JP2012187462A - Printing method and printing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a printing method and a printing apparatus for preventing the damage given to a medium during pretreatment, and for obtaining excellent printing quality.SOLUTION: The printing apparatus includes: a surface treatment section 9 which performs a surface treatment by irradiating an ultraviolet to a semiconductor device 3 molded with resin in an atmosphere that contains ozone; a discharge head which has a nozzle for discharging droplets of a liquid, that cures by an active light, to a surface of the semiconductor device 3; and an irradiation section for irradiating the active light to the droplets on the semiconductor device 3.

Description

  The present invention relates to a printing method and a printing apparatus.

  2. Description of the Related Art In recent years, a technique of applying predetermined information on a recording medium by applying the liquid on a recording medium using an ink jet method that discharges the functional liquid as droplets and solidifying the applied functional liquid has been adopted. Patent Document 1 below discloses a printing apparatus that uses an IC chip as a recording medium and prints predetermined information such as a manufacturing number and a manufacturing company on the IC chip.

  By the way, in the printing apparatus using the ink jet method as described above, in order to obtain good print quality, the adhesion of the droplets to the surface of the recording medium is important. Therefore, in the printing apparatus, it is conceivable to perform a pretreatment process for improving the adhesion of the droplets to the surface of the recording medium. For example, as shown in Patent Document 2 below, as such pretreatment, plasma treatment is used for pretreatment to modify the surface of the recording medium.

JP 2003-80687 A JP 2003-237217 A

However, the following problems exist in the conventional technology as described above.
When the IC chip is pre-processed using plasma processing, there is a possibility that the epoxy resin that molds the surface of the chip is denatured by being oxidized from the surface deep inside. In addition, the surface of the IC chip may be ashed and damaged.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a printing method and a printing apparatus that can prevent a medium from being damaged at the time of preprocessing and obtain a good print quality. .

  In order to solve the above-described problems, the printing method of the present invention performs surface treatment by irradiating a semiconductor device in which at least a part of the surface is molded with a resin containing epoxy with ultraviolet rays in an atmosphere containing ozone. A surface treatment step to be performed; a discharge step of discharging liquid droplets that are cured with actinic rays from a nozzle of an ejection head onto the surface of the semiconductor device; and an irradiation step of irradiating the droplets on the semiconductor device with the actinic rays And.

  According to the printing method of the present invention, since the surface treatment of the semiconductor device can be performed by irradiating ultraviolet rays in an ozone atmosphere, the surface is ashed as compared with the conventional plasma treatment, and the semiconductor device is not damaged. Surface treatment can be performed. In addition, it is possible to prevent the occurrence of a problem that a resin including, for example, epoxy provided on the surface of the semiconductor device is denatured by being oxidized from the surface to the inside by the surface treatment. Therefore, the adhesion between the liquid that is cured by actinic rays and the semiconductor device can be improved, and good print quality can be obtained.

In the printing method, in the surface treatment step, the wavelength of the ultraviolet light is preferably set to 260 nm or less.
According to this configuration, since the semiconductor device is irradiated with ultraviolet light having a wavelength of 260 nm or less, the bonding of the epoxy surface can be cut.

In the printing method, it is preferable that the semiconductor device is heated at 160 ° C. or higher and 190 ° C. or lower in the surface treatment step.
According to this configuration, since the semiconductor device is irradiated with ultraviolet rays while being heated in a range of 160 ° C. or higher and 190 ° C. or lower, the surface treatment can be performed satisfactorily even in a low concentration ozone atmosphere.

Moreover, in the said printing method, it is preferable to set the ozone concentration in the said atmosphere to 0.01 ppm or more in the said surface treatment process. The ozone concentration is desirably set to 1.0 ppm or more.
According to this configuration, since the ozone concentration is set in an optimum range, the above-described surface treatment can be performed satisfactorily.

  The printing apparatus of the present invention includes a surface treatment unit that performs surface treatment by irradiating ultraviolet rays in an atmosphere containing ozone to a semiconductor device in which at least a part of the surface is molded with a resin containing epoxy, An ejection head having a nozzle for ejecting liquid droplets that are cured with actinic rays on the surface of the semiconductor device, and an irradiation unit that irradiates the actinic rays to the droplets on the semiconductor device. .

  According to the printing apparatus of the present invention, the surface treatment unit can perform the surface treatment of the semiconductor device by irradiating ultraviolet rays in an ozone atmosphere. Therefore, the surface is ashed compared with the conventional plasma treatment, and the semiconductor device is damaged. The surface treatment can be performed without causing the surface treatment. In addition, it is possible to prevent the occurrence of a problem that the resin including epoxy provided on the surface of the semiconductor device is denatured by being oxidized from the surface to the inside by the surface treatment. Therefore, the adhesion between the liquid that is cured by actinic rays and the semiconductor device can be improved, and good print quality can be obtained.

In the printing apparatus, it is preferable that the surface treatment unit irradiates the semiconductor device with ultraviolet rays having a wavelength of 260 nm or less.
According to this configuration, since the semiconductor device is irradiated with ultraviolet light having a wavelength of 260 nm or less, the bonding of the epoxy surface can be cut.

Moreover, in the said printing apparatus, when the said surface treatment part irradiates the said ultraviolet-ray with respect to the said semiconductor device, it is preferable to have a heating part which heats the said semiconductor substrate at 160 degreeC or more and 190 degrees C or less.
According to this configuration, since the semiconductor device is irradiated with ultraviolet rays while being heated in a range of 160 ° C. or higher and 190 ° C. or lower, the surface treatment can be performed satisfactorily even in a low concentration ozone atmosphere.

(A) is a schematic plan view which shows a semiconductor substrate, (b) is a schematic plan view which shows a droplet discharge device. The schematic diagram which shows a supply part. The schematic perspective view which shows the structure of a pre-processing part. The figure for demonstrating the relationship between the wavelength of an ultraviolet-ray, and the adhesiveness of a droplet. (A) is a schematic perspective view which shows the structure of an application part, (b) is a model side view which shows a carriage. (A) is a schematic plan view showing a head unit, and (b) is a schematic cross-sectional view of a main part for explaining the structure of a droplet discharge head. The schematic diagram which shows a storage part. The schematic perspective view which shows the structure of a conveyance part. 6 is a flowchart for illustrating a printing method.

Hereinafter, embodiments of a printing apparatus according to the present invention will be described with reference to the drawings.
The following embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. Moreover, in the following drawings, in order to make each configuration easy to understand, the actual structure is different from the scale and number of each structure.

  In the present embodiment, a characteristic printing apparatus of the present invention and an example of a printing method for printing by discharging droplets using the printing apparatus will be described with reference to FIGS.

(Semiconductor substrate)
First, a semiconductor substrate which is an example of an object to be drawn (printed) using a printing apparatus will be described.
FIG. 1A is a schematic plan view showing a semiconductor substrate. As shown in FIG. 1A, a semiconductor substrate 1 as a base material includes a substrate 2. The substrate 2 only needs to have heat resistance so that the semiconductor device 3 can be mounted. As the substrate 2, a glass epoxy substrate, a paper phenol substrate, a paper epoxy substrate, or the like can be used.

  A semiconductor device 3 is mounted on the substrate 2. The semiconductor device 3 formed on the substrate 2 in the semiconductor substrate 1 is covered with a mold layer made of a resin containing epoxy. On the semiconductor device 3, marks (print pattern, predetermined pattern) such as a company name mark 4, a model code 5, and a production number 6 are drawn. These marks are drawn by the printing apparatus. Therefore, these marks are drawn on a mold layer formed on the surface of the semiconductor device 3.

(Printer)
FIG. 1B is a schematic plan view showing the printing apparatus.
As shown in FIG. 1B, the printing apparatus 7 mainly includes a supply unit 8, a pretreatment unit (surface treatment unit) 9, an application unit (printing unit) 10, a cooling unit 11, a storage unit 12, a conveyance unit 13, and the like. The control unit 14 is configured. The printing apparatus 7 is arranged in the order of the supply unit 8, the preprocessing unit 9, the application unit 10, the cooling unit 11, the storage unit 12, and the control unit 14 in the clockwise direction with the conveyance unit 13 as the center. A supply unit 8 is arranged next to the control unit 14. A direction in which the supply unit 8, the control unit 14, and the storage unit 12 are arranged is an X direction. The direction orthogonal to the X direction is defined as the Y direction, and the coating unit 10, the transport unit 13, and the control unit 14 are arranged side by side in the Y direction. The vertical direction is the Z direction.

  The supply unit 8 includes a storage container in which a plurality of semiconductor substrates 1 are stored. The supply unit 8 includes a relay location 8a, and supplies the semiconductor substrate 1 from the storage container to the relay location 8a.

  The pretreatment unit 9 has a function of modifying the surface of the semiconductor device 3 while heating. The pretreatment unit 9 adjusts the spread of the ejected droplets and the adhesion of the marks to be printed. The pre-processing unit 9 includes a first relay location 9a and a second relay location 9b, and takes the semiconductor substrate 1 before processing from the first relay location 9a or the second relay location 9b to modify the surface. Thereafter, the preprocessing unit 9 moves the processed semiconductor substrate 1 to the first relay location 9a or the second relay location 9b, and makes the semiconductor substrate 1 stand by. The first relay location 9a and the second relay location 9b are collectively referred to as a relay location 9c. Then, when the pre-processing is performed inside the pre-processing unit 9, a place where the semiconductor substrate 1 is located is set as a processing place 9d.

  The cooling unit 11 has a function of cooling the semiconductor substrate 1 that has been heated and surface-modified in the pretreatment unit 9. The cooling unit 11 includes processing places 11 a and 11 b that hold and cool the semiconductor substrate 1. The processing places 11a and 11b are collectively referred to as a processing place 11c as appropriate.

  The application unit 10 has a function of drawing (printing) a mark by discharging droplets onto the semiconductor device 3 and solidifying or curing the drawn mark. The application unit 10 includes a relay location 10a, and performs drawing processing and curing processing by moving the semiconductor substrate 1 before drawing from the relay location 10a. Thereafter, the coating unit 10 moves the drawn semiconductor substrate 1 to the relay location 10a, and makes the semiconductor substrate 1 stand by.

  The storage unit 12 includes a storage container that can store a plurality of semiconductor substrates 1. The storage unit 12 includes a relay location 12a, and stores the semiconductor substrate 1 from the relay location 12a into the storage container. The operator carries out the storage container in which the semiconductor substrate 1 is stored from the printing apparatus 7.

  A transport unit 13 is disposed at a central location of the printing apparatus 7. The transport unit 13 is a scalar robot having two arms. A grip portion 13 a that grips the semiconductor substrate 1 is provided at the tip of the arm portion. The relay locations 8a, 9c, 10a, 11c, and 12a are located within the movement range 13b of the grip portion 13a. Accordingly, the gripping portion 13a can move the semiconductor substrate 1 between the relay locations 8a, 9c, 10a, 11c, and 12a. The control unit 14 is a device that controls the overall operation of the printing apparatus 7 and manages the operation status of each unit of the printing apparatus 7. Then, an instruction signal for moving the semiconductor substrate 1 is output to the transport unit 13. Thereby, the semiconductor substrate 1 is drawn by passing through each part sequentially.

Details of each part will be described below.
(Supply section)
FIG. 2A is a schematic front view showing the supply unit, and FIGS. 2B and 2C are schematic side views showing the supply unit. As shown in FIGS. 2A and 2B, the supply unit 8 includes a base 15. An elevating device 16 is installed inside the base 15. The elevating device 16 includes a linear motion mechanism that operates in the Z direction. As this linear motion mechanism, a mechanism such as a combination of a ball screw and a rotary motor or a combination of a hydraulic cylinder and an oil pump can be used. In this embodiment, for example, a mechanism using a ball screw and a step motor is employed. An elevating plate 17 is connected to the elevating device 16 on the upper side of the base 15. The elevating plate 17 can be moved up and down by a predetermined moving amount by the elevating device 16.

  A rectangular parallelepiped storage container 18 is installed on the elevating plate 17, and a plurality of semiconductor substrates 1 are stored in the storage container 18. The storage container 18 has openings 18a on both sides in the Y direction, and the semiconductor substrate 1 can be taken in and out from the openings 18a. Convex rails 18c are formed inside the side surfaces 18b located on both sides in the X direction of the storage container 18, and the rails 18c are arranged extending in the Y direction. A plurality of rails 18c are arranged at equal intervals in the Z direction. By inserting the semiconductor substrate 1 along the rail 18c from the Y direction or from the -Y direction, the semiconductor substrate 1 is arranged and stored in the Z direction.

  On the Y direction side of the base 15, a substrate drawing portion 22 and a relay stand 23 are installed via a support member 21. A relay stand 23 is disposed on the substrate drawing portion 22 at a location on the Y direction side of the storage container 18. The substrate drawing portion 22 includes an arm portion 22a that expands and contracts in the Y direction and a linear motion mechanism that drives the arm portion 22a. This linear motion mechanism is not particularly limited as long as it is a mechanism that moves linearly. In this embodiment, for example, an air cylinder that operates with compressed air is employed. A claw portion 22b bent into a substantially rectangular shape is installed at one end of the arm portion 22a, and the tip of the claw portion 22b is formed in parallel with the arm portion 22a.

