JP2011077296A - 半導体装置とその製造方法 - Google Patents
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- WNCHKNNQBGSZCF-UHFFFAOYSA-N cesium lithium boric acid hydrogen borate Chemical compound B([O-])([O-])O.B(O)(O)O.B(O)(O)O.[Li+].[Cs+] WNCHKNNQBGSZCF-UHFFFAOYSA-N 0.000 description 1
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- VCZFPTGOQQOZGI-UHFFFAOYSA-N lithium bis(oxoboranyloxy)borinate Chemical compound [Li+].[O-]B(OB=O)OB=O VCZFPTGOQQOZGI-UHFFFAOYSA-N 0.000 description 1
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】半導体装置1は、受光部を有する活性層3が設けられた第1の面2aと、受光面となる第2の面2bとを有する半導体基板2と、活性層3上に設けられた配線層5と、配線層5を覆う絶縁層6と、半導体基板2の第1の面2a上に絶縁層6を介して接合された支持基板8とを具備する。半導体基板2と支持基板8との接合体9の外周面Sと活性層3との間には、第2の面2bから半導体基板2と絶縁層6を貫通し、支持基板8内に達する介在部10が設けられている。
【選択図】図1
Description
Claims (5)
- 受光部を有する活性層が設けられた第1の面と、前記受光部への受光面となる第2の面とを有する半導体基板と、
前記活性層上に設けられた配線層と、
前記配線層を覆うように設けられた絶縁層と、
前記半導体基板の前記第1の面と対向するように、前記絶縁層を介して前記半導体基板と接合された支持基板と、
前記半導体基板と前記支持基板との接合体の外周面と前記活性層との間に、前記半導体基板の前記第2の面から前記半導体基板および前記絶縁層を貫通し、前記支持基板内に達するように設けられた介在部と
を具備することを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記介在部は、前記半導体基板の前記第2の面から前記半導体基板および前記絶縁層を貫通し、前記支持基板内に達するように形成された溝と、少なくとも前記溝の内壁面を覆うように設けられた被覆層とを有することを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記介在部は、レーザグルービングにより形成された前記溝と、前記被覆層として前記溝の内壁面に形成された変質層とを有することを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記介在部は前記被覆層として前記溝内に埋め込まれた充填層を有することを特徴とする半導体装置。 - 第1の面と第2の面とを有する半導体基板の前記第1の面における複数の装置領域内に、それぞれ受光部を有する活性層を形成する工程と、
前記複数の装置領域内の前記活性層上に配線層をそれぞれ形成する工程と、
前記複数の装置領域内の前記配線層を覆うように絶縁層を形成する工程と、
前記半導体基板の前記第1の面上に前記絶縁層を介して支持基板を接合する工程と、
前記支持基板に接合された前記半導体基板を前記第2の面側から加工して薄厚化し、前記半導体基板の前記第2の面に前記受光部への受光面を形成する工程と、
前記半導体基板の前記複数の装置領域の外周部と前記活性層との間に、前記半導体基板の前記第2の面から前記半導体基板および前記絶縁層を貫通し、前記支持基板内に達する介在部を形成する工程と、
前記半導体基板と前記支持基板との接合体を前記装置領域に沿って切断し、半導体装置を個片化する工程と
を具備することを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009227207A JP4977183B2 (ja) | 2009-09-30 | 2009-09-30 | 半導体装置 |
US12/883,674 US8338904B2 (en) | 2009-09-30 | 2010-09-16 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009227207A JP4977183B2 (ja) | 2009-09-30 | 2009-09-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011077296A true JP2011077296A (ja) | 2011-04-14 |
JP4977183B2 JP4977183B2 (ja) | 2012-07-18 |
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JP2009227207A Expired - Fee Related JP4977183B2 (ja) | 2009-09-30 | 2009-09-30 | 半導体装置 |
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US (1) | US8338904B2 (ja) |
JP (1) | JP4977183B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013062382A (ja) * | 2011-09-13 | 2013-04-04 | Toshiba Corp | 半導体装置およびその製造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5324890B2 (ja) * | 2008-11-11 | 2013-10-23 | ラピスセミコンダクタ株式会社 | カメラモジュールおよびその製造方法 |
JP5542543B2 (ja) | 2010-06-28 | 2014-07-09 | 株式会社東芝 | 半導体装置の製造方法 |
JP5279775B2 (ja) | 2010-08-25 | 2013-09-04 | 株式会社東芝 | 半導体装置の製造方法 |
JP5279782B2 (ja) | 2010-09-16 | 2013-09-04 | 株式会社東芝 | 半導体装置の製造方法 |
