JP2010515822A - 堆積用供給装置 - Google Patents
堆積用供給装置 Download PDFInfo
- Publication number
- JP2010515822A JP2010515822A JP2009544852A JP2009544852A JP2010515822A JP 2010515822 A JP2010515822 A JP 2010515822A JP 2009544852 A JP2009544852 A JP 2009544852A JP 2009544852 A JP2009544852 A JP 2009544852A JP 2010515822 A JP2010515822 A JP 2010515822A
- Authority
- JP
- Japan
- Prior art keywords
- elongate
- channels
- gaseous material
- channel
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 title claims description 55
- 239000000463 material Substances 0.000 claims abstract description 196
- 238000000151 deposition Methods 0.000 claims abstract description 69
- 239000012530 fluid Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 238000004891 communication Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 215
- 239000000758 substrate Substances 0.000 claims description 181
- 238000010926 purge Methods 0.000 claims description 46
- 239000000376 reactant Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 34
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 230000000750 progressive effect Effects 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 description 70
- 239000002243 precursor Substances 0.000 description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 34
- 230000033001 locomotion Effects 0.000 description 34
- 239000010408 film Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 238000013459 approach Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000003446 ligand Substances 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 238000000427 thin-film deposition Methods 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000007667 floating Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- BRDWIEOJOWJCLU-LTGWCKQJSA-N GS-441524 Chemical compound C=1C=C2C(N)=NC=NN2C=1[C@]1(C#N)O[C@H](CO)[C@@H](O)[C@H]1O BRDWIEOJOWJCLU-LTGWCKQJSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000012707 chemical precursor Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- -1 zirconate Chemical compound 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007755 gap coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012804 iterative process Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000009763 wire-cut EDM Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/620,738 US20080166880A1 (en) | 2007-01-08 | 2007-01-08 | Delivery device for deposition |
| PCT/US2007/026314 WO2008085468A1 (en) | 2007-01-08 | 2007-12-26 | Delivery device for deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010515822A true JP2010515822A (ja) | 2010-05-13 |
| JP2010515822A5 JP2010515822A5 (enExample) | 2010-12-09 |
Family
ID=39284739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009544852A Pending JP2010515822A (ja) | 2007-01-08 | 2007-12-26 | 堆積用供給装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20080166880A1 (enExample) |
| EP (1) | EP2102382A1 (enExample) |
| JP (1) | JP2010515822A (enExample) |
| TW (1) | TW200902750A (enExample) |
| WO (1) | WO2008085468A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014159636A (ja) * | 2009-06-08 | 2014-09-04 | Veeco Ald Inc | 蒸着反応器及び薄膜形成方法 |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US7572686B2 (en) * | 2007-09-26 | 2009-08-11 | Eastman Kodak Company | System for thin film deposition utilizing compensating forces |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US8211231B2 (en) * | 2007-09-26 | 2012-07-03 | Eastman Kodak Company | Delivery device for deposition |
| US8182608B2 (en) * | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
| US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
| JP5179389B2 (ja) * | 2008-03-19 | 2013-04-10 | 東京エレクトロン株式会社 | シャワーヘッド及び基板処理装置 |
