JP2014116492A - Substrate housing container - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate housing container which can smoothly push up a substrate, appropriately lower the substrate, and suppress increase in a load applied to a lid.SOLUTION: A substrate housing container includes a container body for housing a semiconductor wafer W, a lid for opening and closing a front surface opened in the container body and a pair of support pieces for supporting the semiconductor wafer W arranged on inner surfaces of both side walls of the container body, and lifts the semiconductor wafer W from the support pieces when the lid is press-fitted to the container body. On the rear sides of the inner surfaces of both side walls of the container body, support grooves 40 for supporting the lifted semiconductor wafer W are arranged. A slope surface 43 on the lower side of the support groove 40 consists of a first gloss region 44 coming into contact with a peripheral side part of the lifted semiconductor wafer W first, a matte region 45 coming into slide contact with the peripheral side part of the semiconductor wafer W having passed the first gloss region 44, and a second gloss region 46 coming into slide contact with the peripheral side part of the semiconductor wafer W having passed the matte region 45.

Description

  The present invention relates to a substrate storage container used when a substrate made of a semiconductor wafer or the like is stored, stored, transported, transported, or the like.

  Although not shown, a conventional substrate storage container includes a container body that stores a plurality of semiconductor wafers, and a lid that opens and closes the front surface of the container body. When the body is fitted, the semiconductor wafer is levitated from the support piece of the container body and is pressed and supported on the inner surface of the container body (see Patent Documents 1, 2, 3, and 4).

  The container body is formed into a front open box with a front opening made of a predetermined molding material made of, for example, polycarbonate resin having excellent strength, and a pair of left and right support pieces for horizontally supporting the semiconductor wafer is provided on the inner surfaces of both side walls. A plurality of the pair of support pieces are arranged in the vertical direction at a predetermined interval. A pair of left and right support grooves for supporting a semiconductor wafer levitated from a pair of support pieces are provided behind the inner surface of both side walls of the container body, and a plurality of the pair of support grooves are arranged vertically at a predetermined interval. Yes. Each support groove is integrally formed with a V-shaped cross section when the container body is molded, and functions to guide the semiconductor wafer into the valley of the groove by the inclined surface.

  The lid is formed in a substantially rectangular front surface corresponding to the front surface of the container body, and a front retainer that holds the semiconductor wafer is mounted on a facing surface that faces the stored semiconductor wafer. The front retainer includes, for example, a frame body that is mounted on the opposing surface of the lid body, and a plurality of elastic pieces having spring properties are arranged side by side on the left and right sides of the frame body. A holding groove for holding the front edge of the semiconductor wafer is integrally formed at the tip.

  In such a substrate storage container, when a plurality of semiconductor wafers are aligned and stored in a horizontal state via a support piece in the container body, and a lid is press-fitted into the open front of the container body, the semiconductor wafer The front retainer is elastically pressed against the front edge of the front retainer while pressing the holding groove, the front edge of the semiconductor wafer is elastically held in the holding groove of the elastic piece, and the semiconductor wafer is placed behind the container body. Pressed.

  When the lid is press-fitted into the container body and the semiconductor wafer is pushed to the rear of the container body, the semiconductor wafer slightly floats from the support piece of the container body, and the peripheral side of the semiconductor wafer comes into contact with the inclined surface of the support groove of the container body. The semiconductor wafer slides up from the slope of the support groove to the valley, and the semiconductor wafer is positioned in the valley of the support groove.

  On the other hand, when the lid is removed from the front of the container body, the semiconductor wafer descends while sliding on the slope from the valley of the support groove of the container body, and returns to the surface of the original support piece from the slope of the support groove. After that, it is taken out from the container body by a dedicated robot hand and set in a semiconductor processing apparatus or the like.

JP 2010-199354 A JP 2010-199189 A JP 2006-332261 A Japanese Patent Laying-Open No. 2005-320028

The conventional substrate storage container is configured as described above, and the support groove of the container body is required to have a function of raising the semiconductor wafer smoothly and reliably, or smoothly and reliably lowering the semiconductor wafer.
However, the conventional support groove of the container body is merely formed as a recess when the container body is molded, and the material and the surface state are not considered so much, so that the semiconductor wafer is expected to rise smoothly and smoothly. There are cases where it is not possible.

