JP2011082521A - ゲッター材料の処理方法およびゲッター材料の封止方法 - Google Patents
ゲッター材料の処理方法およびゲッター材料の封止方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 184
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000007789 sealing Methods 0.000 title claims description 26
- 239000011241 protective layer Substances 0.000 claims abstract description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 238000001994 activation Methods 0.000 claims description 13
- 230000004913 activation Effects 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 238000007725 thermal activation Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 238000004377 microelectronic Methods 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 239000012080 ambient air Substances 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000003570 air Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 19
- 238000007872 degassing Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910000986 non-evaporable getter Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/94—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/52—Means for absorbing or adsorbing the gas mixture, e.g. by gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Micromachines (AREA)
Abstract
【解決手段】約10−2mbarより高い圧力及び約50℃から120℃の間の温度で、約1分から10分の間の期間にわたって、二酸素及び/または二窒素の乾燥雰囲気下でゲッター材料(104)を酸化及び/または窒化する段階の少なくとも一方を含み、前記ゲッター材料(104)の酸化物及び/または窒化物から構成される保護層(106)を形成する、ゲッター材料(104)の処理方法。
【選択図】図3
Description
Ti(固体)+H2O(気体)→TiOx+yH (1)
キャビティの壁を形成するように意図された層の1面上に少なくともゲッター材料を堆積する段階と、
ゲッター材料に上記で説明したような処理を実施する段階と、
ゲッター材料を含むキャビティを閉鎖する段階と、
を少なくとも含む。
Ti(固体)+O2(気体)→TixOy(固体) (2)
Ti(固体)+N2(気体)→TiwNz(固体) (3)
102 基板
104 ゲッター材料
106 保護層
110 第2基板
112 シーリングビード
114 密封キャビティ
200 封止構造体
Claims (18)
- 約10−2mbarをより高い圧力及び約50℃から120℃の間の温度で、約1分から10分の間の期間にわたって、二酸素及び/または二窒素の乾燥雰囲気下でゲッター材料(104)を酸化及び/または窒化する段階の少なくとも一方を含み、前記ゲッター材料(104)の酸化物及び/または窒化物から構成される保護層(106)を形成する、ゲッター材料(104)の処理方法。
- 前記酸化及び/または窒化段階より前に、前記ゲッター材料(104)を含む環境を真空化するかまたは真空状態に維持する段階をさらに含む、請求項1に記載の方法。
- 前記酸化及び/窒化段階を実施する前に前記ゲッター材料(104)が外気に曝露された場合、前記ゲッター材料(104)の前記酸化及び/または窒化段階より前に、その熱活性化温度付近の温度及び二次真空下で、前記ゲッター材料(104)の熱処理する段階をさらに含む、請求項1または2に記載の方法。
- 前記熱処理段階を約1時間から10時間の間の期間にわたって実施する、請求項3に記載の方法。
- 前記ゲッター材料(104)が薄層として形成され、且つ/またはチタン及び/またはジルコニウム及び/またはバナジウムから構成される、請求項1から4のいずれか一項に記載の方法。
- 前記ゲッター材料(104)が約200nm以下の粒径を有する、請求項1から5のいずれか一項に記載の方法。
- キャビティ(114)の壁を形成するよう意図された層(102)の1面上に少なくともゲッター材料(104)を堆積する段階と、
請求項1から6のいずれか一項に記載のゲッター材料(104)の処理方法を実施する段階と、
前記ゲッター材料(104)を含む前記キャビティ(114)を閉鎖する段階と、
を少なくとも含む、キャビティ(114)内にゲッター材料(104)を封止する方法。 - 前記ゲッター材料(104)の処理方法と前記キャビティ(114)の閉鎖段階との間に、前記ゲッター材料(104)の活性化温度と比較して約50℃から150℃低い温度及び二次真空下で実施する前記ゲッター材料(104)の熱処理段階をさらに含む、請求項7に記載の方法。
- 前記ゲッター材料(104)の処理方法と前記キャビティ(114)の閉鎖段階との間に実施される前記ゲッター材料(104)の熱処理段階を、約数分から数十分の間の期間にわたって実行する、請求項8に記載の方法。
- 前記ゲッター材料(104)の処理方法を実行した後、または、前記方法が前記ゲッター材料(104)の処理方法と前記キャビティ(114)の閉鎖段階との間に実施される前記ゲッター材料(104)の熱処理段階を含む場合は前記ゲッター材料(104)の熱処理段階の後に、前記ゲッター材料(104)の熱活性化段階をさらに含む、請求項7から9のいずれか一項に記載の方法。
- 前記ゲッター材料(104)の熱活性化段階を前記キャビティ(114)の閉鎖段階の間に実施する、請求項10に記載の方法。
- 前記ゲッター材料(104)の熱活性化段階を、前記ゲッター材料(104)を約200℃から450℃の間の温度まで加熱することによって実施する、請求項10または11に記載の方法。
- マイクロエレクトロニクス及び/またはナノエレクトロニクスデバイス(100)をさらに前記キャビティ(114)中に封止する、請求項7から12のいずれか一項に記載の方法。
- 少なくとも1つの前記ゲッター材料(104)の非自然酸化物及び/または窒化物から構成され、約1nmから10nmの間の厚さを有する少なくとも1つの保護層(106)を表面上に備えるゲッター材料(104)。
- 前記ゲッター材料(104)が薄層として形成され、且つ/またはチタン及び/またはジルコニウム及び/またはバナジウムから構成される、請求項14に記載のゲッター材料(104)。
- 約200nm以下の粒径を有する、請求項14または15に記載のゲッター材料(104)。
- 請求項14から16のいずれか一項に記載のゲッター材料(104)がその中に配置される少なくとも1つのキャビティ(114)を備えた封止構造体(200)。
