JP2011119273A - 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法 - Google Patents
金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法 Download PDFInfo
- Publication number
- JP2011119273A JP2011119273A JP2011028102A JP2011028102A JP2011119273A JP 2011119273 A JP2011119273 A JP 2011119273A JP 2011028102 A JP2011028102 A JP 2011028102A JP 2011028102 A JP2011028102 A JP 2011028102A JP 2011119273 A JP2011119273 A JP 2011119273A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- zinc oxide
- aluminum
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002082 metal nanoparticle Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims abstract description 51
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011787 zinc oxide Substances 0.000 claims abstract description 17
- 239000002243 precursor Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 238000003980 solgel method Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 35
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 238000007598 dipping method Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 230000001603 reducing effect Effects 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 238000007761 roller coating Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000012295 chemical reaction liquid Substances 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000006722 reduction reaction Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 16
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- -1 stirred uniformly Chemical compound 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Abstract
【解決手段】金属ナノ粒子を含むAZO透明導電膜の製造方法であって、先ず金属前駆体をゾルゲル法により形成されたアルミニウム添加亜鉛酸化物のアルコール含有反応液中に加えて、アルミニウム添加亜鉛酸化物のゾルゲルを形成すると同時にアルコールの還元作用により金属ナノ粒子を生成して、金属ナノ粒子を含むAZOゲル溶液を形成し、塗布成膜後に適切な熱処理を経るものであり、この金属ナノ粒子を含むAZO透明導電膜の可視光線範囲全体の光透過率が85%以上に達し、抵抗率が2×10-3Ω・cm以下である。
【選択図】図1
Description
図1は、本発明の実施形態に係る金属ナノ粒子を含むアルミニウム添加亜鉛酸化物(AZO)透明導電膜の製造工程を示すフローチャート図である。
実施例1は、AZOゲル溶液において、メトキシエタノールの還元作用を利用して、銀の前駆体を原子状態に還元し、銀のナノ粒子が得られる。
1.前記銀ナノ粒子を含むAZOゲル溶液をガラス基板上に滴下してから、約3000rpmで30秒間スピンコーティングを行う。
2.スピンコーティングを行ったガラス基板を350℃の高温炉中で10分間乾燥させる。
そして、以下のステップ3aまたはステップ3bを選択的に行う。
実施例2は、AZOゲル溶液において、メトキシエタノールの還元作用を利用して、金の前駆体を原子状態に還元し、金のナノ粒子が得られる。
104 金属前駆体
102 ゾルゲル法により作製したアルコール含有反応液
Claims (6)
- 金属前駆体をゾルゲル法により作製したアルミニウム添加亜鉛酸化物のアルコール含有反応液中に加え、アルミニウム添加亜鉛酸化物のゾルゲルを形成すると同時にアルコールの還元作用により金属ナノ粒子を生成して、金属ナノ粒子を含むアルミニウム添加亜鉛酸化物のゲル溶液を形成する工程と、
前記ゲル溶液により薄膜を形成する工程と、
前記薄膜に対して熱処理を行い、透明導電膜を形成する工程と
を備える金属ナノ粒子を含むアルミニウム添加亜鉛酸化物(AZO)透明導電膜の製造方法。 - 前記熱処理工程は、
焼成を行う第1次熱処理と、
水素熱処理を行う第2次熱処理と、
を備えることを特徴とする請求項1に記載の金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法。 - 前記熱処理工程は水素熱処理を備えることを特徴とする請求項1に記載の金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法。
- 前記ゲル溶液を薄膜に形成する方法は、スピンコーティング法、浸漬法、プリンティング法、スクリーンプリンティング法、ステンシルプリンティング法、スプレー法またはローラーコーティングを備えることを特徴とする請求項1〜3の何れか一項に記載の金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法。
- 前記透明導電膜中の該金属ナノ粒子の含有量は0.01at.%〜5at.%であることを特徴とする請求項1〜4の何れか一項に記載の金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法。
- 前記金属ナノ粒子は、銀、金、プラチナ、インジウム、ガリウム、ニッケル、パラジウム、銅及びタリウムから何れか1つを選択することを特徴とする請求項1〜5の何れか一項に記載の金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095111762 | 2006-04-03 | ||
