JP2011063848A5 - - Google Patents

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Publication number
JP2011063848A5
JP2011063848A5 JP2009215414A JP2009215414A JP2011063848A5 JP 2011063848 A5 JP2011063848 A5 JP 2011063848A5 JP 2009215414 A JP2009215414 A JP 2009215414A JP 2009215414 A JP2009215414 A JP 2009215414A JP 2011063848 A5 JP2011063848 A5 JP 2011063848A5
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JP
Japan
Prior art keywords
film forming
computer
nickel
forming apparatus
program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2009215414A
Other languages
English (en)
Japanese (ja)
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JP2011063848A (ja
JP5225957B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2009215414A external-priority patent/JP5225957B2/ja
Priority to JP2009215414A priority Critical patent/JP5225957B2/ja
Priority to US13/054,361 priority patent/US20120164328A1/en
Priority to KR1020107026851A priority patent/KR101362176B1/ko
Priority to PCT/JP2010/064573 priority patent/WO2011033917A1/ja
Priority to TW099131351A priority patent/TWI404822B/zh
Publication of JP2011063848A publication Critical patent/JP2011063848A/ja
Publication of JP2011063848A5 publication Critical patent/JP2011063848A5/ja
Publication of JP5225957B2 publication Critical patent/JP5225957B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009215414A 2009-09-17 2009-09-17 成膜方法および記憶媒体 Expired - Fee Related JP5225957B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009215414A JP5225957B2 (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体
US13/054,361 US20120164328A1 (en) 2009-09-17 2010-08-26 Film formation method and storage medium
KR1020107026851A KR101362176B1 (ko) 2009-09-17 2010-08-27 성막 방법 및 기억 매체
PCT/JP2010/064573 WO2011033917A1 (ja) 2009-09-17 2010-08-27 成膜方法および記憶媒体
TW099131351A TWI404822B (zh) 2009-09-17 2010-09-16 Film forming method and memory media (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009215414A JP5225957B2 (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Publications (3)

Publication Number Publication Date
JP2011063848A JP2011063848A (ja) 2011-03-31
JP2011063848A5 true JP2011063848A5 (https=) 2011-05-19
JP5225957B2 JP5225957B2 (ja) 2013-07-03

Family

ID=43758526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009215414A Expired - Fee Related JP5225957B2 (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Country Status (5)

Country Link
US (1) US20120164328A1 (https=)
JP (1) JP5225957B2 (https=)
KR (1) KR101362176B1 (https=)
TW (1) TWI404822B (https=)
WO (1) WO2011033917A1 (https=)

Families Citing this family (25)

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Publication number Priority date Publication date Assignee Title
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US8278224B1 (en) * 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5725454B2 (ja) * 2011-03-25 2015-05-27 株式会社アルバック ＮｉＳｉ膜の形成方法、シリサイド膜の形成方法、シリサイドアニール用金属膜の形成方法、真空処理装置、及び成膜装置
JP5826698B2 (ja) 2011-04-13 2015-12-02 株式会社アルバック Ｎｉ膜の形成方法
JP5661006B2 (ja) * 2011-09-02 2015-01-28 東京エレクトロン株式会社 ニッケル膜の成膜方法
JP5916744B2 (ja) * 2011-10-07 2016-05-11 気相成長株式会社 コバルト系膜形成方法
JP5806912B2 (ja) * 2011-11-08 2015-11-10 株式会社アルバック 液体原料の気化方法
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
JP5917351B2 (ja) * 2012-09-20 2016-05-11 東京エレクトロン株式会社 金属膜の成膜方法
US20140206190A1 (en) * 2013-01-23 2014-07-24 International Business Machines Corporation Silicide Formation in High-Aspect Ratio Structures
JP6308584B2 (ja) * 2013-02-28 2018-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
JP6559107B2 (ja) 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
US11499222B2 (en) * 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
CN113728415B (zh) 2019-04-19 2025-05-16 朗姆研究公司 原子层沉积期间的快速冲洗清扫
JP7161767B2 (ja) 2019-04-22 2022-10-27 気相成長株式会社 形成材料、形成方法、及び新規化合物
JP7332211B2 (ja) * 2019-04-22 2023-08-23 気相成長株式会社 新規化合物および製造方法
KR102707825B1 (ko) * 2019-04-23 2024-09-24 삼성전자주식회사 코발트 전구체, 이를 이용한 코발트 함유막의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
US12315466B2 (en) 2023-04-26 2025-05-27 JoysonQuin Automotive Systems North America, LLC Front-lit user interface

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231541A (ja) * 1988-07-20 1990-02-01 Nec Corp 複合電子交換機
US6387803B2 (en) * 1997-01-29 2002-05-14 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US7105434B2 (en) * 1999-10-02 2006-09-12 Uri Cohen Advanced seed layery for metallic interconnects
CN1726303B (zh) * 2002-11-15 2011-08-24 哈佛学院院长等 使用脒基金属的原子层沉积
WO2008008319A2 (en) * 2006-07-10 2008-01-17 President And Fellows Of Harvard College Selective sealing of porous dielectric materials
JP2008031541A (ja) * 2006-07-31 2008-02-14 Tokyo Electron Ltd Ｃｖｄ成膜方法およびｃｖｄ成膜装置
AU2008347088A1 (en) * 2007-04-09 2009-07-16 President And Fellows Of Harvard College Cobalt nitride layers for copper interconnects and methods for forming them
JP2011063849A (ja) * 2009-09-17 2011-03-31 Tokyo Electron Ltd 成膜方法および記憶媒体

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