JP2011060877A - Support body for substrate and substrate storage container - Google Patents

Support body for substrate and substrate storage container Download PDF

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JP2011060877A
JP2011060877A JP2009206704A JP2009206704A JP2011060877A JP 2011060877 A JP2011060877 A JP 2011060877A JP 2009206704 A JP2009206704 A JP 2009206704A JP 2009206704 A JP2009206704 A JP 2009206704A JP 2011060877 A JP2011060877 A JP 2011060877A
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support
substrate
support piece
semiconductor wafer
piece
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Kazumasa Onuki
和正 大貫
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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<P>PROBLEM TO BE SOLVED: To provide a support body for a substrate and a substrate storage container such that a thin film has its peeling or cracking due to contacting with a support piece suppressed, process as designed or the like can be performed on a substrate, and contamination of the substrate and a decrease in yield of a product can be prevented. <P>SOLUTION: The support body for the substrate includes: a pair of support frames 41 which face each other across a semiconductor wafer 1 having a metal thin film laminated from a top surface to a peripheral edge of a reverse surface; and a plurality of support pieces 46 formed on the respective support frames 41 and put along a side part peripheral edge of the semiconductor wafer 1. The semiconductor wafer 1 is supported horizontally by the plurality of support pieces 46. Each of the support pieces 46 is divided into a front part support piece 47 formed at a front part of the support frame 41 and a rear part support piece 51 formed at a rear part of the support frame 41 to be positioned behind the front part support piece 47, and support projection parts 60 are formed on the front part support piece 47 and rear part support piece 51. Each of the support projection parts 60 has its top surface partially curved to come into contact with the reverse surface of the semiconductor wafer 1, and also has the remaining part of the top surface formed into a slope surface which is not in contact with the reverse surface of the semiconductor wafer 1. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、半導体ウェーハ、ガラスウェーハ、マスクガラス等からなる基板を支持する基板用支持体及び基板収納容器に関するものである。   The present invention relates to a substrate support for supporting a substrate made of a semiconductor wafer, a glass wafer, a mask glass or the like, and a substrate storage container.

従来の基板収納容器は、半導体ウェーハ1を収納可能なフロントオープンボックスタイプの容器本体と、この容器本体の開口した正面を開閉する蓋体と、容器本体の内部両側に配設されて半導体ウェーハ1を支持する基板用支持体とを備え、加工が施された半導体ウェーハ1を一時的に収納したり、保管したり、搬送する(特許文献1、2参照)。   A conventional substrate storage container includes a front open box type container main body that can store a semiconductor wafer 1, a lid that opens and closes the front surface of the container main body, and both sides inside the container main body. The semiconductor wafer 1 that has been processed is temporarily stored, stored, or transported (see Patent Documents 1 and 2).

半導体ウェーハ1は、例えばφ300mmの丸いシリコンウェーハからなり、全表面から裏面2の周縁にかけて回路パターンの配線形成用の金属薄膜3が積層加工された(図7参照)後、所定の加工や処理が施される。また、基板用支持体は、容器本体の内側、換言すれば、容器本体の側壁内面に一体成形されたり、あるいは容器本体とは別体に成形されて後付けされ、容器本体の内方向に板形の支持片を突出させて半導体ウェーハ1の側部周縁(エッジ)やその金属薄膜3に接触させ、半導体ウェーハ1を水平に支持するよう機能する。   The semiconductor wafer 1 is made of, for example, a round silicon wafer having a diameter of 300 mm. After the metal thin film 3 for forming a circuit pattern wiring is laminated from the entire surface to the periphery of the back surface 2 (see FIG. 7), predetermined processing and processing are performed. Applied. Further, the substrate support is formed integrally with the inside of the container body, in other words, on the inner surface of the side wall of the container body, or formed separately from the container body and attached later, and is formed in a plate shape inward of the container body. The support piece is protruded and brought into contact with the side peripheral edge (edge) of the semiconductor wafer 1 or the metal thin film 3 to function to support the semiconductor wafer 1 horizontally.

ところで近年、半導体部品の微細化や回路パターンの配線の狭ピッチ化が進んでいるが、このような技術的な動向に鑑み、有機物の付着や発塵により半導体ウェーハ1が汚染しないよう、半導体ウェーハ1と基板用支持体との接触面積を減少させる様々な方法が検討され、提案されている。
例えば、支持片を先細りに形成してその半導体ウェーハ1の側部周縁や金属薄膜3に接触する表面を傾斜させ、半導体ウェーハ1と支持片との接触面積を減少させる方法等が提示されている。
By the way, in recent years, semiconductor components have been miniaturized and circuit pattern wiring pitches have been reduced. In view of such technical trends, semiconductor wafers 1 are prevented from being contaminated by the adhesion of organic substances and dust generation. Various methods for reducing the contact area between the substrate 1 and the substrate support have been studied and proposed.
For example, a method of reducing the contact area between the semiconductor wafer 1 and the support piece by forming the support piece in a tapered manner and inclining the side edge of the semiconductor wafer 1 or the surface in contact with the metal thin film 3 is proposed. .

特開2005‐64378号公報JP 2005-64378 A 特開2006‐324327号公報JP 2006-324327 A

従来における基板収納容器は、以上のように構成され、半導体ウェーハ1の全表面から裏面2の周縁にかけて回路パターンの配線形成用の金属薄膜3が積層されている場合、半導体ウェーハ1の側部周縁の金属薄膜3に基板用支持体の支持片が単に接触するので、金属薄膜3が支持片との接触に伴い、剥離したり、外部から衝撃が作用することでマイクロクラックが発生し、金属薄膜3が剥がれやすくなるおそれがある。   The conventional substrate storage container is configured as described above, and when the metal thin film 3 for forming the wiring of the circuit pattern is laminated from the entire surface of the semiconductor wafer 1 to the periphery of the back surface 2, the peripheral edge of the semiconductor wafer 1 is laminated. Since the support piece of the substrate support is simply in contact with the metal thin film 3, the metal thin film 3 is peeled off due to the contact with the support piece, or a microcrack is generated due to an external impact. 3 may be easily peeled off.

