JP2011058003A - Epoxy resin composition for sealing semiconductor, resin-sealed semiconductor device and method for mounting semiconductor device - Google Patents

Epoxy resin composition for sealing semiconductor, resin-sealed semiconductor device and method for mounting semiconductor device Download PDF

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JP2011058003A
JP2011058003A JP2010261395A JP2010261395A JP2011058003A JP 2011058003 A JP2011058003 A JP 2011058003A JP 2010261395 A JP2010261395 A JP 2010261395A JP 2010261395 A JP2010261395 A JP 2010261395A JP 2011058003 A JP2011058003 A JP 2011058003A
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epoxy resin
component
mounting
semiconductor
lead
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Yasuyuki Murata
保幸 村田
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor corresponding to lead-free solder, giving a cured product having excellent solder crack resistance, high temperature stability and moisture resistance reliability; and to provide a semiconductor device using the composition and a method for mounting the device. <P>SOLUTION: The composition prepared by formulating (a) an epoxy resin, (b) an epoxy resin-curing agent and (c) an inorganic filler as essential components, and provides the cured product having a relative humidity of 85% at 85°C, moisture absorptivity of ≤0.2% for 72 hours and weight loss of ≤0.5% for 5 hours at 240°C in the air. The resin-sealed semiconductor device for mounting lead-free solder with use of the composition and the method for mounting the device are also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、耐ハンダクラック性、高温安定性および耐湿信頼性に優れた硬化物を与える鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物、鉛フリーハンダを用いた高温リフローに適した樹脂封止型半導体装置、さらに鉛フリーハンダを用いた実装信頼性に優れた半導体装置の実装方法に関する。   The present invention relates to a lead-free solder mounting epoxy resin composition for semiconductor encapsulation that gives a cured product excellent in solder crack resistance, high-temperature stability, and moisture resistance reliability, and a resin seal suitable for high-temperature reflow using lead-free solder. The present invention relates to a mounting method for a semiconductor device having excellent mounting reliability using a lead-type semiconductor device and lead-free solder.

エポキシ樹脂組成物は、その優れた硬化物性や取扱いの容易さから、接着、注型、封止、積層、成形、塗装等の広い分野で使用されている。また、エポキシ樹脂組成物やその成形方法には、多くの種類があり、その選択により成形性や硬化物性が大きく変わるため、使用分野目的に応じて使い分けられている。
近年、高分子材料の使用条件が苛酷になるに従って、高分子材料に対して要求される諸特性は厳しくなり、一般に用いられている各種の樹脂組成物では、要求特性を充分に満足できなくなってきた。
例えば、エポキシ樹脂とフェノール樹脂硬化剤を配合した組成物は、半導体封止に広く用いられているが、この分野でも、要求性能は、厳しくなっている。
すなわち、半導体装置の配線基盤への実装は表面実装が主流となっている。表面実装(ハンダリフロー)においては半導体装置全体がハンダの溶解温度以上の高温にさらされるため、吸湿された水分が急速に膨張し、その結果封止材にクラックが入る等の不良が発生しやすい。
さらに近年は、環境保護の観点かち、有害な鉛の使用を制限する動きがあり、実装用ハンダも鉛フリーハンダが使用されるようになってきた、鉛フリーハンダは従来の鉛を含有するハンダより溶解温度が高く、リフロー温度も高くする必要がある。そのため、鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物には、従来品よりさらに厳しい耐ハンダクラック性が要求される。また、高温のため樹脂硬化物の一部が熱分解し、発生した腐食性物質により、内部の半導体の耐湿信頼性が悪化するなどの弊害もある、現在用いられているノボラック型エポキシ樹脂とフェノール樹脂硬化剤に難燃剤として臭素化エポキシ樹脂を配合した半導体封止用エポキシ樹脂組成物では、耐ハンダクラック性、高温安定性および耐湿信頼性等の点において鉛フリーハンダ実装には対応できなくなってきた。
Epoxy resin compositions are used in a wide range of fields such as adhesion, casting, sealing, lamination, molding and painting because of their excellent cured properties and easy handling. In addition, there are many types of epoxy resin compositions and molding methods thereof, and the moldability and cured product properties vary greatly depending on the selection thereof, so that they are properly used depending on the purpose of the field of use.
In recent years, as the use conditions of polymer materials become severe, various properties required for polymer materials have become severe, and various commonly used resin compositions cannot sufficiently satisfy the required properties. It was.
For example, a composition in which an epoxy resin and a phenol resin curing agent are blended is widely used for semiconductor encapsulation, but the required performance is becoming strict in this field as well.
That is, surface mounting is the mainstream for mounting semiconductor devices on wiring boards. In surface mounting (solder reflow), the entire semiconductor device is exposed to a temperature higher than the melting temperature of the solder, so that moisture that has been absorbed rapidly expands, resulting in defects such as cracks in the sealing material. .
Furthermore, in recent years, there has been a movement to limit the use of harmful lead from the viewpoint of environmental protection, and lead-free solder has come to be used for mounting solder. Lead-free solder is solder containing conventional lead. It is necessary to have a higher melting temperature and a higher reflow temperature. For this reason, the epoxy resin composition for semiconductor encapsulation corresponding to lead-free solder mounting is required to have more severe solder crack resistance than conventional products. In addition, the novolac epoxy resins and phenols currently in use are also affected by the fact that a part of the cured resin is thermally decomposed due to high temperature, and the generated corrosive substance deteriorates the moisture resistance reliability of the internal semiconductor. Epoxy resin compositions for semiconductor encapsulation that contain a brominated epoxy resin as a flame retardant in a resin hardener cannot be used for lead-free solder mounting in terms of solder crack resistance, high-temperature stability, and moisture resistance reliability. It was.

本発明は、耐ハンダクラック性、高温安定性および耐湿信頼性に優れた硬化物を与える鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物、鉛フリーハンダを用いた高温リフローに適した樹脂封止型半導体装置、さらに鉛フリーハンダを用いた実装信頼性に優れた半導体装置の実装方法を提供することを目的とするものである。   The present invention relates to a lead-free solder mounting epoxy resin composition for semiconductor encapsulation that gives a cured product excellent in solder crack resistance, high-temperature stability, and moisture resistance reliability, and a resin seal suitable for high-temperature reflow using lead-free solder. It is an object of the present invention to provide a mounting method for a semiconductor device having excellent mounting reliability using a stationary semiconductor device and lead-free solder.