US9947688B2 (en) | 2011-06-22 | 2018-04-17 | Psemi Corporation | Integrated circuits with components on both sides of a selected substrate and methods of fabrication |
US20130154049A1 (en) * | 2011-06-22 | 2013-06-20 | George IMTHURN | Integrated Circuits on Ceramic Wafers Using Layer Transfer Technology |
US8809109B2 (en) * | 2012-05-21 | 2014-08-19 | Stion Corporation | Method and structure for eliminating edge peeling in thin-film photovoltaic absorber materials |
JP6524003B2 (ja) | 2016-03-17 | 2019-06-05 | 東芝メモリ株式会社 | 半導体装置 |
US10867836B2 (en) * | 2016-05-02 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer stack and fabrication method thereof |
CN111293102B (zh) * | 2020-02-21 | 2022-07-05 | 上海航天电子通讯设备研究所 | 一种基板混合薄膜多层布线制作方法 |
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JPH05235007A (ja) * | 1991-03-07 | 1993-09-10 | Nippon Soken Inc | 半導体基板の製造方法 |
JPH11211632A (ja) * | 1998-01-26 | 1999-08-06 | Sharp Corp | 電子顕微鏡観察用試料の作成方法および電子顕微鏡観察用試料加工装置 |
JP2006032495A (ja) * | 2004-07-13 | 2006-02-02 | Sony Corp | 固体撮像素子及びその製造方法、半導体装置の製造方法 |
JP2007013089A (ja) * | 2005-06-02 | 2007-01-18 | Sony Corp | 固体撮像素子及びその製造方法 |
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US6512809B2 (en) * | 2000-05-02 | 2003-01-28 | Siemens Aktiengesellschaft | Radiation detector for an X-ray computed tomography apparatus |
JP4443865B2 (ja) * | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
CN100468612C (zh) * | 2004-03-25 | 2009-03-11 | 株式会社东芝 | 半导体器件及其制造方法 |
JP2006261638A (ja) * | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
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JP2008078382A (ja) * | 2006-09-21 | 2008-04-03 | Toshiba Corp | 半導体装置とその製造方法 |
KR20090035262A (ko) * | 2007-10-05 | 2009-04-09 | 삼성전자주식회사 | 이미지 센서 및 그의 제조 방법 |
SG152086A1 (en) * | 2007-10-23 | 2009-05-29 | Micron Technology Inc | Packaged semiconductor assemblies and associated systems and methods |
JP5444899B2 (ja) * | 2008-09-10 | 2014-03-19 | ソニー株式会社 | 固体撮像装置の製造方法、および固体撮像装置の製造基板 |
KR20100108109A (ko) * | 2009-03-27 | 2010-10-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
-
2009
- 2009-09-30 JP JP2009227207A patent/JP4977183B2/ja not_active Expired - Fee Related
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2010
- 2010-09-16 US US12/883,674 patent/US8338904B2/en not_active Expired - Fee Related
Patent Citations (4)
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JPH05235007A (ja) * | 1991-03-07 | 1993-09-10 | Nippon Soken Inc | 半導体基板の製造方法 |
JPH11211632A (ja) * | 1998-01-26 | 1999-08-06 | Sharp Corp | 電子顕微鏡観察用試料の作成方法および電子顕微鏡観察用試料加工装置 |
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JP2007013089A (ja) * | 2005-06-02 | 2007-01-18 | Sony Corp | 固体撮像素子及びその製造方法 |
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JP2013062382A (ja) * | 2011-09-13 | 2013-04-04 | Toshiba Corp | 半導体装置およびその製造方法 |
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US8338904B2 (en) | 2012-12-25 |
US20110073983A1 (en) | 2011-03-31 |
JP4977183B2 (ja) | 2012-07-18 |
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