  The substrate pull-out portion 22 extends the arm portion 22 a, so that the arm portion 22 a penetrates the storage container 18. Then, the claw portion 22 b moves to the −Y direction side of the storage container 18. Next, after the elevating device 16 moves down the semiconductor substrate 1, the substrate drawing portion 22 contracts the arm portion 22a. At this time, the claw portion 22 b moves while pushing one end of the semiconductor substrate 1.

  As a result, as shown in FIG. 2C, the semiconductor substrate 1 is moved from the storage container 18 onto the relay stand 23. The relay base 23 is formed with a recess having a width substantially the same as the width of the semiconductor substrate 1 in the X direction, and the semiconductor substrate 1 moves along the recess. And the position of the X direction of the semiconductor substrate 1 is determined by this recessed part. The position of the semiconductor substrate 1 in the Y direction is determined by the location where the semiconductor substrate 1 is stopped by being pushed by the claw portion 22b. On the relay stand 23 is a relay place 8a, and the semiconductor substrate 1 stands by at a predetermined place of the relay place 8a. When the semiconductor substrate 1 is waiting at the relay location 8 a of the supply unit 8, the transport unit 13 moves the gripping unit 13 a to a location facing the semiconductor substrate 1 to grip and move the semiconductor substrate 1.

  After the semiconductor substrate 1 is moved from the relay table 23 by the transfer unit 13, the substrate drawing unit 22 extends the arm portion 22a. Next, the lifting device 16 lowers the storage container 18, and the substrate drawing portion 22 moves the semiconductor substrate 1 from the storage container 18 onto the relay stand 23. In this way, the supply unit 8 sequentially moves the semiconductor substrate 1 from the storage container 18 onto the relay stand 23. After all the semiconductor substrates 1 in the storage container 18 are moved onto the relay stand 23, the operator replaces the empty storage container 18 with the storage container 18 in which the semiconductor substrate 1 is stored. Thereby, the semiconductor substrate 1 can be supplied to the supply unit 8.

(Pre-processing section)
FIG. 3 is a schematic perspective view showing the configuration of the preprocessing unit. As shown in FIG. 3A, the pretreatment unit 9 includes a base 24, and a pair of first guide rails 25 and second guide rails 26 extending in the X direction are arranged on the base 24. is set up. A first stage 27 as a mounting table that reciprocates in the X direction along the first guide rail 25 is installed on the first guide rail 25, and along the second guide rail 26 on the second guide rail 26. A second stage 28 is placed as a mounting table that reciprocates in the X direction. The first stage 27 and the second stage 28 include a linear motion mechanism and can reciprocate. As this linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the lifting device 16 can be used.

  A placement surface 27a is installed on the upper surface of the first stage 27, and a suction-type chuck mechanism is formed on the placement surface 27a. After the transport unit 13 places the semiconductor substrate 1 on the placement surface 27a, the pretreatment unit 9 can fix the semiconductor substrate 1 to the placement surface 27a by operating the chuck mechanism. Similarly, a mounting surface 28a is installed on the upper surface of the second stage 28, and a suction chuck mechanism is formed on the mounting surface 28a. After the transport unit 13 places the semiconductor substrate 1 on the placement surface 28a, the pretreatment unit 9 can fix the semiconductor substrate 1 to the placement surface 28a by operating the chuck mechanism.

  The first stage 27 includes a heating device (heating unit) 27 </ b> H, and heats the semiconductor substrate 1 placed on the placement surface 27 a to a predetermined temperature under the control of the control unit 14. Similarly, the second stage 28 includes a heating device (heating unit) 28H, and heats the semiconductor substrate 1 placed on the placement surface 28a to a predetermined temperature under the control of the control unit 14.

  The place of the placement surface 27a when the first stage 27 is located on the X direction side is the first relay place 9a, and the place of the placement surface 28a when the second stage 28 is located in the X direction is the first place. 2 relay place 9b. The relay location 9c, which is the first relay location 9a and the second relay location 9b, is located within the operating range of the grip portion 13a, and the placement surface 27a and the placement surface 28a are exposed at the relay location 9c. Accordingly, the transport unit 13 can easily place the semiconductor substrate 1 on the placement surface 27a and the placement surface 28a. After the pretreatment is performed on the semiconductor substrate 1, the semiconductor substrate 1 stands by on the placement surface 27a located at the first relay location 9a or the placement surface 28a located at the second relay location 9b. Therefore, the grip part 13a of the transport part 13 can easily grip the semiconductor substrate 1 and move it.

  A flat plate-like support portion 29 is erected in the −X direction of the base 24. A guide rail 30 extending in the Y direction is installed on the upper side of the surface of the support portion 29 on the X direction side. A carriage 31 that moves along the guide rail 30 is installed at a location facing the guide rail 30. The carriage 31 includes a linear motion mechanism and can reciprocate. As this linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the lifting device 16 can be used.

  On both sides of the carriage 31 in the moving direction, ozone generators 35 are attached. The ozone generation part 35 is for generating ozone in the exterior part 33 of the pre-processing part 9 mentioned later. As the ozone generator 35, any one of a discharge method, an electrolysis method, and a UV irradiation method can be adopted. Note that the ozone generator 35 may be provided only on one side in the moving direction of the carriage 31.

  In the discharge method, an oxygen-containing gas is allowed to flow between a pair of electrodes arranged in a parallel plate shape or a coaxial cylindrical shape, and an alternating high voltage is applied to cause discharge in the oxygen-containing gas to generate ozone. Is possible. Alternatively, the surface of the planar electrode is covered with a dielectric material such as ceramics, a linear electrode is arranged on the surface of the dielectric material, and an AC high voltage is applied between the flat electrode and the linear electrode to form the dielectric material. It is also possible to generate ozone (surface discharge) on the surface of the glass to generate ozone.

  The electrolytic method is to place an electrolyte membrane in water, place a pair of electrodes, apply a DC voltage between both electrodes to cause electrolysis of water, and generate ozone simultaneously with oxygen on the oxygen generation side. Is possible. The electrolysis-type ozone generator 35 has a configuration using, for example, porous titanium having a platinum catalyst layer as a cathode, porous titanium having a lead dioxide catalyst layer as an anode, and a perfluorosulfonic acid cation exchange membrane as an electrolyte membrane. Become. According to this configuration, it is possible to generate high concentration ozone of 20% by weight or more.

  The UV irradiation method is a method of generating ozone by applying ultraviolet rays to air or the like. Therefore, the UV irradiation type ozone generator 35 includes an irradiation device that irradiates ultraviolet rays.

