JP2011138968A - 面実装部品のはんだ付け方法および面実装部品 - Google Patents

面実装部品のはんだ付け方法および面実装部品 Download PDF

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Publication number
JP2011138968A
JP2011138968A JP2009298932A JP2009298932A JP2011138968A JP 2011138968 A JP2011138968 A JP 2011138968A JP 2009298932 A JP2009298932 A JP 2009298932A JP 2009298932 A JP2009298932 A JP 2009298932A JP 2011138968 A JP2011138968 A JP 2011138968A
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Japan
Prior art keywords
solder material
mass
mounting
soldering
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009298932A
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English (en)
Japanese (ja)
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JP2011138968A5 (enExample
Inventor
Minoru Uejima
稔 上島
Minoru Toyoda
実 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Senju Metal Industry Co Ltd
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Senju Metal Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senju Metal Industry Co Ltd filed Critical Senju Metal Industry Co Ltd
Priority to JP2009298932A priority Critical patent/JP2011138968A/ja
Priority to ES10841068T priority patent/ES2822311T3/es
Priority to EP10841068.9A priority patent/EP2521429B1/en
Priority to KR1020197034237A priority patent/KR20190132566A/ko
Priority to BR112012015939-9A priority patent/BR112012015939B1/pt
Priority to KR1020167035344A priority patent/KR20160148726A/ko
Priority to KR1020127016667A priority patent/KR20120123291A/ko
Priority to CN201080059835.4A priority patent/CN102714921B/zh
Priority to PCT/JP2010/073849 priority patent/WO2011081213A1/ja
Priority to US13/519,217 priority patent/US10354944B2/en
Priority to KR1020187034511A priority patent/KR102240216B1/ko
Publication of JP2011138968A publication Critical patent/JP2011138968A/ja
Publication of JP2011138968A5 publication Critical patent/JP2011138968A5/ja
Priority to US14/724,665 priority patent/US10297539B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3421—Leaded components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
JP2009298932A 2009-12-28 2009-12-28 面実装部品のはんだ付け方法および面実装部品 Pending JP2011138968A (ja)

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JP2009298932A JP2011138968A (ja) 2009-12-28 2009-12-28 面実装部品のはんだ付け方法および面実装部品
CN201080059835.4A CN102714921B (zh) 2009-12-28 2010-12-22 面安装部件的软钎焊方法以及面安装部件
PCT/JP2010/073849 WO2011081213A1 (ja) 2009-12-28 2010-12-22 面実装部品のはんだ付け方法および面実装部品
KR1020197034237A KR20190132566A (ko) 2009-12-28 2010-12-22 면 실장 부품의 솔더링 방법 및 면 실장 부품
BR112012015939-9A BR112012015939B1 (pt) 2009-12-28 2010-12-22 Método para soldagem de um componente para montagem em superfície e componente para montagem em superfície
KR1020167035344A KR20160148726A (ko) 2009-12-28 2010-12-22 면 실장 부품의 솔더링 방법 및 면 실장 부품
KR1020127016667A KR20120123291A (ko) 2009-12-28 2010-12-22 면 실장 부품의 솔더링 방법 및 면 실장 부품
ES10841068T ES2822311T3 (es) 2009-12-28 2010-12-22 Método para soldar un componente de montaje superficial y componente de montaje superficial
EP10841068.9A EP2521429B1 (en) 2009-12-28 2010-12-22 Method for soldering surface-mount component and surface-mount component
US13/519,217 US10354944B2 (en) 2009-12-28 2010-12-22 Method for soldering surface-mount component and surface-mount component
KR1020187034511A KR102240216B1 (ko) 2009-12-28 2010-12-22 면 실장 부품의 솔더링 방법 및 면 실장 부품
US14/724,665 US10297539B2 (en) 2009-12-28 2015-05-28 Electronic device including soldered surface-mount component

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013049067A (ja) * 2011-08-30 2013-03-14 Mitsubishi Electric Corp 半田材および半導体装置
JP2014065065A (ja) * 2012-09-26 2014-04-17 Tamura Seisakusho Co Ltd 無鉛はんだ合金、ソルダーペースト組成物及びプリント配線板
WO2015064231A1 (ja) * 2013-10-30 2015-05-07 富士電機株式会社 半導体モジュール

