JP2011119755A5 - - Google Patents
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- JP2011119755A5 JP2011119755A5 JP2011022105A JP2011022105A JP2011119755A5 JP 2011119755 A5 JP2011119755 A5 JP 2011119755A5 JP 2011022105 A JP2011022105 A JP 2011022105A JP 2011022105 A JP2011022105 A JP 2011022105A JP 2011119755 A5 JP2011119755 A5 JP 2011119755A5
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- magnetization
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- 230000005415 magnetization Effects 0.000 claims description 343
- 230000005291 magnetic effect Effects 0.000 claims description 210
- 230000004888 barrier function Effects 0.000 claims description 51
- 230000000694 effects Effects 0.000 claims description 26
- 229910052742 iron Inorganic materials 0.000 claims description 25
- 230000015654 memory Effects 0.000 claims description 22
- 239000000696 magnetic material Substances 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 16
- 229910052779 Neodymium Inorganic materials 0.000 claims description 10
- 229910052772 Samarium Inorganic materials 0.000 claims description 10
- 229910052771 Terbium Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 9
- 229910052689 Holmium Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- 229910052691 Erbium Inorganic materials 0.000 claims description 8
- 229910052693 Europium Inorganic materials 0.000 claims description 8
- 229910052765 Lutetium Inorganic materials 0.000 claims description 8
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 8
- 229910052775 Thulium Inorganic materials 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 294
- 238000002425 crystallisation Methods 0.000 description 104
- 230000008025 crystallization Effects 0.000 description 104
- 229910045601 alloy Inorganic materials 0.000 description 48
- 239000000956 alloy Substances 0.000 description 48
- 229910005335 FePt Inorganic materials 0.000 description 31
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 229910052761 rare earth metal Inorganic materials 0.000 description 24
- 229910019236 CoFeB Inorganic materials 0.000 description 23
- 239000000203 mixture Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 230000005290 antiferromagnetic effect Effects 0.000 description 11
- 229910019227 CoFeTb Inorganic materials 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 230000005389 magnetism Effects 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052741 iridium Inorganic materials 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 229910052762 osmium Inorganic materials 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- 229910015136 FeMn Inorganic materials 0.000 description 4
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910018979 CoPt Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910015187 FePd Inorganic materials 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- 229910000767 Tm alloy Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910000979 O alloy Inorganic materials 0.000 description 1
- 229910019026 PtCr Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000009812 interlayer coupling reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011022105A JP5367739B2 (ja) | 2011-02-03 | 2011-02-03 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011022105A JP5367739B2 (ja) | 2011-02-03 | 2011-02-03 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007248251A Division JP4738395B2 (ja) | 2007-09-25 | 2007-09-25 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011119755A JP2011119755A (ja) | 2011-06-16 |
| JP2011119755A5 true JP2011119755A5 (enrdf_load_stackoverflow) | 2011-07-28 |
| JP5367739B2 JP5367739B2 (ja) | 2013-12-11 |
Family
ID=44284605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011022105A Active JP5367739B2 (ja) | 2011-02-03 | 2011-02-03 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5367739B2 (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101831931B1 (ko) | 2011-08-10 | 2018-02-26 | 삼성전자주식회사 | 외인성 수직 자화 구조를 구비하는 자기 메모리 장치 |
| JP5836163B2 (ja) | 2012-03-08 | 2015-12-24 | ルネサスエレクトロニクス株式会社 | 磁気メモリセル、磁気メモリセルの製造方法 |
| JP5597899B2 (ja) * | 2012-09-21 | 2014-10-01 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| JP6244617B2 (ja) * | 2012-09-28 | 2017-12-13 | ソニー株式会社 | 記憶素子、記憶装置、磁気ヘッド |
| US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
| US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| JP6054326B2 (ja) | 2014-03-13 | 2016-12-27 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| JP6180972B2 (ja) | 2014-03-13 | 2017-08-16 | 株式会社東芝 | 磁気抵抗素子および磁気メモリ |
| US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
| US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US9768377B2 (en) | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| US10475564B2 (en) | 2016-06-29 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation |
| CN109716547A (zh) | 2016-08-10 | 2019-05-03 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜以及使用该交换耦合膜的磁阻效应元件及磁检测装置 |
| JP2018056389A (ja) * | 2016-09-29 | 2018-04-05 | Tdk株式会社 | 磁気抵抗効果素子 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197872A (ja) * | 2001-12-26 | 2003-07-11 | Canon Inc | 磁気抵抗効果膜を用いたメモリ |
| JP3824600B2 (ja) * | 2003-07-30 | 2006-09-20 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
| US6967863B2 (en) * | 2004-02-25 | 2005-11-22 | Grandis, Inc. | Perpendicular magnetization magnetic element utilizing spin transfer |
| JP5096702B2 (ja) * | 2005-07-28 | 2012-12-12 | 株式会社日立製作所 | 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ |
| JP4444241B2 (ja) * | 2005-10-19 | 2010-03-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置 |
| JP2007150265A (ja) * | 2005-10-28 | 2007-06-14 | Toshiba Corp | 磁気抵抗効果素子および磁気記憶装置 |
| WO2008133107A1 (ja) * | 2007-04-24 | 2008-11-06 | Nec Corporation | 磁気抵抗素子、ｍｒａｍ、及び磁気センサー |
-
2011
- 2011-02-03 JP JP2011022105A patent/JP5367739B2/ja active Active
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