  Based on this configuration, the ozone generator 35 can generate ozone in the exterior part 33 of the pretreatment part 9, thereby making the atmosphere X in the exterior part 33 an ozone-containing atmosphere. A processing unit 32 is installed on the base 24 side of the carriage 31. An example of the processing unit 32 is a low-pressure mercury lamp that emits ultraviolet light. The liquid repellency of the surface of the semiconductor substrate 1 can be modified by irradiating the semiconductor substrate 1 with ultraviolet light.

  Further, the pre-processing unit 9 reciprocates the carriage 31 while irradiating the processing unit 32 with ultraviolet rays while the semiconductor substrate 1 is heated by the heating devices 27H and 28H. As a result, the pretreatment unit 9 can irradiate ultraviolet rays over a wide area of the treatment place 9d.

  The pretreatment unit 9 is entirely covered by the exterior unit 33. Inside the exterior part 33, a door part 34 that can move up and down is installed. Then, as shown in FIG. 3B, after the first stage 27 or the second stage 28 has moved to a position facing the carriage 31, the door 34 is lowered. Thereby, the ultraviolet rays irradiated by the processing unit 32 are prevented from leaking out of the preprocessing unit 9.

  When the mounting surface 27a or the mounting surface 28a is located at the relay place 9c, the transport unit 13 supplies the semiconductor substrate 1 to the mounting surface 27a and the mounting surface 28a. The preprocessing unit 9 performs the preprocessing by moving the first stage 27 or the second stage 28 on which the semiconductor substrate 1 is placed to the processing place 9d. After the preprocessing is completed, the preprocessing unit 9 moves the first stage 27 or the second stage 28 to the relay location 9c. Subsequently, the transport unit 13 removes the semiconductor substrate 1 from the placement surface 27a or the placement surface 28a.

  Here, it is preferable that the ozone generation unit 35 generates ozone so that the ozone concentration of the atmosphere X in the exterior portion 33 is 0.01 ppm or more, and further generates ozone so as to be 1.00 ppm or more. Is desirable. Further, the processing unit 32 sets the wavelength of the irradiated ultraviolet light to 260 nm or less.

  Further, the temperature at which the heating devices 27H and 28H heat the semiconductor substrate 1 can effectively modify the surface of the semiconductor substrate 1, and is preferably equal to or lower than the heat-resistant temperature of the semiconductor substrate 1. In the embodiment, the semiconductor substrate 1 is set to 180 ° C., for example, so as to have a temperature in the range of 160 ° C. to 190 ° C.

  Here, the relationship between the wavelength of the ultraviolet rays irradiated by the processing unit 32 in the preprocessing unit 9 and the adhesion between the droplet and the semiconductor device 3 depending on the presence or absence of the ozone atmosphere will be described with reference to FIG. In FIG. 4, a circle indicates that sufficient adhesion is obtained between the droplet and the semiconductor device 3, and a triangle indicates that slight adhesion is obtained between the droplet and the semiconductor device 3. However, the x mark indicates that adhesion between the droplet and the semiconductor device 3 was not obtained.

As shown in FIG. 4, when the wavelength of ultraviolet rays is 254 nm or 185 nm, which is 260 nm or less in an ozone atmosphere, the droplets can adhere to the semiconductor device 3 satisfactorily.
On the other hand, in the case of no ozone, the droplets could not be satisfactorily adhered to the semiconductor substrate 1 even when the wavelength of ultraviolet rays was 254 nm. Even in the absence of ozone, the droplet can be brought into close contact with the semiconductor device 3 when the wavelength of the ultraviolet ray is 185 nm. This is considered to be because ozone was generated by irradiation of ultraviolet rays when the wavelength of ultraviolet rays was 185 nm.

  According to the pretreatment unit 9 according to the present embodiment, the chemical bond of the epoxy resin in the surface layer of the semiconductor device 3 is improved as described later by irradiating the surface of the semiconductor substrate 1 with ultraviolet rays having a wavelength in an ozone atmosphere. A cutting process is performed, and the adhesion between the droplet and the semiconductor substrate 1 can be improved in the droplet discharge step. In addition, the pre-processing unit 9 can perform the above-described processing (processing for cutting a chemical bond of an epoxy resin) satisfactorily even in a low-concentration ozone atmosphere by setting the semiconductor substrate 1 in a heated state. It has become.

(Cooling section)
The cooling unit 11 includes cooling plates 110 a and 110 b such as heat sinks, which are provided at the processing locations 11 a and 11 b, respectively, and whose upper surfaces are suction holding surfaces of the semiconductor substrate 1.
The processing locations 11a and 11b (cooling plates 110a and 110b) are located within the operating range of the gripping portion 13a, and the cooling plates 110a and 110b are exposed at the processing locations 11a and 11b. Therefore, the transport unit 13 can easily place the semiconductor substrate 1 on the cooling plates 110a and 110b. After the semiconductor substrate 1 is cooled, the semiconductor substrate 1 stands by on the cooling plate 110a positioned at the processing location 11a or the cooling plate 110a positioned at the processing location 11b. Therefore, the gripping part 13a of the transport part 13 can easily grip and move the semiconductor substrate 1.

(Applying part)
Next, the coating unit 10 that forms marks by discharging droplets onto the semiconductor substrate 1 will be described with reference to FIGS. There are various types of apparatuses for ejecting droplets, and an apparatus using an ink jet method is preferable. The ink jet method is suitable for microfabrication because it can discharge minute droplets.

  FIG. 5A is a schematic perspective view showing the configuration of the application unit. Liquid droplets are ejected onto the semiconductor substrate 1 by the application unit 10. As shown to Fig.5 (a), the application part 10 is provided with the base 37 formed in the rectangular parallelepiped shape. The direction in which the droplet discharge head and the object to be discharged move relative to each other when discharging droplets is defined as a main scanning direction. The direction orthogonal to the main scanning direction is defined as the sub scanning direction. The sub-scanning direction is a direction in which the droplet discharge head and the discharge target are relatively moved when a line feed is made. In the present embodiment, the X direction is the main scanning direction, and the Y direction is the sub scanning direction.

  On the upper surface 37a of the base 37, a pair of guide rails 38 extending in the Y direction are provided so as to protrude over the entire width in the Y direction. A stage 39 having a linear motion mechanism (not shown) corresponding to the pair of guide rails 38 is attached to the upper side of the base 37. As the linear motion mechanism of the stage 39, a linear motor, a screw type linear motion mechanism, or the like can be used. In this embodiment, for example, a linear motor is employed. Then, it moves forward or backward along the Y direction at a predetermined speed. Repeating forward and backward movement is called scanning movement. Further, a sub-scanning position detection device 40 is disposed on the upper surface 37 a of the base 37 in parallel with the guide rail 38, and the position of the stage 39 is detected by the sub-scanning position detection device 40.