  If this is left as it is, it may be difficult to support the semiconductor wafer in a stable posture in the support groove. Further, there arises a problem that the semiconductor wafer is inadvertently returned to the original position of the support piece, or is displaced without being properly returned, thereby hindering the removal of the semiconductor wafer by the robot hand.

In order to cope with such a situation, (1) a method of changing the angle of the support groove and (2) a method of increasing the press-fitting load of the lid and pressing the peripheral side portion of the semiconductor wafer strongly against the slope of the support groove are proposed. ing.
However, in the case of the method (1), there arises a new problem that a large-scale improvement is made to the mold for the container body or the cost is increased. In addition, although the semiconductor wafer can be expected to fall smoothly depending on the angle of the support groove, a smooth rise of the semiconductor wafer may not be realized, and the reverse situation is also expected.

  In the case of the method (2), it is not necessary to significantly improve the mold for the container body, but it is necessary to press the peripheral side portion of the semiconductor wafer particularly strongly against the slope of the support groove. As a result, the slope of the support groove is damaged, causing a problem that particles that cause contamination are generated.

  The present invention has been made in view of the above, and provides a substrate storage container capable of smoothly raising and lowering a substrate or appropriately lowering the substrate and suppressing an increase in load acting on a lid. The purpose is that.

In the present invention, in order to solve the above problems, a container main body for storing a substrate and a lid body for opening and closing the front surface of the container main body are provided. When the lid is fitted on the open front of the container body containing the substrate, the substrate is levitated from the support piece and supported on the inner surface of the container body,
Of the inner surface of the container main body and the lid, at least the inner surface of the container main body is provided with a groove for supporting the substrate levitated from the support piece. Partitioning into a first region located at the lower end in contact, a second region located in the middle, and a third region located at the trough periphery of the groove;
The second region is characterized in that the dynamic friction coefficient is lower than that of the first and third regions.

  The first region and the third region are formed as a first gloss region and a second gloss region, respectively, and the second region is on the peripheral edge of the substrate that has passed through the first gloss region. It is preferable that it is formed as a matte region that contacts.

  In addition, a front retainer that holds the groove of the elastic piece in pressure contact with the front edge of the substrate is attached to the opposite surface of the lid facing the substrate, and the slope that defines the groove of the front retainer is attached to the front edge of the substrate. A first gloss region that first contacts the substrate, a matte region that contacts the front edge of the substrate that has passed through the first gloss region, and a periphery of the substrate that has passed through the matte region It is formed from the second gloss region that contacts the front portion and is guided to the trough of the groove, and the dynamic friction coefficient of the matte region can be made lower than the dynamic friction coefficient of the first and second gloss regions.

Of the groove of the container body and the groove of the front retainer, at least the groove of the container body can be formed of polycarbonate resin, polybutylene terephthalate resin, or cycloolefin polymer resin.
Also, the first and second glossy areas of the slope can be formed from polybutylene terephthalate resin, and the matte area of the slope can be molded from polycarbonate resin.

  Here, the substrate in the claims includes a necessary number of at least φ200, 300, 450 mm semiconductor wafer, glass wafer, mask glass, and the like. The container body may be transparent, opaque, or translucent. Support pieces can be integrally formed on both sides of the container body, or separate support pieces can be detachably mounted. Further, the lid is formed from a lid main body fitted in the front of the container main body and a surface plate covering the open surface of the lid main body, and the lid body is provided between the lid main body and the surface plate. A locking mechanism can be interposed. In addition, the frosted region of the groove can be subjected to a texture processing or the like.

  According to the present invention, when the substrate is stored in the container main body of the substrate storage container via the support piece, and the lid is tightly fitted to the open front of the container main body, the substrate moves on the support piece of the container main body. The peripheral edge thereof contacts the first gloss region of the support groove, and the matte region and the second gloss region are sequentially brought into contact with the first gloss region and lifted from the support piece to rise to the support groove. The substrate is supported in the valley. At this time, the peripheral edge portion of the substrate is horizontally moved on the support piece while being pushed by the groove of the front retainer, contacts the lower end portion of the inclined surface of the support groove and temporarily stops, and then the moving direction is changed upward. Begin to climb up the slope.

