction.

  On the upper surface 37a of the base 37, a pair of guide rails 38 extending in the Y direction are provided so as to protrude over the entire width in the Y direction. A stage 39 having a linear motion mechanism (not shown) corresponding to the pair of guide rails 38 is attached to the upper side of the base 37. As the linear motion mechanism of the stage 39, a linear motor, a screw type linear motion mechanism, or the like can be used. In this embodiment, for example, a linear motor is employed. Then, it moves forward or backward along the Y direction at a predetermined speed. Repeating forward and backward movement is called scanning movement. Further, a sub-scanning position detection device 40 is disposed on the upper surface 37 a of the base 37 in parallel with the guide rail 38, and the position of the stage 39 is detected by the sub-scanning position detection device 40.

  A placement surface 41 is formed on the upper surface of the stage 39, and a suction-type substrate chuck mechanism (not shown) is provided on the placement surface 41. After the semiconductor substrate 1 is placed on the placement surface 41, the semiconductor substrate 1 is fixed to the placement surface 41 by a substrate chuck mechanism.

  The place of the placement surface 41 when the stage 39 is positioned in the −Y direction is the relay place 10a. The placement surface 41 is installed so as to be exposed within the operating range of the gripping portion 13a. Therefore, the transport unit 13 can easily place the semiconductor substrate 1 on the placement surface 41. After application | coating is performed to the semiconductor substrate 1, the semiconductor substrate 1 waits on the mounting surface 41 which is the relay place 10a. Therefore, the grip part 13a of the transport part 13 can easily grip the semiconductor substrate 1 and move it.

  A pair of support bases 42 are erected on both sides of the base 37 in the X direction, and guide members 43 extending in the X direction are installed on the pair of support bases 42. A guide rail 44 extending in the X direction is provided below the guide member 43 so as to protrude over the entire width in the X direction. A carriage 45 attached so as to be movable along the guide rail 44 is formed in a substantially rectangular parallelepiped shape. The carriage 45 includes a linear motion mechanism. As the linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the stage 39 can be used. Then, the carriage 45 scans and moves along the X direction. A main scanning position detector 46 is disposed between the guide member 43 and the carriage 45, and the position of the carriage 45 is measured. A head unit 47 is installed on the lower side of the carriage 45, and a droplet discharge head (not shown) is projected on the surface of the head unit 47 on the stage 39 side.

  FIG. 4B is a schematic side view showing the carriage. As shown in FIG. 4B, a head unit 47 and a curing unit 48 as a pair of irradiation units are disposed on the carriage 45 on the semiconductor substrate 1 side. On the semiconductor substrate 1 side of the head unit 47, three liquid droplet ejection heads 49 for ejecting liquid droplets are projected. The number and arrangement of the droplet discharge heads 49 are not particularly limited, and can be set according to the type of functional liquid to be discharged and the drawing pattern.

  An irradiating device for irradiating ultraviolet rays that cure the discharged droplets is disposed inside the curing unit 48. The curing unit 48 is disposed at a position sandwiching the head unit 47 in the main scanning direction. The irradiation device includes a light emitting unit and a heat radiating plate. A number of LED (Light Emitting Diode) elements are arranged in the light emitting unit. This LED element is an element that emits ultraviolet light, which is ultraviolet light, upon receiving power.

  A storage tank 50 is arranged on the upper side of the carriage 45 in the drawing, and the functional liquid is stored in the storage tank 50. The droplet discharge head 49 and the storage tank 50 are connected by a tube (not shown), and the functional liquid in the storage tank 50 is supplied to the droplet discharge head 49 through the tube.

  The functional liquid is mainly composed of a resin material, a photopolymerization initiator as a curing agent, a solvent or a dispersion medium. A functional liquid having an inherent function can be formed by adding a coloring material such as a pigment or a dye or a functional material such as a lyophilic or liquid repellent surface modifying material to the main material. In this embodiment, for example, a white pigment is added. The functional liquid resin material is a material for forming a resin film. The resin material is not particularly limited as long as the material is liquid at normal temperature and becomes a polymer by polymerization. Furthermore, a resin material having a low viscosity is preferable, and it is preferably in the form of an oligomer. A monomer form is more preferable. The photopolymerization initiator is an additive that acts on a crosslinkable group of the polymer to advance the crosslinking reaction. For example, benzyldimethyl ketal or the like can be used as the photopolymerization initiator. The solvent or the dispersion medium adjusts the viscosity of the resin material. By setting the viscosity at which the functional liquid can be easily discharged from the droplet discharge head, the droplet discharge head can stably discharge the functional liquid.

  FIG. 4C is a schematic plan view showing the head unit. As shown in FIG. 4C, a droplet discharge head 49 is disposed on the head unit 47, and a nozzle plate 51 is disposed on the surface of the droplet discharge head 49. A plurality of nozzles 52 are arranged on the nozzle plate 51. The number and arrangement of the nozzles 52 and heads are not particularly limited, and are set according to the pattern to be ejected. In the present embodiment, for example, one nozzle plate 51 has an array of nozzles 52 arranged in one row, and 15 nozzles 52 are arranged in one row.

  An irradiation port 48 a is formed on the lower surface of the curing unit 48. Then, ultraviolet light emitted from the irradiation device is irradiated toward the semiconductor substrate 1 from the irradiation port 48a.

  FIG. 4D is a schematic cross-sectional view of a main part for explaining the structure of the droplet discharge head. As shown in FIG. 4D, the droplet discharge head 49 includes a nozzle plate 51, and a nozzle 52 is formed on the nozzle plate 51. A cavity 53 communicating with the nozzle 52 is formed at a position above the nozzle plate 51 and facing the nozzle 52. Then, the functional liquid 54 is supplied to the cavity 53 of the droplet discharge head 49.

  A vibration plate 55 that vibrates in the vertical direction and expands or contracts the volume in the cavity 53 is installed above the cavity 53. A piezoelectric element 56 that extends in the vertical direction and vibrates the vibration plate 55 is disposed at a location facing the cavity 53 on the upper side of the vibration plate 55. The piezoelectric element 56 expands and contracts in the vertical direction to pressurize and vibrate the diaphragm 55, and the diaphragm 55 pressurizes the cavity 53 by enlarging and reducing the volume in the cavity 53. As a result, the pressure in the cavity 53 varies, and the functional liquid 54 supplied into the cavity 53 is discharged through the nozzle 52.

  When the droplet discharge head 49 receives a nozzle drive signal for controlling and driving the piezoelectric element 56, the piezoelectric element 56 expands and the diaphragm 55 reduces the volume in the cavity 53. As a result, the functional liquid 54 corresponding to the reduced volume is discharged as droplets 57 from the nozzles 52 of the droplet discharge head 49.

