JP2010541195A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010541195A5 JP2010541195A5 JP2010525191A JP2010525191A JP2010541195A5 JP 2010541195 A5 JP2010541195 A5 JP 2010541195A5 JP 2010525191 A JP2010525191 A JP 2010525191A JP 2010525191 A JP2010525191 A JP 2010525191A JP 2010541195 A5 JP2010541195 A5 JP 2010541195A5
- Authority
- JP
- Japan
- Prior art keywords
- pump
- optoelectronic component
- radiation
- region
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims 20
- 230000005693 optoelectronics Effects 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 15
- 230000004888 barrier function Effects 0.000 claims 4
- 239000002800 charge carrier Substances 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000005253 cladding Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007045463.7 | 2007-09-24 | ||
| DE102007045463 | 2007-09-24 | ||
| DE102007058952A DE102007058952A1 (de) | 2007-09-24 | 2007-12-07 | Optoelektronisches Bauelement |
| DE102007058952.4 | 2007-12-07 | ||
| PCT/DE2008/001444 WO2009039814A1 (de) | 2007-09-24 | 2008-08-29 | Optoelektronisches bauelement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010541195A JP2010541195A (ja) | 2010-12-24 |
| JP2010541195A5 true JP2010541195A5 (cg-RX-API-DMAC7.html) | 2011-07-28 |
| JP5646326B2 JP5646326B2 (ja) | 2014-12-24 |
Family
ID=40418257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010525191A Active JP5646326B2 (ja) | 2007-09-24 | 2008-08-29 | オプトエレクトロニクスコンポーネント |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8406265B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2191547B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5646326B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101608542B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN101809832B (cg-RX-API-DMAC7.html) |
| DE (1) | DE102007058952A1 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2009039814A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9678519B1 (en) | 2006-06-06 | 2017-06-13 | Ideal Power, Inc. | Voltage control modes for microgrid applications |
| US9431888B1 (en) | 2006-06-06 | 2016-08-30 | Ideal Power, Inc. | Single-phase to three phase converter AC motor drive |
| US9397580B1 (en) | 2006-06-06 | 2016-07-19 | Ideal Power, Inc. | Dual link power converter |
| US9124095B1 (en) | 2013-02-15 | 2015-09-01 | Ideal Power Inc. | Islanding detection in power converters |
| US9614458B1 (en) | 2013-02-15 | 2017-04-04 | Ideal Power, Inc. | Methods for determining maximum power point tracking in power converters |
| US9407133B1 (en) | 2013-02-15 | 2016-08-02 | Ideal Power, Inc. | Active power conditioner |
| GB2525135B (en) | 2013-02-15 | 2015-11-25 | Ideal Power Inc | Power-packet-switching converter with sequenced connection to link inductor |
| US9647568B1 (en) | 2013-02-15 | 2017-05-09 | Ideal Power, Inc. | Bi-directional multi-port applications |
| US9219406B1 (en) | 2013-02-15 | 2015-12-22 | Ideal Power Inc. | Systems and methods for assessing current in a resonant circuit |
| JP6542775B2 (ja) | 2013-12-11 | 2019-07-10 | アイディール パワー インコーポレイテッド | 双方向デバイス製造のためのシステムおよび方法 |
| CN106170861B (zh) | 2014-01-16 | 2018-12-28 | 理想能量有限公司 | 对表面电荷敏感性降低的结构和方法 |
| DE102017111938B4 (de) | 2017-05-31 | 2022-09-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optisch gepumpte Halbleiterlaserdiode |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03126931A (ja) * | 1989-10-12 | 1991-05-30 | Fuji Photo Film Co Ltd | 光波長変換デバイス |
| US5301204A (en) * | 1992-09-15 | 1994-04-05 | Texas Instruments Incorporated | Porous silicon as a light source for rare earth-doped CaF2 laser |
| US5796771A (en) * | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
| JPH11346021A (ja) * | 1998-04-03 | 1999-12-14 | Hewlett Packard Co <Hp> | 発光装置およびその製造方法 |
| EP1035623A1 (en) * | 1998-12-04 | 2000-09-13 | Interuniversitair Micro-Elektronica Centrum Vzw | A device for emitting electromagnetic radiation and a method of producing such device |
| US8829546B2 (en) * | 1999-11-19 | 2014-09-09 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
| JP4770058B2 (ja) * | 2000-05-17 | 2011-09-07 | 日亜化学工業株式会社 | 発光素子及び装置 |
| DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| DE10026734A1 (de) * | 2000-05-30 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| US6493132B1 (en) * | 2001-02-14 | 2002-12-10 | Agere Systems Guardian Corp. | Monolithic optically pumped high power semiconductor lasers and amplifiers |
| US6879618B2 (en) * | 2001-04-11 | 2005-04-12 | Eastman Kodak Company | Incoherent light-emitting device apparatus for driving vertical laser cavity |
| DE10129616A1 (de) * | 2001-06-20 | 2003-01-09 | Infineon Technologies Ag | Halbleiterlaser, Verfahren zum Herstellen eines Halbleiterlasers und Verfahren zum Betreiben eines Halbleiterlasers |
| US6714574B2 (en) * | 2001-07-31 | 2004-03-30 | Bookham Technology, Plc | Monolithically integrated optically-pumped edge-emitting semiconductor laser |
| JP4047150B2 (ja) | 2002-11-28 | 2008-02-13 | ローム株式会社 | 半導体発光素子 |
| JP4819330B2 (ja) * | 2003-07-31 | 2011-11-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光ポンプビーム放射半導体装置及びその製造方法 |
| DE10345555A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| US6947466B2 (en) * | 2004-01-29 | 2005-09-20 | Coherent, Inc. | Optically pumped edge-emitting semiconductor laser |
| DE102004042146A1 (de) * | 2004-04-30 | 2006-01-26 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleitervorrichtung |
| US7826511B1 (en) * | 2005-03-25 | 2010-11-02 | Hrl Laboratories, Llc | Optically pumped laser with an integrated optical pump |
| DE102005048196B4 (de) * | 2005-07-29 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip |
| KR100809413B1 (ko) * | 2005-12-08 | 2008-03-05 | 한국전자통신연구원 | 광검출기를 구비한 수직 공진 표면방출레이저 및 그제조방법 |
-
2007
- 2007-12-07 DE DE102007058952A patent/DE102007058952A1/de not_active Withdrawn
-
2008
- 2008-08-29 WO PCT/DE2008/001444 patent/WO2009039814A1/de not_active Ceased
- 2008-08-29 CN CN2008801085531A patent/CN101809832B/zh active Active
- 2008-08-29 EP EP08801251.3A patent/EP2191547B1/de active Active
- 2008-08-29 US US12/679,892 patent/US8406265B2/en active Active
- 2008-08-29 KR KR1020107005557A patent/KR101608542B1/ko not_active Expired - Fee Related
- 2008-08-29 JP JP2010525191A patent/JP5646326B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010541195A5 (cg-RX-API-DMAC7.html) | ||
| KR102341222B1 (ko) | 발광 소자 | |
| Sun et al. | highly efficient quantum-dot light-emitting diodes with DNA− CTMA as a combined hole-transporting and electron-blocking layer | |
| KR101397358B1 (ko) | 유기 전계 발광 소자 및 조명 장치 | |
| Rhee et al. | Recent progress in high-luminance quantum dot light-emitting diodes | |
| JPWO2011125090A1 (ja) | 有機発光装置およびこれを用いた光源装置 | |
| US20170179334A1 (en) | Ultrafast light emitting diodes for optical wireless communications | |
| US11127879B2 (en) | Light-emitting diode | |
| JP6089338B2 (ja) | 有機ｅｌ素子及びその製造方法 | |
| US20210242418A1 (en) | Pixel arrangement comprising a perovskite light emitting diode | |
| US8890114B2 (en) | Light-emitting device | |
| KR20180053379A (ko) | 블루 ｏｌｅｄ 조명 애플리케이션을 위한 마이크로 공동을 갖는 색 변환 층 위에 분포 브래그 반사기 | |
| CN106654050A (zh) | 一种有机发光显示面板及装置 | |
| JP5737096B2 (ja) | Ｉｉｉ族窒化物半導体発光素子 | |
| WO2012123997A1 (ja) | 半導体発光素子及びそれを用いた発光装置 | |
| Lee et al. | Enhancement of light extraction efficiency and suppression of roll‐off characteristics of thermally activated delayed fluorescence organic light‐emitting diodes by inserting nanoscale pixel‐defining layer | |
| TW201411914A (zh) | 有機電致發光裝置 | |
| CN103855262A (zh) | 一种适用于大电流驱动的氮化物led外延结构 | |
| US9912123B2 (en) | Semiconductor light emitting device | |
| JP2014103240A (ja) | 半導体発光素子 | |
| WO2011013498A4 (en) | Surface emitting laser with current constriction layer and multiple active region | |
| US9722208B2 (en) | Light-emitting devices using thin film electrode with refractive index optimized capping layer for reduction of plasmonic energy loss | |
| WO2013068965A3 (en) | Lighting apparatus and manufacturing method for manufacturing the lighting apparatus | |
| US20120091434A1 (en) | Vertical light-emitting device | |
| KR101838701B1 (ko) | 고휘도 발광소자 |