  A placement surface 41 is formed on the upper surface of the stage 39, and a suction-type substrate chuck mechanism (not shown) is provided on the placement surface 41. After the semiconductor substrate 1 is placed on the placement surface 41, the semiconductor substrate 1 is fixed to the placement surface 41 by a substrate chuck mechanism.

  The place of the placement surface 41 when the stage 39 is positioned in the −Y direction is the relay place 10a. The placement surface 41 is installed so as to be exposed within the operating range of the gripping portion 13a. Therefore, the transport unit 13 can easily place the semiconductor substrate 1 on the placement surface 41. After application | coating is performed to the semiconductor substrate 1, the semiconductor substrate 1 waits on the mounting surface 41 which is the relay place 10a. Therefore, the grip part 13a of the transport part 13 can easily grip the semiconductor substrate 1 and move it.

  A pair of support bases 42 are erected on both sides of the base 37 in the X direction, and guide members 43 extending in the X direction are installed on the pair of support bases 42. A guide rail 44 extending in the X direction is provided below the guide member 43 so as to protrude over the entire width in the X direction. A carriage (moving means) 45 movably attached along the guide rail 44 is formed in a substantially rectangular parallelepiped shape. The carriage 45 includes a linear motion mechanism. As the linear motion mechanism, for example, a mechanism similar to the linear motion mechanism included in the stage 39 can be used. Then, the carriage 45 scans and moves along the X direction. A main scanning position detector 46 is disposed between the guide member 43 and the carriage 45, and the position of the carriage 45 is measured. Specifically, in this embodiment, a linear encoder is used as the main scanning position detection device 46. The main scanning position detection device 46 is electrically connected to the control unit 14 and transmits a measurement result to the control unit 14. A head unit 47 is installed on the lower side of the carriage 45, and a droplet discharge head (not shown) is projected on the surface of the head unit 47 on the stage 39 side.

  FIG. 5B is a schematic side view showing the carriage. As shown in FIG. 5B, a head unit 47 and a curing unit (irradiation unit) 48 as a pair of irradiation units are disposed on the semiconductor substrate 1 side of the carriage 45. A liquid droplet ejection head (ejection head) 49 for ejecting liquid droplets is provided on the side of the semiconductor substrate 1 of the head unit 47.

  An irradiating device for irradiating ultraviolet rays that cure the discharged droplets is disposed inside the curing unit 48. The curing unit 48 is disposed on both sides of the head unit 47 in the main scanning direction (relative movement direction). The irradiation device includes a light emitting unit and a heat radiating plate. A number of LED (Light Emitting Diode) elements are arranged in the light emitting unit. This LED element is an element that emits ultraviolet light, which is ultraviolet light, upon receiving power.

  A storage tank 50 is arranged on the upper side of the carriage 45 in the drawing, and the functional liquid is stored in the storage tank 50. The droplet discharge head 49 and the storage tank 50 are connected by a tube (not shown), and the functional liquid in the storage tank 50 is supplied to the droplet discharge head 49 through the tube.

  The functional liquid is mainly composed of a resin material, a photopolymerization initiator as a curing agent, a solvent or a dispersion medium. A functional liquid having an inherent function can be formed by adding a coloring material such as a pigment or a dye or a functional material such as a lyophilic or liquid repellent surface modifying material to the main material. In this embodiment, for example, a white pigment is added. The functional liquid resin material is a material for forming a resin film. The resin material is not particularly limited as long as the material is liquid at normal temperature and becomes a polymer by polymerization. Furthermore, a resin material having a low viscosity is preferable, and it is preferably in the form of an oligomer. A monomer form is more preferable. The photopolymerization initiator is an additive that acts on a crosslinkable group of the polymer to advance the crosslinking reaction. For example, benzyldimethyl ketal or the like can be used as the photopolymerization initiator. The solvent or the dispersion medium adjusts the viscosity of the resin material. By setting the viscosity at which the functional liquid can be easily discharged from the droplet discharge head, the droplet discharge head can stably discharge the functional liquid.

  FIG. 6A is a schematic plan view showing the head unit. As shown in FIG. 6A, in the head unit 47, two droplet discharge heads 49 constituting the first and second discharge heads are arranged with a space in the sub-scanning direction, and each droplet discharge head is arranged. Nozzle plates 51 are arranged on the surface 49. A plurality of nozzles 52 are arranged in each nozzle plate 51. In the present embodiment, each nozzle plate 51 is provided with one nozzle row 60 in which 15 nozzles 52 are arranged along the sub-scanning direction. In addition, the two nozzle rows 60 are arranged in a straight line along the Y direction and at equal intervals with the curing units 48 on both sides in the X direction.

  In each droplet discharge head 49, the nozzle 52 located at both ends of the nozzle row 60 does not tend to be unstable in droplet discharge characteristics, and thus is not used for the droplet discharge process. That is, in this embodiment, the actual nozzle row 60 </ b> A that actually ejects droplets to the semiconductor substrate 1 is formed by the 13 nozzles 52 excluding the nozzles 52 at both ends.

Here, when the length of each actual nozzle row 60A in the sub-scanning direction is LN and the distance in the sub-scanning direction between the adjacent nozzle discharge heads 49 between the actual nozzle rows 60A is LH, the adjacent droplet discharge heads. 49 are arranged in a positional relationship satisfying the following expression.
LH = n × LN (n is a positive integer) (1)
In the present embodiment, two droplet discharge heads 49 are arranged along the Y direction with a positional relationship of n = 1, that is, LH = LN.

  An irradiation port 48 a is formed on the lower surface of the curing unit 48. The irradiation port 48 a is provided with an irradiation range having a length equal to or longer than the sum of the lengths of the ejection heads 49 and 49 in the Y direction and the distance between the ejection heads 49 and 49. Then, ultraviolet light emitted from the irradiation device is irradiated toward the semiconductor substrate 1 from the irradiation port 48a.

  FIG. 6B is a schematic cross-sectional view of a main part for explaining the structure of the droplet discharge head. As shown in FIG. 6B, the droplet discharge head 49 includes a nozzle plate 51, and a nozzle 52 is formed on the nozzle plate 51. A cavity 53 communicating with the nozzle 52 is formed at a position above the nozzle plate 51 and facing the nozzle 52. A functional liquid (liquid) 54 is supplied to the cavity 53 of the droplet discharge head 49.

  A vibration plate 55 that vibrates in the vertical direction and expands or contracts the volume in the cavity 53 is installed above the cavity 53. A piezoelectric element 56 that extends in the vertical direction and vibrates the vibration plate 55 is disposed at a location facing the cavity 53 on the upper side of the vibration plate 55. The piezoelectric element 56 expands and contracts in the vertical direction to pressurize and vibrate the diaphragm 55, and the diaphragm 55 pressurizes the cavity 53 by expanding and reducing the volume in the cavity 53. As a result, the pressure in the cavity 53 varies, and the functional liquid 54 supplied into the cavity 53 is discharged through the nozzle 52.

