JP2011040748A - ヘテロ接合バイポーラ・トランジスタ及びその製造方法 - Google Patents
ヘテロ接合バイポーラ・トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP2011040748A JP2011040748A JP2010178911A JP2010178911A JP2011040748A JP 2011040748 A JP2011040748 A JP 2011040748A JP 2010178911 A JP2010178911 A JP 2010178911A JP 2010178911 A JP2010178911 A JP 2010178911A JP 2011040748 A JP2011040748 A JP 2011040748A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- layer
- metal
- selectively
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 70
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052802 copper Inorganic materials 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 18
- 229910052718 tin Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 15
- 230000000873 masking effect Effects 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000013461 design Methods 0.000 description 59
- 238000012938 design process Methods 0.000 description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 13
- 238000012545 processing Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 238000004088 simulation Methods 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 241001077531 Cabares Species 0.000 description 1
- 229910016347 CuSn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000547 structure data Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
Abstract
【解決手段】 ヘテロ接合バイポーラ・トランジスタに関連する、半導体構造体及び半導体の製造方法が提供される。この方法は、同じ配線レベルにある金属導線によって接続される2つのデバイスを形成することを含む。2つのデバイスの第1のものの金属導線は、銅配線構造体上に金属キャップ層を選択的に形成することによって形成される。
【選択図】 図5
Description
12:基板
14:コレクタ
16:ベース
18:エミッタ
20:FET
22:誘電体
24a、24b、24c、24d:配線構造体
26、28:配線層
30:フォトレジスト
32:トレンチ
34:金属
36:マスク層
38:金属層
Claims (20)
- 同じ配線レベルにある金属導線によって接続される2つのデバイスを形成する方法であって、前記2つのデバイスのうちの第1のものの前記金属導線は、銅配線構造体上に金属キャップ層を選択的に形成することによって形成される、前記方法。
- 前記銅配線構造体は、ヘテロ接合バイポーラ・トランジスタのエミッタ、コレクタ及びベースに電気的に接続されるように形成される、請求項1に記載の方法。
- 前記金属キャップ層は、前記銅配線構造体上に選択的に堆積されたCoWPである、請求項1に記載の方法。
- 前記金属キャップ層は、前記銅配線構造体内にエッチングされたトレンチ内に堆積されたTaN又はTiNである、請求項1に記載の方法。
- 前記選択的に形成することは、前記銅配線構造体をエッチングしてトレンチを形成し、前記トレンチ内に前記金属キャップ層を選択的に堆積させることを含む、請求項2に記載の方法。
- 前記トレンチ内に前記金属キャップ層を選択的に堆積させる間、電界効果トランジスタ(FET)の銅配線構造体をマスクすることをさらに含む、請求項5に記載の方法。
- 隣接するFETの銅キャップ層をマスクで保護することをさらに含み、前記金属キャップ層を選択的に形成することは、CoWPを前記銅配線構造体上にのみ選択的に堆積させることを含む、請求項2に記載の方法。
- 前記銅配線構造体及びFETの銅層上にレジストを堆積させることと、
前記FETの前記銅層が前記レジストによってマスクされたままにしながら、前記レジストをパターン形成して、前記銅配線構造体の表面を露出させることと、
前記銅配線構造体内にトレンチを形成することと、
をさらに含み、
前記銅配線構造体上に前記金属キャップ層を選択的に形成することは、前記トレンチ内に金属を堆積させることを含む、請求項2に記載の方法。 - 前記銅配線構造体及びFETの銅キャップ層上にSiCNのマスク層を堆積させることと、
前記マスク層をパターン形成して、前記銅配線構造体を露出させることであって、前記レジストは前記FETの前記銅キャップ層上に残ったままである、前記露出させることと、
をさらに含み、
前記金属キャップ層を選択的に形成することは、前記露出された銅配線構造体上に選択的な金属を堆積させることを含む、請求項2に記載の方法。 - 前記露出された銅配線構造体を腐食させないように、前記露出された銅配線構造体を無酸素環境中で希フッ化水素酸(DHF)によって剥離することをさらに含む、請求項9に記載の方法。
- 前記選択的に堆積させることは、
前記金属キャップ層及びその間の空間上にSn層を堆積させることと、
前記Sn層をアニールすることと、
湿式エッチング・プロセスによって前記空間上の未反応のSnを除去して、前記銅配線構造体上に前記金属キャップ層を選択的に形成することと、
を含む、請求項1に記載の方法。 - 半導体を形成する方法であって、
ヘテロ接合バイポーラ・トランジスタ(HBT)のエミッタ、ベース及びコレクタを形成することと、
前記HBTに隣接して電界効果トランジスタ(FET)を形成することと、
前記FET、並びに前記HBTの前記エミッタ、ベース及びコレクタに電気的に接続している配線構造体を形成することと、
前記配線構造体に電気的に接続している銅配線層を形成することと、
前記エミッタ、ベース及びコレクタに電気的に接続している前記配線構造体上に金属導電性材料を選択的に形成することと、
を含む方法。 - 前記金属導電性材料を選択的に形成することは、前記エミッタ、ベース及びコレクタの前記配線構造体に電気的に接続している前記銅配線層をエッチングして、内部にトレンチを形成し、前記トレンチ内に前記金属導電性材料を選択的に堆積させることを含む、請求項12に記載の方法。
