JP2011108474A - 有機エレクトロルミネッセンス素子及びこれを用いた多色表示装置 - Google Patents
有機エレクトロルミネッセンス素子及びこれを用いた多色表示装置 Download PDFInfo
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 20
- 239000011241 protective layer Substances 0.000 claims abstract description 91
- 238000001228 spectrum Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 97
- 150000002894 organic compounds Chemical class 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 239000003086 colorant Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 42
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- -1 aluminum quinolinol Chemical compound 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】無機保護層8の膜厚dが、無機保護層8の屈折率をn、有機エレクトロルミネッセンス素子のから取り出される光のスペクトルの最大ピーク波長をλ、自然数をmとした時、
[{(2m+1)/4}−(1/8)]λ<nd<[{(2m+1)/4}+(1/8)]λ
を満たしている。
【選択図】図1
Description
[{(2m+1)/4}−(1/8)]λ<nd<[{(2m+1)/4}+(1/8)]λ
を満たすことを特徴とする。
[{(2m+1)/4}−(1/8)]λ<nd<[{(2m+1)/4}+(1/8)]λ
を満たしている。
D:反射性電極と半透明性電極の光学的距離
λ:EL発光波長
φ1:反射電極での位相シフト量(ラジアン)
φ2:半透明性電極での位相シフト量(ラジアン)
N:整数
[{(2m+1)/4}−(1/8)]λ<nd<[{(2m+1)/4}+(1/8)]λ (2)
[{(2m1+1)/4}−(1/8)]λ1<n1d1<[{(2m1+1)/4}+(1/8)]λ1 (3)
図1に示す構成の有機EL素子を以下に示す方法で作製した。
第1の無機保護層8として、スパッタリング法によって厚さ140nmのTiO2を成膜し、次いでカバレッジ層として塗布プロセスと熱硬化によって厚さ30μmのエポキシ樹脂を成膜した。さらに、第2の無機保護層10としてCVD法によって厚さ1μmのSiN層を成膜した以外は実施例1と同様にして有機EL素子を作製した。
Claims (6)
- 第1の電極と、第2の電極と、前記第1の電極と前記第2の電極との間に位置する、少なくとも発光層を有する有機化合物層と、前記第2の電極に接して、前記第1の電極側とは反対側に設けられる無機保護層とを有する有機エレクトロルミネッセンス素子であって、
前記無機保護層の膜厚dが、前記保護層の屈折率をn、前記有機エレクトロルミネッセンス素子から取り出される光のスペクトルの最大ピーク波長をλ、自然数をmとした時、
[{(2m+1)/4}−(1/8)]λ<nd<[{(2m+1)/4}+(1/8)]λ
を満たすことを特徴とする有機エレクトロルミネッセンス素子。 - 前記無機保護層がSiNまたはTiO2からなることを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記自然数mが1であることを特徴とする請求項1又は2に記載の有機エレクトロルミネッセンス素子。
- 前記無機保護層の上に、5μm以上50μm以下の膜厚の樹脂からなるカバレッジ層と、前記無機保護層とは異なる0.5μm以上3μm以下の膜厚の無機保護層を有していることを特徴とする請求項1乃至3のいずれか1項に記載の有機エレクトロルミネッセンス素子。
- 有機エレクトロルミネッセンス素子を複数有する、2色以上の多色表示装置であって、
前記有機エレクトロルミネッセンス素子が、請求項1乃至4のいずれか1項に記載の有機エレクトロルミネッセンス素子であることを特徴とする多色表示装置。 - 前記陰極と接する前記無機保護層が異なる複数の有機エレクトロルミネッセンス素子にわたって、前記無機保護層が共通の膜厚d1で配置され、前記膜厚d1は、前記陰極と接する前記無機保護層の屈折率をn1、前記複数の有機エレクトロルミネッセンス素子のうち最も発光効率の小さい色を発光する有機エレクトロルミネッセンス素子から取り出される光のスペクトルの最大ピーク波長をλ1、自然数をm1とした時、
[{(2m1+1)/4}−(1/8)]λ1<n1d1<[{(2m1+1)/4}+(1/8)]λ1
を満たすことを特徴とする請求項5に記載の多色表示装置。
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JP2009261748A JP5683094B2 (ja) | 2009-11-17 | 2009-11-17 | 有機エレクトロルミネッセンス素子及びこれを用いた多色表示装置 |
US12/900,562 US8928013B2 (en) | 2009-11-17 | 2010-10-08 | Organic electroluminescence device and multi-color display apparatus using the same |
KR1020100111284A KR20110055400A (ko) | 2009-11-17 | 2010-11-10 | 유기 일렉트로루미네센스 소자 및 이것을 사용한 다색 표시장치 |
CN201010541906.6A CN102074659B (zh) | 2009-11-17 | 2010-11-12 | 有机电致发光器件及使用其的多色显示装置 |
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US (1) | US8928013B2 (ja) |
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Cited By (4)
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WO2012168978A1 (ja) * | 2011-06-09 | 2012-12-13 | パナソニック株式会社 | 有機発光パネルおよびその製造方法 |
JP2014123727A (ja) * | 2012-12-24 | 2014-07-03 | Samsung Display Co Ltd | 薄膜封止の製造装置及び薄膜封止の製造方法 |
JP2015111503A (ja) * | 2013-12-06 | 2015-06-18 | 東京エレクトロン株式会社 | 有機el表示装置およびその製造方法 |
JP2018073761A (ja) * | 2016-11-04 | 2018-05-10 | パイオニア株式会社 | 発光装置 |
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DE102013109646B4 (de) * | 2013-09-04 | 2021-12-02 | Pictiva Displays International Limited | Organisches optoelektronisches Bauelement |
CN104201288B (zh) * | 2014-09-12 | 2017-03-15 | 上海和辉光电有限公司 | 有机电致发光器件及包含该器件的显示器 |
CN104900812A (zh) * | 2015-04-23 | 2015-09-09 | 京东方科技集团股份有限公司 | 薄膜封装结构及其制作方法和显示装置 |
KR20170001827A (ko) * | 2015-06-25 | 2017-01-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102492730B1 (ko) * | 2015-10-02 | 2023-01-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102477262B1 (ko) * | 2016-08-05 | 2022-12-14 | 삼성디스플레이 주식회사 | 유기 전계 발광 표시 장치 |
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WO2012168978A1 (ja) * | 2011-06-09 | 2012-12-13 | パナソニック株式会社 | 有機発光パネルおよびその製造方法 |
JP2014123727A (ja) * | 2012-12-24 | 2014-07-03 | Samsung Display Co Ltd | 薄膜封止の製造装置及び薄膜封止の製造方法 |
JP2015111503A (ja) * | 2013-12-06 | 2015-06-18 | 東京エレクトロン株式会社 | 有機el表示装置およびその製造方法 |
JP2018073761A (ja) * | 2016-11-04 | 2018-05-10 | パイオニア株式会社 | 発光装置 |
JP2021108303A (ja) * | 2016-11-04 | 2021-07-29 | パイオニア株式会社 | 発光装置 |
JP7434511B2 (ja) | 2016-11-04 | 2024-02-20 | パイオニア株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
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CN102074659A (zh) | 2011-05-25 |
US8928013B2 (en) | 2015-01-06 |
CN102074659B (zh) | 2014-04-09 |
KR20110055400A (ko) | 2011-05-25 |
US20110114973A1 (en) | 2011-05-19 |
JP5683094B2 (ja) | 2015-03-11 |
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