| EP2159304A1 (en) * | 2008-08-27 | 2010-03-03 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Apparatus and method for atomic layer deposition |
| CN102308368B (zh) | 2008-12-04 | 2014-02-12 | 威科仪器有限公司 | 用于化学气相沉积的进气口元件及其制造方法 |
| US8293013B2 (en) * | 2008-12-30 | 2012-10-23 | Intermolecular, Inc. | Dual path gas distribution device |
| FR2956869B1 (fr) * | 2010-03-01 | 2014-05-16 | Alex Hr Roustaei | Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches |
| US8657959B2 (en) * | 2009-07-31 | 2014-02-25 | E I Du Pont De Nemours And Company | Apparatus for atomic layer deposition on a moving substrate |
| US20110023775A1 (en) * | 2009-07-31 | 2011-02-03 | E.I. Du Pont De Nemours And Company | Apparatus for atomic layer deposition |
| US20110097488A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including mirrored finish plate |
| US20110097491A1 (en) * | 2009-10-27 | 2011-04-28 | Levy David H | Conveyance system including opposed fluid distribution manifolds |
| US20110097487A1 (en) | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including bonded plates |
| US20110097490A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including compliant plates |
| US20110097493A1 (en) | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold including non-parallel non-perpendicular slots |
| US20110097489A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Distribution manifold including multiple fluid communication ports |
| US20110097492A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid distribution manifold operating state management system |
| US20110097494A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Fluid conveyance system including flexible retaining mechanism |
| WO2011062779A1 (en) | 2009-11-20 | 2011-05-26 | Eastman Kodak Company | Method for selective deposition and devices |
| US7998878B2 (en) * | 2009-11-20 | 2011-08-16 | Eastman Kodak Company | Method for selective deposition and devices |
| JP5052638B2 (ja) * | 2010-03-17 | 2012-10-17 | Ｓｐｐテクノロジーズ株式会社 | 成膜方法 |
| US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| US8486192B2 (en) | 2010-09-30 | 2013-07-16 | Soitec | Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods |
| US8133806B1 (en) | 2010-09-30 | 2012-03-13 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for forming semiconductor materials by atomic layer deposition |
| US20120222620A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use |
| US20120225191A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
| US9051637B2 (en) * | 2011-11-10 | 2015-06-09 | Veeco Ald Inc. | Securing of shadow mask and substrate on susceptor of deposition apparatus |
| US8618003B2 (en) | 2011-12-05 | 2013-12-31 | Eastman Kodak Company | Method of making electronic devices using selective deposition |
| US9748125B2 (en) | 2012-01-31 | 2017-08-29 | Applied Materials, Inc. | Continuous substrate processing system |
| KR101435100B1 (ko) * | 2012-06-20 | 2014-08-29 | 주식회사 엠티에스나노테크 | 원자층 증착 장치 |
| US8653516B1 (en) | 2012-08-31 | 2014-02-18 | Eastman Kodak Company | High performance thin film transistor |
| US8846545B2 (en) | 2012-08-31 | 2014-09-30 | Eastman Kodak Company | Method of forming patterned thin film dielectric stack |
| US8791023B2 (en) | 2012-08-31 | 2014-07-29 | Eastman Kodak Company | Patterned thin film dielectric layer formation |
| US8927434B2 (en) | 2012-08-31 | 2015-01-06 | Eastman Kodak Company | Patterned thin film dielectric stack formation |
| US9175389B2 (en) * | 2012-12-21 | 2015-11-03 | Intermolecular, Inc. | ALD process window combinatorial screening tool |
| TWI624560B (zh) * | 2013-02-18 | 2018-05-21 | 應用材料股份有限公司 | 用於原子層沉積的氣體分配板及原子層沉積系統 |
| JP6333941B2 (ja) | 2013-03-11 | 2018-05-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高温処理チャンバリッド及びそれを備えた処理チャンバ |