金属薄膜3が剥離したり、マイクロクラックが発生すると、金属薄膜3の剥離部やマイクロクラックの発生部に設計通りの加工や処理を後から施すことができず、大きな問題が生じる。また、剥がれ落ちた金属薄膜3等により半導体ウェーハ1の汚染を招き、製品の歩留まりが低下してしまうこととなる。   When the metal thin film 3 is peeled off or a microcrack is generated, processing and processing as designed cannot be performed later on the peeled portion of the metal thin film 3 or the microcrack generating portion, resulting in a serious problem. In addition, the metal thin film 3 and the like that have been peeled off cause contamination of the semiconductor wafer 1 and the product yield decreases.

本発明は上記に鑑みなされたもので、薄膜が支持片と接触して剥離したり、クラックが発生するのを抑制し、基板に設計通りの加工等を施すことができ、しかも、基板の汚染や製品の歩留まりが低下するのを防ぐことができる基板用支持体及び基板収納容器を提供することを目的としている。   The present invention has been made in view of the above, and it is possible to prevent the thin film from coming into contact with the support piece and to generate cracks, and to perform processing as designed on the substrate, and to contaminate the substrate. Another object of the present invention is to provide a substrate support and a substrate storage container that can prevent a decrease in product yield.

本発明においては上記課題を解決するため、表面から裏面の周縁にかけて回路用の薄膜が積層された基板を挟んで対向する一対の支持体と、この一対の支持体にそれぞれ形成されて基板の側部周縁に沿う複数の支持片とを備え、この複数の支持片に基板を略水平に支持させるものであって、
支持片を、支持体の前部に形成される前部支持片と、支持体の後部に形成されて前部支持片の後方に位置する後部支持片とに分割し、これら前部支持片と後部支持片とに支持突部をそれぞれ形成し、支持突部の表面の一部を湾曲させて基板の裏面に接触可能とするとともに、支持突部の表面の残部を基板の裏面に非接触の傾斜面に形成したことを特徴としている。
In the present invention, in order to solve the above-described problem, a pair of supports opposed to each other with a substrate on which a thin film for circuit is laminated from the front surface to the periphery of the back surface, and a pair of supports formed on the pair of supports, respectively Comprising a plurality of support pieces along the periphery of the part, and supporting the substrate substantially horizontally on the plurality of support pieces,
The support piece is divided into a front support piece formed at the front part of the support body, and a rear support piece formed at the rear part of the support body and positioned behind the front support piece. A support protrusion is formed on each of the rear support pieces, and a part of the surface of the support protrusion is curved so that the back surface of the substrate can be contacted, and the rest of the surface of the support protrusion is not contacted with the back surface of the substrate. It is formed on an inclined surface.

なお、支持体は、間隔をおいて対向する上下一対の横桟と、この一対の横桟の両端部間に架設される一対の縦桟とを備え、一対の横桟の間に屈曲連結片を架設して支持片の前部支持片と後部支持片との間に介在させることができる。
また、支持片の前部支持片と後部支持片との表面に支持突部をそれぞれ0.5〜3mmの高さで形成し、この支持突部を基板の周縁から1mm以上内側の裏面に接触させ、前部支持片あるいは後部支持片の表面と支持突部の傾斜面との角度を10〜30°とすることができる。
The support includes a pair of upper and lower horizontal bars facing each other with a space therebetween, and a pair of vertical bars installed between both ends of the pair of horizontal bars, and a bent connecting piece between the pair of horizontal bars. And can be interposed between the front support piece and the rear support piece of the support piece.
Further, support protrusions are formed on the surfaces of the front support piece and the rear support piece of the support piece at a height of 0.5 to 3 mm, respectively, and the support protrusions are in contact with the back surface 1 mm or more inside from the peripheral edge of the substrate. Thus, the angle between the surface of the front support piece or the rear support piece and the inclined surface of the support protrusion can be set to 10 to 30 °.

また、本発明においては上記課題を解決するため、基板を収納する容器本体の開口した正面を蓋体により開閉するものであって、
容器本体の内部両側に請求項1又は2記載の基板用支持体を設けたことを特徴としている。
Further, in the present invention, in order to solve the above-described problem, the open front of the container body for storing the substrate is opened and closed by a lid,
The substrate support according to claim 1 or 2 is provided on both inner sides of the container main body.

ここで、特許請求の範囲における基板は、表面から裏面の周縁にかけて回路用の薄膜が積層されるのであれば、少なくともφ300、450、600mmの半導体ウェーハ、ガラスウェーハ、マスクガラスが含まれる。支持体は、中空の枠形でも良いし、板形等でも良い。また、容器本体の内部両側に基板用支持体を設ける場合には、容器本体の内部両側に基板用支持体を着脱自在に取り付けても良いし、可能であれば、基板用支持体を成形した後、容器本体用の金型にインサートして容器本体と一体成形しても良い。容器本体は、透明、不透明、半透明のいずれでも良い。   Here, the substrate in the claims includes at least φ300, 450, and 600 mm semiconductor wafers, glass wafers, and mask glass as long as a circuit thin film is laminated from the front surface to the periphery of the back surface. The support may have a hollow frame shape or a plate shape. Further, when the substrate support is provided on both sides of the container body, the substrate support may be detachably attached to both sides of the container body. If possible, the substrate support is formed. Thereafter, it may be inserted into a container body mold and integrally formed with the container body. The container body may be transparent, opaque, or translucent.

本発明によれば、基板用支持体の支持片の支持突部、すなわち、前部支持片と後部支持片の各支持突部が基板の周縁ではなく、基板の周縁から内側の裏面に接触するので、基板周縁の薄膜に基板用支持体の支持突部が非接触となる。この支持突部の非接触により、基板を覆う薄膜が支持片との接触に伴い、剥離したり、外部から衝撃が作用することでクラックが発生し、薄膜が剥がれやすくなるおそれを抑制することができる。   According to the present invention, the support protrusions of the support piece of the substrate support, that is, the support protrusions of the front support piece and the rear support piece are not in contact with the peripheral edge of the substrate but are in contact with the inner back surface from the peripheral edge of the substrate. Therefore, the support protrusion of the substrate support is not in contact with the thin film on the periphery of the substrate. This non-contact of the support protrusions suppresses the possibility that the thin film covering the substrate is peeled off in contact with the support piece, or cracks are generated due to impact from the outside and the thin film is easily peeled off. it can.

