JP2011097041A5 - - Google Patents
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- Publication number
- JP2011097041A5 JP2011097041A5 JP2010217176A JP2010217176A JP2011097041A5 JP 2011097041 A5 JP2011097041 A5 JP 2011097041A5 JP 2010217176 A JP2010217176 A JP 2010217176A JP 2010217176 A JP2010217176 A JP 2010217176A JP 2011097041 A5 JP2011097041 A5 JP 2011097041A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- manufacturing
- compound semiconductor
- indium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 3
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010217176A JP2011097041A (ja) | 2009-10-02 | 2010-09-28 | 半導体素子の製造方法 |
| US12/896,471 US20110079507A1 (en) | 2009-10-02 | 2010-10-01 | Manufacturing method of semiconductor element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009230730 | 2009-10-02 | ||
| JP2010217176A JP2011097041A (ja) | 2009-10-02 | 2010-09-28 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011097041A JP2011097041A (ja) | 2011-05-12 |
| JP2011097041A5 true JP2011097041A5 (enExample) | 2011-08-04 |
Family
ID=43822362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010217176A Pending JP2011097041A (ja) | 2009-10-02 | 2010-09-28 | 半導体素子の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20110079507A1 (enExample) |
| JP (1) | JP2011097041A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5272390B2 (ja) * | 2007-11-29 | 2013-08-28 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ |
| KR102637922B1 (ko) * | 2016-03-10 | 2024-02-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 안정화 방법 및 이를 이용한 증착 방법 |
| CN112639158A (zh) * | 2018-12-28 | 2021-04-09 | 株式会社爱发科 | 成膜装置以及成膜方法 |
| TWI818151B (zh) * | 2019-03-01 | 2023-10-11 | 美商應用材料股份有限公司 | 物理氣相沉積腔室及其操作方法 |
| JP7677731B2 (ja) * | 2021-12-14 | 2025-05-15 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| CN117265475A (zh) * | 2022-06-20 | 2023-12-22 | 芝浦机械电子装置株式会社 | 成膜装置 |
| KR20230174172A (ko) | 2022-06-20 | 2023-12-27 | 시바우라 메카트로닉스 가부시끼가이샤 | 성막 장치 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5525199A (en) * | 1991-11-13 | 1996-06-11 | Optical Corporation Of America | Low pressure reactive magnetron sputtering apparatus and method |
| JPH06158305A (ja) * | 1992-11-27 | 1994-06-07 | Shimadzu Corp | インラインスパッタリング装置 |
| WO2001033643A1 (en) * | 1999-10-29 | 2001-05-10 | Ohio University | BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
| AU2003207295A1 (en) * | 2002-02-14 | 2003-09-04 | Honda Giken Kogyo Kabushiki Kaisha | Light absorbing layer forming method |
| US7172681B2 (en) * | 2003-02-05 | 2007-02-06 | Bridgestone Corporation | Process for producing rubber-based composite material |
| JP2005019742A (ja) * | 2003-06-26 | 2005-01-20 | Matsushita Electric Ind Co Ltd | 太陽電池 |
| US20080121924A1 (en) * | 2006-11-24 | 2008-05-29 | Showa Denko K.K. | Apparatus for manufacturing group iii nitride compound semiconductor light-emitting device, method of manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp |
| US20080223434A1 (en) * | 2007-02-19 | 2008-09-18 | Showa Denko K.K. | Solar cell and process for producing the same |
| US8383439B2 (en) * | 2007-10-25 | 2013-02-26 | Showa Denko K.K. | Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp |
| JP4997448B2 (ja) * | 2007-12-21 | 2012-08-08 | 独立行政法人産業技術総合研究所 | 窒化物半導体の製造方法および窒化物半導体デバイス |
| US8894826B2 (en) * | 2009-09-24 | 2014-11-25 | Jesse A. Frantz | Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering |
-
2010
- 2010-09-28 JP JP2010217176A patent/JP2011097041A/ja active Pending
- 2010-10-01 US US12/896,471 patent/US20110079507A1/en not_active Abandoned
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