(Post-processing section)
FIG. 5 is a schematic perspective view showing the configuration of the post-processing unit. As shown in FIG. 5A, the post-processing unit 11 includes a base 60, and a pair of first guide rails 61 and second guide rails 62 extending in the X direction are arranged on the base 60. is set up. A third stage 63 as a mounting table that reciprocates in the X direction along the first guide rail 61 is installed on the first guide rail 61, and along the second guide rail 62 on the second guide rail 62. A fourth stage 64 is installed as a mounting table that reciprocates in the X direction. The third stage 63 and the fourth stage 64 include a linear motion mechanism and can reciprocate. As this linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the lifting device 16 can be used.

  A placement surface 63a is installed on the upper surface of the third stage 63, and a suction chuck mechanism is formed on the placement surface 63a. When the transport unit 13 places the semiconductor substrate 1 on the placement surface 63a, the semiconductor substrate 1 can be fixed to the placement surface 63a by operating the chuck mechanism. Similarly, a placement surface 64a is installed on the upper surface of the fourth stage 64, and a suction chuck mechanism is formed on the placement surface 64a. When the transport unit 13 places the semiconductor substrate 1 on the placement surface 64a, the semiconductor substrate 1 can be fixed to the placement surface 64a by operating the chuck mechanism.

  The place of the placement surface 63a when the third stage 63 is located in the −X direction is the third relay place 11a, and the place of the placement surface 64a when the fourth stage 64 is located in the −X direction. This is the fourth relay location 11b. The relay location 11c, which is the third relay location 11a and the fourth relay location 11b, is located within the operating range of the grip portion 13a, and the placement surface 63a and the placement surface 64a are exposed at the relay location 11c. Therefore, the transport unit 13 can easily place the semiconductor substrate 1 on the placement surface 63a and the placement surface 64a. After the post-processing is performed on the semiconductor substrate 1, the semiconductor substrate 1 stands by on the placement surface 63a located at the third relay location 11a or the placement surface 64a located at the fourth relay location 11b. Therefore, the grip part 13a of the transport part 13 can easily grip the semiconductor substrate 1 and move it.

  A flat plate-like support portion 65 is erected in the X direction of the base 60. A guide rail 66 extending in the Y direction is installed on the upper side of the surface of the support portion 65 on the −X side. A carriage 67 that reciprocates in the Y direction along the guide rail 66 is installed at a location facing the guide rail 66. The carriage 67 includes a linear motion mechanism and can reciprocate. As this linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the lifting device 16 can be used.

  On the base 60 side of the carriage 67, a lamp unit 68 and a warm air unit 69 as an irradiation unit are installed. The lamp unit 68 is an apparatus that cures the applied functional liquid 54 by irradiating the semiconductor substrate 1 with ultraviolet light. As the lamp unit 68, for example, a lamp a such as a metal halide lamp, a xenon lamp, a carbon arc lamp, a chemical lamp, a low pressure mercury lamp, or a high pressure mercury lamp can be used. More specifically, the lamp unit 68 may be a commercially available lamp such as an H lamp, D lamp, or V lamp manufactured by Fusion System. As a result, the semiconductor substrate 1 is irradiated with ultraviolet light, and the functional liquid 54 containing the curing agent is solidified or cured.

  The warm air unit 69 is a device that blows warm air to the semiconductor substrate 1 to solidify or cure the applied functional liquid 54. The hot air unit 69 includes a blower, a heater, a control device that adjusts the temperature of the hot air, and the like. Although a blower is not specifically limited, For example, it can comprise with a fan, a motor, etc. The heater is not particularly limited, and for example, a heating wire can be adopted. As a result, the temperature-controlled hot air is blown to the semiconductor substrate 1, and the functional liquid 54 is solidified or cured without causing damage. The post-processing unit 11 irradiates ultraviolet rays from the lamp unit 68 and reciprocates the carriage 67 while blowing warm air from the warm air unit 69. As a result, the post-processing unit 11 can irradiate ultraviolet rays and blow warm air over a wide area of the processing place 11d.

  The entire post-processing unit 11 is covered with an exterior unit 70. A door portion 71 that can move up and down is installed inside the exterior portion 70. Then, as shown in FIG. 5B, after the third stage 63 or the fourth stage 64 has moved to a position facing the carriage 67, the door portion 71 is lowered. Thereby, the ultraviolet rays emitted from the lamp unit 68 are prevented from leaking out of the post-processing unit 11.

  When the mounting surface 63a or the mounting surface 64a is located at the relay place 11c, the transport unit 13 supplies the semiconductor substrate 1 to the mounting surface 63a or the mounting surface 64a. Then, the post-processing unit 11 performs the post-processing by moving the third stage 63 or the fourth stage 64 on which the semiconductor substrate 1 is placed to the processing place 11d. After the post-processing is completed, the post-processing unit 11 moves the third stage 63 or the fourth stage 64 to the relay station 11c. Subsequently, the transport unit 13 removes the semiconductor substrate 1 from the placement surface 63a or the placement surface 64a.

(Storage section)
FIG. 6A is a schematic front view showing the storage portion, and FIGS. 6B and 6C are schematic side views showing the storage portion. As shown in FIGS. 6A and 6B, the storage unit 12 includes a base 74. An elevating device 75 is installed inside the base 74. As the lifting device 75, the same device as the lifting device 16 installed in the supply unit 8 can be used. A lifting plate 76 is connected to the lifting device 75 on the upper side of the base 74. The lifting plate 76 is lifted and lowered by the lifting device 75. A rectangular parallelepiped storage container 18 is installed on the lifting plate 76, and the semiconductor substrate 1 is stored in the storage container 18. The same container as the storage container 18 installed in the supply unit 8 is used as the storage container 18.

  A substrate extruding portion 78 and a relay stand 79 are installed on the Y direction side of the base 74 via a support member 77. A relay stand 79 is disposed on the substrate push-out portion 78 at a location on the Y direction side of the storage container 18. The board pushing part 78 includes an arm part 78a that moves in the Y direction and a linear motion mechanism that drives the arm part 78a. This linear motion mechanism is not particularly limited as long as it is a mechanism that moves linearly. In this embodiment, for example, an air cylinder that operates with compressed air is employed. The semiconductor substrate 1 is placed on the relay stand 79, and the arm portion 78 a can come into contact with the center of one end of the semiconductor substrate 1 on the Y direction side.

  The substrate pushing part 78 moves the arm part 78a in the -Y direction, so that the arm part 78a moves the semiconductor substrate 1 in the -Y direction. The relay stand 79 is formed with a recess having a width substantially the same as the width of the semiconductor substrate 1 in the X direction, and the semiconductor substrate 1 moves along the recess. And the position of the X direction of the semiconductor substrate 1 is determined by this recessed part. As a result, the semiconductor substrate 1 is moved into the storage container 18 as shown in FIG. A rail 18 c is formed in the storage container 18, and the rail 18 c is positioned on an extension line of a recess formed in the relay stand 79. Then, the semiconductor substrate 1 is moved along the rails 18 c by the substrate pushing part 78. Thereby, the semiconductor substrate 1 is stored in the storage container 18 with high quality.

  After the transport unit 13 moves the semiconductor substrate 1 onto the relay stand 79, the lifting device 75 raises the storage container 18. And the board | substrate extrusion part 78 drives the arm part 78a, and moves the semiconductor substrate 1 in the storage container 18. FIG. In this way, the storage unit 12 stores the semiconductor substrate 1 in the storage container 18. After the predetermined number of semiconductor substrates 1 are stored in the storage container 18, the operator replaces the storage container 18 in which the semiconductor substrate 1 is stored with the empty storage container 18. Thus, the operator can carry the plurality of semiconductor substrates 1 together to the next process.

  The storage unit 12 has a relay place 12a on which the semiconductor substrate 1 to be stored is placed. The transport unit 13 can store the semiconductor substrate 1 in the storage container 18 in cooperation with the storage unit 12 only by placing the semiconductor substrate 1 on the relay location 12a.

(Transport section)
Next, the conveyance part 13 which conveys the semiconductor substrate 1 is demonstrated according to FIG. FIG. 7 is a schematic perspective view illustrating the configuration of the transport unit. As shown in FIG. 7, the conveyance part 13 is provided with the base 82 formed in flat form. A support base 83 is disposed on the base 82. A cavity is formed inside the support base 83, and a rotation mechanism 83a including a motor, an angle detector, a speed reducer, and the like is installed in the cavity. The output shaft of the motor is connected to the speed reducer, and the output shaft of the speed reducer is connected to the first arm portion 84 disposed on the upper side of the support base 83. In addition, an angle detector is installed in connection with the motor output shaft, and the angle detector detects the rotation angle of the motor output shaft. Thereby, the rotation mechanism 83a can detect the rotation angle of the first arm portion 84 and rotate it to a desired angle.

  A rotation mechanism 85 is installed on the first arm portion 84 at the end opposite to the support base 83. The rotation mechanism 85 includes a motor, an angle detector, a speed reducer, and the like, and has the same function as the rotation mechanism installed in the support base 83. The output shaft of the rotation mechanism 85 is connected to the second arm portion 86. Accordingly, the rotation mechanism 85 can detect the rotation angle of the second arm portion 86 and rotate it to a desired angle.

  On the second arm portion 86, an elevating device 87 is disposed at the end opposite to the rotation mechanism 85. The elevating device 87 includes a linear motion mechanism and can be expanded and contracted by driving the linear motion mechanism. For this linear motion mechanism, for example, a mechanism similar to the lifting device 16 of the supply unit 8 can be used. A rotating device 88 is disposed below the lifting device 87.

  The rotation device 88 only needs to be able to control the rotation angle, and can be configured by combining various motors and a rotation angle sensor. In addition, a step motor capable of rotating at a predetermined rotation angle can be used. In this embodiment, for example, a step motor is employed. Further, a speed reducer may be arranged. It can be rotated at a finer angle.

  A gripping portion 13a is arranged on the lower side of the rotating device 88 in the drawing. The grip 13 a is connected to the rotation shaft of the rotation device 88. Therefore, the conveyance unit 13 can rotate the gripping unit 13 a by driving the rotating device 88. Furthermore, the conveyance part 13 can raise / lower the holding part 13a by driving the raising / lowering apparatus 87. FIG.

  The gripping portion 13a has four linear finger portions 13c, and a suction mechanism that sucks and sucks the semiconductor substrate 1 is formed at the tip of the finger portion 13c. And the holding part 13a can hold | grip the semiconductor substrate 1 by operating this adsorption | suction mechanism.

  A control device 89 is installed on the −Y direction side of the base 82. The control device 89 includes a central processing unit, a storage unit, an interface, an actuator drive circuit, an input device, a display device, and the like. The actuator drive circuit is a circuit that drives the rotation mechanism 83a, the rotation mechanism 85, the lifting device 87, the rotation device 88, and the suction mechanism of the grip portion 13a. These devices and circuits are connected to the central processing unit via an interface. In addition, an angle detector is connected to the central processing unit via an interface. The storage unit stores program software indicating operation procedures for controlling the transport unit 13 and data used for control. The central processing unit is a device that controls the transport unit 13 in accordance with program software. The control device 89 receives the output of the detector arranged in the transport unit 13 and detects the position and posture of the grip unit 13a. And the control apparatus 89 performs the control which drives the rotation mechanism 83a and the rotation mechanism 85, and moves the holding part 13a to a predetermined position.

(Drawing method)
Next, a drawing method using the above-described droplet discharge device 7 will be described with reference to FIGS. FIG. 8 is a flowchart for illustrating a drawing method, and FIG. 9 is a schematic diagram for explaining the drawing method. In the flowchart of FIG. 8, step S1 corresponds to a carry-in process, in which the supply unit moves the semiconductor substrate from the storage container to a relay location. Next, the process proceeds to step S2. Step S2 corresponds to a first conveying process as a material supply process. This process is a process in which the transport unit moves the semiconductor substrate from the relay location of the supply unit to the relay location of the pretreatment unit. Next, the process proceeds to step S3. Step S3 corresponds to a pretreatment process. This step is a step in which the pretreatment unit pretreats the surface of the semiconductor substrate. Next, the process proceeds to step S4. Step S4 corresponds to a second transport process as a material removal process. This process is a process in which the transport unit moves the semiconductor substrate from the relay location of the pretreatment unit to the relay location of the coating unit. Next, the process proceeds to step S5. Step S5 corresponds to a drawing process. This step is a step of drawing various marks on the semiconductor substrate. Next, the process proceeds to step S6. Step S6 corresponds to a third transport process as a material supply process. This process is a process in which the transport unit moves the semiconductor substrate from the relay location of the coating unit to the relay location of the post-processing unit. Next, the process proceeds to step S7. Step S7 corresponds to a post-processing step. This step is a step in which the post-processing unit solidifies or cures the functional liquid applied to the surface of the semiconductor substrate. Next, the process proceeds to step S8. Step S8 corresponds to a fourth transport process as a material removal process. This process is a process in which the transfer unit moves the semiconductor substrate from the relay location of the post-processing unit to the relay location of the storage unit. Next, the process proceeds to step S9. Step S9 corresponds to a storage process, in which the storage unit moves the semiconductor substrate from the relay location to the storage container. Through the above steps, the manufacturing process of drawing various marks on the semiconductor substrate 1 is completed.