  When climbing the inclined surface in this way, the first contact is made with the first gloss region having a low coefficient of static friction, and the movement of the inclined surface is started. A smooth rise can be expected.

  On the other hand, when the lid is removed from the front surface of the container body, the substrate descends while sequentially contacting the second gloss area, the matte area, and the first gloss area of the slope from the valley of the support groove, Return to the original support piece from one glossy area. At this time, there is no catch from the second gloss region having a small static friction coefficient, and the substrate starts to move smoothly, and the matte region having a low dynamic friction coefficient is located between the first and second gloss regions, so that the substrate is caught in the middle. Without falling, it can be slightly decelerated in the first gloss area at the lower end and stopped at a fixed position.

  According to the present invention, there is an effect that the substrate can be raised and lowered smoothly, or appropriately lowered, and an increase in the load acting on the lid can be suppressed.

  Further, according to the invention described in claim 3, since the friction coefficient is changed by dividing the slope of the groove of the elastic piece of the front retainer into three sections, the board can be smoothly raised or raised in the groove of the front retainer, It is possible to provide a function of smoothly lowering.

It is an exploded perspective explanatory view showing typically an embodiment of a substrate storage container concerning the present invention. It is a transverse section explanatory view showing typically an embodiment of a substrate storage container concerning the present invention. It is a longitudinal section explanatory view showing typically an embodiment of a substrate storage container concerning the present invention. It is explanatory drawing which shows typically the support relationship of a pair of support groove | channel and semiconductor wafer in embodiment of the substrate storage container which concerns on this invention. It is explanatory drawing which shows typically the rising state of the peripheral side part of the semiconductor wafer with respect to the support groove | channel in embodiment of the substrate storage container which concerns on this invention. It is a perspective explanatory view showing typically the support structure examination device for semiconductor wafers in the embodiment of the substrate storage container concerning the present invention. It is explanatory drawing which shows typically the support relationship of the holding groove of the front retainer in the 2nd Embodiment of the substrate storage container which concerns on this invention, and the peripheral front part of a semiconductor wafer.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. A substrate storage container in the present embodiment includes a container body 1 for storing a plurality of semiconductor wafers W, as shown in FIGS. And a detachable lid 10 that opens and closes the opened front surface 2 of the container body 1, and a pair of support grooves 40 that support the semiconductor wafers W floating from the support pieces 3 of the container body 1 on both side walls of the container body 1. Are arranged so as to face each other, and at least the inclined surface 43 below each support groove 40 is divided into a first gloss region 44, a matte region 45, and a second gloss region 46. .

  The semiconductor wafer W is made of, for example, a thin and brittle silicon wafer having a diameter of 300 mm or 450 mm, and is supported horizontally in the container body 1 as shown in FIGS. 1 to 3, and a plurality of (for example, 25) wafers are vertically arranged. Aligned and stored.

  The container main body 1 and the lid body 10 are each composed of a combination of a plurality of parts, each of which is injection-molded with a molding material containing a required resin. Examples of the resin required for the molding material include thermoplastic resins such as polycarbonate, cycloolefin polymer, polyetherimide, polyether ketone, polyether ether ketone, polybutylene terephthalate, polyacetal, and liquid crystal polymer, and alloys thereof. .

  These resins are added with various antistatic agents such as conductive materials made of carbon fibers, carbon powder, carbon nanotubes, conductive polymers, and the like, and anions, cations, and nonionics as required. Further, benzotriazole-based, salicylate-based, cyanoacrylate-based, oxalic acid anilide-based, hindered amine-based ultraviolet absorbers are added, and glass fibers, carbon fibers, and the like that improve rigidity are also selectively added.

  As shown in FIGS. 1 to 3, the container body 1 is formed in a front open box type having an open front surface 2, and is held by a ceiling transport mechanism in a semiconductor manufacturing factory with the open front surface 2 facing horizontally. Then, it is transported between processes or positioned and mounted on a lid opening / closing device attached to the semiconductor processing apparatus. The container body 1 is provided with a pair of support pieces 3 for horizontally supporting the semiconductor wafer W on the inner sides, in other words, the inner surfaces of the left and right side walls.