本発明によれば、薄膜が支持片と接触して剥離したり、クラックが発生するのを抑制することができるという効果がある。また、基板に設計通りの加工や処理等を施すことができ、基板の汚染や製品の歩留まりが低下するのを有効に防ぐことができるという効果がある。   According to the present invention, there is an effect that it is possible to prevent the thin film from coming into contact with the support piece and peeling or cracking. In addition, the substrate can be processed and processed as designed, and it is possible to effectively prevent the substrate from being contaminated and the product yield from being lowered.

また、支持突部を基板の周縁から1mm以上内側の裏面に接触させれば、支持突部が基板周縁の薄膜に接触するのを防ぐことができる。また、支持片の前部支持片と後部支持片との表面に支持突部をそれぞれ0.5〜3mmの高さで形成し、前部支持片あるいは後部支持片の表面と支持突部の傾斜面との角度を10〜30°とすれば、支持突部と基板周縁の薄膜との接触を防止することができ、しかも、支持突部を含む基板用支持体を成形する際、金型から基板用支持体を容易に脱型することができる。   Further, if the support protrusion is brought into contact with the back surface 1 mm or more inside from the peripheral edge of the substrate, the support protrusion can be prevented from contacting the thin film on the peripheral edge of the substrate. Further, support protrusions are formed at a height of 0.5 to 3 mm on the surfaces of the front support piece and the rear support piece of the support piece, respectively, and the front support piece or the surface of the rear support piece and the inclination of the support protrusion are formed. If the angle with the surface is 10 to 30 °, the contact between the support protrusion and the thin film on the periphery of the substrate can be prevented, and when the substrate support including the support protrusion is formed, from the mold The substrate support can be easily removed.

本発明に係る基板収納容器の実施形態を模式的に示す斜視説明図である。It is a perspective explanatory view showing typically an embodiment of a substrate storage container concerning the present invention. 本発明に係る基板収納容器の実施形態における容器本体から蓋体を取り外した状態を模式的に示す斜視説明図である。It is a perspective explanatory view showing typically the state where a lid was removed from a container main part in an embodiment of a substrate storage container concerning the present invention. 図2の断面説明図である。FIG. 3 is a cross-sectional explanatory view of FIG. 2. 本発明に係る基板用支持体の実施形態を模式的に示す斜視説明図である。It is a perspective explanatory view showing typically an embodiment of a substrate support concerning the present invention. 本発明に係る基板用支持体の実施形態における支持片と支持突部とを模式的に示す説明図である。It is explanatory drawing which shows typically the support piece and support protrusion in embodiment of the support body for substrates which concerns on this invention. 本発明に係る基板用支持体の実施形態における支持突部の支持状態を模式的に示す要部拡大説明図である。It is a principal part expansion explanatory drawing which shows typically the support state of the support protrusion in embodiment of the support body for substrates which concerns on this invention. 半導体ウェーハの表面から裏面の周縁にかけて回路パターンの配線形成用の金属薄膜を積層した状態を模式的に示す断面説明図である。It is a section explanatory view showing typically the state where the metal thin film for circuit pattern wiring formation was laminated from the surface of the semiconductor wafer to the peripheral edge of the back surface.

以下、図面を参照して本発明の実施形態を説明すると、本実施形態における基板収納容器は、図1ないし図7に示すように、薄く撓みやすい半導体ウェーハ1を収納可能な容器本体10と、この容器本体10の開口した正面19を着脱自在に開閉する蓋体30と、容器本体10の内部両側に配設される基板用支持体40とを備え、この基板用支持体40の湾曲した支持片46を、前部支持片47と後部支持片51とに分割してそれら47・51の表面には半導体ウェーハ1用の支持突部60をそれぞれ形成するようにしている。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. As shown in FIGS. 1 to 7, a substrate storage container in the present embodiment includes a container body 10 capable of storing a thin and flexible semiconductor wafer 1, and The container body 10 is provided with a lid 30 that removably opens and closes the opened front face 19 and a substrate support 40 disposed on both sides of the container body 10, and the substrate support 40 is curvedly supported. The piece 46 is divided into a front support piece 47 and a rear support piece 51, and support protrusions 60 for the semiconductor wafer 1 are formed on the surfaces of the 47 and 51, respectively.

半導体ウェーハ1は、図7に示すように、例えば925μmの厚さを有するφ450mmの大口径のシリコンウェーハからなり、周縁に位置合わせや識別用の図示しないノッチが平面半円形に切り欠かれており、容器本体10に複数枚(具体的には25枚等)が所定のピッチで整列して水平に収納される。この半導体ウェーハ1の全表面から裏面2の周縁にかけては回路パターンの配線形成用の金属薄膜3が積層加工され、その後、後工程で所定の加工や処理が順次施される。   As shown in FIG. 7, the semiconductor wafer 1 is made of, for example, a silicon wafer having a large diameter of φ450 mm having a thickness of 925 μm, and a notch (not shown) for alignment and identification is cut out in a planar semicircular shape on the periphery. A plurality of sheets (specifically, 25 sheets, etc.) are stored in the container main body 10 in a horizontal alignment with a predetermined pitch. A metal thin film 3 for wiring formation of a circuit pattern is laminated from the entire front surface of the semiconductor wafer 1 to the periphery of the back surface 2, and then predetermined processing and processing are sequentially performed in a subsequent process.

容器本体10と蓋体30とは、所定の樹脂を含有する成形材料により複数の部品がそれぞれ射出成形され、この複数の部品の組み合わせで構成される。この成形材料の所定の樹脂としては、例えば力学的性質や耐熱性等に優れるポリカーボネート、ポリエーテルエーテルケトン、ポリエーテルイミド、液晶ポリマー、あるいは環状オレフィン樹脂等があげられる。これらの樹脂には、カーボン、カーボン繊維、金属繊維、カーボンナノチューブ、導電性ポリマー、帯電防止剤、又は難燃剤等が必要に応じて選択的に添加される。   The container body 10 and the lid body 30 are each formed by combining a plurality of parts by injection molding a plurality of parts from a molding material containing a predetermined resin. Examples of the predetermined resin of the molding material include polycarbonate, polyether ether ketone, polyether imide, liquid crystal polymer, and cyclic olefin resin that are excellent in mechanical properties and heat resistance. Carbon, carbon fiber, metal fiber, carbon nanotube, conductive polymer, antistatic agent, flame retardant, or the like is selectively added to these resins as necessary.

容器本体10は、図1ないし図3に示すように、成形材料により不透明のフロントオープンボックスタイプに形成され、開口した横長の正面19を水平横方向に向けた状態で半導体加工装置や気体置換装置上に位置決めして搭載されたり、洗浄槽の洗浄液により洗浄される。   As shown in FIGS. 1 to 3, the container body 10 is formed into an opaque front open box type using a molding material, and a semiconductor processing device or a gas replacement device in a state where the horizontally long front face 19 is directed horizontally. It is positioned and mounted on top, or cleaned with a cleaning solution in a cleaning tank.

容器本体10は、底板11の四隅部付近に円筒形のフィルタボスがそれぞれ穿孔して配設され、この複数のフィルタボスに給気用フィルタ12と排気用フィルタ13とがそれぞれOリングを介し着脱自在に嵌合される。これら給気用フィルタ12と排気用フィルタ13とは、気体置換装置に接続されて容器本体10内の空気を窒素ガスに置換し、半導体ウェーハ1の表面酸化等を防止するよう機能する。   The container main body 10 is provided with cylindrical filter bosses that are perforated in the vicinity of the four corners of the bottom plate 11, and an air supply filter 12 and an exhaust filter 13 are respectively attached to and detached from the plurality of filter bosses via O-rings. Fits freely. The air supply filter 12 and the exhaust filter 13 are connected to a gas replacement device and function to replace air in the container body 10 with nitrogen gas and prevent surface oxidation of the semiconductor wafer 1 and the like.

容器本体10の底板11の前部両側と後部中央とには、基板収納容器、具体的には容器本体10を位置決めする位置決め具がそれぞれ螺着される。また、容器本体10の底板11には、複数の給気用フィルタ12、排気用フィルタ13、及び位置決め具をそれぞれ露出させるボトムプレート14が水平に覆着され、このボトムプレート14の後部には、複数の識別孔が穿孔されており、この複数の識別孔に着脱自在の情報識別パッドが選択的に挿入されることにより、基板収納容器の種類や半導体ウェーハ1の枚数等が半導体加工装置に識別される。   A substrate storage container, specifically, a positioning tool for positioning the container body 10 is screwed to both the front side and the rear center of the bottom plate 11 of the container body 10. The bottom plate 11 of the container body 10 is horizontally covered with a plurality of air supply filters 12, exhaust filters 13, and a bottom plate 14 for exposing the positioning tool. A plurality of identification holes are perforated, and a detachable information identification pad is selectively inserted into the plurality of identification holes, whereby the type of the substrate storage container, the number of semiconductor wafers 1 and the like are identified to the semiconductor processing apparatus. Is done.

容器本体10の天板15の中央部には、工場の天井搬送機構に把持される搬送用のトップフランジ16が水平に螺着されており、容器本体10の背面壁の中央部には、必要に応じ、透明の覗き窓が二色成形法等により縦長に形成される。この覗き窓を必要に応じて形成した場合には、容器本体10の内部を外部から視覚的に観察・把握することができる。   A top flange 16 for transporting gripped by the factory ceiling transport mechanism is horizontally threaded at the center of the top plate 15 of the container body 10, and is necessary at the center of the back wall of the container body 10. Accordingly, a transparent viewing window is formed in a vertically long shape by a two-color molding method or the like. When this viewing window is formed as necessary, the inside of the container body 10 can be visually observed and grasped from the outside.

容器本体10の両側壁17の内面には、基板用支持体40を装着するための嵌合部や取付爪が配設され、両側壁17の表面(外面)には、搬送用のレール18が前後方向にそれぞれ伸長形成される。また、容器本体10の正面19の周縁には、外方向に張り出すリムフランジ20が膨出形成され、このリムフランジ20の内周面の上下両側部には、蓋体30の施錠機構34用の係止穴21がそれぞれ穿孔されており、リムフランジ20内に着脱自在の蓋体30が蓋体開閉装置により嵌合される。   The inner surface of both side walls 17 of the container body 10 is provided with fitting portions and mounting claws for mounting the substrate support 40, and on the surface (outer surface) of both side walls 17, a transport rail 18 is provided. Each is formed to extend in the front-rear direction. Further, a rim flange 20 projecting outward is formed on the peripheral edge of the front surface 19 of the container body 10, and the locking mechanism 34 of the lid 30 is formed on both upper and lower sides of the inner peripheral surface of the rim flange 20. Are respectively perforated, and a detachable lid 30 is fitted into the rim flange 20 by a lid opening / closing device.

蓋体30は、図1に示すように、容器本体10の開口した正面19内に嵌合する横長の筐体31と、この筐体31の開口した表面(正面)を被覆する表面プレート32と、これら筐体31と表面プレート32との間に介在される施錠用の施錠機構34とを備えて構成される。筐体31は、基本的には枠形の周壁を備えた浅底の断面略皿形に形成され、周壁の上下両側部には、施錠機構34用の貫通孔がそれぞれ穿孔されており、各貫通孔がリムフランジ20の係止穴21に対向する。   As shown in FIG. 1, the lid 30 includes a horizontally long casing 31 that fits in the opened front face 19 of the container body 10, and a surface plate 32 that covers the opened surface (front face) of the casing 31. A locking mechanism 34 for locking interposed between the casing 31 and the surface plate 32 is provided. The casing 31 is basically formed in a shallow, substantially cross-sectional shape with a frame-shaped peripheral wall, and through holes for the locking mechanism 34 are drilled in the upper and lower sides of the peripheral wall. The through hole faces the locking hole 21 of the rim flange 20.

筐体31の裏面両側部には、筐体31に剛性を付与して反りを防止するリブがそれぞれ一体形成され、各リブには、半導体ウェーハ1の前部周縁を弾発的に保持するフロントリテーナがそれぞれ着脱自在に装着される。また、筐体31の裏面周縁部には枠形の嵌合溝が形成され、この嵌合溝には、容器本体10のリムフランジ20との間に複数の貫通孔を挟むリップタイプのガスケットが密嵌されており、このガスケットがリムフランジ20内に圧接する。   On both sides of the rear surface of the housing 31, ribs that give rigidity to the housing 31 and prevent warping are integrally formed, and each rib is a front that elastically holds the front periphery of the semiconductor wafer 1. Each retainer is detachably mounted. In addition, a frame-shaped fitting groove is formed on the peripheral edge of the back surface of the housing 31, and a lip type gasket that sandwiches a plurality of through holes between the rim flange 20 of the container body 10 is formed in the fitting groove. The gasket is tightly fitted, and the gasket is pressed into the rim flange 20.

ガスケットは、例えば耐熱性や耐候性等に優れるフッ素ゴム、シリコーンゴム、各種の熱可塑性エラストマー(例えば、オレフィン系、ポリエステル系、ポリスチレン系等)等を成形材料として弾性変形可能な枠形に成形され、外周面には、容器本体10の正面19から背面壁方向に傾斜しながら指向する先細りの屈曲突片がエンドレスに一体形成されており、この屈曲突片がリムフランジ20の内周面に屈曲しながら圧接し、気密性を確保する。   The gasket is molded into a frame shape that can be elastically deformed using, as a molding material, fluorine rubber, silicone rubber, various thermoplastic elastomers (for example, olefin, polyester, polystyrene, etc.) that have excellent heat resistance and weather resistance, for example. On the outer peripheral surface, a tapered bent projecting piece that is inclined while being inclined from the front surface 19 of the container main body 10 toward the rear wall is integrally formed, and this bent projecting piece is bent to the inner peripheral surface of the rim flange 20. While pressing, ensure airtightness.

表面プレート32は、筐体31の開口した表面に対応するよう横長の平板に形成され、左右両側部には、施錠機構34用の操作口33がそれぞれ穿孔される。また、施錠機構34は、表面プレート32の操作口33を貫通した蓋体開閉装置の操作ピンに回転操作される左右一対の回転プレートと、各回転プレートの回転に伴い上下方向にスライドする複数のスライドプレートと、各スライドプレートのスライドに伴い筐体31の貫通孔から突出してリムフランジ20の係止穴21に係止する複数の係止爪とを備え、容器本体10の正面19に嵌合した蓋体30を施錠して脱落を有効に防止する。   The surface plate 32 is formed in a horizontally long flat plate so as to correspond to the opened surface of the housing 31, and an operation port 33 for the locking mechanism 34 is formed in each of the left and right sides. The locking mechanism 34 includes a pair of left and right rotating plates that are rotated by operating pins of the lid opening / closing device that penetrates the operation port 33 of the surface plate 32, and a plurality of sliding plates that slide in the vertical direction as each rotating plate rotates. A slide plate and a plurality of locking claws that protrude from the through-holes of the housing 31 as the slide plates slide and lock into the locking holes 21 of the rim flange 20 are fitted to the front surface 19 of the container body 10. The lid 30 is locked to effectively prevent dropping.

基板用支持体40は、所定の樹脂、例えば滑り性に優れるポリブチレンテレフタレート、ポリエーテルエーテルケトン、ポリカーボネート、あるいはCOP等を含有する成形材料により射出成形される。この成形材料の樹脂には、カーボン繊維、金属繊維、カーボンナノチューブ、導電性ポリマー、導電性の付与された樹脂等が必要に応じ選択的に添加される。   The substrate support 40 is injection-molded with a molding material containing a predetermined resin, for example, polybutylene terephthalate, polyether ether ketone, polycarbonate, COP or the like having excellent slipperiness. Carbon fiber, metal fiber, carbon nanotube, conductive polymer, resin imparted with conductivity and the like are selectively added to the resin of the molding material as necessary.

基板用支持体40は、図2ないし図6に示すように、容器本体10の両側壁17内面にそれぞれ対向して半導体ウェーハ1を挟む左右一対の支持枠41と、この一対の支持枠41から上下に並んだ状態で突出し、半導体ウェーハ1の側部周縁に沿いながら水平に支持する複数の支持片46とを備え、各支持片46を、支持枠41の前部から水平横方向に突出して半導体ウェーハ1の少なくとも側部前方の周縁を水平に支持する前部支持片47と、支持枠41の後部から水平横方向に突出して半導体ウェーハ1の少なくとも側部後方の周縁を水平に支持する後部支持片51とから形成しており、容器本体10の両側壁17内面にそれぞれ着脱自在に装着される。   As shown in FIGS. 2 to 6, the substrate support 40 includes a pair of left and right support frames 41 that sandwich the semiconductor wafer 1 so as to face the inner surfaces of the side walls 17 of the container body 10, and the pair of support frames 41. A plurality of support pieces 46 that protrude in a vertically aligned state and are horizontally supported along the side edge of the semiconductor wafer 1, and each support piece 46 protrudes horizontally from the front portion of the support frame 41. A front support piece 47 that horizontally supports at least a peripheral edge in front of the side of the semiconductor wafer 1, and a rear part that horizontally protrudes from the rear part of the support frame 41 to horizontally support at least the rear edge of the semiconductor wafer 1. The support piece 51 is detachably attached to the inner surfaces of the side walls 17 of the container body 10.

一対の支持枠41は、相対向する左右一対の支持片46により、半導体ウェーハ1を両側から水平に支持するよう機能する。各支持枠41は、間隔をおいて相対向する上下一対の横桟42と、この一対の横桟42の前後両端部間に縦に架設される一対の縦桟43とを備えた横長に形成される。   The pair of support frames 41 function to horizontally support the semiconductor wafer 1 from both sides by a pair of left and right support pieces 46 facing each other. Each support frame 41 is formed in a horizontally long shape including a pair of upper and lower horizontal bars 42 facing each other with a space therebetween, and a pair of vertical bars 43 installed vertically between the front and rear ends of the pair of horizontal bars 42. Is done.