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803302B2 (en) * 2012-05-31 2014-08-12 Freescale Semiconductor, Inc. System, method and apparatus for leadless surface mounted semiconductor package
JP6713106B2 (ja) * 2014-02-24 2020-06-24 株式会社弘輝 鉛フリーはんだ合金、はんだ材料及び接合構造体
JP6097253B2 (ja) * 2014-07-02 2017-03-15 住友電気工業株式会社 三色光光源
EP3172349A2 (en) * 2014-07-21 2017-05-31 Alpha Assembly Solutions Inc. Low temperature high reliability tin alloy for soldering
CN106271181A (zh) * 2015-05-13 2017-01-04 广西民族大学 一种Sn-Sb-X系高温抗氧化无铅钎料
DE102015122259B4 (de) * 2015-12-18 2020-12-24 Infineon Technologies Austria Ag Halbleitervorrichtungen mit einer porösen Isolationsschicht
WO2018061711A1 (ja) 2016-09-27 2018-04-05 パナソニックＩｐマネジメント株式会社 半導体装置および製造方法
WO2021230623A1 (ko) * 2020-05-15 2021-11-18 주식회사 아모센스 파워모듈
EP3923321A1 (de) * 2020-06-08 2021-12-15 CeramTec GmbH Modul mit anschlusslaschen für zuleitungen
JP6936926B1 (ja) 2021-03-10 2021-09-22 千住金属工業株式会社 はんだ合金、はんだ粉末、はんだペースト、およびはんだ継手
KR20240093229A (ko) 2022-12-15 2024-06-24 숭실대학교산학협력단 미세액적장치, 그 생성시스템 및 모니터링 제어방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035978A (ja) * 1999-07-22 2001-02-09 Hitachi Ltd 鉛フリーはんだ接続構造体
JP2001284792A (ja) * 2000-03-30 2001-10-12 Tanaka Electronics Ind Co Ltd 半田材料及びそれを用いた半導体装置の製造方法
JP2002261104A (ja) * 2001-03-01 2002-09-13 Hitachi Ltd 半導体装置および電子機器
JP2002305213A (ja) * 2000-12-21 2002-10-18 Hitachi Ltd はんだ箔および半導体装置および電子装置
JP2004034134A (ja) * 2002-07-08 2004-02-05 Hitachi Ltd 線はんだおよび電子機器の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2615277B1 (fr) * 1987-05-11 1989-11-24 Inst Textile De France Dispositif de sechage par micro-onde d'une lisiere d'un materiau plan en defilement, notamment textile
FR2616000B1 (fr) * 1987-05-27 1993-01-08 Sgn Soc Gen Tech Nouvelle Dispositif permettant la coulee de verre radioactif en fusion dans un conteneur
US4888449A (en) * 1988-01-04 1989-12-19 Olin Corporation Semiconductor package
JP3220635B2 (ja) * 1996-02-09 2001-10-22 松下電器産業株式会社 はんだ合金及びクリームはんだ
JPH11317487A (ja) * 1998-05-01 1999-11-16 Nissan Motor Co Ltd 電子装置及び電子装置の実装方法
TW434756B (en) 1998-06-01 2001-05-16 Hitachi Ltd Semiconductor device and its manufacturing method
US6176947B1 (en) * 1998-12-31 2001-01-23 H-Technologies Group, Incorporated Lead-free solders
JP3892190B2 (ja) 1999-12-03 2007-03-14 株式会社日立製作所 混載実装構造体及び混載実装方法並びに電子機器
US20020155024A1 (en) * 2000-10-27 2002-10-24 H-Technologies Group, Inc. Lead-free solder compositions
CN100578778C (zh) * 2000-12-21 2010-01-06 株式会社日立制作所 电子器件
JP2002368293A (ja) * 2001-06-05 2002-12-20 Aisin Seiki Co Ltd 熱電モジュール、熱電モジュールの製造方法、熱電装置、ファイバ投光装置
US20030021718A1 (en) * 2001-06-28 2003-01-30 Osamu Munekata Lead-free solder alloy
US7105383B2 (en) * 2002-08-29 2006-09-12 Freescale Semiconductor, Inc. Packaged semiconductor with coated leads and method therefore
JP2005340268A (ja) 2004-05-24 2005-12-08 Renesas Technology Corp トランジスタパッケージ
US7320439B2 (en) * 2004-07-12 2008-01-22 Mosquito Coast Holdings, Llc Self-contained insect repelling and killing apparatus
JP2008238253A (ja) * 2007-03-29 2008-10-09 Hitachi Ltd Ｐｂフリーはんだ接続材料及びこれを用いた半導体実装構造体の製造方法
US7932587B2 (en) * 2007-09-07 2011-04-26 Infineon Technologies Ag Singulated semiconductor package
US8133759B2 (en) 2009-04-28 2012-03-13 Macronix International Co., Ltd. Leadframe

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035978A (ja) * 1999-07-22 2001-02-09 Hitachi Ltd 鉛フリーはんだ接続構造体
JP2001284792A (ja) * 2000-03-30 2001-10-12 Tanaka Electronics Ind Co Ltd 半田材料及びそれを用いた半導体装置の製造方法
JP2002305213A (ja) * 2000-12-21 2002-10-18 Hitachi Ltd はんだ箔および半導体装置および電子装置
JP2002261104A (ja) * 2001-03-01 2002-09-13 Hitachi Ltd 半導体装置および電子機器
JP2004034134A (ja) * 2002-07-08 2004-02-05 Hitachi Ltd 線はんだおよび電子機器の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013049067A (ja) * 2011-08-30 2013-03-14 Mitsubishi Electric Corp 半田材および半導体装置
JP2014065065A (ja) * 2012-09-26 2014-04-17 Tamura Seisakusho Co Ltd 無鉛はんだ合金、ソルダーペースト組成物及びプリント配線板
WO2015064231A1 (ja) * 2013-10-30 2015-05-07 富士電機株式会社 半導体モジュール
US9299637B2 (en) 2013-10-30 2016-03-29 Fuji Electric Co., Ltd. Semiconductor module

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US20150262926A1 (en) 2015-09-17
ES2822311T3 (es) 2021-04-30
US10354944B2 (en) 2019-07-16
EP2521429A4 (en) 2016-08-31
US10297539B2 (en) 2019-05-21
BR112012015939A8 (pt) 2018-07-17
BR112012015939B1 (pt) 2023-11-28
KR20190132566A (ko) 2019-11-27
US20120292087A1 (en) 2012-11-22
WO2011081213A1 (ja) 2011-07-07
CN102714921A (zh) 2012-10-03
CN102714921B (zh) 2016-08-03
BR112012015939A2 (pt) 2017-07-11
EP2521429B1 (en) 2020-09-09
KR20180130002A (ko) 2018-12-05
KR102240216B1 (ko) 2021-04-13
KR20160148726A (ko) 2016-12-26
EP2521429A1 (en) 2012-11-07

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