本発明者らは、前記の課題を解決するために種々研究を重ねた結果、硬化物の吸湿率と高温保持での重量減少が特定量以下であるエポキシ樹脂組成物を使用することによりその目的を達成できたのである。本発明は、
「1.(a)エポキシ樹脂
(b)エポキシ樹脂用硬化剤
(c)無機充填剤
を必須成分として配合してなり、その硬化物の85℃の相対湿度85%、72時間での吸湿率が0.2%以下であり、空気中240℃、5時間での重量減少が0.5%以下である鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物。
2.(a)成分と(b)成分をその混合物が150℃での溶融粘度が1.0ポイズ以下である組み合わせと使用割合とした、1項に記載された半導体封止用エポキシ樹脂組成物。
3.(b)成分としてエポキシ基と反応する基を持つ硬化剤を用い、全(a)成分中のエポキシ基1モルに対して、全(b)成分中のエポキシ基と反応する基の合計が0.5〜2.0モルである、1項または2項に記載された鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物。
4.(b)成分として、エポキシ基の重合を開始する硬化剤を用い、全(a)成分100重量部に対し(b)成分を0.1〜10重量部用いた、1項または2項に記載された鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物。
5.(c)無機充填剤として、溶融および/または結晶シリカ粉末充填剤を組成物全体の80〜95重量%含有する、1項ないし4項のいずれか1項に記載された半導体封止用エポキシ樹脂組成物。
6.ハロゲン元素の含有量が(a)成分と(b)成分の総合計に対して0.5重量%以下であり、かつその硬化物がUL94規格のV−0相当以上の難燃性を有する、1項ないし5項のいずれか1項に記載された半導体封止用エポキシ樹脂組成物。
7.半導体素子および/または半導体集積回路が1項ないし6項のいずれか1項に記載された半導体封止用エポキシ樹脂組成物の硬化物で封止されている、鉛フリーハンダ実装用樹脂封止型半導体装置。
8.実質的に鉛を含有せず溶融温度が200℃以上のハンダを用い、7項に記載された樹脂封止型半導体装置を配線基盤にハンダ付け実装することを特徴とする半導体装置の実装方法。」
に関する。
As a result of various studies to solve the above-mentioned problems, the inventors of the present invention have achieved the object by using an epoxy resin composition in which the moisture absorption rate of the cured product and the weight reduction at high temperature holding are less than a specific amount. Was achieved. The present invention
“1. (a) Epoxy resin (b) Curing agent for epoxy resin (c) Inorganic filler is blended as an essential component, and the cured product has a relative humidity of 85% at 85 ° C. and a moisture absorption rate at 72 hours. An epoxy resin composition for semiconductor encapsulation corresponding to lead-free solder mounting, which is 0.2% or less and the weight loss after 5 hours in air at 240 ° C. is 0.5% or less.
2. Item 1. The epoxy resin composition for semiconductor encapsulation according to Item 1, wherein the component (a) and the component (b) are used in combination with a combination in which the mixture has a melt viscosity of 1.0 poise or less at 150 ° C.
3. A curing agent having a group that reacts with an epoxy group is used as the component (b), and the total number of groups that react with the epoxy group in the component (b) is 0 with respect to 1 mol of the epoxy group in the component (a). The epoxy resin composition for semiconductor encapsulation corresponding to lead-free solder mounting described in the item 1 or 2, which is 0.5 to 2.0 mol.
4). Item (1) or Item (2), wherein a curing agent that initiates polymerization of an epoxy group is used as component (b), and 0.1 to 10 parts by weight of component (b) is used with respect to 100 parts by weight of component (a). The epoxy resin composition for semiconductor encapsulation corresponding to lead-free solder mounting.
5. (C) The epoxy resin for semiconductor encapsulation according to any one of items 1 to 4, which contains 80 to 95% by weight of a fused and / or crystalline silica powder filler as an inorganic filler, based on the total composition. Composition.
6). The halogen element content is 0.5% by weight or less based on the total amount of the component (a) and the component (b), and the cured product has flame retardancy equivalent to V-0 of UL94 standard, 6. An epoxy resin composition for encapsulating a semiconductor according to any one of items 1 to 5.
7). A resin-encapsulated lead-free solder mounting type in which a semiconductor element and / or a semiconductor integrated circuit is encapsulated with a cured product of the epoxy resin composition for encapsulating a semiconductor according to any one of items 1 to 6 Semiconductor device.
8). A method of mounting a semiconductor device, characterized by soldering and mounting the resin-encapsulated semiconductor device described in item 7 on a wiring board using solder that does not substantially contain lead and has a melting temperature of 200 ° C. or higher. "
About.

本発明の半導体封止用エポキシ樹脂組成物は、耐ハンダクラック性、高温安定性および耐湿信頼性に優れた硬化物を与えるので鉛フリーハンダ実装対応半導体装置の封止に有利に使用することができる。本発明の樹脂封止型半導体装置は、耐ハンダクラック性、高温安定性および耐湿信頼性に優れるので、鉛フリーハンダを用いた実装に有利に使用することができる。本発明の半導体装置の実装方法は、実装信頼性に優れるので鉛フリーハンダを用いた実装に有利に使用することができる。   The epoxy resin composition for semiconductor encapsulation of the present invention provides a cured product excellent in solder crack resistance, high-temperature stability and moisture resistance reliability, so that it can be advantageously used for sealing a semiconductor device compatible with lead-free solder mounting. it can. Since the resin-encapsulated semiconductor device of the present invention is excellent in solder crack resistance, high-temperature stability, and moisture resistance reliability, it can be advantageously used for mounting using lead-free solder. Since the mounting method of the semiconductor device of the present invention is excellent in mounting reliability, it can be advantageously used for mounting using lead-free solder.

溶解温度が高い鉛フリーハンダを用いた実装方法においては、リフロー温度も高くする必要があるが、従来の半導体封止用エポキシ樹脂組成物では、吸湿率が高いために保存中に吸収された水分が高温にさらされた際に急速に膨張し、その結果封止材にクラックが入るなどの不良が発生しやすい。また、熱安定性の悪い臭素化エポキシ樹脂等が配合されているために、高温により熱分解し、ハロゲン化合物等の腐食性物質が発生し、内部の半導体の耐湿信頼性が悪化するなどの弊害もある。
本発明では、低溶融粘度の樹脂系にシリカ充填剤を多量に配合し、吸湿率を低くした上で、熱安定性の悪い成分を配合しないことにより、鉛フリーハンダを用いた高温リフローを実施してもハンダクラックが発生しにくくし、耐湿信頼性の悪化も大巾に改良したものである。
In the mounting method using lead-free solder with a high melting temperature, it is necessary to increase the reflow temperature. However, in the conventional epoxy resin composition for semiconductor encapsulation, moisture absorbed during storage is high due to its high moisture absorption rate. When the material is exposed to a high temperature, it rapidly expands, and as a result, defects such as cracks in the sealing material are likely to occur. In addition, since brominated epoxy resins with poor thermal stability are blended, they are thermally decomposed at high temperatures, corrosive substances such as halogen compounds are generated, and the moisture resistance reliability of internal semiconductors deteriorates. There is also.
In the present invention, high-temperature reflow using lead-free solder is performed by blending a large amount of silica filler into a low melt viscosity resin system, reducing moisture absorption, and not blending components with poor thermal stability. Even so, solder cracks are less likely to occur, and the reliability of moisture resistance is greatly improved.

本発明の半導体封止用エポキシ樹脂組成物で用いられる(a)エポキシ樹脂としては、例えばビスフェノールA、ビスフェノールF、ビスフェノールAD、ビフェノール、テトラメチルビフェノール、テトラメチルビスフェノールF、ハイドロキノン、メチルハイドロキノン、ジブチルハイドロキノン、レゾルシン、メチルレゾルシン、ジヒドロキシジフェニルエーテル、ジヒドロキスチルベン誘導体、ジヒドロキシナフタレン、フェノールノボラック樹脂、クレゾールノボラック樹脂、ナフトールノボラック樹脂、ビスフェノールAノボラック樹脂、フェノールアラルキル樹脂、テルペンフェノール樹脂、ジシクロペンタジエンフェノール樹脂;種々のフェノール類と、ベンズアルデヒド、ヒドロキシベンズアルデヒド、クロトンアルデヒド、グリオキザール等の種々のアルデヒド類との縮合反応で得られる多価フェノール樹脂;重質油類またはピッチ類、フェノール類およびアルデヒド化合物とを重縮合反応させて得られた変性フェノール樹脂等の各種フェノール系化合物と、エピハロヒドリンとから製造されるエポキシ樹脂やジアミノジフェニルメタン、アミノフェノール、キシレンジアミン等の種々のアミン化合物と、エピハロヒドリンとから製造されるエポキシ樹脂、メチルヘキサヒドロキシフタル酸、ダイマー酸等の種々のカルボン酸類と、エピハロヒドリンとから製造されるエポキシ樹脂、水素化ビスフェノールA型エポキシ樹脂、水素化ビスフェノールF型エポキシ樹脂等の水素化エポキシ樹脂、1,2−エポキシエチル−3,4−エポキシシクロヘキサン、3,4−エポキシシクロヘキシルカルボン酸−3,4−エポキシシクロヘキシルメチル、アジピン酸ビス(3,4−エポキシ−6−メチルシクロヘキシルメチル〉等の脂環式エポキシ樹脂等が挙げられる。
これらのエポキシ樹脂は一種単独で用いてもよいし、二種以上混合して使用してもよい。
種々のエポキシ樹脂の中では、入手のしやすさや硬化物性等からビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビフェノール型エポキシ樹脂、テトラメチルビフェノール型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAノボラック型エポキシ樹脂、テルペンフェノール型エポキシ樹脂、ジシクロペンタジエンフェノール型エポキシ樹脂から選ばれた少なくとも一種類のエポキシ樹脂が好ましい。
Examples of the (a) epoxy resin used in the epoxy resin composition for semiconductor encapsulation of the present invention include bisphenol A, bisphenol F, bisphenol AD, biphenol, tetramethylbiphenol, tetramethylbisphenol F, hydroquinone, methylhydroquinone, and dibutylhydroquinone. , Resorcin, methylresorcin, dihydroxydiphenyl ether, dihydrokistilbene derivatives, dihydroxynaphthalene, phenol novolac resin, cresol novolac resin, naphthol novolac resin, bisphenol A novolac resin, phenol aralkyl resin, terpene phenol resin, dicyclopentadiene phenol resin; Phenols, benzaldehyde, hydroxybenzaldehyde, croton aldehyde , Polyhydric phenol resins obtained by condensation reactions with various aldehydes such as glyoxal; various phenols such as modified phenol resins obtained by polycondensation reaction of heavy oils or pitches, phenols and aldehyde compounds Epoxy resins produced from epoxy compounds and epihalohydrins, various amine compounds such as diaminodiphenylmethane, aminophenol and xylenediamine, and epoxy resins produced from epihalohydrins, methylhexahydroxyphthalic acid, dimer acids, etc. Hydrogenated epoxy resins such as epoxy resins produced from carboxylic acids and epihalohydrins, hydrogenated bisphenol A type epoxy resins, hydrogenated bisphenol F type epoxy resins, 1,2-epoxyethyl-3,4-epoxycyclohexane, 3 , - epoxycyclohexyl carboxylate-3,4-epoxy cyclohexylmethyl, alicyclic epoxy resins such as adipic acid bis (3,4-epoxy-6-methylcyclohexyl methyl> and the like.
These epoxy resins may be used individually by 1 type, and may be used in mixture of 2 or more types.
Among various epoxy resins, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenol type epoxy resin, tetramethylbiphenol type epoxy resin, phenol novolac type epoxy resin, cresol novolac type due to availability and cured properties At least one epoxy resin selected from an epoxy resin, a bisphenol A novolac type epoxy resin, a terpene phenol type epoxy resin, and a dicyclopentadiene phenol type epoxy resin is preferable.

次に、本発明の半導体封止用エポキシ樹脂組成物には(b)エポキシ樹脂用硬化剤が必須成分として配合される。
その使用できる硬化剤としては、例えば、ビスフェノールA、ビスフェノールF、ビスフェノールAD、ハイドロキノン、レゾルシン、メチルレゾルシン、ビフェノール、テトラメチルビフェノール、ジヒドロキシナフタレン、ジヒドロキシジフェニルエーテル、フェノールノボラック樹脂、クレゾールノボラック樹脂、ビスフェノールAノボラック樹脂、ジシクロペンタジエンフェノール樹脂、テルペンフェノール樹脂、ナフトールノボラック樹脂、ビフェニルフェノール樹脂等の種々の多価フェノール樹脂、種々のフェノール類と、ヒドロキシベンズアルデヒド、クロトンアルデヒド、グリオキザール等の種々のアルデヒド類との縮合反応で得られる多価フェノール樹脂、および重質油類またはピッチ類、フェノール類およびホルムアルデヒド化合物を重縮合させて得られた変性フェノール樹脂等の各種のフェノール樹脂類、メチルテトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、無水ピロメリット酸、メチルナジック酸等の酸無水物類、ジエチレントリアミン、イソホロンジアミン、ジアミノジフェニルメタン、ジアミノジフェニルスルホン、ジシアンジアミド等のアミン類等が挙げられる。
Next, (b) a curing agent for epoxy resin is blended as an essential component in the epoxy resin composition for semiconductor encapsulation of the present invention.
Examples of the curing agent that can be used include bisphenol A, bisphenol F, bisphenol AD, hydroquinone, resorcin, methylresorcin, biphenol, tetramethylbiphenol, dihydroxynaphthalene, dihydroxydiphenyl ether, phenol novolac resin, cresol novolac resin, bisphenol A novolac resin. Condensation reaction of various polyphenol resins such as dicyclopentadiene phenol resin, terpene phenol resin, naphthol novolak resin, biphenyl phenol resin, and various phenols with various aldehydes such as hydroxybenzaldehyde, crotonaldehyde, and glyoxal Polyhydric phenol resin obtained from the above and heavy oils or pitches, phenols and formaldehyde Various phenolic resins such as modified phenolic resins obtained by polycondensation of hydride compounds, acid anhydrides such as methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, pyromellitic anhydride, methylnadic acid, diethylenetriamine, isophorone Examples include amines such as diamine, diaminodiphenylmethane, diaminodiphenylsulfone, and dicyandiamide.

また、エポキシ基の重合を開始するタイプの硬化剤としては、例えば、トリフェニルホスフィン等のホスフィン化合物、テトラフェニルホスホニウムテトラフェニルボレート等のホスホニウム塩、2−メチルイミダゾール、2−フェニルイミダゾール、2−エチル−4−メチルイミダゾール、2−ウンデシルイミダゾール、1−シアノエチル−2−メチルイミダゾール、2,4−ジシアノ−6−[2−メチルイミダゾリル−(1)]−エチル−S−トリアジン等のイミダゾール類、1−シアノエチル−2−ウンデシルイミダゾリウムトリメリテート、2−メチルイミダゾリウムイソシアヌレート、2−エチル−4−メチルイミダゾリウムテトラフェニルボレート、2−エチル−1,4−ジメチルイミダゾリウムテトラフェニルボレート等のイミダゾリウム塩、2,4,6−トリス(ジメチルアミノメチル)フェノール、ベンジルメチルアミン等のアミン類、トリエチルアンモニウムテトラフェニルボレート等のアンモニウム塩、1,5−ジアザビシクロ(5,4,0)−7−ウンデセン、1,5−ジアザビシクロ(4,3,0)−5−ノネン等のジアザビシクロ化合物、それ等ジアザビシクロ化合物のテトラフェニルボレート、フェノール塩、フェノールノボラック塩、2−エチルヘキサン酸塩等、さらにトリフル酸(Triflic acid)塩、三弗化硼素エーテル錯化合物、金属フルオロ硼素錯塩、ビス(ペルフルオルアルキルスルホニル)メタン金属塩、アリールジアゾニウム化合物、芳香族オニウム塩、IIIa〜Va族元素のジカルボニルキレート、チオピリリウム塩、MF6陰イオン(ここでは燐、アンチモンおよび砒素から選択される)の形のVIb元素、アリールスルホニウム錯塩、芳香族ヨードニウム錯塩、芳香族スルホニウム錯塩、ビス[4−(ジフェニルスルホニオ)フェニル]スルフィド−ビス−ヘキサフルオロ金属塩(例えば燐酸塩、砒酸塩、アンチモン酸塩等)、アリールスルホニウム錯塩、ハロゲン含有錯イオンの芳香族スルホニウムまたはヨードニウム塩等を用いることができる。
(b)成分のエポキシ樹脂用硬化剤は、1種単独でも、2種以上併用してもよい。
それら各種エポキシ樹脂用硬化剤の中ではフェノールノボラック樹脂、テルペンフェノール樹脂、フェノールアラルキル樹脂、ジシクロペンタジエンフェノール樹脂、ビフェニルフェノール樹脂、重質油類またはピッチ類、フェノール類およびアルデヒド化合物を重縮合反応させて得られた変性フェノール樹脂等が硬化物性や入手のしやすさの点から好ましい。
Examples of the curing agent that initiates polymerization of epoxy groups include phosphine compounds such as triphenylphosphine, phosphonium salts such as tetraphenylphosphonium tetraphenylborate, 2-methylimidazole, 2-phenylimidazole, and 2-ethyl. Imidazoles such as -4-methylimidazole, 2-undecylimidazole, 1-cyanoethyl-2-methylimidazole, 2,4-dicyano-6- [2-methylimidazolyl- (1)]-ethyl-S-triazine, 1-cyanoethyl-2-undecylimidazolium trimellitate, 2-methylimidazolium isocyanurate, 2-ethyl-4-methylimidazolium tetraphenylborate, 2-ethyl-1,4-dimethylimidazolium tetraphenylborate, etc. No Dazolium salts, amines such as 2,4,6-tris (dimethylaminomethyl) phenol, benzylmethylamine, ammonium salts such as triethylammonium tetraphenylborate, 1,5-diazabicyclo (5,4,0) -7- Undecene, diazabicyclo compounds such as 1,5-diazabicyclo (4,3,0) -5-nonene, tetraphenylborate, phenol salt, phenol novolak salt, 2-ethylhexanoate and the like of these diazabicyclo compounds, and triflic acid (Triflic acid) salt, boron trifluoride ether complex compound, metal fluoroboron complex salt, bis (perfluoroalkylsulfonyl) methane metal salt, aryldiazonium compound, aromatic onium salt, dicarbonyl chelate of group IIIa to Va element, Thiopyrylium salt MF6 - form of VIb element anions (here chosen phosphorous, antimony and arsenic), arylsulfonium complex salts, aromatic iodonium complex salts, aromatic sulfonium complex salt, bis [4- (diphenylsulfonio) phenyl] sulfide - Bis-hexafluorometal salts (eg, phosphates, arsenates, antimonates, etc.), arylsulfonium complex salts, aromatic sulfonium or iodonium salts of halogen-containing complex ions, and the like can be used.
The epoxy resin curing agent (b) may be used alone or in combination of two or more.
Among these curing agents for epoxy resins, phenol novolac resins, terpene phenol resins, phenol aralkyl resins, dicyclopentadiene phenol resins, biphenyl phenol resins, heavy oils or pitches, phenols and aldehyde compounds are subjected to a polycondensation reaction. The modified phenolic resin obtained in this way is preferable from the viewpoints of cured physical properties and availability.

本発明の半導体封止用エポキシ樹脂組成物で使用される(b)成分の使用割合は、(b)成分としてエポキシ基と反応する基を持つ化合物のみを使用する場合は、全(a)成分中のエポキシ基1モルに対して、全(b)成分中のエポキシ基と反応する基の合計が0.5〜2.0モルになる量が好ましく、より好ましくは、0.7〜1.5モルになる量である。
(b)成分としてエポキシ基の重合を開始するタイプの硬化剤を使用する場合は、全(a)成分100重量部に対して、0.1〜10重量部が好ましく、より好ましくは、0.3〜5重量部である。
本発明の半導体封止用エポキシ樹脂組成物は鉛フリーハンダを用いた高リフローの際のハンダクラックを防止するために、85℃相対湿度85%、72時間での吸湿率が0.2%以下である必要があり、好ましくは0.15%以下である。
吸湿率が高いと高温でクラヅクが発生しやすいため、好ましくない、鉛フリーハンダを用いた高温によるリフロー後の信頼性を維持するためには、240℃の空気中に5時間保持した後の重量減少が0.5%以下であることが必要であり、好ましくは0.3%以下である。
The use ratio of the component (b) used in the epoxy resin composition for semiconductor encapsulation of the present invention is the total component (a) when only a compound having a group that reacts with an epoxy group is used as the component (b). The total amount of the groups that react with the epoxy groups in the component (b) is preferably 0.5 to 2.0 mol, more preferably 0.7 to 1. The amount is 5 mol.
(B) When using the hardening | curing agent of the type which starts the superposition | polymerization of an epoxy group as a component, 0.1-10 weight part is preferable with respect to 100 weight part of all the (a) components, More preferably, it is 0.00. 3 to 5 parts by weight.
The epoxy resin composition for semiconductor encapsulation of the present invention has a relative humidity of 85% at 85 ° C. and a moisture absorption rate at 72 hours of 0.2% or less in order to prevent solder cracks during high reflow using lead-free solder. And preferably 0.15% or less.
If the moisture absorption rate is high, cracks are likely to occur at high temperatures, which is not desirable. To maintain reliability after reflow at a high temperature using lead-free solder, the weight after holding in air at 240 ° C. for 5 hours The reduction needs to be 0.5% or less, preferably 0.3% or less.

本発明の半導体封止用エポキシ樹脂組成物では、吸湿率を低くするためシリカ充填剤を多量に配合する必要がある。そのためには、樹脂系((a)成分と(b)成分の混合物)の溶融粘度を低くすることが必要であり、150℃での溶融粘度が好ましくは1.0ポイズ以下、より好ましくは0.8ポイズ以下、さらに好ましくは0.6ポイズ以下になるよう(a)成分、(b)成分それぞれの種類や混合割合を調整しなければならない。樹脂系の溶融粘度が高すぎるとエポキシ樹脂組成物の流動性が低下し、成形が困難になる。
次に、本発明の半導体封止用エポキシ樹脂組成物には、(c)無機充填剤が配合される。その無機充填剤の種類としては、例えば、溶融シリカ、結晶性シリカ、ガラス粉、アルミナ、炭酸カルシウム等が挙げられる。その形状としては破砕型または球状である。各種の無機充填剤は単独でまたは2種以上混合して用いられるが、それ等の中では溶融シリカまたは結晶性シリカが好ましい。その使用量は、組成物全体の80〜95重量%であり、好ましくは85〜95重量%であり、より好ましくは、87〜93重量%である。 (c)無機充填剤の使用量が少なすぎると、低吸湿性に劣り、結果的に耐ハンダクラック性に劣る。(c)無機充填剤の使用量が多すぎると、成型時の流動性が損なわれる。
本発明のエポキシ樹脂組成物には、必要に応じて、硬化促進剤、難燃剤、難燃助剤、カップリング剤、イオン捕捉剤、可塑剤、顔料、溶剤、離型剤、強化用繊維等を適宜に配合することができる。
In the epoxy resin composition for semiconductor encapsulation of the present invention, it is necessary to blend a large amount of silica filler in order to reduce the moisture absorption rate. For this purpose, it is necessary to lower the melt viscosity of the resin system (mixture of the components (a) and (b)), and the melt viscosity at 150 ° C. is preferably 1.0 poise or less, more preferably 0. The type and mixing ratio of each of the component (a) and the component (b) must be adjusted so that they are 0.8 poise or less, more preferably 0.6 poise or less. If the melt viscosity of the resin system is too high, the flowability of the epoxy resin composition is lowered and molding becomes difficult.
Next, (c) inorganic filler is mix | blended with the epoxy resin composition for semiconductor sealing of this invention. Examples of the inorganic filler include fused silica, crystalline silica, glass powder, alumina, calcium carbonate, and the like. Its shape is crushing or spherical. Various inorganic fillers may be used alone or in combination of two or more. Among them, fused silica or crystalline silica is preferable. The amount used is 80 to 95% by weight of the total composition, preferably 85 to 95% by weight, and more preferably 87 to 93% by weight. (C) When there is too little usage-amount of an inorganic filler, it is inferior to low hygroscopicity, and is inferior to solder crack resistance as a result. (C) When there is too much usage-amount of an inorganic filler, the fluidity | liquidity at the time of shaping | molding will be impaired.
If necessary, the epoxy resin composition of the present invention includes a curing accelerator, a flame retardant, a flame retardant aid, a coupling agent, an ion scavenger, a plasticizer, a pigment, a solvent, a release agent, a reinforcing fiber, and the like. Can be blended appropriately.

その硬化促進剤は、エポキシ樹脂中のエポキシ基と硬化剤中の活性基との反応を促進する化合物であり、トリブチルホスフィン、トリフェニルホスフィン等のホスフィン化合物、テトラフェニルホスホニウムテトラフェニルボレートなどのホスホニウム塩、2−メチルイミダゾール、2−フェニルイミダゾール、2−エチル−4−メチルイミダゾールなどのイミダゾール類、2,4,6−トリス(ジメチルアミノメチル)フェノール、ベンジルジメチルアミンなどのアミン類、トリエチルアンモニウムテトラフェニルボレートなどのアンモニウム塩、1,5−ジアザビシクロ(5,4,0)−7−ウンデセンなどのジアザビシクロ化合物、それ等ジアザビシクロ化合物のテトラフェニルボレート、フェノール塩、フェノールノボラック塩、2−エチルヘキサン酸塩などが挙げられる。
一般に半導体封止用エポキシ樹脂組成物には、難燃性を付与することが求められるため、臭素化エポキシ樹脂等のハロゲン化合物を難燃剤とし添加することが多い。しかし、鉛フリーハンダを用いたリフロー時の高温による熱分解でハロゲンイオン等が発生し電気特性等に悪影響を与えるため、ハロゲン系難燃剤は配合しないことが好ましい。ハロゲン元素は原料中の不純物として持ち込まれることもあるが、その量も含め(a)成分と(b)成分の総合計に対して0.5重量%以下とすることが好ましく、より好ましくは0.3重量%以下、さらに好ましくは0.1重量%以下である。硬化物の難燃性は電気電子部品や機器の規格により義務づけられているため、UL94規格のV−0相当以上の難燃性を有さなければならない、
The curing accelerator is a compound that promotes the reaction between the epoxy group in the epoxy resin and the active group in the curing agent, and a phosphine compound such as tributylphosphine and triphenylphosphine, and a phosphonium salt such as tetraphenylphosphonium tetraphenylborate. , Imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, amines such as 2,4,6-tris (dimethylaminomethyl) phenol, benzyldimethylamine, triethylammonium tetraphenyl Ammonium salts such as borate, diazabicyclo compounds such as 1,5-diazabicyclo (5,4,0) -7-undecene, tetraphenylborate, phenol salt, phenol novolac salt of these diazabicyclo compounds, 2 Such as ethylhexanoic acid salts.
In general, since epoxy resin compositions for semiconductor encapsulation are required to impart flame retardancy, halogen compounds such as brominated epoxy resins are often added as flame retardants. However, it is preferable not to add a halogen-based flame retardant, because halogen ions and the like are generated by thermal decomposition at a high temperature during reflow using lead-free solder and adversely affect electrical characteristics. Although the halogen element may be brought in as an impurity in the raw material, the total amount of the component (a) and the component (b) including the amount thereof is preferably 0.5% by weight or less, more preferably 0%. .3% by weight or less, more preferably 0.1% by weight or less. Since the flame retardancy of the cured product is obligated by the standards of electrical and electronic parts and equipment, it must have flame retardancy equivalent to UL94 standard V-0 or higher.

ハロゲン系難燃剤の代わりに、リン酸エステル類、ホスフィン類等のリン系難燃剤、メラミン誘導体等の窒素系難燃剤および水酸化アルミニウム、水酸化マグネシウム等の無機系難燃剤を使用することができるが、これらの物質も高温下で腐食性物質を発生したり、吸湿性を悪化させたりするため、使用しないか必要最小限とすることが好ましい。
エポキシ樹脂組成物の難燃性は、エポキシ樹脂、硬化剤、無機充填剤およびその他の添加剤等の種類や配合割合により大きく変化する。本発明の半導体封止用エポキシ樹脂組成物においては、吸湿率と重量減少を所定の値以下に保ったまま必要程度以上の難燃性が発現するよう各成分の種類や配合割合を調整する必要がある。
Instead of halogen flame retardants, phosphorus flame retardants such as phosphate esters and phosphines, nitrogen flame retardants such as melamine derivatives, and inorganic flame retardants such as aluminum hydroxide and magnesium hydroxide can be used. However, since these substances also generate corrosive substances at high temperatures and deteriorate the hygroscopicity, it is preferable not to use them or to minimize them.
The flame retardancy of the epoxy resin composition varies greatly depending on the type and blending ratio of the epoxy resin, the curing agent, the inorganic filler, and other additives. In the epoxy resin composition for semiconductor encapsulation of the present invention, it is necessary to adjust the types and blending ratios of the respective components so that the necessary flame retardance is exhibited while maintaining the moisture absorption rate and weight reduction below the predetermined values. There is.

本発明の樹脂封止型半導体装置は、集積回路、大規模集積回路、トランジスタ、サイリスタ、ダイオード等の半導体素子および/または半導体集積回路が本発明の半導体封止用エポキシ樹脂組成物の硬化物で封止されている鉛フリーハンダ実装用樹脂半導体装置であり、半導体素子および/または半導体集積回路の種類、封止方法、パッケージ形状等には特に限定されない。
その封止方法としては、常温で固形のエポキシ樹脂組成物を用いた低圧トランスファー成形法、インジェクション成形法、常温で液状のエポキシ樹脂組成物を用いたポッティング法、スクリーン印刷法、アンダーフィル法等である、成形後の硬化条件は、エポキシ樹脂組成物の各成分の種類や、配合量により異なるが、通常、150〜220℃の温度で30秒から10時間である。
樹脂封止型半導体装置のパッケージ形状は、DIP、ZIP、SOP、SOJ、QFP等のリードフレームタイプ、BGAなどの片面封止タイプ、TAB、CSP等である、
In the resin-encapsulated semiconductor device of the present invention, a semiconductor element such as an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, or a diode and / or a semiconductor integrated circuit is a cured product of the epoxy resin composition for semiconductor encapsulation of the present invention. It is a sealed resin semiconductor device for lead-free solder mounting, and is not particularly limited to the type of semiconductor element and / or semiconductor integrated circuit, sealing method, package shape, and the like.
The sealing method includes low-pressure transfer molding method using a solid epoxy resin composition at room temperature, injection molding method, potting method using a liquid epoxy resin composition at room temperature, screen printing method, underfill method, etc. Certain curing conditions after molding vary depending on the types and blending amounts of the components of the epoxy resin composition, but are usually from 30 seconds to 10 hours at a temperature of 150 to 220 ° C.
The package shape of the resin-encapsulated semiconductor device is a lead frame type such as DIP, ZIP, SOP, SOJ, and QFP, a single-side encapsulated type such as BGA, TAB, and CSP.

本発明の半導体装置の実装方法は、鉛フリーハンダを用い本発明の樹脂封止型半導体装置を配線基盤にハンダ付け実装することを特徴とする半導体装置の実装方法である。
本発明の実装方法で使用される鉛フリーハンダは、Sn−Ag系、Sn−Ag−Cu系、Sn−Ag−Bi系、Sn−Bi系、Sn−Bi−Ag−Cu系、Sn−Cu系、Sn−Zn系、Sn−Zn−Bi系等の鉛を実質的に含有しないハンダであり、それらの溶解温度は、一般的に200℃以上である。
そのリフロー方法は、赤外線リフロー、ハンダ浴ディップ、ベイパーフェーズリフロー、熱風リフロー等であり、加熱温度はハンダの溶解温度より30〜60℃高い温度が必要である。
本発明の半導体封止用エポキシ樹脂組成物は、耐ハンダクラック性、高温安定性および耐湿信頼性に優れた硬化物を与えるので鉛フリーハンダ実装対応半導体装置の封止に有利に使用することができる、本発明の樹脂封止型半導体装置は、耐ハンダクラック性、高温安定性および耐湿信頼性に優れるので、鉛フリーハンダを用いた実装に有利に使用することができる。本発明の半導体装置の実装方法は、実装信頼性に優れるので鉛フリーハンダを用いた実装に有利に使用することができる。
The semiconductor device mounting method of the present invention is a semiconductor device mounting method characterized by soldering and mounting the resin-encapsulated semiconductor device of the present invention on a wiring board using lead-free solder.
Lead-free solders used in the mounting method of the present invention are Sn-Ag, Sn-Ag-Cu, Sn-Ag-Bi, Sn-Bi, Sn-Bi-Ag-Cu, Sn-Cu. Solder that does not substantially contain lead, such as a Sn-Zn-based or Sn-Zn-Bi-based solder, and their melting temperature is generally 200 ° C. or higher.
The reflow method includes infrared reflow, solder bath dip, vapor phase reflow, hot air reflow, and the like, and the heating temperature needs to be 30 to 60 ° C. higher than the melting temperature of the solder.
The epoxy resin composition for semiconductor encapsulation of the present invention provides a cured product excellent in solder crack resistance, high-temperature stability and moisture resistance reliability, so that it can be advantageously used for sealing a semiconductor device compatible with lead-free solder mounting. Since the resin-encapsulated semiconductor device of the present invention is excellent in solder crack resistance, high temperature stability and moisture resistance reliability, it can be advantageously used for mounting using lead-free solder. Since the mounting method of the semiconductor device of the present invention is excellent in mounting reliability, it can be advantageously used for mounting using lead-free solder.

以下に、本発明の半導体封止用エポキシ樹脂組成物、樹脂封止型半導体装置および半導体装置の実装方法を実施例および比較例を上げてさらに詳述する。
実施例1〜5および比較例1及び2
表1に示したように、(a)エポキシ樹脂として、クレゾールノボラック型エポキシ樹脂、テトラメチルビフェノール型エポキシ樹脂またはビスフェノール型エポキシ樹脂、および難燃剤として臭素化ビスフェノールA型エポキシ樹脂、(b)エポキシ樹脂用硬化剤としてフェノールアラルキル樹脂、フェノールノボラック樹脂、または重質油類またはピッチ類、フェノール類およびアルデヒド化合物とを重縮合反応させて得られた変性フェノール樹脂、(c)無機充填剤として球状溶融シリカ粉末、硬化促進剤としてトリフェニルホスフィン、難燃助剤として三酸化アンチモン、離型剤としてカルナバワックス、シランカップリング剤としてエポキシシランを用いて、各半導体封止用エポキシ樹脂組成物を配合した。次いで、各配合物をミキシングロールを用いて、70〜130℃の温度で5分間溶融混合した、得られた各溶融混合物はシート状に取り出し、粉砕して各成形材料を得た。
これらの各成形材料を用い低圧トランスファー成形機で金型温度180℃、成形時間90秒で成形して、各試験片および160ピンTQFP型樹脂封止型半導体装置を得、180℃で5時聞ポストキュアーさせた。各成形材料のポストキュアー後の吸湿率、重量減少および難燃性を試験した結果を表1に示した。
さらに各樹脂封止型半導体装置をSn−Ag−Cu系鉛フリーハンダ(溶解温度220℃)を用い、260℃の赤外線リフローで配線基盤に実装した。実装後の耐ハンダクラック性と耐湿信頼性を試験した結果も表1に示した、実施例1〜5の各組成物は、比較例1及び2の組成物に較べて耐ハンダクラック性および耐湿信頼性のバランスが大巾に優れていた。
Hereinafter, the epoxy resin composition for semiconductor encapsulation, the resin-encapsulated semiconductor device, and the method for mounting the semiconductor device of the present invention will be described in further detail with reference to examples and comparative examples.
Examples 1-5 and Comparative Examples 1 and 2
As shown in Table 1, (a) cresol novolac type epoxy resin, tetramethylbiphenol type epoxy resin or bisphenol type epoxy resin as epoxy resin, and brominated bisphenol A type epoxy resin as flame retardant, (b) epoxy resin Phenol aralkyl resin, phenol novolac resin, or heavy oils or pitches, modified phenol resin obtained by polycondensation reaction with phenols and aldehyde compound, (c) spherical fused silica as inorganic filler Each semiconductor sealing epoxy resin composition was blended using powder, triphenylphosphine as a curing accelerator, antimony trioxide as a flame retardant aid, carnauba wax as a release agent, and epoxysilane as a silane coupling agent. Subsequently, each compound was melt-mixed at a temperature of 70 to 130 ° C. for 5 minutes using a mixing roll, and each obtained melt mixture was taken out into a sheet and pulverized to obtain each molding material.
Each of these molding materials was molded with a low-pressure transfer molding machine at a mold temperature of 180 ° C. and a molding time of 90 seconds to obtain each test piece and a 160-pin TQFP-type resin-encapsulated semiconductor device. Post cure. Table 1 shows the results of testing the moisture absorption rate, weight loss, and flame retardancy of each molding material after post-curing.
Further, each resin-encapsulated semiconductor device was mounted on a wiring board by infrared reflow at 260 ° C. using Sn—Ag—Cu-based lead-free solder (melting temperature: 220 ° C.). The results of testing the solder crack resistance after mounting and the moisture resistance reliability are also shown in Table 1, and each composition of Examples 1 to 5 is more resistant to solder cracking and moisture than the compositions of Comparative Examples 1 and 2. The balance of reliability was excellent.

Figure 2011058003
Figure 2011058003

(註)
*1:A;テトラメチルビフェノール型エポキシ樹脂(油化シェルエポキシ社商品名 エピコートYX4000H、エポキシ当量:193)
*2:B;テトラメチルビフェノール型エポキシ樹脂とビフェノール型エポキシ樹脂の混合物(油化シェルエポキシ社商品名 エピコートYL6121H、エポキシ当量:171)
*3:C;オルソクレゾールノボラック型エポキシ樹脂とビフェノール型エポキシ樹脂の混合物(油化シェルエポキシ社商品名 エピコートYL6640、エポキシ当量:193)
*4:D;オルソクレゾールノボラック型エポキシ樹脂〈油化シェルエポキシ社商品名 工ピコート180S65、エポキシ当量:212)
*5:臭素化ビスフェノールA型エポキシ樹脂(油化シェルエポキシ社商品名 エピコート5050、エポキシ当量:385、臭素含有量:49%〉
*6:E;フェノールノボラック樹脂(群栄化学社製、水酸基当量:105)
*7:F;フェノールアラルキル樹脂(三井化学社商品名 ミレックスXL225−3L、水酸基当量170)
*8*G;重質油類またはピッチ類、フェノール類およびアルデヒド化合物とを重縮合反応させて得られた変性フェノール樹脂(鹿島石油社商品名 FPI5167、水酸基当量:165)
*9:(a)成分および(b)成分の使用割合での混合物の溶融粘度
*10:各原料のハロゲン含有量から算出
*11:球状溶融シリカ粉末(日本アエロジル社商品名 ELSIL BF100)
*12:エポキシシラン(信越化学工業社商品名 KBM−403)
*13:85℃、85%RH 72時間後の吸湿率
*14:240℃の空気中に5時間保持した後の重量減少
*15:UL−94に従って測定
*16:160ピンTQFP16個を85℃、85%RHにおいて168時間吸湿後、260℃赤外線リフローを行ない、クラックの発生した個数を求めた。
*17:実装後の160ピンTQFPで不飽和型PCTバイアステスト(130℃、85%RH V=50V)を行ない、平均故障寿命を求めた。
(註)
* 1: A; Tetramethylbiphenol type epoxy resin (Oilized Shell Epoxy, trade name: Epicoat YX4000H, epoxy equivalent: 193)
* 2: B: Mixture of tetramethylbiphenol type epoxy resin and biphenol type epoxy resin (Oilized Shell Epoxy, trade name: Epicoat YL6121H, epoxy equivalent: 171)
* 3: C: Mixture of orthocresol novolac type epoxy resin and biphenol type epoxy resin (Oka Chemical Shell Epoxy Co., Ltd., Epicoat YL6640, epoxy equivalent: 193)
* 4: D: Orthocresol novolac type epoxy resin (Oilized Shell Epoxy Corporation, trade name: Picoat 180S65, epoxy equivalent: 212)
* 5: Brominated bisphenol A type epoxy resin (Oilized Shell Epoxy product name Epicoat 5050, epoxy equivalent: 385, bromine content: 49%)
* 6: E; phenol novolac resin (manufactured by Gunei Chemical Co., hydroxyl equivalent: 105)
* 7: F: Phenol aralkyl resin (trade name: Mitex XL225-3L, hydroxyl equivalent: 170, Mitsui Chemicals)
* 8 * G: Modified phenol resin obtained by polycondensation reaction of heavy oils or pitches, phenols and aldehyde compounds (trade name: FPI5167, hydroxyl equivalent: 165, Kashima Oil Co., Ltd.)
* 9: Melt viscosity of the mixture at the use ratio of component (a) and component (b) * 10: Calculated from the halogen content of each raw material * 11: Spherical fused silica powder (Nippon Aerosil Co., Ltd., trade name ERISL BF100)
* 12: Epoxy silane (trade name KBM-403, Shin-Etsu Chemical Co., Ltd.)
* 13: 85 ° C, 85% RH Hygroscopicity after 72 hours * 14: Weight loss after holding in 240 ° C air for 5 hours * 15: Measured according to UL-94 * 16: 85 160 ° C TQFP 16 pieces After absorbing moisture for 168 hours at 85% RH, 260 ° C. infrared reflow was performed to determine the number of cracks.
* 17: An unsaturated PCT bias test (130 ° C., 85% RH V = 50 V) was performed on the 160-pin TQFP after mounting, and the average failure life was obtained.

Claims (8)

(a)エポキシ樹脂
(b)エポキシ樹脂用硬化剤
(c)無機充填剤
を必須成分として配合してなり、その硬化物の85℃の相対湿度85%、72時間での吸湿率が0.2%以下であり、空気中240℃、5時間での重量減少が0.5%以下である鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物。
(A) Epoxy resin (b) Curing agent for epoxy resin (c) An inorganic filler is blended as an essential component, and the cured product has a relative humidity of 85% at 85 ° C. and a moisture absorption rate at 72 hours of 0.2%. % Epoxy resin composition for lead-free solder mounting that is less than 0.5% and the weight loss in air at 240 ° C. for 5 hours is 0.5% or less.
(a)成分と(b)成分をその混合物が150℃での溶融粘度が1.0ポイズ以下である組み合わせと使用割合とした、請求項1に記載された半導体封止用エポキシ樹脂組成物。 The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the component (a) and the component (b) are used in combination with a combination in which the mixture has a melt viscosity at 150 ° C. of 1.0 poise or less. (b)成分としてエポキシ基と反応する基を持つ硬化剤を用い、全(a)成分中のエポキシ基1モルに対して、全(b)成分中のエポキシ基と反応する基の合計が0.5〜2.0モルである、請求項1または2に記載された鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物。 A curing agent having a group that reacts with an epoxy group is used as the component (b), and the total number of groups that react with the epoxy group in the component (b) is 0 with respect to 1 mol of the epoxy group in the component (a). The epoxy resin composition for semiconductor encapsulation corresponding to lead-free solder mounting according to claim 1 or 2, which is 0.5 to 2.0 mol. (b)成分として、エポキシ基の重合を開始する硬化剤を用い、全(a)成分100重量部に対し(b)成分を0.1〜10重量部用いた、請求項1または2に記載された鉛フリーハンダ実装対応半導体封止用エポキシ樹脂組成物。 The hardener which starts superposition | polymerization of an epoxy group is used as (b) component, and 0.1-10 weight part of (b) component was used with respect to 100 weight part of all (a) components, The claim 1 or 2 The epoxy resin composition for semiconductor encapsulation corresponding to lead-free solder mounting. (c)無機充填剤として、溶融および/または結晶シリカ粉末充填剤を組成物全体の80〜95重量%含有する、請求項1ないし4のいずれか1項に記載された半導体封止用エポキシ樹脂組成物。 (C) The epoxy resin for semiconductor encapsulation according to any one of claims 1 to 4, which contains 80 to 95% by weight of a fused and / or crystalline silica powder filler as an inorganic filler based on the total composition. Composition. ハロゲン元素の含有量が(a)成分と(b)成分の総合計に対して0.5重量%以下であり、かつその硬化物がUL94規格のV−0相当以上の難燃性を有する、請求項1ないし5のいずれか1項に記載された半導体封止型エポキシ樹脂組成物。   The halogen element content is 0.5% by weight or less based on the total amount of the component (a) and the component (b), and the cured product has flame retardancy equivalent to V-0 of UL94 standard, The semiconductor sealing type epoxy resin composition described in any one of Claims 1 thru | or 5. 半導体素子および/または半導体集積回路が請求項1ないし6のいずれか1項に記載された半導体封止用エポキシ樹脂組成物の硬化物で封止されている、鉛フリーハンダ実装用樹脂封止型半導体装置。   A resin-encapsulated type for mounting lead-free solder, wherein the semiconductor element and / or the semiconductor integrated circuit is encapsulated with a cured product of the epoxy resin composition for encapsulating a semiconductor according to any one of claims 1 to 6. Semiconductor device. 実質的に鉛を含有せず溶融温度が200℃以上のハンダを用い、請求項7に記載された樹脂封止型半導体装置を配線基盤にハンダ付け実装することを特徴とする半導体装置の実装方法。











A method of mounting a semiconductor device, characterized by soldering and mounting the resin-encapsulated semiconductor device according to claim 7 on a wiring board using solder that does not substantially contain lead and has a melting temperature of 200 ° C. or higher. .











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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014194959A (en) * 2013-03-28 2014-10-09 Nitto Denko Corp Resin sheet for electronic device sealing, and method for manufacturing electronic device package

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01272619A (en) * 1987-07-22 1989-10-31 Mitsubishi Gas Chem Co Inc Epoxy resin composition
JPH02235918A (en) * 1989-03-09 1990-09-18 Mitsubishi Electric Corp Epoxy resin composition for semiconductor sealing
JPH07247409A (en) * 1994-03-10 1995-09-26 Dainippon Ink & Chem Inc Epoxy resin composition, production of epoxy resin mixture and material for sealing semiconductor
JPH08164495A (en) * 1994-10-11 1996-06-25 Hitachi Ltd Leadless solder for connecting organic substrate, and mounted substrate using it
JPH08206874A (en) * 1995-02-06 1996-08-13 Matsushita Electric Ind Co Ltd Solder material
JPH08311159A (en) * 1995-05-17 1996-11-26 Matsushita Electric Works Ltd Epoxy resin composition, its production and semiconductor device using the same
JPH0977958A (en) * 1995-07-10 1997-03-25 Toray Ind Inc Epoxy resin composition and semiconductor device
JPH09129786A (en) * 1995-10-30 1997-05-16 Matsushita Electric Works Ltd Semiconductor device
JPH10214927A (en) * 1997-01-30 1998-08-11 Hitachi Chem Co Ltd Epoxy resin molding material for electronic part sealing and electronic part
JPH10292094A (en) * 1997-02-20 1998-11-04 Toshiba Corp Epoxy resin composition, resin-sealed semiconductor device prepared by using the sane, epoxy resin molding material, and composite epoxy resin tablet
JPH1160914A (en) * 1997-08-26 1999-03-05 Matsushita Electric Works Ltd Epoxy resin composition and semiconductor device
JPH11343286A (en) * 1998-05-29 1999-12-14 Yuka Shell Epoxy Kk Epoxy compound and its production
JP2000017150A (en) * 1998-06-29 2000-01-18 Shin Etsu Chem Co Ltd Epoxy resin composition for sealing semiconductor and semiconductor device
JP2000095922A (en) * 1998-09-21 2000-04-04 Yuka Shell Epoxy Kk Epoxy resin composition for semiconductor sealing
JP2000126890A (en) * 1999-11-08 2000-05-09 Matsushita Electric Ind Co Ltd Soldering material
JP2000159981A (en) * 1998-11-30 2000-06-13 Hitachi Chem Co Ltd Epoxy resin molding material for sealing use and electronic component device

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01272619A (en) * 1987-07-22 1989-10-31 Mitsubishi Gas Chem Co Inc Epoxy resin composition
JPH02235918A (en) * 1989-03-09 1990-09-18 Mitsubishi Electric Corp Epoxy resin composition for semiconductor sealing
JPH07247409A (en) * 1994-03-10 1995-09-26 Dainippon Ink & Chem Inc Epoxy resin composition, production of epoxy resin mixture and material for sealing semiconductor
JPH08164495A (en) * 1994-10-11 1996-06-25 Hitachi Ltd Leadless solder for connecting organic substrate, and mounted substrate using it
JPH08206874A (en) * 1995-02-06 1996-08-13 Matsushita Electric Ind Co Ltd Solder material
JPH08311159A (en) * 1995-05-17 1996-11-26 Matsushita Electric Works Ltd Epoxy resin composition, its production and semiconductor device using the same
JPH0977958A (en) * 1995-07-10 1997-03-25 Toray Ind Inc Epoxy resin composition and semiconductor device
JPH09129786A (en) * 1995-10-30 1997-05-16 Matsushita Electric Works Ltd Semiconductor device
JPH10214927A (en) * 1997-01-30 1998-08-11 Hitachi Chem Co Ltd Epoxy resin molding material for electronic part sealing and electronic part
JPH10292094A (en) * 1997-02-20 1998-11-04 Toshiba Corp Epoxy resin composition, resin-sealed semiconductor device prepared by using the sane, epoxy resin molding material, and composite epoxy resin tablet
JPH1160914A (en) * 1997-08-26 1999-03-05 Matsushita Electric Works Ltd Epoxy resin composition and semiconductor device
JPH11343286A (en) * 1998-05-29 1999-12-14 Yuka Shell Epoxy Kk Epoxy compound and its production
JP2000017150A (en) * 1998-06-29 2000-01-18 Shin Etsu Chem Co Ltd Epoxy resin composition for sealing semiconductor and semiconductor device
JP2000095922A (en) * 1998-09-21 2000-04-04 Yuka Shell Epoxy Kk Epoxy resin composition for semiconductor sealing
JP2000159981A (en) * 1998-11-30 2000-06-13 Hitachi Chem Co Ltd Epoxy resin molding material for sealing use and electronic component device
JP2000126890A (en) * 1999-11-08 2000-05-09 Matsushita Electric Ind Co Ltd Soldering material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014194959A (en) * 2013-03-28 2014-10-09 Nitto Denko Corp Resin sheet for electronic device sealing, and method for manufacturing electronic device package

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