JP5739123B2 - 半導体構造体及びこれの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 68
- 239000010949 copper Substances 0.000 claims description 66
- 229910052802 copper Inorganic materials 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 230000005669 field effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910016347 CuSn Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 238000013461 design Methods 0.000 description 59
- 239000004020 conductor Substances 0.000 description 14
- 238000012938 design process Methods 0.000 description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 13
- 238000012545 processing Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000036962 time dependent Effects 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 241001077531 Cabares Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000547 structure data Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
12:基板
14:コレクタ
16:ベース
18:エミッタ
20:FET
22:誘電体
24a、24b、24c、24d:配線構造体
26、28:配線層
30:フォトレジスト
32:トレンチ
34:金属
36:マスク層
38:金属層
Claims (17)
- 基板上に設けられたヘテロ接合バイポーラ・トランジスタ及び該ヘテロ接合バイポーラ・トランジスタに隣接する電界効果トランジスタを覆って前記基板上に設けられた誘電体層に、前記ヘテロ接合バイポーラ・トランジスタのエミッタ、ベース及びコレクタのそれぞれに接続された第1コンタクト構造体、並びに前記電界効果トランジスタに接続された第2コンタクト構造体を形成するステップと、
前記第1コンタクト構造体のそれぞれに接続する第1銅配線、及び前記第2コンタクト構造体に接続する第2銅配線を前記誘電体層に形成するステップと、
前記誘電体層上に前記第1銅配線及び前記第2銅配線を覆ってフォトレジスト層を形成するステップと、
前記第1銅配線及び前記第2銅配線のうち前記第1銅配線のみを露出する開口部を前記フォトレジスト層に形成するステップと、
前記第1銅配線の上部をエッチングすることにより前記第1銅配線にトレンチを形成するステップと、
前記フォトレジスト層を除去するステップと、
前記第1銅配線の前記トレンチ内にTaN又はTiNの金属キャップ層を形成するステップとを含む、半導体構造体の製造方法。 - 前記第1コンタクト構造体の材料は、銅又はタングステンである、請求項1に記載の製造方法。
- 前記第2コンタクト構造体の材料は、タングステン又はチタンである、請求項1に記載の製造方法。
- 基板上に設けられたヘテロ接合バイポーラ・トランジスタ及び該ヘテロ接合バイポーラ・トランジスタに隣接する電界効果トランジスタを覆って前記基板上に設けられた誘電体層に、前記ヘテロ接合バイポーラ・トランジスタのエミッタ、ベース及びコレクタのそれぞれに接続された第1コンタクト構造体、並びに前記電界効果トランジスタに接続された第2コンタクト構造体を形成するステップと、
前記第1コンタクト構造体のそれぞれに接続する第1銅配線、及び前記第2コンタクト構造体に接続する第2銅配線を前記誘電体層に形成するステップと、
前記誘電体層上に前記第1銅配線及び前記第2銅配線を覆ってマスク層を形成するステップと、
前記第1銅配線及び前記第2銅配線のうち前記第1銅配線のみを露出する開口部を前記マスク層に形成するステップと、
前記第1銅配線上にCoWPの金属キャップ層を形成するステップとを含む、半導体構造体の製造方法。 - 前記マスク層の材料は、SiCNである、請求項4に記載の製造方法。
- 前記第1コンタクト構造体及び前記第2コンタクト構造体の材料は、タングステンである、請求項4に記載の製造方法。
- 基板上に設けられたヘテロ接合バイポーラ・トランジスタ及び該ヘテロ接合バイポーラ・トランジスタに隣接する電界効果トランジスタを覆って前記基板上に設けられた誘電体層に、前記ヘテロ接合バイポーラ・トランジスタのエミッタ、ベース及びコレクタのそれぞれに接続された第1コンタクト構造体、並びに前記電界効果トランジスタに接続された第2コンタクト構造体を形成するステップと、
前記第1コンタクト構造体のそれぞれに接続する第1銅配線、及び前記第2コンタクト構造体に接続する第2銅配線を前記誘電体層に形成するステップと、
前記誘電体層上に前記第1銅配線及び前記第2銅配線を覆ってマスク層を形成するステップと、
前記第1銅配線及び前記第2銅配線のうち前記第1銅配線のみを露出する開口部を前記マスク層に形成するステップと、
前記マスク層、前記誘電体層、第1銅配線上にSn層を堆積するステップと、
前記Sn層をアニールして第1銅配線上にCuSn合金を形成するステップと、
湿式エッチング・プロセスによって未反応のSnを除去するステップとを含む、半導体構造体の製造方法。 - 前記マスク層の材料は、SiCNである、請求項7に記載の製造方法。
- 前記第1コンタクト構造体及び前記第2コンタクトの材料は、タングステンである、請求項7に記載の製造方法。
- 基板上に設けられたヘテロ接合バイポーラ・トランジスタ及び該ヘテロ接合バイポーラ・トランジスタに隣接して前記基板上に設けられた電界効果トランジスタと、
前記ヘテロ接合バイポーラ・トランジスタ及び前記電界効果トランジスタを覆って前記基板上に設けられた誘電体層と、
前記誘電体層に設けられ、前記ヘテロ接合バイポーラ・トランジスタのエミッタ、ベース及びコレクタのそれぞれに接続された第1コンタクト構造体、並びに前記誘電体層に設けられ、前記電界効果トランジスタに接続された第2コンタクト構造体と、
前記誘電体層に設けられ、前記ヘテロ接合バイポーラ・トランジスタの前記エミッタ、ベース及びコレクタのそれぞれに接続された前記第1コンタクト構造体のそれぞれに接続する第1銅配線、並びに前記誘電体層に設けられ、前記電界効果トランジスタに接続された前記第2コンタクト構造体に接続する第2銅配線と、
前記第1銅配線及び前記第2銅配線のうち前記第1銅配線の上面にのみ接して設けられたTaN又はTiNの金属キャップ層とを備える半導体構造体。 - 前記第1コンタクト構造体の材料は、銅又はタングステンである、請求項10に記載の半導体構造体。
- 前記第2コンタクト構造体の材料は、タングステン又はチタンである、請求項10に記載の半導体構造体。
- 基板上に設けられたヘテロ接合バイポーラ・トランジスタ及び該ヘテロ接合バイポーラ・トランジスタに隣接して前記基板上に設けられた電界効果トランジスタと、
前記ヘテロ接合バイポーラ・トランジスタ及び前記電界効果トランジスタを覆って前記基板上に設けられた誘電体層と、
前記誘電体層に設けられ、前記ヘテロ接合バイポーラ・トランジスタのエミッタ、ベース及びコレクタのそれぞれに接続された第1コンタクト構造体、並びに前記誘電体層に設けられ、前記電界効果トランジスタに接続された第2コンタクト構造体と、
前記誘電体層に設けられ、前記ヘテロ接合バイポーラ・トランジスタの前記エミッタ、ベース及びコレクタのそれぞれに接続された前記第1コンタクト構造体のそれぞれに接続する第1銅配線、並びに前記誘電体層に設けられ、前記電界効果トランジスタに接続された前記第2コンタクト構造体に接続する第2銅配線と、
前記第1銅配線及び前記第2銅配線のうち前記第1銅配線の上面にのみ接して設けられたCoWPの金属キャップ層とを備える半導体構造体。 - 前記第1コンタクト構造体及び前記第2コンタクトの材料は、タングステンである、請求項13に記載の半導体構造体。
- 基板上に設けられたヘテロ接合バイポーラ・トランジスタ及び該ヘテロ接合バイポーラ・トランジスタに隣接して前記基板上に設けられた電界効果トランジスタと、
前記ヘテロ接合バイポーラ・トランジスタ及び前記電界効果トランジスタを覆って前記基板上に設けられた誘電体層と、
前記誘電体層に設けられ、前記ヘテロ接合バイポーラ・トランジスタのエミッタ、ベース及びコレクタのそれぞれに接続された第1コンタクト構造体、並びに前記誘電体層に設けられ、前記電界効果トランジスタに接続された第2コンタクト構造体と、
前記誘電体層に設けられ、前記ヘテロ接合バイポーラ・トランジスタの前記エミッタ、ベース及びコレクタのそれぞれに接続された前記第1コンタクト構造体のそれぞれに接続する第1銅配線、並びに前記誘電体層に設けられ、前記電界効果トランジスタに接続された前記第2コンタクト構造体に接続する第2銅配線と、
前記第1銅配線及び前記第2銅配線のうち前記第1銅配線の上面にのみ接して設けられたSnの金属キャップ層とを備える半導体構造体。 - 前記第1コンタクト構造体及び前記第2コンタクトの材料は、タングステンである、請求項15に記載の半導体構造体。
- 前記マスク層の材料は、SiCNである、請求項15に記載の半導体構造体。
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US12/539284 | 2009-08-11 | ||
US12/539,284 US8237191B2 (en) | 2009-08-11 | 2009-08-11 | Heterojunction bipolar transistors and methods of manufacture |
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JP5739123B2 true JP5739123B2 (ja) | 2015-06-24 |
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US8633106B2 (en) | 2014-01-21 |
US20120190190A1 (en) | 2012-07-26 |
US8237191B2 (en) | 2012-08-07 |
JP2011040748A (ja) | 2011-02-24 |
KR20110016395A (ko) | 2011-02-17 |
US20110037096A1 (en) | 2011-02-17 |
US20120261719A1 (en) | 2012-10-18 |
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