  As shown in FIGS. 1 and 2, the pair of support pieces 3 are arranged at predetermined intervals in the vertical direction, and each support piece 3 is formed as an elongated plate that supports the peripheral side of the semiconductor wafer W from below. In addition, on the front surface of each support piece 3, a stepped portion that regulates the protrusion of the semiconductor wafer W is integrally formed. Further, mounting holes 4 are drilled through both sides of the front and rear portions of the bottom plate of the container body 1, and a gas replacement filter valve 5 is fitted into each mounting hole 4. The plurality of filter valves 5 function to eliminate the pressure difference between the inside and outside of the substrate storage container by allowing a gas such as air or purge gas to flow inside and outside.

  Positioning tools for positioning the container body 1 are disposed on both sides of the front part and the center of the rear part on the back of the bottom plate of the container body 1. Each positioning tool is basically formed in a substantially V-shaped cross section having a substantially elliptical shape in a plane, and a recess having a pair of inclined surfaces is directed downward, and a recess is formed on the positioning pin of the lid opening / closing device from above. The container body 1 functions so as to be positioned with high accuracy by fitting and sliding contact. In addition, a separate bottom plate is screwed horizontally on the back surface of the bottom plate of the container body 1 via a screw tool, and the bottom plate exposes a plurality of positioning tools, respectively.

  At the center of the ceiling of the container body 1, a transfer top flange 6 gripped by a ceiling transport mechanism of a semiconductor manufacturing factory is detachably mounted. Are each provided with a locking hole 7 for locking. In addition, a grip 8 for gripping operation is detachably mounted at the center of both side walls of the container body 1 and a side rail 9 for transportation is selectively mounted horizontally at the bottom of the side walls. Is done.

  As shown in FIGS. 1 to 3, the lid body 10 includes a lid body 11 that is press-fitted into the open front surface 2 of the container main body 1 and a surface plate that covers the open front surface of the lid main body 11. 17 and a sealing gasket 19 for sealing and sealing interposed between the inner periphery of the front surface 2 of the container body 1 and the lid body 11, and a locking lock is provided between the lid body 11 and the surface plate 17. A mechanism 30 is interposed.

  The lid body 11 is basically formed in a substantially dish-shaped cross section with a shallow bottom, and a plurality of reinforcing and mounting ribs are disposed inside, and on the opposite surface facing the semiconductor wafer W, that is, on the back surface, A front retainer 12 that elastically holds the semiconductor wafer W is mounted. The front retainer 12 includes a vertically long frame 13 that is attached to the center of the opposing surface of the lid body 11, and a plurality of elastic pieces 14 that extend inward are arranged vertically on the left and right sides of the frame 13. An array is formed. Each elastic piece 14 is formed in, for example, an elongated linear strip having flexibility and elasticity, and a holding groove 15 having a substantially V-shaped cross section for holding the front edge of the semiconductor wafer W is integrally formed at the tip.

  A frame-shaped fitting groove is formed in the periphery of the back surface of the lid body 11, and a seal gasket 19 that presses against the inner periphery of the front surface 2 of the container body 1 is tightly fitted in the fitting groove. In the upper and lower sides of the peripheral wall 11, an intrusion hole 16 for the locking mechanism 30 that faces the locking hole 7 of the container body 1 is penetrated and drilled.

  The surface plate 17 is formed in a horizontally long front rectangular shape, and is provided with a plurality of reinforcing and mounting ribs, screw holes, and the like. On both side portions of the surface plate 17, operation holes 18 for the locking mechanism 30 are respectively drilled.

  The locking mechanism 30 includes a pair of left and right rotating plates 31 that are pivotally supported on both the left and right sides of the lid body 11 of the lid body 10 and are rotated from the outside, and the vertical direction of the lid body 10 as each rotating plate 31 rotates. A plurality of advancing / retracting plates 32, and a plurality of locking claws 33, which slide out of the advancing / retracting plates 32 and come in / out of the locking / unlocking holes 16 of the container body 1. Configured.

  Each rotary plate 31 faces the operation hole 18 of the surface plate 17 of the lid 10 and is rotated by an operation key of the lid opening / closing device passing through the operation hole 18. Each locking claw 33 is basically bent and formed in a substantially L-shaped cross section, and is provided with a rotatable roller at its tip, and is pivotally supported in the vicinity of the retracting hole 16 in the lid body 11. Then, it is connected to the tip of the advance / retreat plate 32 via a pin, and the roller is brought into contact with and separated from the locking hole 7 of the container body 1.