- 前記金属導電性材料は、TiN又はTaNである、請求項13に記載の方法。
- 前記トレンチ内に前記金属導電性材料を選択的に堆積させる間、前記FETの前記銅配線層をマスクすることをさらに含む、請求項13に記載の方法。
- 前記FETの前記銅配線層をマスクでマスクすることをさらに含み、前記選択的に形成することは、CoWPを前記銅配線構造体上にのみ選択的に堆積させることを含む、請求項12に記載の方法。
- 前記銅配線層上にレジストを堆積させることと、
前記FETの前記銅配線層が前記レジストによってマスクされたままにしながら、前記レジストをパターン形成して、前記エミッタ、ベース及びコレクタの前記配線構造体と電気的に接続している前記銅配線層の表面を露出させることと、
前記エミッタ、ベース及びコレクタの前記配線構造体と電気的に接続している前記銅配線層内にトレンチを形成することと、
をさらに含み、
前記エミッタ、ベース及びコレクタに電気的に接続している前記配線構造体上に金属導電性材料を選択的に形成することは、前記トレンチ内に金属を堆積させることを含む、請求項12に記載の方法。 - 前記金属導電性材料を選択的に形成することは、
前記エミッタ、ベース及びコレクタの前記配線構造体と電気的に接続している前記銅配線層、並びにその間の空間上にSn層を堆積させることと、
前記Sn層をアニールすることと、
湿式エッチング・プロセスによって未反応のSnを除去して、前記エミッタ、ベース及びコレクタの前記配線構造体と電気的に接続している前記銅配線層上に前記金属導電性材料を選択的に形成することと、
を含む、請求項12に記載の方法。 - コレクタ、ベース及びエミッタを含むヘテロ接合バイポーラ・トランジスタ(HBT)と、
前記コレクタ、ベース及びエミッタと電気的に接続している配線構造体と、
前記配線構造体上に堆積された銅キャップ層と、
前記銅キャップ層上に堆積された銅に対して選択的な金属と、
前記選択的な金属がない銅配線構造体を含む、前記HBTに隣接したFETと、
を含む構造体。 - 銅配線構造体上に金属キャップ層を含む、金属導線に接続された第1のデバイスと、
前記第1のデバイスの前記金属導線と同じレベルにある金属導線に接続され、かつ、前記銅配線構造体上に前記金属キャップ層がない第2のデバイスと、
を含む構造体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/539,284 US8237191B2 (en) | 2009-08-11 | 2009-08-11 | Heterojunction bipolar transistors and methods of manufacture |
US12/539284 | 2009-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011040748A true JP2011040748A (ja) | 2011-02-24 |
JP5739123B2 JP5739123B2 (ja) | 2015-06-24 |
Family
ID=43588078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010178911A Expired - Fee Related JP5739123B2 (ja) | 2009-08-11 | 2010-08-09 | 半導体構造体及びこれの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US8237191B2 (ja) |
JP (1) | JP5739123B2 (ja) |
KR (1) | KR20110016395A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103050519B (zh) * | 2012-01-06 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 锗硅hbt器件及制造方法 |
US8941089B2 (en) * | 2012-02-22 | 2015-01-27 | Adesto Technologies Corporation | Resistive switching devices and methods of formation thereof |
US20130277804A1 (en) * | 2012-04-20 | 2013-10-24 | International Business Machines Corporation | Bipolar junction transistors with reduced base-collector junction capacitance |
US8901738B2 (en) | 2012-11-12 | 2014-12-02 | International Business Machines Corporation | Method of manufacturing an enhanced electromigration performance hetero-junction bipolar transistor |
US9590082B1 (en) * | 2015-12-10 | 2017-03-07 | Globalfoundries Inc. | Integration of heterojunction bipolar transistors with different base profiles |
US9761526B2 (en) | 2016-02-03 | 2017-09-12 | Globalfoundries Inc. | Interconnect structure having tungsten contact copper wiring |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313372A (ja) * | 2000-03-31 | 2001-11-09 | Internatl Business Mach Corp <Ibm> | キャパシタ構造およびその製造方法 |
JP2001319928A (ja) * | 2000-05-08 | 2001-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2004533123A (ja) * | 2001-06-14 | 2004-10-28 | マトソン テクノロジー インコーポレーテッド | 銅接続用の障壁エンハンスメント工程 |
JP2007042662A (ja) * | 2003-10-20 | 2007-02-15 | Renesas Technology Corp | 半導体装置 |
JP2009524220A (ja) * | 2006-01-13 | 2009-06-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 低抵抗及び低インダクタンスの裏面貫通ビア及びその製造方法 |
JP2009146958A (ja) * | 2007-12-12 | 2009-07-02 | Panasonic Corp | 半導体装置及びその製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5012318A (en) * | 1988-09-05 | 1991-04-30 | Nec Corporation | Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor |
US5942328A (en) | 1996-02-29 | 1999-08-24 | International Business Machines Corporation | Low dielectric constant amorphous fluorinated carbon and method of preparation |
JPH117189A (ja) | 1997-06-18 | 1999-01-12 | Canon Inc | 現像装置 |
EP0971403A1 (en) * | 1998-07-07 | 2000-01-12 | Interuniversitair Microelektronica Centrum Vzw | Method for forming copper-containing metal studs |
US6259160B1 (en) | 1999-04-21 | 2001-07-10 | Advanced Micro Devices, Inc. | Apparatus and method of encapsulated copper (Cu) Interconnect formation |
US6457234B1 (en) * | 1999-05-14 | 2002-10-01 | International Business Machines Corporation | Process for manufacturing self-aligned corrosion stop for copper C4 and wirebond |
US6191029B1 (en) * | 1999-09-09 | 2001-02-20 | United Silicon Incorporated | Damascene process |
US6482711B1 (en) * | 1999-10-28 | 2002-11-19 | Hrl Laboratories, Llc | InPSb/InAs BJT device and method of making |
US6376353B1 (en) * | 2000-07-03 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects |
US6727593B2 (en) | 2001-03-01 | 2004-04-27 | Kabushiki Kaisha Toshiba | Semiconductor device with improved bonding |
US20030139034A1 (en) * | 2002-01-22 | 2003-07-24 | Yu-Shen Yuang | Dual damascene structure and method of making same |
US7023093B2 (en) | 2002-10-24 | 2006-04-04 | International Business Machines Corporation | Very low effective dielectric constant interconnect Structures and methods for fabricating the same |
US7241696B2 (en) * | 2002-12-11 | 2007-07-10 | International Business Machines Corporation | Method for depositing a metal layer on a semiconductor interconnect structure having a capping layer |
US6893959B2 (en) | 2003-05-05 | 2005-05-17 | Infineon Technologies Ag | Method to form selective cap layers on metal features with narrow spaces |
US7361991B2 (en) * | 2003-09-19 | 2008-04-22 | International Business Machines Corporation | Closed air gap interconnect structure |
US7084479B2 (en) * | 2003-12-08 | 2006-08-01 | International Business Machines Corporation | Line level air gaps |
US7279433B2 (en) * | 2004-09-20 | 2007-10-09 | Freescale Semiconductor, Inc. | Deposition and patterning of boron nitride nanotube ILD |
US7084062B1 (en) * | 2005-01-12 | 2006-08-01 | Advanced Micro Devices, Inc. | Use of Ta-capped metal line to improve formation of memory element films |
US7084060B1 (en) * | 2005-05-04 | 2006-08-01 | International Business Machines Corporation | Forming capping layer over metal wire structure using selective atomic layer deposition |
US7655081B2 (en) * | 2005-05-13 | 2010-02-02 | Siluria Technologies, Inc. | Plating bath and surface treatment compositions for thin film deposition |
US8399989B2 (en) * | 2005-07-29 | 2013-03-19 | Megica Corporation | Metal pad or metal bump over pad exposed by passivation layer |
KR100640662B1 (ko) * | 2005-08-06 | 2006-11-01 | 삼성전자주식회사 | 장벽금속 스페이서를 구비하는 반도체 소자 및 그 제조방법 |
KR101388389B1 (ko) * | 2006-02-10 | 2014-04-22 | 인터몰레큘러 인코퍼레이티드 | 재료, 단위 프로세스 및 프로세스 시퀀스를 조합적으로 변경하는 방법 및 장치 |
US20070249156A1 (en) | 2006-04-20 | 2007-10-25 | Griselda Bonilla | Method for enabling hard mask free integration of ultra low-k materials and structures produced thereby |
US7557270B2 (en) | 2006-04-28 | 2009-07-07 | Monsanto Technology Llc | Soybean variety 4074328 |
US20070287294A1 (en) | 2006-06-08 | 2007-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect structures and methods for fabricating the same |
US20080026541A1 (en) | 2006-07-26 | 2008-01-31 | International Business Machines Corporation | Air-gap interconnect structures with selective cap |
US7705426B2 (en) | 2006-11-10 | 2010-04-27 | International Business Machines Corporation | Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device |
JP4646993B2 (ja) | 2008-02-27 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8084824B2 (en) * | 2008-09-11 | 2011-12-27 | United Microelectronics Corp. | Metal gate transistor and method for fabricating the same |
-
2009
- 2009-08-11 US US12/539,284 patent/US8237191B2/en not_active Expired - Fee Related
-
2010
- 2010-07-23 KR KR1020100071559A patent/KR20110016395A/ko not_active Application Discontinuation
- 2010-08-09 JP JP2010178911A patent/JP5739123B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-03 US US13/438,508 patent/US8633106B2/en active Active
- 2012-06-21 US US13/529,625 patent/US8692288B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001313372A (ja) * | 2000-03-31 | 2001-11-09 | Internatl Business Mach Corp <Ibm> | キャパシタ構造およびその製造方法 |
JP2001319928A (ja) * | 2000-05-08 | 2001-11-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2004533123A (ja) * | 2001-06-14 | 2004-10-28 | マトソン テクノロジー インコーポレーテッド | 銅接続用の障壁エンハンスメント工程 |
JP2007042662A (ja) * | 2003-10-20 | 2007-02-15 | Renesas Technology Corp | 半導体装置 |
JP2009524220A (ja) * | 2006-01-13 | 2009-06-25 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 低抵抗及び低インダクタンスの裏面貫通ビア及びその製造方法 |
JP2009146958A (ja) * | 2007-12-12 | 2009-07-02 | Panasonic Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8237191B2 (en) | 2012-08-07 |
US20110037096A1 (en) | 2011-02-17 |
KR20110016395A (ko) | 2011-02-17 |
US8633106B2 (en) | 2014-01-21 |
JP5739123B2 (ja) | 2015-06-24 |
US20120261719A1 (en) | 2012-10-18 |
US8692288B2 (en) | 2014-04-08 |
US20120190190A1 (en) | 2012-07-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11232983B2 (en) | Copper interconnect structure with manganese barrier layer | |
JP5739123B2 (ja) | 半導体構造体及びこれの製造方法 | |
US9613853B2 (en) | Copper wire and dielectric with air gaps | |
US8497203B2 (en) | Semiconductor structures and methods of manufacture | |
US20190362977A1 (en) | Semiconductor structures having low resistance paths throughout a wafer | |
US20160035668A1 (en) | Automated short lenght wire shape strapping and methods of fabricating the same | |
US20130269974A1 (en) | Semiconductor structures and methods of manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130404 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140625 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20140625 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140626 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150315 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150331 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150423 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5739123 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |