JP2011097041A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP2011097041A
JP2011097041A JP2010217176A JP2010217176A JP2011097041A JP 2011097041 A JP2011097041 A JP 2011097041A JP 2010217176 A JP2010217176 A JP 2010217176A JP 2010217176 A JP2010217176 A JP 2010217176A JP 2011097041 A JP2011097041 A JP 2011097041A
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JP
Japan
Prior art keywords
target
substrate
semiconductor
film
compound semiconductor
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Pending
Application number
JP2010217176A
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English (en)
Japanese (ja)
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JP2011097041A5 (enExample
Inventor
Nobuaki Kaji
亘章 加治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2010217176A priority Critical patent/JP2011097041A/ja
Priority to US12/896,471 priority patent/US20110079507A1/en
Publication of JP2011097041A publication Critical patent/JP2011097041A/ja
Publication of JP2011097041A5 publication Critical patent/JP2011097041A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2010217176A 2009-10-02 2010-09-28 半導体素子の製造方法 Pending JP2011097041A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010217176A JP2011097041A (ja) 2009-10-02 2010-09-28 半導体素子の製造方法
US12/896,471 US20110079507A1 (en) 2009-10-02 2010-10-01 Manufacturing method of semiconductor element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009230730 2009-10-02
JP2010217176A JP2011097041A (ja) 2009-10-02 2010-09-28 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2011097041A true JP2011097041A (ja) 2011-05-12
JP2011097041A5 JP2011097041A5 (enExample) 2011-08-04

Family

ID=43822362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010217176A Pending JP2011097041A (ja) 2009-10-02 2010-09-28 半導体素子の製造方法

Country Status (2)

Country Link
US (1) US20110079507A1 (enExample)
JP (1) JP2011097041A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020137145A1 (ja) * 2018-12-28 2020-07-02 株式会社アルバック 成膜装置及び成膜方法
JP2022522423A (ja) * 2019-03-01 2022-04-19 アプライド マテリアルズ インコーポレイテッド 物理気相堆積システム及びプロセス
JP2023088160A (ja) * 2021-12-14 2023-06-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR20230174172A (ko) 2022-06-20 2023-12-27 시바우라 메카트로닉스 가부시끼가이샤 성막 장치

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
CN117265475A (zh) * 2022-06-20 2023-12-22 芝浦机械电子装置株式会社 成膜装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525199A (en) * 1991-11-13 1996-06-11 Optical Corporation Of America Low pressure reactive magnetron sputtering apparatus and method
JPH06158305A (ja) * 1992-11-27 1994-06-07 Shimadzu Corp インラインスパッタリング装置
WO2001033643A1 (en) * 1999-10-29 2001-05-10 Ohio University BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS
AU2003207295A1 (en) * 2002-02-14 2003-09-04 Honda Giken Kogyo Kabushiki Kaisha Light absorbing layer forming method
US7172681B2 (en) * 2003-02-05 2007-02-06 Bridgestone Corporation Process for producing rubber-based composite material
JP2005019742A (ja) * 2003-06-26 2005-01-20 Matsushita Electric Ind Co Ltd 太陽電池
US20080121924A1 (en) * 2006-11-24 2008-05-29 Showa Denko K.K. Apparatus for manufacturing group iii nitride compound semiconductor light-emitting device, method of manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp
US20080223434A1 (en) * 2007-02-19 2008-09-18 Showa Denko K.K. Solar cell and process for producing the same
US8383439B2 (en) * 2007-10-25 2013-02-26 Showa Denko K.K. Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp
JP4997448B2 (ja) * 2007-12-21 2012-08-08 独立行政法人産業技術総合研究所 窒化物半導体の製造方法および窒化物半導体デバイス
US8894826B2 (en) * 2009-09-24 2014-11-25 Jesse A. Frantz Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020137145A1 (ja) * 2018-12-28 2020-07-02 株式会社アルバック 成膜装置及び成膜方法
JPWO2020137145A1 (ja) * 2018-12-28 2021-09-09 株式会社アルバック 成膜装置及び成膜方法
JP2022522423A (ja) * 2019-03-01 2022-04-19 アプライド マテリアルズ インコーポレイテッド 物理気相堆積システム及びプロセス
JP7274594B2 (ja) 2019-03-01 2023-05-16 アプライド マテリアルズ インコーポレイテッド 物理気相堆積システム及びプロセス
JP2023088160A (ja) * 2021-12-14 2023-06-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7677731B2 (ja) 2021-12-14 2025-05-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR20230174172A (ko) 2022-06-20 2023-12-27 시바우라 메카트로닉스 가부시끼가이샤 성막 장치
US12385125B2 (en) 2022-06-20 2025-08-12 Shibaura Mechatronics Corporation Film formation apparatus

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US20110079507A1 (en) 2011-04-07

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