  Next, the manufacturing method will be described in detail with reference to FIG. 9 in association with the steps shown in FIG. The semiconductor substrate 1 is stored in the storage container 18. In the carrying-in process in step S1, the supply unit 8 drives the substrate drawing unit 22 to move the semiconductor substrate 1 to the relay location 8a. As a result, as shown in FIG. 9A, the semiconductor substrate 1 stands by at the relay location 8a, and the transport unit 13 can easily hold the semiconductor substrate 1.

  In the first transfer process of step S2, the transfer unit 13 moves the gripping unit 13a to a location facing the semiconductor substrate 1 at the relay location 8a. And the conveyance part 13 hold | grips the semiconductor substrate 1 by making the holding part 13a adsorb | suck the semiconductor substrate 1. FIG. Next, the transport unit 13 raises the gripping unit 13 a and then moves the gripping unit 13 a to a location facing the relay location 9 c of the preprocessing unit 9. In the pre-processing unit 9, one of the first stage 27 and the second stage 28 is located at the relay place 9c. The conveyance unit 13 moves the gripping unit 13a to a location facing the stage located at the relay location 9c. Subsequently, the transport unit 13 lowers the gripping unit 13a and then releases the suction of the semiconductor substrate 1, thereby placing the semiconductor substrate 1 on the first stage 27 or the second stage 28 located at the relay location 9c. To do. As a result, as shown in FIG. 9B, the semiconductor substrate 1 is placed on the first stage 27 located at the relay location 9c. Alternatively, as shown in FIG. 9C, the semiconductor substrate 1 is placed on the second stage 28 located at the relay location 9c.

  In the preprocessing step of step S3, when the transport unit 13 moves the semiconductor substrate 1 onto the first stage 27, the preprocessing of the semiconductor substrate 1 on the second stage 28 is performed at the processing location 9d inside the preprocessing unit 9. Has been done. Then, after the pretreatment of the semiconductor substrate 1 on the second stage 28 is completed, the second stage 28 moves the semiconductor substrate 1 to the second relay location 9b. Next, the preprocessing unit 9 drives the first stage 27 to move the semiconductor substrate 1 placed on the first relay location 9 a to the processing location 9 d facing the carriage 31. Thereby, the pretreatment of the semiconductor substrate 1 on the first stage 27 can be started immediately after the pretreatment of the semiconductor substrate 1 on the second stage 28 is completed.

  Subsequently, the pretreatment unit 9 modifies the surface of the semiconductor device 3 by irradiating the semiconductor device 3 mounted on the semiconductor substrate 1 with ultraviolet rays. Thereby, the appearance quality of the mark to be drawn can be improved. After pre-processing, the pre-processing unit 9 drives the first stage 27 to move the semiconductor substrate 1 to the first relay location 9a.

  Similarly, when the transfer unit 13 moves the semiconductor substrate 1 onto the second stage 28, the pretreatment of the semiconductor substrate 1 on the first stage 27 is performed at the processing location 9 d inside the pretreatment unit 9. . Then, after the pretreatment of the semiconductor substrate 1 on the first stage 27 is completed, the first stage 27 moves the semiconductor substrate 1 to the first relay location 9a. Next, the pretreatment unit 9 drives the second stage 28 to move the semiconductor substrate 1 placed on the second relay place 9 b to the treatment place 9 d facing the carriage 31. Thereby, the pretreatment of the semiconductor substrate 1 on the second stage 28 can be started immediately after the pretreatment of the semiconductor substrate 1 on the first stage 27 is completed. Subsequently, the pretreatment unit 9 modifies the surface of the semiconductor device 3 by irradiating the semiconductor device 3 mounted on the semiconductor substrate 1 with ultraviolet rays. After performing the pretreatment, the pretreatment unit 9 drives the second stage 28 to move the semiconductor substrate 1 to the second relay location 9b.

  In the second transport process of step S4, when the preprocessed semiconductor substrate 1 is waiting at the first relay location 9a, the transport unit 13 is placed at a location facing the semiconductor substrate 1 at the first relay location 9a. Move. First, the transport unit 13 lowers the gripping part 13 a to attract the semiconductor substrate 1, thereby causing the gripping part 13 a to grip the semiconductor substrate 1. Next, the transport unit 13 raises the gripping unit 13a and then moves the gripping unit 13a to a location facing the relay location 10a of the application unit 10. Subsequently, the transport unit 13 lowers the gripping unit 13 a and then releases the suction of the semiconductor substrate 1 to place the semiconductor substrate 1 on the relay location 10 a of the coating unit 10. As a result, as shown in FIG. 9A, the semiconductor substrate 1 is placed on the stage 39 positioned at the relay location 10 a of the application unit 10.

  Similarly, when the semiconductor substrate 1 is waiting at the second relay location 9b, the transport unit 13 moves the gripping portion 13a to a location facing the semiconductor substrate 1 at the second relay location 9b. And the conveyance part 13 mounts the semiconductor substrate 1 in the relay place 10a of the application part 10 with the same method. As a result, as shown in FIG. 9D, the semiconductor substrate 1 is placed on the stage 39 located at the relay location 10 a of the application unit 10.

  In the drawing process of step S <b> 5, the coating unit 10 operates the chuck mechanism to hold the semiconductor substrate 1 placed on the stage 39 on the stage 39. The application unit 10 ejects droplets 57 from the nozzles 52 formed on the droplet ejection head 49 while scanning and moving the stage 39 and the carriage 45. Thereby, marks such as the company name mark 4, the model code 5, and the production number 6 are drawn on the surface of the semiconductor device 3. Then, the mark is irradiated with ultraviolet rays from the curing unit 48 installed on the carriage 45. As a result, since the functional liquid 54 that forms the mark contains a photopolymerization initiator that starts polymerization by ultraviolet rays, the surface of the mark is immediately solidified or cured. After drawing, the coating unit 10 moves the stage 39 on which the semiconductor substrate 1 is placed to the relay location 10a. Thereby, the conveyance part 13 can make it easy to hold | grip the semiconductor substrate 1. FIG. Then, the application unit 10 stops the operation of the chuck mechanism and releases the holding of the semiconductor substrate 1.

  In the third transfer step of step S6, the transfer unit 13 moves the gripping unit 13a to a location facing the semiconductor substrate 1 at the relay location 10a. Then, the transport unit 13 moves down the gripping unit 13 a to suck the semiconductor substrate 1 and grips the semiconductor substrate 1. Next, the conveyance part 13 raises the holding part 13a. Subsequently, the transport unit 13 places the semiconductor substrate 1 on the third stage 63 or the fourth stage 64 located at the relay place 11c.