  When the droplet discharge head 49 receives a nozzle drive signal for controlling and driving the piezoelectric element 56, the piezoelectric element 56 expands and the diaphragm 55 reduces the volume in the cavity 53. As a result, the functional liquid 54 corresponding to the reduced volume is discharged as droplets 57 from the nozzles 52 of the droplet discharge head 49. The semiconductor substrate 1 coated with the functional liquid 54 is irradiated with ultraviolet light from the irradiation port 48a so that the functional liquid 54 containing a curing agent is solidified or cured.

(Storage section)
FIG. 7A is a schematic front view showing the storage portion, and FIG. 7B and FIG. 7C are schematic side views showing the storage portion. As shown in FIGS. 7A and 7B, the storage unit 12 includes a base 74. An elevating device 75 is installed inside the base 74. As the lifting device 75, the same device as the lifting device 16 installed in the supply unit 8 can be used. A lifting plate 76 is connected to the lifting device 75 on the upper side of the base 74. The lifting plate 76 is lifted and lowered by the lifting device 75. A rectangular parallelepiped storage container 18 is installed on the lifting plate 76, and the semiconductor substrate 1 is stored in the storage container 18. The same container as the storage container 18 installed in the supply unit 8 is used as the storage container 18.

  A substrate extruding portion 78 and a relay stand 79 are installed on the Y direction side of the base 74 via a support member 77. A relay stand 79 is disposed on the substrate push-out portion 78 at a location on the Y direction side of the storage container 18. The board pushing part 78 includes an arm part 78a that moves in the Y direction and a linear motion mechanism that drives the arm part 78a. This linear motion mechanism is not particularly limited as long as it is a mechanism that moves linearly. In this embodiment, for example, an air cylinder that operates with compressed air is employed. The semiconductor substrate 1 is placed on the relay stand 79, and the arm portion 78 a can come into contact with the center of one end of the semiconductor substrate 1 on the Y direction side.

  The substrate pushing part 78 moves the arm part 78a in the -Y direction, so that the arm part 78a moves the semiconductor substrate 1 in the -Y direction. The relay stand 79 is formed with a recess having a width substantially the same as the width of the semiconductor substrate 1 in the X direction, and the semiconductor substrate 1 moves along the recess. And the position of the X direction of the semiconductor substrate 1 is determined by this recessed part. As a result, the semiconductor substrate 1 is moved into the storage container 18 as shown in FIG. A rail 18 c is formed in the storage container 18, and the rail 18 c is positioned on an extension line of a recess formed in the relay stand 79. Then, the semiconductor substrate 1 is moved along the rails 18 c by the substrate pushing part 78. Thereby, the semiconductor substrate 1 is stored in the storage container 18 with high quality.

  After the transport unit 13 moves the semiconductor substrate 1 onto the relay stand 79, the lifting device 75 raises the storage container 18. And the board | substrate extrusion part 78 drives the arm part 78a, and moves the semiconductor substrate 1 in the storage container 18. FIG. In this way, the storage unit 12 stores the semiconductor substrate 1 in the storage container 18. After the predetermined number of semiconductor substrates 1 are stored in the storage container 18, the operator replaces the storage container 18 in which the semiconductor substrate 1 is stored with the empty storage container 18. Thus, the operator can carry the plurality of semiconductor substrates 1 together to the next process.

  The storage unit 12 has a relay place 12a on which the semiconductor substrate 1 to be stored is placed. The transport unit 13 can store the semiconductor substrate 1 in the storage container 18 in cooperation with the storage unit 12 only by placing the semiconductor substrate 1 on the relay location 12a.

(Transport section)
Next, the conveyance part 13 which conveys the semiconductor substrate 1 is demonstrated according to FIG. FIG. 8 is a schematic perspective view illustrating the configuration of the transport unit. As shown in FIG. 8, the conveyance part 13 is provided with the base 82 formed in flat form. A support base 83 is disposed on the base 82. A cavity is formed inside the support base 83, and a rotation mechanism 83a including a motor, an angle detector, a speed reducer, and the like is installed in the cavity. The output shaft of the motor is connected to the speed reducer, and the output shaft of the speed reducer is connected to the first arm portion 84 disposed on the upper side of the support base 83. In addition, an angle detector is installed in connection with the motor output shaft, and the angle detector detects the rotation angle of the motor output shaft. Thereby, the rotation mechanism 83a can detect the rotation angle of the first arm portion 84 and rotate it to a desired angle.

  A rotation mechanism 85 is installed on the first arm portion 84 at the end opposite to the support base 83. The rotation mechanism 85 includes a motor, an angle detector, a speed reducer, and the like, and has the same function as the rotation mechanism installed in the support base 83. The output shaft of the rotation mechanism 85 is connected to the second arm portion 86. Accordingly, the rotation mechanism 85 can detect the rotation angle of the second arm portion 86 and rotate it to a desired angle.

  On the second arm portion 86, an elevating device 87 is disposed at the end opposite to the rotation mechanism 85. The elevating device 87 includes a linear motion mechanism and can be expanded and contracted by driving the linear motion mechanism. For this linear motion mechanism, for example, a mechanism similar to the lifting device 16 of the supply unit 8 can be used. A rotating device 88 is disposed below the lifting device 87.

  The rotation device 88 only needs to be able to control the rotation angle, and can be configured by combining various motors and a rotation angle sensor. In addition, a step motor capable of rotating at a predetermined rotation angle can be used. In this embodiment, for example, a step motor is employed. Further, a speed reducer may be arranged. It can be rotated at a finer angle.

  A gripping portion 13a is arranged on the lower side of the rotating device 88 in the drawing. The grip 13 a is connected to the rotation shaft of the rotation device 88. Therefore, the conveyance unit 13 can rotate the gripping unit 13 a by driving the rotating device 88. Furthermore, the conveyance part 13 can raise / lower the holding part 13a by driving the raising / lowering apparatus 87. FIG.

  The gripping portion 13a has four linear finger portions 13c, and a suction mechanism that sucks and sucks the semiconductor substrate 1 is formed at the tip of the finger portion 13c. And the holding part 13a can hold | grip the semiconductor substrate 1 by operating this adsorption | suction mechanism.