| US8937016B2 (en) | 2013-06-21 | 2015-01-20 | Eastman Kodak Company | Substrate preparation for selective area deposition |
| US8921236B1 (en) | 2013-06-21 | 2014-12-30 | Eastman Kodak Company | Patterning for selective area deposition |
| US9957612B2 (en) | 2014-01-17 | 2018-05-01 | Ceres Technologies, Inc. | Delivery device, methods of manufacture thereof and articles comprising the same |
| US9202898B2 (en) | 2014-03-06 | 2015-12-01 | Eastman Kodak Company | Fabricating VTFT with polymer core |
| US9178029B2 (en) | 2014-03-06 | 2015-11-03 | Eastman Kodak Company | Forming a VTFT gate using printing |
| US9214560B2 (en) | 2014-03-06 | 2015-12-15 | Eastman Kodak Company | VTFT including overlapping electrodes |
| US9236486B2 (en) | 2014-03-06 | 2016-01-12 | Eastman Kodak Company | Offset independently operable VTFT electrodes |
| US9129993B1 (en) | 2014-03-06 | 2015-09-08 | Eastman Kodak Company | Forming a VTFT using printing |
| US9198283B2 (en) | 2014-03-06 | 2015-11-24 | Eastman Kodak Company | Vertically spaced electrode structure |
| WO2015134082A1 (en) | 2014-03-06 | 2015-09-11 | Eastman Kodak Company | Vtft with polymer core |
| US9153698B2 (en) | 2014-03-06 | 2015-10-06 | Eastman Kodak Company | VTFT with gate aligned to vertical structure |
| US9153445B2 (en) | 2014-03-06 | 2015-10-06 | Eastman Kodak Company | Forming a VTFT with aligned gate |
| US9142647B1 (en) | 2014-03-06 | 2015-09-22 | Eastman Kodak Company | VTFT formation using selective area deposition |
| US9093470B1 (en) | 2014-03-06 | 2015-07-28 | Eastman Kodak Company | VTFT formation using capillary action |
| US9117914B1 (en) | 2014-03-06 | 2015-08-25 | Eastman Kodak Company | VTFT with polymer core |
| US9123815B1 (en) | 2014-03-06 | 2015-09-01 | Eastman Kodak Company | VTFTs including offset electrodes |
| US9147770B1 (en) | 2014-03-06 | 2015-09-29 | Eastman Kodak Company | VTFT with extended electrode |
| US9331205B2 (en) | 2014-03-06 | 2016-05-03 | Eastman Kodak Company | VTFT with post, cap, and aligned gate |
| CN108291303B (zh) * | 2015-12-17 | 2020-07-21 | 倍耐克有限公司 | 涂覆前体喷嘴和喷嘴头 |
| US10400332B2 (en) * | 2017-03-14 | 2019-09-03 | Eastman Kodak Company | Deposition system with interlocking deposition heads |
| KR102462797B1 (ko) * | 2018-06-18 | 2022-11-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 펌프-퍼지 및 전구체 전달을 위한 가스 분배 조립체 |
| US11306396B2 (en) * | 2018-11-30 | 2022-04-19 | Meidensha Corporation | Oxide film forming device |
| NL2027074B1 (en) * | 2020-12-08 | 2022-07-07 | Kalpana Tech B V | Roll-to-roll processing |
| CN119069333B (zh) * | 2024-11-06 | 2025-03-07 | 上海钧乾智造科技有限公司 | 一种电池片先驱体供给装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4413022A (en) * | 1979-02-28 | 1983-11-01 | Canon Kabushiki Kaisha | Method for performing growth of compound thin films |
| US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
| JPS62142783A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | プラズマｃｖｄ法による堆積膜形成装置 |
| JPS64269A (en) * | 1987-01-27 | 1989-01-05 | Asahi Glass Co Ltd | Gas inlet nozzle for atmospheric cvd |
| JP2001323377A (ja) * | 2000-03-16 | 2001-11-22 | Applied Materials Inc | 半導体ウェーハ処理システムのシャワーヘッドのための上下続きの２つのガスのフェースプレート |
| JP2002518839A (ja) * | 1998-06-16 | 2002-06-25 | アプライド マテリアルズ インコーポレイテッド | デュアルチャネル・ガス分配プレート |
| US20040067641A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| JP2004124240A (ja) * | 2002-10-07 | 2004-04-22 | Sekisui Chem Co Ltd | 表面処理装置 |
| US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4801352A (en) * | 1986-12-30 | 1989-01-31 | Image Micro Systems, Inc. | Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation |
| DE4011933C2 (de) * | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
| CA2016970A1 (en) * | 1990-05-16 | 1991-11-16 | Prasad N. Gadgil | Inverted diffusion stagnation point flow reactor for vapor deposition of thin films |