一対の横桟42は、その中央部間に、支持枠41内を前後に区画する屈曲連結片44が縦に架設され、この屈曲連結片44が支持片46の前部支持片47と後部支持片51との間に介在する。一対の横桟42の後部間には、屈曲連結片44の後方に位置する板形の補強連結片45が選択的に縦に架設され、一対の横桟42の後部は、半導体ウェーハ1の側部後方の周縁に沿うよう容器本体10の内方向に向け徐々に屈曲される。   The pair of horizontal crosspieces 42 is provided with a bent connecting piece 44 that vertically divides the inside of the support frame 41 between the center portions thereof, and the bent connecting piece 44 supports the front support piece 47 and the rear support piece of the support piece 46. It is interposed between the pieces 51. Between the rear portions of the pair of horizontal rails 42, a plate-shaped reinforcing connection piece 45 located behind the bent connection piece 44 is selectively installed vertically, and the rear portions of the pair of horizontal rails 42 are on the side of the semiconductor wafer 1. The container body 10 is gradually bent inward along the peripheral edge of the rear part.

各横桟42の最前部には、容器本体10の側壁17内面の嵌合部に着脱自在に嵌合する取付ピンが上下方向に突出形成され、各横桟42の前部には、取付ピンの後方に低く位置する板形の位置決め取付片が上下方向に突出形成されており、この位置決め取付片が容器本体10の側壁17内面の嵌合部に着脱自在に位置決め嵌合される。また、横桟42の後部長手方向には、容器本体10内に接触する複数の高さ調整ピンが間隔をおき配列形成され、この複数の高さ調整ピンが支持枠41や複数の支持片46の上下方向の高さを適切に調整する。   At the foremost part of each crosspiece 42, a mounting pin that detachably fits into the fitting portion on the inner surface of the side wall 17 of the container body 10 is formed to project in the vertical direction. A plate-shaped positioning mounting piece positioned lower rearward is formed so as to protrude in the vertical direction, and this positioning mounting piece is detachably positioned and fitted to the fitting portion on the inner surface of the side wall 17 of the container body 10. Further, in the longitudinal direction of the rear portion of the horizontal rail 42, a plurality of height adjustment pins that contact the inside of the container body 10 are arranged at intervals, and the plurality of height adjustment pins are used as the support frame 41 and the plurality of support pieces. Adjust the vertical height of 46 appropriately.

前部の縦桟43の中央部には、容器本体10の側壁17内面の取付爪に対する取付溝が切り欠かれ、後部の縦桟43の端部には、上下方向に伸びる断面略円形の取付膨張片が一体形成されており、この取付膨張片が容器本体10内に着脱自在に固定される。取付溝は、矩形に切り欠かれ、容器本体10からの支持枠41の飛び出しを防止する。   A mounting groove for mounting claws on the inner surface of the side wall 17 of the container body 10 is cut out at the center of the front vertical beam 43, and a substantially circular cross-section extending in the vertical direction is attached to the end of the rear vertical beam 43. The expansion piece is integrally formed, and the mounting expansion piece is detachably fixed in the container body 10. The mounting groove is cut into a rectangular shape to prevent the support frame 41 from protruding from the container body 10.

各支持片46の前部支持片47は、支持枠41の前部、換言すれば、前部の縦桟43から半導体ウェーハ1の側部前方の周縁に直線的かつ水平に長く伸びる平板形の突出部48と、この突出部48の先端から半導体ウェーハ1の側部周縁に沿うよう湾曲しながら後方に伸びる平板形の屈曲部49とを備え、支持枠41との間に屈曲した平面略三角形の空洞部50が区画形成されており、屈曲部49の後端が支持枠41の屈曲連結片44に連結される。   The front support piece 47 of each support piece 46 has a flat plate shape extending linearly and horizontally long from the front portion of the support frame 41, in other words, from the front vertical rail 43 to the front edge of the side of the semiconductor wafer 1. A planar substantially triangular shape provided with a projecting portion 48 and a flat bent portion 49 that extends backward from the tip of the projecting portion 48 while being curved along the peripheral edge of the semiconductor wafer 1. The cavity 50 is partitioned and the rear end of the bent portion 49 is connected to the bent connecting piece 44 of the support frame 41.

各支持片46の後部支持片51は、半導体ウェーハ1の側部後方の周縁に沿うよう平面略半円弧形の平板に形成され、後部の縦桟43と屈曲連結片44との間に水平に架設されるとともに、補強連結片45に水平に連結支持されており、屈曲部49の後端後方に隙間をおいて隣接する。   The rear support piece 51 of each support piece 46 is formed into a flat semicircular arc-shaped flat plate along the peripheral edge of the rear side of the semiconductor wafer 1, and horizontally between the rear vertical beam 43 and the bent connecting piece 44. And is horizontally connected to and supported by the reinforcing connecting piece 45 and is adjacent to the rear end of the bent portion 49 with a gap.

各支持突部60は、図3ないし図6に示すように、基本的には略半球形あるいは略半楕球形に形成され、前部支持片47の屈曲部49前方と後部支持片51の後部の平坦な表面にそれぞれ突出形成されており、半導体ウェーハ1の裏面2に接触して水平に支持するよう機能する。この支持突部60の表面の一部61は、図5や図6に示すように、丸く湾曲して半導体ウェーハ1の周縁から1mm以上、好ましくは3mm以上内側の金属薄膜3の存在しない裏面2に点接触する。   As shown in FIGS. 3 to 6, each of the support protrusions 60 is basically formed in a substantially hemispherical shape or a substantially semielliptical shape, and is arranged in front of the bent portion 49 of the front support piece 47 and the rear portion of the rear support piece 51. Are formed so as to protrude from the flat surface of the semiconductor wafer 1 and function so as to contact the back surface 2 of the semiconductor wafer 1 and support it horizontally. As shown in FIGS. 5 and 6, a part 61 of the surface of the support projection 60 is rounded and the back surface 2 is free of the thin metal film 3 on the inner side of the semiconductor wafer 1 by 1 mm or more, preferably 3 mm or more. Point contact.