- 前記キャビティ(114)内に封止された少なくとも1つのマイクロエレクトロニクス及び/またはナノエレクトロニクスデバイス(100)をさらに備えた、請求項17に記載の封止構造体(200)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0956997 | 2009-10-07 | ||
FR0956997A FR2950876B1 (fr) | 2009-10-07 | 2009-10-07 | Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter |
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JP2011082521A true JP2011082521A (ja) | 2011-04-21 |
JP5959146B2 JP5959146B2 (ja) | 2016-08-02 |
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JP2010226463A Expired - Fee Related JP5959146B2 (ja) | 2009-10-07 | 2010-10-06 | ゲッター材料の処理方法およびゲッター材料の封止方法 |
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US (1) | US9051173B2 (ja) |
EP (1) | EP2308798B1 (ja) |
JP (1) | JP5959146B2 (ja) |
FR (1) | FR2950876B1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2950877B1 (fr) | 2009-10-07 | 2012-01-13 | Commissariat Energie Atomique | Structure a cavite comportant une interface de collage a base de materiau getter |
FR2967302B1 (fr) | 2010-11-09 | 2012-12-21 | Commissariat Energie Atomique | Structure d'encapsulation d'un micro-dispositif comportant un matériau getter |
FR2967150A1 (fr) | 2010-11-09 | 2012-05-11 | Commissariat Energie Atomique | Procédé de réalisation de substrat a couches enfouies de matériau getter |
US9452925B2 (en) | 2011-06-27 | 2016-09-27 | Invensense, Inc. | Method of increasing MEMS enclosure pressure using outgassing material |
US9540230B2 (en) | 2011-06-27 | 2017-01-10 | Invensense, Inc. | Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures |
US9718679B2 (en) | 2011-06-27 | 2017-08-01 | Invensense, Inc. | Integrated heater for gettering or outgassing activation |
FR2981198B1 (fr) * | 2011-10-11 | 2014-04-04 | Commissariat Energie Atomique | Structure d'encapsulation de dispositif electronique et procede de realisation d'une telle structure |
FR2982073B1 (fr) * | 2011-10-28 | 2014-10-10 | Commissariat Energie Atomique | Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique |
US9738512B2 (en) | 2012-06-27 | 2017-08-22 | Invensense, Inc. | CMOS-MEMS integrated device including multiple cavities at different controlled pressures and methods of manufacture |
WO2014159946A1 (en) * | 2013-03-13 | 2014-10-02 | Robert Bosch Gmbh | Mems device having a getter |
NO2944700T3 (ja) | 2013-07-11 | 2018-03-17 | ||
FR3014240B1 (fr) | 2013-11-29 | 2017-05-05 | Commissariat Energie Atomique | Procede de realisation d'un substrat comportant un materiau getter dispose sur des parois d'un ou plusieurs trous borgnes formes dans le substrat |
FR3014241B1 (fr) | 2013-11-29 | 2017-05-05 | Commissariat Energie Atomique | Structure d'encapsulation comprenant des tranchees partiellement remplies de materiau getter |
FR3021645B1 (fr) | 2014-06-03 | 2019-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure d'encapsulation a plusieurs cavites munies de canaux d'acces de hauteurs differentes |
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JP2008084987A (ja) * | 2006-09-26 | 2008-04-10 | Matsushita Electric Works Ltd | 真空封止デバイスおよびその製造方法 |
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Also Published As
Publication number | Publication date |
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FR2950876A1 (fr) | 2011-04-08 |
JP5959146B2 (ja) | 2016-08-02 |
US9051173B2 (en) | 2015-06-09 |
US20110079425A1 (en) | 2011-04-07 |
FR2950876B1 (fr) | 2012-02-10 |
EP2308798A1 (fr) | 2011-04-13 |
EP2308798B1 (fr) | 2018-01-10 |
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