TW95111762A TWI309050B (en) | 2006-04-03 | 2006-04-03 | Azo transparent conducting film with metallic nano particles and method of producing thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006149382A Division JP2007280910A (ja) | 2006-04-03 | 2006-05-30 | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011119273A true JP2011119273A (ja) | 2011-06-16 |
JP5469107B2 JP5469107B2 (ja) | 2014-04-09 |
Family
ID=38682127
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006149382A Pending JP2007280910A (ja) | 2006-04-03 | 2006-05-30 | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜とその製造方法 |
JP2011028102A Active JP5469107B2 (ja) | 2006-04-03 | 2011-02-14 | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006149382A Pending JP2007280910A (ja) | 2006-04-03 | 2006-05-30 | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜とその製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP2007280910A (ja) |
TW (1) | TWI309050B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101324558B1 (ko) * | 2012-04-04 | 2013-11-01 | 부산대학교 산학협력단 | 투명 복합체 전도성 산화막 및 이의 제조방법 |
KR101351475B1 (ko) | 2012-12-31 | 2014-01-15 | 순천대학교 산학협력단 | 투명전도성산화물 박막의 제조방법 및 이에 의해 제조되는 투명전도성산화물 박막 |
KR101397078B1 (ko) * | 2013-09-10 | 2014-05-19 | 부산대학교 산학협력단 | 투명 복합체 전도성 산화막 및 이를 이용하여 제조된 디스플레이 장치 |
JP2016126921A (ja) * | 2014-12-29 | 2016-07-11 | 小林 博 | 透明導電性膜の製造と製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8288767B2 (en) | 2010-01-04 | 2012-10-16 | National Taiwan University | Thin-film transistor and forming method thereof |
TWI573288B (zh) * | 2010-10-18 | 2017-03-01 | 鴻海精密工業股份有限公司 | 發光二極體及其製作方法 |
CN108231998A (zh) * | 2017-12-31 | 2018-06-29 | 中国科学院声学研究所 | 一种掺钒ZnO厚膜及其制备方法 |
CN108329023B (zh) * | 2018-03-05 | 2021-03-30 | 国网湖南省电力有限公司 | 一种氧化锌基纳米复合粉体电阻片的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06234521A (ja) * | 1992-12-15 | 1994-08-23 | Idemitsu Kosan Co Ltd | 透明導電膜およびその製造方法 |
JPH10283847A (ja) * | 1997-04-01 | 1998-10-23 | Sharp Corp | 透明導電膜 |
JP2005243249A (ja) * | 2004-02-24 | 2005-09-08 | Ulvac Japan Ltd | 透明導電膜形成用分散液、透明導電膜の形成方法及び透明電極 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196609A (ja) * | 1984-10-15 | 1986-05-15 | 大阪特殊合金株式会社 | 透明導電膜 |
JPS61205619A (ja) * | 1985-03-08 | 1986-09-11 | Osaka Tokushu Gokin Kk | 耐熱性酸化亜鉛透明導電膜 |
JP5070524B2 (ja) * | 2005-07-28 | 2012-11-14 | Dowaエレクトロニクス株式会社 | 導電膜の製法 |
-
2006
- 2006-04-03 TW TW95111762A patent/TWI309050B/zh active
- 2006-05-30 JP JP2006149382A patent/JP2007280910A/ja active Pending
-
2011
- 2011-02-14 JP JP2011028102A patent/JP5469107B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06234521A (ja) * | 1992-12-15 | 1994-08-23 | Idemitsu Kosan Co Ltd | 透明導電膜およびその製造方法 |
JPH10283847A (ja) * | 1997-04-01 | 1998-10-23 | Sharp Corp | 透明導電膜 |
JP2005243249A (ja) * | 2004-02-24 | 2005-09-08 | Ulvac Japan Ltd | 透明導電膜形成用分散液、透明導電膜の形成方法及び透明電極 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101324558B1 (ko) * | 2012-04-04 | 2013-11-01 | 부산대학교 산학협력단 | 투명 복합체 전도성 산화막 및 이의 제조방법 |
KR101351475B1 (ko) | 2012-12-31 | 2014-01-15 | 순천대학교 산학협력단 | 투명전도성산화물 박막의 제조방법 및 이에 의해 제조되는 투명전도성산화물 박막 |
KR101397078B1 (ko) * | 2013-09-10 | 2014-05-19 | 부산대학교 산학협력단 | 투명 복합체 전도성 산화막 및 이를 이용하여 제조된 디스플레이 장치 |
JP2016126921A (ja) * | 2014-12-29 | 2016-07-11 | 小林 博 | 透明導電性膜の製造と製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200739619A (en) | 2007-10-16 |
JP5469107B2 (ja) | 2014-04-09 |
JP2007280910A (ja) | 2007-10-25 |
TWI309050B (en) | 2009-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5469107B2 (ja) | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜の製造方法 | |
Neghabi et al. | The effect of annealing on structural, electrical and optical properties of nanostructured ZnS/Ag/ZnS films | |
Ren et al. | The key of ITO films with high transparency and conductivity: Grain size and surface chemical composition | |
Jeng | The influence of annealing atmosphere on the material properties of sol–gel derived SnO2: Sb films before and after annealing | |
Hernández-Granados et al. | Optically uniform thin films of mesoporous TiO2 for perovskite solar cell applications | |
JPH10261326A (ja) | 透明導電性組成物、これから形成された透明導電膜及びその製造方法 | |
CN102943253A (zh) | 一种掺铝氧化锌透明导电薄膜及其制备方法 | |
Kermani et al. | Design and fabrication of nanometric ZnS/Ag/MoO3 transparent conductive electrode and investigating the effect of annealing process on its characteristics | |
EP1462541B1 (en) | Method for forming thin film. | |
Gökçeli et al. | Investigation of hydrogen post-treatment effect on surface and optoelectronic properties of indium tin oxide thin films | |
Pinheiro et al. | Design of experiments optimization of fluorine-doped tin oxide films prepared by spray pyrolysis for photovoltaic applications | |
Lee et al. | Fabrication of high transmittance and low sheet resistance dual ion doped tin oxide films and their application in dye-sensitized solar cells | |
Lee et al. | The sandwich structure of Ga-doped zno thin films grown via H2O-, O2-, and O3-based atomic layer deposition | |
Li et al. | High infrared insulation and high visible light transmittance Sb/Yb co-doped SnO2 film prepared with sol–gel method | |
JP2010129379A (ja) | 湿潤ゲル体膜、透明導電性膜および透明導電性膜積層基板並びにそれらの製造方法 | |
CN103866253B (zh) | 一种高载流子浓度的超薄azo透明导电薄膜及其制备方法 | |
Yang et al. | Improvement of high-temperature resistance of the Ag-based multilayer films deposited by magnetron sputtering | |
Nehmann et al. | Aluminum-doped zinc oxide sol–gel thin films: Influence of the sol's water content on the resistivity | |
CN106245007B (zh) | 一种取向ito薄膜的制备方法 | |
CN105154841B (zh) | 铋掺杂氧化锡薄膜的制备方法 | |
CN113816615A (zh) | 一种超高透明导电性ito薄膜及其制备方法 | |
Choi et al. | The electrical and optical properties of direct-patternable SnO2 thin films containing Pt nanoparticles at various annealing temperatures | |
JPH06187832A (ja) | 透明導電膜の製造方法 | |
TWI435846B (zh) | A method for preparing transparent conductive zinc oxide thin film by dipping stitch doping technique | |
TWI514424B (zh) | 導電膜及其製法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130902 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140130 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5469107 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |