JP2011014556A - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

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Publication number
JP2011014556A
JP2011014556A JP2009154522A JP2009154522A JP2011014556A JP 2011014556 A JP2011014556 A JP 2011014556A JP 2009154522 A JP2009154522 A JP 2009154522A JP 2009154522 A JP2009154522 A JP 2009154522A JP 2011014556 A JP2011014556 A JP 2011014556A
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Japan
Prior art keywords
bonding
semiconductor element
metal
particles
silver
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Pending
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JP2009154522A
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Japanese (ja)
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JP2011014556A5 (https=
Inventor
Toshiaki Morita
俊章 守田
Takesuke Yasuda
雄亮 保田
Hidekazu Ide
英一 井出
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2009154522A priority Critical patent/JP2011014556A/ja
Priority to US12/825,783 priority patent/US8592996B2/en
Publication of JP2011014556A publication Critical patent/JP2011014556A/ja
Publication of JP2011014556A5 publication Critical patent/JP2011014556A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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JP2009154522A 2009-06-30 2009-06-30 半導体装置とその製造方法 Pending JP2011014556A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009154522A JP2011014556A (ja) 2009-06-30 2009-06-30 半導体装置とその製造方法
US12/825,783 US8592996B2 (en) 2009-06-30 2010-06-29 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009154522A JP2011014556A (ja) 2009-06-30 2009-06-30 半導体装置とその製造方法

Publications (2)

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JP2011014556A true JP2011014556A (ja) 2011-01-20
JP2011014556A5 JP2011014556A5 (https=) 2012-05-24

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JP2009154522A Pending JP2011014556A (ja) 2009-06-30 2009-06-30 半導体装置とその製造方法

Country Status (2)

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US (1) US8592996B2 (https=)
JP (1) JP2011014556A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012706A (ja) * 2011-05-31 2013-01-17 Mitsubishi Materials Corp パワーモジュール、及び、パワーモジュールの製造方法
KR20150063065A (ko) * 2012-10-09 2015-06-08 미쓰비시 마테리알 가부시키가이샤 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법
CN108780784A (zh) * 2016-02-01 2018-11-09 三菱综合材料株式会社 带Ag基底层的金属部件、带Ag基底层的绝缘电路基板、半导体装置、带散热器的绝缘电路基板及带Ag基底层的金属部件的制造方法
US10875127B2 (en) 2017-09-22 2020-12-29 Nichia Corporation Method for bonding electronic component and method for manufacturing bonded body
JP2022059274A (ja) * 2020-10-01 2022-04-13 国立大学法人大阪大学 接合構造体及びその製造方法

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* Cited by examiner, † Cited by third party
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CN102810524B (zh) * 2011-05-31 2016-12-14 三菱综合材料株式会社 功率模块及功率模块的制造方法
US8569109B2 (en) * 2011-06-30 2013-10-29 Infineon Technologies Ag Method for attaching a metal surface to a carrier, a method for attaching a chip to a chip carrier, a chip-packaging module and a packaging module
JP5505392B2 (ja) 2011-10-04 2014-05-28 株式会社デンソー 複合材料、及びこれを用いた電気接点電極、電気接点皮膜、導電性フィラー、電気接点構造、並びに複合材料の製造方法
US8586480B1 (en) * 2012-07-31 2013-11-19 Ixys Corporation Power MOSFET having selectively silvered pads for clip and bond wire attach
JP6130696B2 (ja) * 2013-03-26 2017-05-17 田中貴金属工業株式会社 半導体装置
JP6245933B2 (ja) * 2013-10-17 2017-12-13 Ｄｏｗａエレクトロニクス株式会社 接合用銀シートおよびその製造方法並びに電子部品接合方法
EP3151270B1 (en) * 2014-05-27 2022-06-01 Denka Company Limited Semiconductor package and method for manufacturing same
US10785877B2 (en) 2014-07-28 2020-09-22 Heraeus Deutschland GmbH & Co. KG Method for producing a silver sintering agent having silver oxide surfaces and use of said agent in methods for joining components by pressure sintering
DE102014115319A1 (de) * 2014-10-21 2016-04-21 Osram Opto Semiconductors Gmbh Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung
US10910340B1 (en) * 2019-10-14 2021-02-02 Heraeus Deutschland GmbH & Co. KG Silver sintering preparation and the use thereof for the connecting of electronic components

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JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
JP2002333468A (ja) * 2001-03-07 2002-11-22 Yamaha Corp 磁気センサとその製法
US20060199360A1 (en) * 2004-08-18 2006-09-07 Alford Terry L Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
JP2007109848A (ja) * 2005-10-13 2007-04-26 Fujifilm Corp 固体撮像装置及びその製造方法並びにその製造装置
JP2008178911A (ja) * 2006-12-28 2008-08-07 Hitachi Ltd 金属粒子を用いた接合方法及び接合材料

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DE10009678C1 (de) * 2000-02-29 2001-07-19 Siemens Ag Wärmeleitende Klebstoffverbindung und Verfahren zum Herstellen einer wärmeleitenden Klebstoffverbindung
US6872659B2 (en) * 2002-08-19 2005-03-29 Micron Technology, Inc. Activation of oxides for electroless plating
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US20040245648A1 (en) 2002-09-18 2004-12-09 Hiroshi Nagasawa Bonding material and bonding method
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP2005011838A (ja) * 2003-06-16 2005-01-13 Toshiba Corp 半導体装置及びその組立方法
CN1737072B (zh) * 2004-08-18 2011-06-08 播磨化成株式会社 导电粘合剂及使用该导电粘合剂制造物件的方法
JP4972306B2 (ja) * 2004-12-21 2012-07-11 オンセミコンダクター・トレーディング・リミテッド 半導体装置及び回路装置
US7309909B2 (en) * 2005-09-21 2007-12-18 Texas Instruments Incorporated Leadframes for improved moisture reliability of semiconductor devices
JP5151150B2 (ja) * 2006-12-28 2013-02-27 株式会社日立製作所 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法
KR100939550B1 (ko) 2007-12-27 2010-01-29 엘지전자 주식회사 연성 필름
US8513534B2 (en) 2008-03-31 2013-08-20 Hitachi, Ltd. Semiconductor device and bonding material
JP2010171271A (ja) * 2009-01-23 2010-08-05 Renesas Technology Corp 半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
JP2002333468A (ja) * 2001-03-07 2002-11-22 Yamaha Corp 磁気センサとその製法
US20060199360A1 (en) * 2004-08-18 2006-09-07 Alford Terry L Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
JP2007109848A (ja) * 2005-10-13 2007-04-26 Fujifilm Corp 固体撮像装置及びその製造方法並びにその製造装置
JP2008178911A (ja) * 2006-12-28 2008-08-07 Hitachi Ltd 金属粒子を用いた接合方法及び接合材料

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012706A (ja) * 2011-05-31 2013-01-17 Mitsubishi Materials Corp パワーモジュール、及び、パワーモジュールの製造方法
KR20150063065A (ko) * 2012-10-09 2015-06-08 미쓰비시 마테리알 가부시키가이샤 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법
CN104704618A (zh) * 2012-10-09 2015-06-10 三菱综合材料株式会社 半导体装置、陶瓷电路基板及半导体装置的制造方法
CN104704618B (zh) * 2012-10-09 2017-08-08 三菱综合材料株式会社 半导体装置、陶瓷电路基板及半导体装置的制造方法
KR102163532B1 (ko) 2012-10-09 2020-10-08 미쓰비시 마테리알 가부시키가이샤 반도체 장치, 세라믹스 회로 기판 및 반도체 장치의 제조 방법
CN108780784A (zh) * 2016-02-01 2018-11-09 三菱综合材料株式会社 带Ag基底层的金属部件、带Ag基底层的绝缘电路基板、半导体装置、带散热器的绝缘电路基板及带Ag基底层的金属部件的制造方法
CN108780784B (zh) * 2016-02-01 2022-05-17 三菱综合材料株式会社 带Ag基底层的金属部件、带Ag基底层的绝缘电路基板、半导体装置、带散热器的绝缘电路基板及带Ag基底层的金属部件的制造方法
US10875127B2 (en) 2017-09-22 2020-12-29 Nichia Corporation Method for bonding electronic component and method for manufacturing bonded body
JP2022059274A (ja) * 2020-10-01 2022-04-13 国立大学法人大阪大学 接合構造体及びその製造方法
JP7492256B2 (ja) 2020-10-01 2024-05-29 国立大学法人大阪大学 接合構造体及びその製造方法

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US8592996B2 (en) 2013-11-26

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