  As shown in FIG. 9A, when the third stage 63 is waiting without the semiconductor substrate 1 being placed on the third relay location 11a, the transport unit 13 is placed at a location facing the third relay location 11a. The grip 13a is moved. Subsequently, the transport unit 13 lowers the gripping unit 13 a and then releases the suction of the semiconductor substrate 1, thereby placing the semiconductor substrate 1 on the third relay location 11 a of the post-processing unit 11. As a result, as shown in FIG. 9B, the semiconductor substrate 1 is placed on the third stage 63 located at the third relay location 11 a of the post-processing unit 11.

  As shown in FIG. 9D, when the fourth stage 64 is waiting without the semiconductor substrate 1 being placed on the fourth relay place 11b, the transport unit 13 is placed at a place facing the fourth relay place 11b. The grip 13a is moved. Subsequently, the transport unit 13 lowers the gripping unit 13 a and then releases the suction of the semiconductor substrate 1, thereby placing the semiconductor substrate 1 on the fourth relay location 11 b of the post-processing unit 11. As a result, as shown in FIG. 9C, the semiconductor substrate 1 is placed on the fourth stage 64 located at the fourth relay location 11 b of the post-processing unit 11.

  In the post-processing step of step S7, when the transfer unit 13 moves the semiconductor substrate 1 onto the third stage 63, the post-processing of the semiconductor substrate 1 on the fourth stage 64 is performed at the processing location 11d inside the post-processing unit 11. Has been done. Then, after the post-processing of the semiconductor substrate 1 on the fourth stage 64 is completed, the fourth stage 64 moves the semiconductor substrate 1 to the fourth relay location 11b. Next, the post-processing unit 11 drives the third stage 63 to move the semiconductor substrate 1 placed on the third relay location 11 a to the processing location 11 d facing the carriage 67. Thereby, the post-processing of the semiconductor substrate 1 on the third stage 63 can be started immediately after the post-processing of the semiconductor substrate 1 on the fourth stage 64 is completed.

  Subsequently, the post-processing unit 11 solidifies or cures the mark drawn on the surface of the semiconductor device 3 by irradiating the semiconductor device 3 mounted on the semiconductor substrate 1 with ultraviolet rays and blowing warm air. Thereby, the droplet 57 can be fixed to the semiconductor device 3 and the durability of the mark can be improved. After performing the post-processing, the post-processing unit 11 drives the third stage 63 to move the semiconductor substrate 1 to the third relay location 11a.

  Similarly, when the transport unit 13 moves the semiconductor substrate 1 onto the fourth stage 64, the post-processing of the semiconductor substrate 1 on the third stage 63 is performed at the processing location 11 d inside the post-processing unit 11. . Then, after the post-processing of the semiconductor substrate 1 on the third stage 63 is completed, the third stage 63 moves the semiconductor substrate 1 to the third relay location 11a. Next, the post-processing unit 11 drives the fourth stage 64 to move the semiconductor substrate 1 placed on the fourth relay location 11 b to the processing location 11 d facing the carriage 67. Thereby, the post-processing of the semiconductor substrate 1 on the fourth stage 64 can be started immediately after the post-processing of the semiconductor substrate 1 on the third stage 63 is completed.

  Then, the mark drawn on the surface of the semiconductor device 3 is solidified or cured by the same method as when the semiconductor substrate 1 on the third stage 63 is post-processed. Thereby, while the post-processing is performed on the semiconductor substrate 1 placed on one stage, the semiconductor substrate 1 can be placed on the other stage to prepare for the post-processing.

  As shown in FIG. 9B, when the semiconductor substrate 1 is waiting at the third relay location 11a, the transport unit 13 faces the semiconductor substrate 1 at the third relay location 11a in the fourth transport step of Step S8. The gripping part 13a is moved to the place to be performed. And the conveyance part 13 makes the holding part 13a hold | grip the semiconductor substrate 1 by descending | holding the holding part 13a and attracting | sucking the semiconductor substrate 1. FIG. Next, the transport unit 13 raises the gripping unit 13 a and then moves the gripping unit 13 a to a location facing the relay location 12 a of the storage unit 12. Subsequently, the transport unit 13 lowers the gripping unit 13 a and then releases the suction of the semiconductor substrate 1 to place the semiconductor substrate 1 on the relay location 12 a of the storage unit 12. As a result, as shown in FIG. 9A, the semiconductor substrate 1 is placed on the relay stand 79 located at the relay place 12 a of the storage unit 12.

  As shown in FIG. 9C, when the semiconductor substrate 1 is waiting at the fourth relay location 11b, the transport unit 13 moves the gripping portion 13a to a location facing the semiconductor substrate 1 at the fourth relay location 11b. . Then, the transport unit 13 places the semiconductor substrate 1 on the relay location 12a of the storage unit 12 by the same method. As a result, as shown in FIG. 9D, the semiconductor substrate 1 is placed on the relay stand 79 located at the relay place 12 a of the storage unit 12.

  In the storage step of step S9, the storage unit 12 drives the lifting device 75 to raise the storage container 18. Thereby, the vacant place of the storage container 18 is positioned on the extension line of the semiconductor substrate 1. Next, the storage unit 12 drives the substrate extruding unit 78 to move the semiconductor substrate 1 placed on the relay stand 79 of the relay location 12 a to the storage container 18. As a result, the semiconductor substrate 1 is stored in the storage container 18. Through the above steps, the manufacturing process of drawing various marks on the semiconductor substrate 1 is completed.

  Next, the flow of the semiconductor substrate 1 with respect to the transition of each process will be described with reference to FIG. As shown in FIG. 8, the semiconductor substrate 1 is supplied to the relay place 8a in the carrying-in process of step S1. Then, the semiconductor substrate 1 is transferred from the relay location 8a to the relay location 9c in the first transfer process of step S2. At this time, the semiconductor substrate 1 is alternately transferred to the first relay location 9a and the second relay location 9b. In the preprocessing step of step S3, preprocessing is performed on the semiconductor substrate 1 on the first stage 27 or the semiconductor substrate 1 on the second stage 28 in the processing place 9d. In the second transport step of step S4, the transport unit 13 transports the semiconductor substrate 1 that has been preprocessed.

  While step S3 is being performed, steps S2 and S4 are performed. That is, in step S3, the second stage 28 stands by at the second relay location 9b while the semiconductor substrate 1 on the first stage 27 is being preprocessed. Then, the semiconductor substrate 1 is delivered at the second relay location 9b. Similarly, the first stage 27 stands by at the first relay location 9a while preprocessing the semiconductor substrate 1 on the second stage 28. Then, the semiconductor substrate 1 is delivered at the first relay location 9a. Therefore, in step S3, preprocessing can be performed with high productivity by exchanging stages.

