JP2011060797A - ブロック型電力モジュール及び電力変換装置 - Google Patents
ブロック型電力モジュール及び電力変換装置 Download PDFInfo
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- JP2011060797A JP2011060797A JP2009205426A JP2009205426A JP2011060797A JP 2011060797 A JP2011060797 A JP 2011060797A JP 2009205426 A JP2009205426 A JP 2009205426A JP 2009205426 A JP2009205426 A JP 2009205426A JP 2011060797 A JP2011060797 A JP 2011060797A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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Abstract
【効果】窒化アルミ又はアルミナ等の金属セラミック基板をパワー素子用基板とすることにより、当該パワー素子用基板の板厚を厚くしても熱抵抗を抑えることができるので、本実施の形態に係るパワー素子用基板では、絶縁層とされる金属セラミック基板の板厚を適宜に厚くし、結合容量を低下させることが可能となる。即ち、かかる構成とされたパワー素子用基板では、結合容量の低下に応じて絶縁区間のインピーダンスが高くなるので、プリント配線とモータ側ブラケットとの間の絶縁が保障され、これにより、パワー素子用基板に実装された電気的素子の安定動作が実現される。
【選択図】図7
Description
100 PFC回路のブロック型電力モジュール
110 フレーム構造体
113 パワー素子用基板
120 電力系プリント基板
200 DC−DCコンバータ回路のブロック型電力モジュール
210 フレーム構造体
213 パワー素子用基板
220 電力系プリント基板
300 被固定体(筐体側ヒートシンク)
400 制御基板
500 大型素子アセンブリ
Claims (3)
- パワー半導体素子を実装させたパワー素子用基板と、外周壁を形成するフレームの内部に前記パワー素子用基板を収容させ前記フレームのうち少なくとも一辺の基板積層方向へ前記パワー半導体素子に導通された複数の端子を配列させたフレーム構造体と、前記パワー半導体素子に駆動信号を出力させるドライブ回路及び/又は電路を経由して前記パワー半導体素子に電力を供給させる電力供給回路を実装させた電力系統プリント基板とを備え、
前記パワー素子用基板は、絶縁性を有する金属セラミック基板と前記金属セラミック基板に積層されたプリント配線とを含んでいることを特徴とするブロック型電力モジュール。 - 前記金属セラミック基板は、材質が窒化アルミ又はアルミナとされることを特徴とする請求項1に記載のブロック型電力モジュール。
- 請求項1又は請求項2に記載のブロック型電力モジュールが、複数組み込まれて構成されることを特徴とする電力変換装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009205426A JP5606027B2 (ja) | 2009-09-07 | 2009-09-07 | ブロック型電力モジュール及び電力変換装置 |
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JP2009205426A JP5606027B2 (ja) | 2009-09-07 | 2009-09-07 | ブロック型電力モジュール及び電力変換装置 |
Publications (2)
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JP2011060797A true JP2011060797A (ja) | 2011-03-24 |
JP5606027B2 JP5606027B2 (ja) | 2014-10-15 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014131371A (ja) * | 2012-12-28 | 2014-07-10 | Hitachi Automotive Systems Ltd | Dc−dcコンバータ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1056773A (ja) * | 1996-08-08 | 1998-02-24 | Advantest Corp | 電源ユニット |
JP2007152385A (ja) * | 2005-12-05 | 2007-06-21 | Hitachi Ltd | 高温半田及び高温半田ペースト材、及びそれを用いたパワー半導体装置 |
JP2008235417A (ja) * | 2007-03-19 | 2008-10-02 | Mitsubishi Electric Corp | パワーモジュール |
JP2009105178A (ja) * | 2007-10-23 | 2009-05-14 | Nichicon Corp | パワー半導体ユニット |
-
2009
- 2009-09-07 JP JP2009205426A patent/JP5606027B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1056773A (ja) * | 1996-08-08 | 1998-02-24 | Advantest Corp | 電源ユニット |
JP2007152385A (ja) * | 2005-12-05 | 2007-06-21 | Hitachi Ltd | 高温半田及び高温半田ペースト材、及びそれを用いたパワー半導体装置 |
JP2008235417A (ja) * | 2007-03-19 | 2008-10-02 | Mitsubishi Electric Corp | パワーモジュール |
JP2009105178A (ja) * | 2007-10-23 | 2009-05-14 | Nichicon Corp | パワー半導体ユニット |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014131371A (ja) * | 2012-12-28 | 2014-07-10 | Hitachi Automotive Systems Ltd | Dc−dcコンバータ |
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