JP2011072047A - フィルタ構造 - Google Patents
フィルタ構造 Download PDFInfo
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- JP2011072047A JP2011072047A JP2011004509A JP2011004509A JP2011072047A JP 2011072047 A JP2011072047 A JP 2011072047A JP 2011004509 A JP2011004509 A JP 2011004509A JP 2011004509 A JP2011004509 A JP 2011004509A JP 2011072047 A JP2011072047 A JP 2011072047A
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- 239000000758 substrate Substances 0.000 claims description 37
- 238000010295 mobile communication Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 25
- 230000004044 response Effects 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 238000010897 surface acoustic wave method Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- -1 Ta 2 O 5 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000010267 cellular communication Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Circuits Of Receivers In General (AREA)
Abstract
【解決手段】一実施形態によるフィルタは、第1信号線および第2信号線を備える第1ポートと;第1信号線および第2信号線を備える第2ポートと;前記第1ポートの前記第1信号線を前記第2ポートの前記第1信号線に接続する第1共振子と;前記第1ポートの前記第2信号線を前記第2ポートの前記第2信号線に接続する第2共振子と;前記第1ポートの前記第1信号線を前記第2ポートの前記第2信号線に接続する第3共振子と;前記第1ポートの前記第2信号線を前記第2ポートの前記第1信号線に接続する第4共振子と;を有し、前記第1〜第4共振子はいずれもバルク音波共振子であり、前記第1及び第2共振子は第1の面積を有し、前記第3及び第4共振子は第2の面積を有し、前記第1の面積は前記第2の面積よりも大きい。
【選択図】図11
Description
1.音響的に能動的な圧電層
2.圧電層とは反対側にある電極
3.基板からの音響遮断手段
圧電層は例えば、ZnO、AIN、ZnS、または薄膜として製造可能なその他の圧電材料でよい。例えば、強誘電性セラミックも圧電材料として使用できる。その他、PbTiO3 、Pb(Zrx Ti 1−x )O3 、ランタンジルコン酸塩、及びチタン酸塩族も使用できる。電極層を形成するために使用する材料としては、音響インピーダンスが高い導電性材料が好ましい。例えば、タングステン(W)、アルミニウム(Al)、銅(Cu)、モリブデン(Mo)、ニッケル(Ni)、チタン(Ti)、ニオビウム(Nb)、銀(Ag)、金(Au)およびタンタル(Ta)のような任意の適宜の材料からなるものでよい。基板は一般的には、例えばSi、SiO2 、ガラス、またはセラミック材料からなっている。
・基板のバイアホール
・精密機械的なブリッジ構造/音響ミラー構造
バイアホールおよびブリッジ構造では、音響反射面は素子の上下の空気の界面となる。ブリッジ構造は一般的には、エッチングにより除去されて自立構造を形成する犠牲層を利用して製造される。犠牲層を利用すると、バイアホール構造のように基板を大幅に改修する必要がない。よって、多様な基板材料を使用することが可能になる。ブリッジ構造はまた、エッチ・ピット構造を利用しても形成することができ、この場合は自立ブリッジ構造を形成するためにBAW共振子の下の基板、もしくは材料層にピットをエッチングする必要がある。
110 底部電極
120 上部電極
200 格子サブ構造
302a 第1受信機フィルタ・バンク
302b 第2受信機フィルタ・バンク
302c 第2送信機フィルタ・バンク
302d 第1送信機フィルタ・バンク
601 アンテナ
605 受信増幅器
606 送信増幅器
610 ミキサ
615 変調器
620 発振器ブロック
630 受信ブロック
635 送信ブロック
640 制御ブロック
650 スピーカ
652 表示装置
Claims (7)
- 第1信号線および第2信号線を備える第1ポートと;
第1信号線および第2信号線を備える第2ポートと;
前記第1ポートの前記第1信号線を前記第2ポートの前記第1信号線に接続する第1共振子と;
前記第1ポートの前記第2信号線を前記第2ポートの前記第2信号線に接続する第2共振子と;
前記第1ポートの前記第1信号線を前記第2ポートの前記第2信号線に接続する第3共振子と;
前記第1ポートの前記第2信号線を前記第2ポートの前記第1信号線に接続する第4共振子と;
を有し、前記第1〜第4共振子はいずれもバルク音波共振子であり、前記第1及び第2共振子は第1の面積を有し、前記第3及び第4共振子は第2の面積を有し、前記第1の面積は前記第2の面積よりも大きい、フィルタ。 - 前記第2ポートの前記第1信号線を、別のポートの第1信号線に接続する第5共振子と;
前記第2ポートの前記第2信号線を、前記別のポートの第2信号線に接続する第6共振子と;
前記第2ポートの前記第1信号線を、前記別のポートの前記第2信号線に接続する第7共振子と;
前記第2ポートの前記第2信号線を、前記別のポートの前記第1信号線に接続する第8共振子と;
を有し、前記第5〜第8共振子はいずれもバルク音波共振子であり、前記第1〜第8共振子は、前記第1ポートと前記別のポートとの間で2つの格子フィルタのカスケード構造を形成する、請求項1に記載のフィルタ。 - 前記第5共振子は、前記第6〜第8共振子と同じ面積を有する、請求項2に記載のフィルタ。
- 前記第5共振子は前記第6共振子と同じ面積を有し、
前記第7共振子は前記第8共振子と同じ面積を有するが、前記第5及び第6共振子とは違う面積を有する、
請求項2に記載のフィルタ。 - 前記第1〜第8共振子は、共振子の基板ウェーハを覆うパターン化されていない圧電層を有する、請求項2から4のいずれか1項に記載のフィルタ。
- 前記第1〜第8共振子のために、パターン化されていない音響ミラーによる分離構造を有する、請求項5に記載のフィルタ。
- 請求項1から6のいずれかに記載のフィルタを有する移動通信手段。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI982824A FI113211B (fi) | 1998-12-30 | 1998-12-30 | Balansoitu suodatinrakenne ja matkaviestinlaite |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11375291A Division JP2000232334A (ja) | 1998-12-30 | 1999-12-28 | フィルタ構造 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011072047A true JP2011072047A (ja) | 2011-04-07 |
Family
ID=8553216
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11375291A Pending JP2000232334A (ja) | 1998-12-30 | 1999-12-28 | フィルタ構造 |
JP2011004509A Pending JP2011072047A (ja) | 1998-12-30 | 2011-01-13 | フィルタ構造 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11375291A Pending JP2000232334A (ja) | 1998-12-30 | 1999-12-28 | フィルタ構造 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6278342B1 (ja) |
EP (2) | EP2299594A1 (ja) |
JP (2) | JP2000232334A (ja) |
CN (1) | CN1160853C (ja) |
FI (1) | FI113211B (ja) |
Cited By (1)
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JP2017060077A (ja) * | 2015-09-18 | 2017-03-23 | セイコーエプソン株式会社 | 振動子及びその製造方法 |
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- 1999-12-30 CN CNB991275144A patent/CN1160853C/zh not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
EP1017170A3 (en) | 2003-01-02 |
EP2299594A1 (en) | 2011-03-23 |
US6278342B1 (en) | 2001-08-21 |
FI982824A (fi) | 2000-07-01 |
FI113211B (fi) | 2004-03-15 |
JP2000232334A (ja) | 2000-08-22 |
EP1017170A2 (en) | 2000-07-05 |
CN1258960A (zh) | 2000-07-05 |
FI982824A0 (fi) | 1998-12-30 |
CN1160853C (zh) | 2004-08-04 |
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