  A mark is drawn on the semiconductor device 3 in the drawing step of step S5. Then, the semiconductor substrate 1 is transferred from the relay place 10a to the relay place 11c in the third transfer step of Step S6. At this time, the semiconductor substrate 1 is alternately transferred to the third relay location 11a and the fourth relay location 11b. In the post-processing step of step S7, post-processing is performed on the semiconductor substrate 1 on the third stage 63 and the semiconductor substrate 1 on the fourth stage 64. In the fourth transfer step of step S8, the transfer unit 13 transfers the semiconductor substrate 1 that has been post-processed.

  While step S7 is being performed, steps S6 and S8 are performed. In other words, the semiconductor substrate 1 is transferred on the fourth stage 64 while post-processing is performed on the semiconductor substrate 1 on the third stage 63 in step S7. Similarly, the semiconductor substrate 1 is transferred on the third stage 63 while post-processing is performed on the semiconductor substrate 1 on the fourth stage 64. Therefore, in step S7, post-processing can be performed by exchanging stages with high productivity.

As described above, this embodiment has the following effects.
(1) According to the present embodiment, the droplets 57 are discharged to the semiconductor substrate 1 after the surface state of the semiconductor substrate 1 is modified. As a result, the spread of the droplets 57 that have landed on the semiconductor substrate 1 can be adjusted.

  (2) According to the present embodiment, the first transfer process in step S2 and the second transfer process in step S4 are performed while the semiconductor substrate 1 is preprocessed in the preprocess process in step S3. Thereby, the semiconductor substrate 1 before processing is supplied to the relay location 9c, and the processed semiconductor substrate 1 is removed from the relay location 9c. That is, a 1st conveyance process, a 2nd conveyance process, and a pre-processing process are performed in parallel. In this method, the semiconductor substrate 1 is transferred and preprocessed in a shorter time than when the first transfer step, the pretreatment step, and the second transfer step are sequentially performed independently. Therefore, it is possible to draw with high productivity.

  (3) According to the present embodiment, the preprocessing unit 9 uses the first stage 27 and the second stage 28, and the first stage 27 and the second stage 28 are between the relay place 9c and the processing place 9d. To move. On the stage located at the relay place 9c, the semiconductor substrate 1 is supplied and removed. Then, the semiconductor substrate 1 is processed at the stage located at the processing place 9d. Therefore, while the semiconductor substrate 1 positioned at the processing location 9d is being processed, the removal and supply of the semiconductor substrate 1 can be performed on the stage positioned at the relay location 9c. As a result, the time required for preprocessing can be reduced.

  (4) According to the present embodiment, after applying the droplets 57 to the semiconductor device 3, the droplets 57 on the surface of the semiconductor device 3 are solidified or cured in the post-processing step of Step S7. Therefore, the droplets on the surface of the semiconductor device 3 can be reliably fixed.

  (5) According to the present embodiment, the third transfer process in step S6 and the fourth transfer process in step S8 are performed while the semiconductor substrate 1 is post-processed in the post-process in step S7. Thereby, the semiconductor substrate 1 before post-processing is supplied to the relay place 11c, and the post-processed semiconductor substrate 1 is removed from the relay place 11c. That is, the third transport process, the fourth transport process, and the post-processing process are performed in parallel. In this method, conveyance and post-processing are performed in a shorter time than when the third conveyance step, the post-processing step, and the fourth conveyance step are sequentially performed independently. Therefore, it is possible to draw with high productivity.

  (6) According to the present embodiment, the application unit 10 solidifies or cures the droplets 57 landed from the curing unit 48 by irradiating the droplets with ultraviolet rays. Accordingly, the discharged droplets 57 can be solidified or cured in a short time. Furthermore, by repeating the discharge of the droplets 57 and the irradiation of the ultraviolet rays, it is possible to prevent different types of droplets 57 from intermingling.

(Second Embodiment)
Next, a schematic perspective view showing the configuration of the pre-processing unit in FIG. 10A and a schematic perspective view showing the configuration of the post-processing unit in FIG. 10B for one embodiment of the characteristic pre-processing unit and post-processing unit. This will be described with reference to the drawings.
This embodiment is different from the first embodiment in that the stage includes a rotation mechanism instead of the linear motion mechanism. Note that description of the same points as in the first embodiment is omitted.

(Pre-processing section)
That is, in the present embodiment, as shown in FIG. 10A, a preprocessing unit 91 is used instead of the preprocessing unit 9 in the first embodiment. The preprocessing unit 91 includes a base 92, and a rotary table 93 serving as a mounting table is installed on the base 92. A rotation mechanism including a motor, a speed reduction mechanism, and a rotation angle detection unit is installed inside the base 92. The output shaft of the rotation mechanism is connected to the rotation center 93 c of the rotary table 93. The rotating mechanism rotates the rotary table 93 to a desired angle.

  The rotary table 93 is provided with a first placement surface 93a and a second placement surface 93b as placement locations. A suction type chuck mechanism is formed on the first placement surface 93a and the second placement surface 93b. After the transport unit 13 places the semiconductor substrate 1 on the first placement surface 93a or the second placement surface 93b, the pretreatment unit 91 causes the semiconductor substrate 1 to move to the first placement surface 93a or the second placement surface 93b. It can be fixed to the second placement surface 93b.

  The pre-processing unit 91 includes the same guide rail 30, carriage 31, and processing unit 32 as the pre-processing unit 9 of the first embodiment, and can perform pre-processing on the semiconductor substrate 1. A place opposite to the place through which the carriage 31 passes is defined as a processing place 91d. The processing place 91d is a place where the semiconductor substrate 1 is preprocessed. The first placement surface 93 a and the second placement surface 93 b are disposed at a location that is symmetrical with respect to the rotation center 93 c of the turntable 93. And when the 2nd mounting surface 93b is located in the process place 91d, the 1st mounting surface 93a is located in the place exposed within the operation | movement range of the holding part 13a. This place is referred to as a relay place 91c. The relay place 91c is a place where the transport unit 13 places the semiconductor substrate 1 on the placement surface. Thereby, while the pretreatment is performed on the semiconductor substrate 1 placed on the second placement surface 93b, the transport unit 13 can easily place the semiconductor substrate 1 on the first placement surface 93a. .

  The pre-processing unit 91 can move the first placement surface 93a from the processing place 91d to the relay place 91c by rotating the turntable 93. At this time, the second placement surface 93b moves from the relay location 91c to the processing location 91d. That is, the location of the first placement surface 93a and the location of the second placement surface 93b can be interchanged.