  As shown in FIGS. 2, 4, and 5, the pair of support grooves 40 are arranged at the rear of the inner surface of both side walls of the container body 1 and are arranged in the vertical direction, and are positioned at the rear of the support piece 3. The support groove 40 is formed in a concave shape with a V-shaped cross section that extends horizontally in the front-rear direction of the container body 1, restricts excessive insertion of the semiconductor wafer W, and slopes the peripheral side portion of the semiconductor wafer W in the deep valley 41. It functions to guide by 42 and 43. The support groove 40 is molded by a required molding material, for example, a multicolor molding method using a polycarbonate resin, a polybutylene terephthalate resin, or a cycloolefin polymer resin.

  The support groove 40 is partitioned into a pair of upper and lower inclined surfaces 42 and 43 facing each other, and each inclined surface 42 and 43 is inclined at an angle of 50 ° to 70 °, preferably 55 ° to 65 °, more preferably 60 °. Of the pair of upper and lower inclined surfaces 42 and 43, at least the lower inclined surface 43 is a first gloss region that first contacts the peripheral side of the semiconductor wafer W that has moved on the surface of the support piece 3, as shown in FIG. The first region located at the lower end portion that becomes 44 and the matte portion that becomes the second region located in the middle portion in sliding contact with the peripheral side portion of the semiconductor wafer W that has passed through the first gloss region 44 The region 45 is divided into a third region which is a second gloss region 46 which is slidably contacted with the peripheral side portion of the semiconductor wafer W which has passed through the matting region 45 and guided to the valley 41 of the support groove 40. It is formed so that.

  The first gloss region 44, the matte region 45, and the second gloss region 46 are formed to have the same length / width or different lengths / widths as necessary. For example, the matte region 45 is formed with the longest length / width, the first gloss region 44 is formed with the next longest length / width, and the second gloss region 46 is formed with the shortest length / width. Can be formed.

  The first and second gloss regions 44 and 46 are formed by, for example, mirror processing of the cavity surface of the mold, have a static coefficient of friction lower than that of the gloss region 45, and have excellent lubricity when starting to move on the slope. It has the characteristics. The static friction coefficients of the first and second gloss regions 44 and 46 may be the same value or slightly different values. The first and second gloss regions 44 and 46 exhibit the most excellent sliding effect when molded with polybutylene terephthalate resin.

  The gloss region 45 is formed with a lower coefficient of dynamic friction than the first and second gloss regions 44 and 46 by using, for example, a filler, embossing with a mold, mechanical processing after molding, and the like. The peripheral side portion is prevented from being caught between the first and second gloss regions 44 and 46. As in the previous case, the matte region 45 exhibits an excellent sliding effect when it is molded from a polybutylene terephthalate resin.

  In the above configuration, a plurality of semiconductor wafers W are stored in a horizontal state in the container main body 1 of the substrate storage container via the support piece 3, and the lid 10 is opened on the front surface 2 opened by the container main body 1 by the lid opening / closing device. When press-fitted, the holding piece 15 is pressed against the front edge of the semiconductor wafer W while the elastic piece 14 of the front retainer 12 is bent, and the front edge of the semiconductor wafer W is brought into contact with the holding groove 15 of the elastic piece 14. Is held elastically, and the semiconductor wafer W is pushed backward of the container body 1 while being slightly bent.

  When the lid 10 is press-fitted into the container main body 1 and the semiconductor wafer W is pushed rearward of the container main body 1, the semiconductor wafer W moves horizontally from the support piece 3 of the container main body 1, and the peripheral side portion thereof has a support groove 40. The first gloss region 44 is contacted, and the matte region 45 and the second gloss region 46 are sequentially brought into sliding contact with the first gloss region 44, and the semiconductor wafer W is formed in the valley 41 of the support groove 40. It will be positioned (refer FIG. 5). At this time, since the peripheral side portion of the semiconductor wafer W first comes into contact with the first gloss region 44, a smooth increase thereafter can be expected.

