JP2011113082A - 有機発光ディスプレイ装置 - Google Patents
有機発光ディスプレイ装置 Download PDFInfo
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- JP2011113082A JP2011113082A JP2010143783A JP2010143783A JP2011113082A JP 2011113082 A JP2011113082 A JP 2011113082A JP 2010143783 A JP2010143783 A JP 2010143783A JP 2010143783 A JP2010143783 A JP 2010143783A JP 2011113082 A JP2011113082 A JP 2011113082A
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- 239000010409 thin film Substances 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims description 75
- 239000010408 film Substances 0.000 claims description 41
- 239000012044 organic layer Substances 0.000 claims description 28
- 230000000903 blocking effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- -1 ITO Chemical class 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
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Abstract
【解決手段】薄膜トランジスタ及び薄膜トランジスタ上に形成され、薄膜トランジスタに電気的に連結された有機発光素子を備え、有機発光素子から発散される光が薄膜トランジスタに直接入射されないように、薄膜トランジスタの少なくとも一側には、有機発光素子から発散される光を遮断する光遮断部が配されることを特徴とする有機発光ディスプレイ装置である。
【選択図】図1
Description
2 薄膜トランジスタ
3 有機発光素子
21 ゲート電極
22 ゲート絶縁層
23 活性層
24 絶縁層
25 ソース電極
26 ドレイン電極
27 パッシベーション層
28 画素定義膜
28a ホール
31 第1電極
32 有機層
33 第2電極
33a 光遮断部
Claims (10)
- 薄膜トランジスタ、及び前記薄膜トランジスタ上に形成され、前記薄膜トランジスタに電気的に連結された有機発光素子を備え、
前記有機発光素子から発散される光が前記薄膜トランジスタに直接入射されないように、前記薄膜トランジスタの少なくとも一側には、前記有機発光素子から発散される光を遮断する光遮断部が配されることを特徴とする有機発光ディスプレイ装置。 - 前記光遮断部は、前記有機発光素子から発散された光が、前記薄膜トランジスタに入射される経路上に配されることを特徴とする請求項1に記載の有機発光ディスプレイ装置。
- 基板上に形成されたものであって、ゲート電極と、前記ゲート電極と絶縁された活性層と、前記活性層に各々接するソース及びドレイン電極とを備える少なくとも1つの薄膜トランジスタと、
前記薄膜トランジスタ上に形成される複数の第1電極と、
前記第1電極間に形成される画素定義膜と、
前記第1電極及び前記画素定義膜上に形成される複数の有機層と、
前記有機層及び前記画素定義膜上に形成される第2電極を含み、
前記有機層の少なくともいずれか一側の前記画素定義膜には、複数のホールが形成されることを特徴とする有機発光ディスプレイ装置。 - 前記第2電極は、前記画素定義膜の前記ホールに沿って形成されていることを特徴とする請求項3に記載の有機発光ディスプレイ装置。
- 前記有機層から発散された光の一部は、前記画素定義膜の前記ホールに沿って形成されている前記第2電極によって反射されることを特徴とする請求項4に記載の有機発光ディスプレイ装置。
- 前記画素定義膜の前記ホールに沿って形成されている前記第2電極は、前記有機層から発散された光が前記薄膜トランジスタに直接入射されないようにすることを特徴とする請求項4に記載の有機発光ディスプレイ装置。
- 前記ホールは、前記活性層を取り囲むように形成されることを特徴とする請求項3に記載の有機発光ディスプレイ装置。
- 前記ホールは、前記画素定義膜で前記活性層が形成された部分は残し、その周辺部に沿って環状に形成されることを特徴とする請求項7に記載の有機発光ディスプレイ装置。
- 前記ホールと前記ソース及びドレイン電極との間の最短距離が青色光の波長より短くなるように、前記ホールが形成されることを特徴とする請求項3に記載の有機発光ディスプレイ装置。
- 前記活性層は、酸化物半導体からなることを特徴とする請求項3に記載の有機発光ディスプレイ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0115189 | 2009-11-26 | ||
KR1020090115189A KR101084176B1 (ko) | 2009-11-26 | 2009-11-26 | 유기 발광 디스플레이 장치 |
Publications (2)
Publication Number | Publication Date |
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JP2011113082A true JP2011113082A (ja) | 2011-06-09 |
JP5475570B2 JP5475570B2 (ja) | 2014-04-16 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010143783A Active JP5475570B2 (ja) | 2009-11-26 | 2010-06-24 | 有機発光ディスプレイ装置 |
Country Status (5)
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US (1) | US8587006B2 (ja) |
JP (1) | JP5475570B2 (ja) |
KR (1) | KR101084176B1 (ja) |
CN (1) | CN102082166B (ja) |
TW (1) | TWI531057B (ja) |
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US9385238B2 (en) * | 2011-07-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor using oxide semiconductor |
CN103579354B (zh) * | 2012-07-25 | 2017-09-29 | 群康科技(深圳)有限公司 | 薄膜晶体管基板及具备薄膜晶体管基板的显示装置 |
CN103730581B (zh) * | 2012-10-15 | 2016-05-18 | 乐金显示有限公司 | 有机发光装置和使用其的有机发光显示装置 |
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JP5245448B2 (ja) * | 2008-02-22 | 2013-07-24 | カシオ計算機株式会社 | 有機エレクトロルミネセンス表示装置及びその製造方法 |
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- 2010-08-20 US US12/860,840 patent/US8587006B2/en active Active
- 2010-10-06 TW TW099133974A patent/TWI531057B/zh active
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Patent Citations (4)
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JP2002132186A (ja) * | 2000-10-27 | 2002-05-09 | Nec Corp | アクティブマトリクス有機el表示装置及びその製造方法 |
JP2002229482A (ja) * | 2001-01-30 | 2002-08-14 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2003031355A (ja) * | 2001-07-10 | 2003-01-31 | Pioneer Electronic Corp | ディスプレイパネル |
JP2005181422A (ja) * | 2003-12-16 | 2005-07-07 | Nec Corp | 発光型表示装置及びその製造方法 |
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CN102082166B (zh) | 2015-07-15 |
TW201119029A (en) | 2011-06-01 |
US20110121299A1 (en) | 2011-05-26 |
US8587006B2 (en) | 2013-11-19 |
KR101084176B1 (ko) | 2011-11-17 |
KR20110058408A (ko) | 2011-06-01 |
CN102082166A (zh) | 2011-06-01 |
JP5475570B2 (ja) | 2014-04-16 |
TWI531057B (zh) | 2016-04-21 |
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