(Pre-processing method)
In the first transport step of step S2, the transport unit 13 places the semiconductor substrate 1 on the first placement surface 93a located at the relay location 91c and supplies the material. Thereafter, in the preprocessing step of Step S3, the preprocessing unit 91 rotates the turntable 93 to move the first placement surface 93a from the relay location 91c to the processing location 91d. And while the process part 32 is pre-processing to the semiconductor substrate 1, step S2 is performed in parallel. That is, the transport unit 13 places the semiconductor substrate 1 on the second placement surface 93b and supplies the material at the relay location 91c. After pre-processing is performed, the pre-processing unit 91 moves the first placement surface 93a from the processing location 91d to the relay location 91c by rotating the turntable 93.

  In parallel with this operation, the semiconductor substrate 1 placed on the second placement surface 93b is moved from the relay location 91c to the processing location 91d. Next, the processing unit 32 preprocesses the semiconductor substrate 1 at the processing location 91d. In the meantime, the second conveyance process of step S4 and step S2 are performed in parallel. That is, in the relay place 91c, the transport unit 13 removes the processed semiconductor substrate 1 placed on the first placement surface 93a and moves to the coating unit 10. And the conveyance part 13 mounts the semiconductor substrate 1 before a process on the 1st mounting surface 93a located in the relay place 91c, and supplies it. That is, while the processing unit 32 performs preprocessing at the processing location 91d, the transfer unit 13 removes the processed semiconductor substrate 1 at the relay location 91c and supplies the semiconductor substrate 1 before processing. Thus, the preprocessing unit 91 can perform preprocessing with high productivity.

(Post-processing section)
As shown in FIG. 10B, a post-processing unit 94 is used instead of the post-processing unit 11 in the first embodiment. The post-processing unit 94 includes a base 95, and a rotary table 96 as a mounting table is disposed on the base 95. A rotation mechanism including a motor, a speed reduction mechanism, and a rotation angle detection unit is installed inside the base 95. The output shaft of the rotation mechanism is connected to the rotation center 96 c of the rotary table 96. The rotating mechanism rotates the rotary table 96 to a desired angle.

  The rotary table 96 is provided with a third placement surface 96a and a fourth placement surface 96b as placement locations. A suction chuck mechanism is formed on the third mounting surface 96a and the fourth mounting surface 96b. After the transport unit 13 places the semiconductor substrate 1 on the third placement surface 96a or the fourth placement surface 96b, the post-processing unit 94 moves the semiconductor substrate 1 to the third placement surface 96a or the fourth placement surface 96b by operating the chuck mechanism. It can fix to the 4th mounting surface 96b.

  The post-processing unit 94 includes the same guide rail 66, carriage 67, lamp unit 68, and hot air unit 69 as the post-processing unit 11 of the first embodiment, and can perform post-processing on the semiconductor substrate 1. A place facing the place through which the carriage 67 passes is defined as a processing place 94d. The processing place 94d is a place where the semiconductor substrate 1 is post-processed. The third placement surface 96 a and the fourth placement surface 96 b are disposed at a location that is symmetrical with respect to the rotation center 96 c of the turntable 96. And when the 4th mounting surface 96b is located in the process place 94d, the 3rd mounting surface 96a is located in the place exposed within the operation | movement range of the holding part 13a. This place is referred to as a relay place 94c. The relay place 94c is a place where the transport unit 13 places the semiconductor substrate 1 on the placement surface. As a result, the transfer unit 13 can easily place the semiconductor substrate 1 on the third placement surface 96a while performing post-processing on the semiconductor substrate 1 placed on the fourth placement surface 96b. .

  The post-processing unit 94 can move the third placement surface 96a from the processing place 94d to the relay place 94c by rotating the turntable 96. At this time, the fourth placement surface 96b moves from the relay place 94c to the processing place 94d. That is, the location of the third placement surface 96a and the location of the fourth placement surface 96b can be interchanged.

(Post-processing method)
In the third transport step of step S6, the transport unit 13 places the semiconductor substrate 1 on the third placement surface 96a and feeds it. Thereafter, the post-processing section 94 moves the third mounting surface 96a from the relay location 94c to the processing location 94d by rotating the rotary table 96 in the post-processing step of Step S7. And while post-processing part 94 is performing post-processing to semiconductor substrate 1, Step S6 is performed in parallel. That is, in the relay place 94c, the transport unit 13 places the semiconductor substrate 1 on the fourth placement surface 96b and supplies the material. After the post-processing is performed, the post-processing unit 94 moves the third placement surface 96a from the processing place 94d to the relay place 94c by rotating the rotary table 96.

  In parallel with this operation, the semiconductor substrate 1 placed on the fourth placement surface 96b is moved from the relay place 94c to the processing place 94d. Next, while the post-processing unit 94 performs post-processing on the semiconductor substrate 1, the fourth transfer process in step S <b> 8 and step S <b> 6 are performed in parallel. That is, at the relay location 94 c, the transport unit 13 removes the processed semiconductor substrate 1 placed on the third placement surface 96 a and moves to the storage unit 12. And the conveyance part 13 mounts the semiconductor substrate 1 before a process on the 3rd mounting surface 96a located in the relay place 94c, and supplies it. That is, while the post-processing unit 94 performs post-processing at the processing place 94d, the transfer unit 13 removes the processed semiconductor substrate 1 and supplies the semiconductor substrate 1 before processing at the relay place 94c. Accordingly, the post-processing unit 94 can perform post-processing with high productivity.

As described above, this embodiment has the following effects.
(1) According to the present embodiment, the preprocessing unit 91 includes the rotary table 93, and the rotary table 93 includes two mounting places, a first mounting surface 93a and a second mounting surface 93b. While the pretreatment is performed on the semiconductor substrate 1 placed at one placement location of the turntable 93, the removal and supply of the semiconductor substrate 1 can be performed at another placement location of the turntable 93. Thereby, when the pretreatment performed on one semiconductor substrate 1 is completed, the pretreatment of the semiconductor substrate 1 placed at another placement location can be started in a short time. Therefore, the pretreatment of the semiconductor substrate 1 can be performed with high productivity.

  (2) According to the present embodiment, the post-processing unit 94 includes the rotary table 96, and the rotary table 96 includes two mounting locations, a third mounting surface 96a and a fourth mounting surface 96b. While post-processing is performed on the semiconductor substrate 1 placed at one placement location of the turntable 96, the removal and supply of the semiconductor substrate 1 can be performed at another placement location of the turntable 96. Thereby, when the post-processing performed on one semiconductor substrate 1 is completed, the post-processing of the semiconductor substrate 1 placed on another placement place can be started in a short time. Therefore, the post-processing of the semiconductor substrate 1 can be performed with high productivity.

In addition, this embodiment is not limited to embodiment mentioned above, A various change and improvement can also be added. A modification will be described below.
(Modification 1)
In the first embodiment, a scalar type robot is adopted as the transport unit 13, but the present invention is not limited to the form of the robot. Various types of robots such as vertical articulated robots, orthogonal robots, and parallel link robots can be employed. Also in this case, the robot can supply the semiconductor substrate 1 to each part.

(Modification 2)
In the first embodiment, the mark is drawn on the semiconductor device 3 mounted on the semiconductor substrate 1. The object to be drawn is not limited to the semiconductor device 3. Any solid that can draw a mark may be used. Also in this case, the mark can be drawn with high productivity using the droplet discharge device 7.

(Modification 3)
In the first embodiment, the functional liquid 54 contains a photopolymerization initiator, but a functional liquid 54 that does not contain a photopolymerization initiator may be used. At this time, the landed droplets 57 may be cured by heating. In this case, the head unit 47 does not necessarily have to be provided with the curing unit 48 that irradiates ultraviolet rays. Further, the lamp unit 68 is not necessarily installed in the post-processing unit 11. The droplets 57 that have landed using the hot air unit 69 of the post-processing unit 11 may be solidified or cured. In this case, the droplet discharge device 7 can be simplified.

(Modification 4)
In the first embodiment, the supply unit 8 and the storage unit 12 include the storage container 18. Not limited to this, a belt conveyor may be used. Then, one end on the belt conveyor may be set as a supply relay place 8 a, and the transport unit 13 may move the semiconductor substrate 1 on the relay place 8 a to the first relay place 9 a of the preprocessing unit 9. Further, one end on the belt conveyor may be set as a carry-out relay place 12a, and the transport unit 13 may move the semiconductor substrate 1 on the third relay place 11a of the post-processing unit 11 to the relay place 12a. The semiconductor substrate 1 can be moved with high productivity between the front-rear process apparatus and the droplet discharge apparatus 7.

(Modification 5)
In the first embodiment, the piezoelectric element 56 is used as the pressurizing means for pressurizing the cavity 53, but another method may be used. For example, you may pressurize using a coil and a magnet. In addition, a heater wiring may be disposed in the cavity 53 to expand and pressurize the gas contained in the functional liquid 54. Further, the diaphragm 55 may be deformed and pressurized using electrostatic attraction and repulsion. In either case, drawing can be performed by using the same method as in the first embodiment.

(Modification 6)
In the first embodiment, a pair of stages is installed in each of the pre-processing unit 9 and the post-processing unit 11, but the number of stages is not limited to two. Three or more stages may be installed. Furthermore, the semiconductor substrate 1 can be replaced and processed with high productivity. Modifications 1 to 6 can also be applied to the second embodiment.

(Modification 7)
In the second embodiment, a pair of placement surfaces are installed on the rotary tables of the pre-processing unit 91 and the post-processing unit 94, respectively, but the number of placement surfaces is not limited to two. Three or more placement surfaces may be installed. Furthermore, the semiconductor substrate 1 can be replaced and processed with high productivity.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate as a workpiece | work, 9c, 11c, 91c, 94c ... Relay place, 9d, 11d, 91d, 94d ... Processing place, 27 ... 1st stage as a mounting base, 28 ... 2nd stage as a mounting base, 57 ... Droplet, 63 ... Third stage as mounting table, 64 ... Fourth stage as mounting table, 93, 96 ... Rotary table as mounting table, 93a ... First mounting surface as mounting place, 93b ... the second placement surface as the placement location, 96a ... the third placement surface as the placement location, 96b ... the fourth placement surface as the placement location.

Claims (7)

A drawing method for drawing a droplet by discharging droplets onto a workpiece,
A feeding process for moving the workpiece to a relay station;
Moving the workpiece from the relay location to a processing location, performing a pre-treatment to irradiate the workpiece with ultraviolet light to modify the surface state of the workpiece, and moving from the processing location to the relay location;
A material removal step of moving the workpiece from the relay location,
A drawing method, wherein at least a part of at least one of the material supply step and the material removal step and the pretreatment step are performed in parallel. The drawing method according to claim 1, wherein a plurality of mounting tables that place the workpiece and move between the relay place and the processing place are used.
In the material supply process, the work is supplied to the mounting table located at the relay place,
In the preprocessing step, the mounting table on which the unprocessed work is mounted is moved to the processing place, the preprocessing is performed on the unprocessed work, and the processing table on which the processed work is mounted. To the relay location,
In the material removal step, the work is removed from the mounting table located at the relay place. The drawing method according to claim 1,
A plurality of placement places for placing the workpiece, wherein the placement place moves between the relay place and the processing place,
In the material supply step, the workpiece is supplied to the above-described placement location located at the relay location,
In the pretreatment step, the above-described placement place where the unprocessed work is mounted is moved to the processing place, the pretreatment is performed on the unprocessed work, and the processed work is loaded. Move the location to the relay location,
In the material removal step, the work is removed from the placement place located at the relay place. A drawing method for drawing a droplet by discharging droplets onto a workpiece,
A feeding process for moving the workpiece to a relay station;
Moving the workpiece from the relay location to a processing location, performing post-processing to solidify or harden the droplets, and a post-processing step to move from the processing location to the relay location;
A material removal step of moving the workpiece from the relay location,
A drawing method, wherein at least a part of at least one of the material supply step and the material removal step and the post-processing step are performed in parallel. 5. The drawing method according to claim 4, wherein a plurality of mounting tables for mounting the work and moving between the relay place and the processing place are used.
In the material supply process, the work is supplied to the mounting table located at the relay place,
In the post-processing step, the mounting table on which the unprocessed workpiece is mounted is moved to the processing place, the post-processing is performed on the unprocessed workpiece, and the processed table is mounted on the mounting table. To the relay location,
In the material removal step, the work is removed from the mounting table located at the relay place. The drawing method according to claim 4,
A plurality of placement places for placing the workpiece, wherein the placement place moves between the relay place and the processing place,
In the material supply step, the workpiece is supplied to the above-described placement location located at the relay location,
In the post-processing step, the above-mentioned place where the unprocessed work is mounted is moved to the processing place, the post-processing is performed on the unprocessed work, and the processed work is mounted. Move the location to the relay location,
In the material removal step, the work is removed from the placement place located at the relay place. The drawing method according to claim 2, wherein:
The droplet includes a curing agent that is cured by ultraviolet rays,
The drawing method further comprising a coating step of discharging the droplet onto the workpiece and irradiating the landed droplet with ultraviolet rays.

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