  On the other hand, when the lid body 10 is removed from the front surface 2 of the container main body 1 by the lid body opening / closing device, the semiconductor wafer W is separated from the valley 41 of the support groove 40 to the second gloss area 46 and the gloss area 45 of the slope 43. The first gloss area 44 descends while being in sliding contact with the first gloss area 44, returns to the surface of the original support piece 3 from the first gloss area 44, and is then taken out from the container body 1 by the dedicated robot hand. It is set in semiconductor processing equipment. At this time, since the matte region 45 is located between the first and second gloss regions 44 and 46, the semiconductor wafer W is not caught during movement.

  The effects of the first gloss region 44, the matte region 45, and the second gloss region 46 can be confirmed by forming the container body 1 and the lid 10 transparently, respectively. 6 can be easily confirmed by using the support structure examination apparatus 50 for the semiconductor wafer W shown in FIG. 6 and considering the support structure examination apparatus 50 as a substrate storage container (this point is disclosed in Japanese Patent Application Laid-Open No. 2012-043985). Issue gazette).

  The support structure examination apparatus 50 includes a base plate 51 larger than, for example, a φ450 mm semiconductor wafer W, and a slider 52 attached to the surface of the base plate 51 and moving forward and backward as the lid 10 of the substrate storage container. A plurality of support tools 53 that support the peripheral edge of the semiconductor wafer W are disposed on the base plate 51 and the slider 52, respectively.

  The plurality of support tools 53 of the base plate 51 are slidably fitted and supported in guide grooves curved in a substantially horseshoe shape of the base plate 51, and are regarded as the support grooves 40 of the container body 1. A support groove 40 having a V-shaped cross section is formed in each support tool 53 of the base plate 51 by a required resin or the like, and a slope 43 below the support groove 40 is inclined at an angle of 60 °, for example.

  The slope 43 below the support groove 40 passes through the first gloss region 44 that first contacts the peripheral side of the semiconductor wafer W that has floated from the surface of the support piece 3, and the first gloss region 44. A matte region 45 slidably contacting the peripheral side of the semiconductor wafer W, and a second slidably contacting the peripheral side of the semiconductor wafer W that has passed through the matte region 45 and guided to the valley 41 of the support groove 40. The matte area 46 is formed, and the matte area 45 is textured.

  The slider 52 is provided with a slide detector for detecting the amount of slide and a load detector for the semiconductor wafer W supported by a plurality of support tools 53. The plurality of support tools 53 of the slider 52 are regarded as the front retainer 12 of the lid 10.

  According to the above configuration, the slope 43 below the support groove 40 is divided into three sections and the coefficient of friction is changed, so that the semiconductor wafer W can be smoothly and reliably raised on the support groove 40 of the container body 1. A function of smoothly and reliably lowering the semiconductor wafer W can be provided. Therefore, the semiconductor wafer W can be supported in a stable posture by the support groove 40, and the semiconductor wafer W is not damaged at all.

  Moreover, since the semiconductor wafer W can be appropriately returned to the original position of the support piece 3, the possibility of hindering the removal of the semiconductor wafer W by the robot hand can be effectively eliminated. In addition, since the angle of the support groove 40 is changed, it is not necessary to make a large-scale improvement to the mold for the container body 1, so that it is possible to suppress the delay and complication of the molding operation and to prevent an increase in cost. it can. Further, since it is not necessary to press the peripheral edge of the semiconductor wafer W particularly strongly against the inclined surface 43 of the support groove 40, it is possible to prevent the inclined surface 43 of the support groove 40 from being damaged or generating particles. .

  Next, FIG. 7 shows a second embodiment of the present invention. In this case, in addition to the support groove 40 of the container body 1, a pair of upper and lower inclined surfaces 20 defining each holding groove 15 of the front retainer 12. A first gloss region 23 that first contacts at least the lower slope 21 of 21 with the front edge of the semiconductor wafer W, and the periphery of the semiconductor wafer W that has passed through the first gloss region 23 A matte region 24 that contacts the front part, and a second glossy region 25 that contacts the front edge of the semiconductor wafer W that has passed through the matte region 24 and leads to the valley 22 of the holding groove 15. They are divided and formed.