これに対し、支持突部60の表面の残部62は、同図に示すように、成形時に抜けにくいアンダーカット部になるのを防止する観点から、容器本体10の内方向から側壁17内面方向に向かうに従い徐々に下降して前部支持片47あるいは後部支持片51の表面に連なる傾斜面63に形成され、半導体ウェーハ1の裏面2に対して非接触の関係となる。   On the other hand, as shown in the figure, the remaining portion 62 on the surface of the support protrusion 60 is prevented from becoming an undercut portion that is difficult to be removed during molding, from the inner direction of the container body 10 toward the inner surface of the side wall 17. It gradually descends as it goes, and is formed on an inclined surface 63 that continues to the surface of the front support piece 47 or the rear support piece 51, and has a non-contact relationship with the back surface 2 of the semiconductor wafer 1.

支持突部60は、図5に示すように、前部支持片47と後部支持片51の表面にそれぞれ0.5〜3mmの高さhで形成され、前部支持片47あるいは後部支持片51の表面と傾斜面63との角度θが10〜30°の範囲に設定される。これは、支持突部60が0.5〜3mmの高さhで、傾斜面63の角度θが10〜30°の範囲であれば、支持突部60と半導体ウェーハ1の金属薄膜3との接触を防止することができ、しかも、支持突部60を含む基板用支持体40を金型により成形する際、金型から斜めに容易に脱型することができるからである。   As shown in FIG. 5, the support protrusion 60 is formed on the surface of the front support piece 47 and the rear support piece 51 with a height h of 0.5 to 3 mm, respectively, and the front support piece 47 or the rear support piece 51. The angle θ between the surface and the inclined surface 63 is set in the range of 10 to 30 °. If the support protrusion 60 has a height h of 0.5 to 3 mm and the angle θ of the inclined surface 63 is in the range of 10 to 30 °, the support protrusion 60 and the metal thin film 3 of the semiconductor wafer 1 This is because the contact can be prevented, and when the substrate support 40 including the support protrusion 60 is formed by a mold, it can be easily removed from the mold at an angle.

なお、前部支持片47と後部支持片51における支持突部60の少なくとも周縁部付近には、半導体ウェーハ1との接触磨耗を低減する観点から、平均表面粗さ(Ra)が15〜45μmのシボが選択的に形成される。   In addition, at least in the vicinity of the peripheral portion of the support protrusion 60 in the front support piece 47 and the rear support piece 51, the average surface roughness (Ra) is 15 to 45 μm from the viewpoint of reducing contact wear with the semiconductor wafer 1. A texture is selectively formed.

上記構成によれば、基板用支持体40の支持突部60における表面の一部61が半導体ウェーハ1の側部周縁ではなく、半導体ウェーハ1の側部周縁から1mm以上内側に離れた裏面2に点接触するので、半導体ウェーハ1の側部周縁から裏面2側に回りこんだ金属薄膜3に基板用支持体40の支持突部60が接触しなくなる。これにより、金属薄膜3が支持片46との接触に伴い、剥離したり、外部から衝撃が作用することでマイクロクラックが発生し、金属薄膜3が剥がれやすくなるおそれを実に有効に払拭することができる。   According to the above configuration, a part 61 of the surface of the support protrusion 60 of the substrate support 40 is not the side periphery of the semiconductor wafer 1 but the back surface 2 that is separated from the side periphery of the semiconductor wafer 1 by 1 mm or more inward. Because of the point contact, the support protrusion 60 of the substrate support 40 does not come into contact with the metal thin film 3 that wraps around from the peripheral edge of the semiconductor wafer 1 toward the back surface 2 side. Thereby, it is possible to effectively wipe off the possibility that the metal thin film 3 is peeled off when the metal thin film 3 comes into contact with the support piece 46 or a microcrack is generated due to an external impact, and the metal thin film 3 is easily peeled off. it can.

したがって、金属薄膜3の剥離部やマイクロクラックの発生部に設計通りの加工や処理を後から適切に施すことができ、しかも、剥がれ落ちた金属薄膜3等により半導体ウェーハ1の汚染を招いたり、製品の歩留まりが低下してしまうこともない。さらに、半導体ウェーハ1の側部周縁ではなく、側部周縁からから1mm以上内側に離れた裏面2に複数の支持突部60がそれぞれ接触するので、従来に比べ、半導体ウェーハ1の撓み量を大いに低減することができる。   Therefore, it is possible to appropriately apply the processing and processing as designed to the peeling portion of the metal thin film 3 and the generation portion of the microcrack later, and the contamination of the semiconductor wafer 1 is caused by the metal thin film 3 that has been peeled off, Product yields are not reduced. Furthermore, since the plurality of support protrusions 60 are not in contact with the peripheral edge of the semiconductor wafer 1 but on the back surface 2 separated from the side peripheral edge by 1 mm or more inward, the amount of bending of the semiconductor wafer 1 is greatly increased compared to the conventional case. Can be reduced.

なお、上記実施形態では容器本体10の側壁17内面に基板用支持体40を単に装着したが、容器本体10の側壁17内面に係止部を形成し、この係止部に基板用支持体40を着脱自在に係止させても良い。この場合、係止部は、容器本体10の側壁17内面に一体形成しても良いが、別体として成形した後、容器本体10用の金型にインサートして容器本体10の側壁17内面に一体成形しても良い。また、支持枠41の屈曲連結片44を、前部支持片47と後部支持片51の湾曲方向とは反対側等に屈曲させたり、湾曲させることができる。   In the above embodiment, the substrate support 40 is simply mounted on the inner surface of the side wall 17 of the container body 10. However, a locking portion is formed on the inner surface of the side wall 17 of the container body 10, and the substrate support 40 is formed on this locking portion. May be detachably locked. In this case, the locking portion may be integrally formed on the inner surface of the side wall 17 of the container main body 10, but after being molded as a separate body, it is inserted into a mold for the container main body 10 and is formed on the inner surface of the side wall 17 of the container main body 10. It may be integrally formed. Further, the bent connecting piece 44 of the support frame 41 can be bent or bent to the opposite side of the bending direction of the front support piece 47 and the rear support piece 51.