  A control device 89 is installed on the −Y direction side of the base 82. The control device 89 includes a central processing unit, a storage unit, an interface, an actuator drive circuit, an input device, a display device, and the like. The actuator drive circuit is a circuit that drives the rotation mechanism 83a, the rotation mechanism 85, the lifting device 87, the rotation device 88, and the suction mechanism of the grip portion 13a. These devices and circuits are connected to the central processing unit via an interface. In addition, an angle detector is connected to the central processing unit via an interface. The storage unit stores program software indicating operation procedures for controlling the transport unit 13 and data used for control. The central processing unit is a device that controls the transport unit 13 in accordance with program software. The control device 89 receives the output of the detector arranged in the transport unit 13 and detects the position and posture of the grip unit 13a. And the control apparatus 89 performs the control which drives the rotation mechanism 83a and the rotation mechanism 85, and moves the holding part 13a to a predetermined position.

(Printing method)
Next, a printing method using the above-described printing apparatus 7 will be described with reference to FIG. FIG. 9 is a flowchart for illustrating a printing method.
As shown in the flowchart of FIG. 9, the printing method includes a carry-in process S <b> 1 for carrying in the semiconductor substrate 1 from the storage container 18, a pre-treatment process S <b> 2 for pre-treating the surface of the semiconductor substrate 1 carried in, Cooling step S3 for cooling the semiconductor substrate 1 whose temperature has increased in step S2, printing step S4 for drawing and printing various marks on the cooled semiconductor substrate 1, and post-processing for the semiconductor substrate 1 printed with various marks The post-processing step S5 to be performed and the storage step S6 for storing the post-processed semiconductor substrate 1 in the storage container 18 are mainly configured.

Among the steps described above, the steps from the pretreatment step S2 to the printing step S4 are the characteristic portions of the present invention. Therefore, the characteristic portions will be described in the following description.
In the preprocessing step S2, in the preprocessing unit 9, one of the first stage 27 and the second stage 28 is located at the relay location 9c. The conveyance unit 13 moves the gripping unit 13a to a location facing the stage located at the relay location 9c. Subsequently, the transport unit 13 lowers the gripping unit 13a and then releases the suction of the semiconductor substrate 1, thereby placing the semiconductor substrate 1 on the first stage 27 or the second stage 28 located at the relay location 9c. To do. As a result, the semiconductor substrate 1 is placed on the first stage 27 located at the relay location 9c (see FIG. 3B). Alternatively, the semiconductor substrate 1 is placed on the second stage 28 located at the relay location 9c (see FIG. 3A).

  The first stage 27 and the second stage 28 are preheated by heating devices 27H and 28H, and the semiconductor substrate 1 placed on the first stage 27 or the second stage 28 is immediately heated to a predetermined temperature (180 ° C.). Is done.

  Further, when the transfer unit 13 moves the semiconductor substrate 1 onto the first stage 27, the pretreatment of the semiconductor substrate 1 on the second stage 28 is performed at the processing place 9 d inside the pretreatment unit 9. Then, after the pretreatment of the semiconductor substrate 1 on the second stage 28 is completed, the second stage 28 moves the semiconductor substrate 1 to the second relay location 9b. Next, the preprocessing unit 9 drives the first stage 27 to move the semiconductor substrate 1 placed on the first relay location 9 a to the processing location 9 d facing the carriage 31. Thereby, the pretreatment of the semiconductor substrate 1 on the first stage 27 can be started immediately after the pretreatment of the semiconductor substrate 1 on the second stage 28 is completed.

Subsequently, in the preprocessing unit 9, the semiconductor device 3 mounted on the semiconductor substrate 1 is irradiated with ultraviolet rays.
In the present embodiment, when driving the pretreatment unit 9, the atmosphere X in the exterior unit 33 is changed to an ozone atmosphere having an ozone concentration of 0.01 ppm or more by driving the ozone generation unit 35. In addition, the wavelength of the ultraviolet light applied to the semiconductor substrate 1 is set to 260 nm or less.

  Thereby, the chemical bond of the epoxy resin (organic irradiation object) in the surface layer of the semiconductor device 3 is cut, and the active oxygen separated from the ozone generated in the atmosphere X in the exterior portion 33 by the ozone generating portion 35 is Bonded to the molecules of the cut surface layer and converted into highly hydrophilic functional groups (for example, -OH, -CHO, -COOH) to modify the surface of the semiconductor substrate 1 and remove organic substances on the surface Can do.

  Furthermore, as described above, the semiconductor device 3 (semiconductor substrate 1) is irradiated with ultraviolet rays in a state heated to 180 ° C. in advance, so that the semiconductor substrate 1 is not damaged and the collision speed of molecules on the surface layer is not affected. The surface can be effectively modified and organic substances on the surface can be efficiently removed. After pre-processing, the pre-processing unit 9 drives the first stage 27 to move the semiconductor substrate 1 to the first relay location 9a.

  Similarly, when the transfer unit 13 moves the semiconductor substrate 1 onto the second stage 28, the pretreatment of the semiconductor substrate 1 on the first stage 27 is performed at the processing location 9 d inside the pretreatment unit 9. . Then, after the pretreatment of the semiconductor substrate 1 on the first stage 27 is completed, the first stage 27 moves the semiconductor substrate 1 to the first relay location 9a. Next, the pretreatment unit 9 drives the second stage 28 to move the semiconductor substrate 1 placed on the second relay place 9 b to the treatment place 9 d facing the carriage 31. Thereby, the pretreatment of the semiconductor substrate 1 on the second stage 28 can be started immediately after the pretreatment of the semiconductor substrate 1 on the first stage 27 is completed. Subsequently, the preprocessing unit 9 irradiates the semiconductor device 3 mounted on the semiconductor substrate 1 with ultraviolet rays, so that the semiconductor substrate 1 is not damaged in the same manner as the semiconductor substrate 1 on the first stage 27. The surface can be effectively modified and organic substances on the surface can be efficiently removed. After performing the pretreatment, the pretreatment unit 9 drives the second stage 28 to move the semiconductor substrate 1 to the second relay location 9b.

  When the pretreatment of the semiconductor substrate 1 is completed in the pretreatment step S2 and the process proceeds to the cooling step S3, the transfer unit 13 transfers the semiconductor substrate 1 in the relay place 9c to the cooling plate 110a or 110b provided in the treatment places 11a and 11b. Place. Thus, the semiconductor substrate 1 heated in the pretreatment step S2 is cooled (temperature adjustment) for a predetermined time to an appropriate temperature (for example, room temperature) when the printing step S4 is performed.

  The semiconductor substrate 1 cooled in the cooling step S <b> 3 is transported onto the stage 39 located at the relay location 10 a of the coating unit 10 by the transport unit 13. In the printing step S <b> 5, the application unit 10 operates the chuck mechanism to hold the semiconductor substrate 1 placed on the stage 39 on the stage 39. Then, the coating unit 10 ejects droplets 57 from the nozzles 52 formed in each droplet ejection head 49 while scanning (relatively moving) the carriage 45 with respect to the stage 39 in the + X direction, for example.

  At this time, since the surface of the semiconductor substrate 1 has been subjected to the pretreatment by the pretreatment unit 9, the adhesion with the droplets 57 is improved. For this reason, the droplets 57 discharged from each nozzle 52 do not spread on the surface of the semiconductor substrate 1 and are well disposed at predetermined positions.

  Thereby, marks such as the company name mark 4, the model code 5, and the production number 6 are drawn on the surface of the semiconductor device 3. Then, the mark is irradiated with ultraviolet rays from the curing unit 48 installed on the −X side of the carriage 45 which is the rear side in the scanning movement direction. As a result, since the functional liquid 54 that forms the mark contains a photopolymerization initiator that starts polymerization by ultraviolet rays, the surface of the mark is immediately solidified or cured.

  At this time, the two droplet discharge heads 49 are arranged along the Y direction which is the sub-scanning direction, and the nozzle row 60 is also arranged linearly in the Y direction. The pinning time from the ejection to the curing by being irradiated with ultraviolet rays is the same without causing a difference between the two droplet ejection heads 49.

  When the scanning movement of the carriage 45 in the + X direction is completed, the stage 39 is fed by a distance LN (= LH) in the + Y direction, for example. While the carriage 45 is scanned and moved relative to the stage 39 in the −X direction (relative movement), the droplets 57 are ejected from the nozzles 52 formed on the droplet ejection heads 49, and the rear in the scanning direction. The mark is irradiated with ultraviolet rays from the curing unit 48 installed on the + X side of the carriage 45 which is the side.

  As a result, droplets are also ejected to the area between the two droplet ejection heads 49 where the droplets were not ejected by the first scanning movement. Also, in the droplet discharge by the second scanning movement, the pinning time from when the droplet 57 is discharged to the semiconductor device 3 until it is cured by being irradiated with ultraviolet rays is different between the two droplet discharge heads 49. It does not occur and is the same. Furthermore, since the distance in the X direction between the nozzle row 60 (actual nozzle row 60A) and the curing units 48 on both sides is the same, droplet ejection by the first scanning movement and droplet ejection by the second scanning movement are performed. The pinning time is the same.

  After printing on the semiconductor substrate 1, the coating unit 10 moves the stage 39 on which the semiconductor substrate 1 is placed to the relay location 10a. Thereby, the conveyance part 13 can make it easy to hold | grip the semiconductor substrate 1. FIG. Then, the application unit 10 stops the operation of the chuck mechanism and releases the holding of the semiconductor substrate 1.

  Thereafter, the semiconductor substrate 1 is transported to the storage unit 12 by the transport unit 13 and stored in the storage container 18 in the storage step S6.

  As described above, according to the present embodiment, since the surface treatment of the semiconductor device 3 can be performed by irradiating ultraviolet rays in an ozone atmosphere, the surface of the semiconductor device 3 is ashed as compared with the conventional plasma treatment. Surface treatment can be performed while preventing problems such as damage to the surface.

  Further, it is possible to prevent the occurrence of a problem that the resin containing epoxy provided on the surface of the semiconductor device 3 by the pretreatment is oxidized and modified from the surface to the deep inside. Therefore, the adhesion between the droplets 57 cured by ultraviolet rays and the semiconductor device 3 can be improved, and good print quality can be obtained.

  In addition, since the pretreatment unit 9 irradiates ultraviolet rays having a wavelength of 260 nm or less and the ozone concentration is set to 0.01 ppm or more, the pretreatment unit 9 can perform the pretreatment for reliably cutting the bonding of the epoxy surface. . In addition, since the pretreatment unit 9 irradiates ultraviolet rays while the heating devices 27H and 28H heat the semiconductor device 3 in the range of 160 ° C. or more and 190 ° C. or less, the surface treatment is excellent even in a low concentration ozone atmosphere. Can be executed. Therefore, it is not necessary for the ozone generator 35 to generate a large amount of ozone, and a small-sized ozone generator 35 can be used.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

For example, in the above embodiment, an ultraviolet curable ink is used as the UV ink, but the present invention is not limited to this, and various actinic ray curable inks that can use visible light and infrared light as curable light are used. be able to.
Similarly, various active light sources that emit active light such as visible light can be used as the light source, that is, an active light irradiation unit can be used.

  Here, in the present invention, the “actinic ray” is not particularly limited as long as it can impart energy capable of generating a starting species in the ink by the irradiation, and is broadly divided into α rays, γ rays, X-rays, ultraviolet rays, visible rays, electron beams and the like are included. Among these, from the viewpoints of curing sensitivity and device availability, ultraviolet rays and electron beams are preferable, and ultraviolet rays are particularly preferable. Therefore, as the actinic ray curable ink, it is preferable to use an ultraviolet curable ink that can be cured by irradiating ultraviolet rays as in the present embodiment.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate (base material), 3 ... Semiconductor device, 7 ... Printing apparatus, 9 ... Pre-processing part (pre-processing part), 10 ... Application | coating part (printing part), 27H, 28H ... Heating apparatus (heating part), 49: Droplet discharge head (discharge head), 48: Curing unit (irradiation unit), 52 ... Nozzle, 54 ... Functional liquid (liquid), 57 ... Droplet

Claims (8)

A surface treatment process for performing surface treatment by irradiating ultraviolet rays in an atmosphere containing ozone to a semiconductor device molded with resin;
A discharge step of discharging liquid droplets that are cured with actinic rays from a nozzle of a discharge head onto the surface of the semiconductor device;
An irradiating step of irradiating the droplets on the semiconductor device with the actinic rays.   The printing method according to claim 1, wherein in the surface treatment step, the wavelength of the ultraviolet light is set to 260 nm or less.   3. The printing method according to claim 1, wherein in the surface treatment step, the semiconductor device is heated to a temperature of 160 ° C. or higher and 190 ° C. or lower.   In the said surface treatment process, the ozone concentration in the said atmosphere is set to 0.01 ppm or more, The printing method as described in any one of Claims 1-3 characterized by the above-mentioned.   The printing method according to claim 4, wherein in the surface treatment step, the ozone concentration is set to 1.0 ppm or more. A surface treatment unit that performs surface treatment by irradiating ultraviolet rays in an atmosphere containing ozone to a semiconductor device molded with resin;
An ejection head having a nozzle for ejecting liquid droplets that are cured by actinic rays on the surface of the semiconductor device;
An irradiating unit that irradiates the liquid droplets on the semiconductor device with the actinic rays.   The printing apparatus according to claim 6, wherein the surface treatment unit irradiates the semiconductor device with ultraviolet rays having a wavelength of 260 nm or less.   The printing apparatus according to claim 6, further comprising a heating unit that heats the semiconductor substrate at 160 ° C. or more and 190 ° C. or less when the surface treatment unit irradiates the semiconductor device with the ultraviolet rays.

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