  The pair of upper and lower inclined surfaces 20 and 21 that define the holding groove 15 are inclined at an angle of 50 ° to 70 °, preferably 55 ° to 65 °, more preferably 60 °. The first and second gloss regions 23 and 25 are transferred and formed by, for example, mirror processing of the cavity surface of the mold, have a lower static friction coefficient than the gloss region 24, and start to move more than the gloss region 24. Excellent lubricity. The dynamic friction coefficients of the first and second gloss regions 23 and 25 may be the same value or slightly different values. The first and second gloss regions 23 and 25 exhibit the most excellent lubricity when molded with polybutylene terephthalate resin.

  The matte region 24 is formed to have a lower dynamic friction coefficient than the first and second gloss regions 23 and 25 by using, for example, a filler, embossing with a mold, mechanical processing after molding, and the like. Is prevented from being caught on the way when the front edge of the rim moves from the second gloss area 25 to the first gloss area 23. The matte region 24 can be formed of polybutylene terephthalate resin or polycarbonate resin. The other parts are substantially the same as those in the above embodiment, and thus description thereof is omitted.

  In this embodiment, the same effect as that of the above embodiment can be expected, and the slope 21 below the holding groove 15 is divided into three sections and the friction coefficient thereof is changed, so that the holding groove 15 of the front retainer 12 is provided with a semiconductor. Obviously, the wafer W can be lifted smoothly and surely, and the semiconductor wafer W can be lowered smoothly and reliably.

  In the above-described embodiment, the plurality of elastic pieces 14 are vertically arranged on both sides of the frame 13 of the front retainer 12, but the left and right elastic pieces 14 are connected via connecting pieces, and the connecting pieces are connected to the connecting pieces. The holding groove 15 may be formed. Further, a connecting column may be installed vertically between the upper and lower parts of the frame 13, and a plurality of elastic pieces 14 may be arranged on the left and right sides of the connecting column.

  Further, a first gloss region 44, a matte region 45, and a second gloss region 46 may be formed on the pair of slopes 42 and 43 of the support groove 40, respectively. A gloss area 44, a gloss area 45, and a second gloss area 46 may be formed. Further, a first gloss region 23, a matting region 24, and a second gloss region 25 may be formed on each of the pair of inclined surfaces 20 and 21 of the holding groove 15 of the front retainer 12. It is also possible to form the first gloss area 23, the matte area 24, and the second gloss area 25.

Next, examples of the present invention will be described together with comparative examples.
Example 1
First, a support structure examination apparatus for a semiconductor wafer shown in FIG. 6 was prepared, and this support structure examination apparatus was regarded as a substrate storage container. A support groove having a V-shaped cross section was formed in the support tool of the base plate of the support structure examination apparatus by using a polycarbonate resin, and the inclination angle of the slope below the support groove was set to 60 °.

  The slope below the support groove is a first gloss region that first contacts the peripheral side of the semiconductor wafer that has floated from the surface of the support piece, and a peripheral side of the semiconductor wafer that has passed through the first gloss region. A matte region that is in sliding contact with the portion, and a second glossy region that is in sliding contact with the peripheral side portion of the semiconductor wafer that has passed through the matte region and that is guided to the valley of the support groove. Molded by processing.

  Once the support structure review device is prepared, a semiconductor wafer with a diameter of 450 mm is set on the support structure review device, the slider is slid to support the peripheral edge of the semiconductor wafer on a plurality of support devices, and the semiconductor is formed in a plurality of support groove valleys. The peripheral edge of the wafer was lifted and supported, and then the slider was retracted and returned to its original position so that the peripheral edge of the semiconductor wafer was lowered from the valley of each support groove. When the peripheral edge of the semiconductor wafer was supported by the valleys of the plurality of support grooves, the detection values of the slide detector and the load detector at that time are summarized in Table 1, respectively.

  When the above operation is repeated three times and the peripheral edge of the semiconductor wafer moves up and down smoothly and reliably on the slope of the support groove, ◎, the peripheral edge of the semiconductor wafer moves up and down reliably on the slope of the support groove. ◯ in the case, the peripheral edge of the semiconductor wafer is caught on the slope of the support groove, but △ if it moves up and down, and × if the slope of the support groove does not move up and down in the semiconductor wafer. Are summarized in Table 1. These were judged by the detection values of the slide detector and the load detector and by visual observation.

Example 2
Basically the same as in the first embodiment, except that a support groove having a V-shaped cross section is recessed with polybutylene terephthalate resin in the support member of the base plate, and the first gloss is formed on the slope below the support groove. A region, a matte region, and a second gloss region were formed. The above operation was repeated three times using this support groove, and the results are summarized in Table 1.

Example 3
Basically, it is the same as in the first embodiment, but a support groove having a V-shaped cross section is formed by recessing a cycloolefin polymer resin in the support member of the base plate, and the first gloss is formed on the slope below the support groove. A region, a matte region, and a second gloss region were formed. The above operation was repeated three times using this support groove, and the results are shown in Table 1.

Example 4
Basically the same as in Example 1, but the first and second gloss areas on the slope below the support groove were molded from polybutylene terephthalate resin, and the matte area was molded from polycarbonate resin. The above operation was repeated three times using this support groove, and the results are shown in Table 1.

Comparative Example Basically the same as the example, but the support groove is simply dent-molded with polycarbonate resin, and this support groove is a conventional type that does not have the first gloss area, the matte area, and the second gloss area. . The above operation was repeated three times using this support groove, and the results are shown in Table 1.

  As is clear from Table 1, in the case of Examples 1, 2, 3, and 4, the peripheral side of the semiconductor wafer moves up and down reliably three times on the slope of the support groove, and good results can be obtained. did it. In particular, in Examples 2 and 4, the peripheral side portion of the semiconductor wafer smoothly and reliably moved up and down along the slope of the support groove, and extremely good results were obtained.

  On the other hand, in the case of the comparative example, the peripheral side of the semiconductor wafer may move up and down on the slope of the support groove, or the peripheral side of the semiconductor wafer may not move up and down, and good results are obtained. I could not. For this reason, the sliding amount of the slider and the load applied to the semiconductor wafer have to be increased.

  From the above results, it is estimated that substantially the same good results can be obtained even if the first gloss area, the matte area, and the second gloss area are formed on at least the lower slope of the holding groove of the front retainer. The

  The substrate storage container according to the present invention can be used in the field of manufacturing semiconductors and liquid crystals.

DESCRIPTION OF SYMBOLS 1 Container body 2 Front 3 Support piece 10 Lid body 11 Lid body 12 Front retainer 14 Elastic piece 15 Holding groove (groove)
20 Slope 21 Slope 22 Valley 23 First gloss area 24 Gloss area 25 Second gloss area 40 Support groove (groove)
41 Valley 42 Slope 43 Slope 44 First gloss area 45 Gloss area 46 Second gloss area 50 Support structure examination device W Semiconductor wafer (substrate)

Claims (4)

A container main body that includes a container main body for storing a substrate and a lid body that opens and closes the front surface of the container main body, and is provided with support pieces that support the substrate substantially horizontally on both sides inside the container main body, and stores the substrate. A substrate storage container that floats the substrate from the support piece and contacts and supports the inner surface of the container body when the lid is fitted to the front of the
Of the inner surface of the container main body and the lid, at least the inner surface of the container main body is provided with a groove for supporting the substrate levitated from the support piece. Partitioning into a first region located at the lower end in contact, a second region located in the middle, and a third region located at the trough periphery of the groove;
The substrate storage container, wherein the second region is formed to have a lower dynamic friction coefficient than the first and third regions.   The first region and the third region are formed as a first gloss region and a second gloss region, respectively, and the second region contacts the peripheral edge of the substrate that has passed through the first gloss region. The substrate storage container according to claim 1, wherein the substrate storage container is formed as a matte area.   A front retainer that holds and holds the groove of the elastic piece on the front surface of the peripheral edge of the cover on the surface facing the substrate of the lid is attached, and the inclined surface that defines the groove of the front retainer is first attached to the front surface of the peripheral edge of the substrate. A first gloss area in contact with the substrate, a matte area in contact with the front edge of the substrate that has passed through the first gloss area, and a front edge of the substrate that has passed through the matte area And a second gloss region that contacts the groove and leads to a trough of the groove, and the coefficient of dynamic friction of the matte region is lower than the coefficient of dynamic friction of the first and second gloss regions. Substrate storage container.   The substrate storage container according to claim 2 or 3, wherein the first and second glossy areas of the slope are formed of polybutylene terephthalate resin, and the matte area of the slope is molded of polycarbonate resin.

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