1 半導体ウェーハ(基板)
2 裏面
3 金属薄膜(薄膜)
10 容器本体
17 側壁
19 正面
30 蓋体
40 基板用支持体
41 支持体(支持枠)
42 横桟
43 縦桟
44 屈曲連結片
46 支持片
47 前部支持片
51 後部支持片
60 支持突部
61 表面の一部
62 表面の残部
63 傾斜面
h 支持突部の高さ
θ 傾斜面の角度
1 Semiconductor wafer (substrate)
2 Back 3 Metal thin film (thin film)
DESCRIPTION OF SYMBOLS 10 Container main body 17 Side wall 19 Front 30 Cover body 40 Substrate support body 41 Support body (support frame)
42 Horizontal beam 43 Vertical beam 44 Bending connecting piece 46 Support piece 47 Front support piece 51 Rear support piece 60 Support projection 61 Part of surface 62 Remaining surface 63 Inclined surface h Height of support projection θ Angle of inclined surface

Claims (3)

表面から裏面の周縁にかけて回路用の薄膜が積層された基板を挟んで対向する一対の支持体と、この一対の支持体にそれぞれ形成されて基板の側部周縁に沿う複数の支持片とを備え、この複数の支持片に基板を略水平に支持させる基板用支持体であって、
支持片を、支持体の前部に形成される前部支持片と、支持体の後部に形成されて前部支持片の後方に位置する後部支持片とに分割し、これら前部支持片と後部支持片とに支持突部をそれぞれ形成し、支持突部の表面の一部を湾曲させて基板の裏面に接触可能とするとともに、支持突部の表面の残部を基板の裏面に非接触の傾斜面に形成したことを特徴とする基板用支持体。
A pair of supports opposed to each other with a substrate on which a thin film for circuit is laminated from the front surface to the periphery of the back surface, and a plurality of support pieces formed on the pair of support members and along the periphery of the side portion of the substrate , A substrate support for supporting the substrate substantially horizontally on the plurality of support pieces,
The support piece is divided into a front support piece formed at the front part of the support body, and a rear support piece formed at the rear part of the support body and positioned behind the front support piece. A support protrusion is formed on each of the rear support pieces, and a part of the surface of the support protrusion is curved so that the back surface of the substrate can be contacted, and the rest of the surface of the support protrusion is not contacted with the back surface of the substrate. A substrate support characterized by being formed on an inclined surface.
支持片の前部支持片と後部支持片との表面に支持突部をそれぞれ0.5〜3mmの高さで形成し、この支持突部を基板の周縁から1mm以上内側の裏面に接触させ、前部支持片あるいは後部支持片の表面と支持突部の傾斜面との角度を10〜30°とした請求項1記載の基板用支持体。   A support protrusion is formed at a height of 0.5 to 3 mm on the surface of the front support piece and the rear support piece of the support piece, respectively, and the support protrusion is brought into contact with the back surface 1 mm or more inside from the peripheral edge of the substrate, The substrate support according to claim 1, wherein an angle between a surface of the front support piece or the rear support piece and an inclined surface of the support protrusion is set to 10 to 30 °. 基板を収納する容器本体の開口した正面を蓋体により開閉する基板収納容器であって、
容器本体の内部両側に請求項1又は2記載の基板用支持体を設けたことを特徴とする基板収納容器。
A substrate storage container that opens and closes an open front surface of a container body that stores a substrate by a lid,
A substrate storage container comprising the substrate support according to claim 1 or 2 provided on both inner sides of the container body.
JP2009206704A 2009-09-08 2009-09-08 Support body for substrate and substrate storage container Pending JP2011060877A (en)

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Cited By (6)

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JP2013038200A (en) * 2011-08-08 2013-02-21 Shin Etsu Polymer Co Ltd Substrate storage container
WO2013069088A1 (en) * 2011-11-08 2013-05-16 ミライアル株式会社 Wafer storage container
JP2013120896A (en) * 2011-12-08 2013-06-17 Shin Etsu Polymer Co Ltd Thin plate housing container
JP2015520946A (en) * 2012-05-04 2015-07-23 インテグリス・インコーポレーテッド Replaceable backstop to support the wafer
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JP2017504218A (en) * 2014-01-21 2017-02-02 ボムジェ ウ Fume removal equipment

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038200A (en) * 2011-08-08 2013-02-21 Shin Etsu Polymer Co Ltd Substrate storage container
WO2013069088A1 (en) * 2011-11-08 2013-05-16 ミライアル株式会社 Wafer storage container
US8960442B2 (en) 2011-11-08 2015-02-24 Miraial Co., Ltd. Wafer storing container
KR101738219B1 (en) 2011-11-08 2017-05-19 미라이얼 가부시키가이샤 Wafer storage container
JP2013120896A (en) * 2011-12-08 2013-06-17 Shin Etsu Polymer Co Ltd Thin plate housing container
JP2015520946A (en) * 2012-05-04 2015-07-23 インテグリス・インコーポレーテッド Replaceable backstop to support the wafer
JP2017504218A (en) * 2014-01-21 2017-02-02 ボムジェ ウ Fume removal equipment
US10714367B2 (en) 2014-01-21 2020-07-14 Bum Je WOO Fume-removing device
US11114325B2 (en) 2014-01-21 2021-09-07 Bum Je WOO Fume-removing device
US11152239B2 (en) 2014-01-21 2021-10-19 Bum Je WOO Fume-removing device
US11201071B2 (en) 2014-01-21 2021-12-14 Bum Je Woo Fume-removing device
CN105824139A (en) * 2016-05-27 2016-08-03 昆山龙腾光电有限公司 Optical diaphragm abrasion resistance testing jig
CN105824139B (en) * 2016-05-27 2019-05-14 昆山龙腾光电有限公司 Optical diaphragm wear-resisting test jig

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