| US5136975A (en) * | 1990-06-21 | 1992-08-11 | Watkins-Johnson Company | Injector and method for delivering gaseous chemicals to a surface |
| EP0518524B1 (en) * | 1991-05-30 | 1996-09-04 | Hitachi, Ltd. | Valve and semiconductor fabricating equipment using the same |
| US5589002A (en) * | 1994-03-24 | 1996-12-31 | Applied Materials, Inc. | Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing |
| US6022414A (en) * | 1994-07-18 | 2000-02-08 | Semiconductor Equipment Group, Llc | Single body injector and method for delivering gases to a surface |
| US6200389B1 (en) * | 1994-07-18 | 2001-03-13 | Silicon Valley Group Thermal Systems Llc | Single body injector and deposition chamber |
| JP3360098B2 (ja) * | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
| JPH0945624A (ja) * | 1995-07-27 | 1997-02-14 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
| US6005226A (en) * | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
| US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US6289842B1 (en) * | 1998-06-22 | 2001-09-18 | Structured Materials Industries Inc. | Plasma enhanced chemical vapor deposition system |
| US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
| US6415736B1 (en) * | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
| US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
| US6503330B1 (en) * | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| KR100516844B1 (ko) * | 2001-01-22 | 2005-09-26 | 동경 엘렉트론 주식회사 | 처리 장치 및 처리 방법 |
| SG104976A1 (en) * | 2001-07-13 | 2004-07-30 | Asml Us Inc | Modular injector and exhaust assembly |
| WO2003063222A1 (en) * | 2002-01-24 | 2003-07-31 | Sumitomo Precision Products Co., Ltd. | Ozone-processing device |
| US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| US6899765B2 (en) * | 2002-03-29 | 2005-05-31 | Applied Materials Israel, Ltd. | Chamber elements defining a movable internal chamber |
| JP3946655B2 (ja) * | 2003-03-26 | 2007-07-18 | 株式会社日立ハイテクノロジーズ | 試料載置用可動ステージ、回路パターンの製造装置、及び回路パターンの検査装置 |
| US7601223B2 (en) * | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
| US20050103265A1 (en) * | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
| JP2005216132A (ja) * | 2004-01-30 | 2005-08-11 | Sumitomo Eaton Noba Kk | 移動装置の制御方法、及び移動装置の連動装置、及び移動装置の連動方法、及び半導体製造装置、及び液晶製造装置、及びメカニカルスキャンイオン注入装置 |
| US7456429B2 (en) * | 2006-03-29 | 2008-11-25 | Eastman Kodak Company | Apparatus for atomic layer deposition |
| US7413982B2 (en) * | 2006-03-29 | 2008-08-19 | Eastman Kodak Company | Process for atomic layer deposition |
| US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US7789961B2 (en) * | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
| US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| US7572686B2 (en) * | 2007-09-26 | 2009-08-11 | Eastman Kodak Company | System for thin film deposition utilizing compensating forces |
| US7858144B2 (en) * | 2007-09-26 | 2010-12-28 | Eastman Kodak Company | Process for depositing organic materials |
| US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
| US20090081356A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Process for forming thin film encapsulation layers |
| US8017183B2 (en) * | 2007-09-26 | 2011-09-13 | Eastman Kodak Company | Organosiloxane materials for selective area deposition of inorganic materials |
| US7972898B2 (en) * | 2007-09-26 | 2011-07-05 | Eastman Kodak Company | Process for making doped zinc oxide |
| US8182608B2 (en) * | 2007-09-26 | 2012-05-22 | Eastman Kodak Company | Deposition system for thin film formation |
| US20090079328A1 (en) * | 2007-09-26 | 2009-03-26 | Fedorovskaya Elena A | Thin film encapsulation containing zinc oxide |
| US8211231B2 (en) * | 2007-09-26 | 2012-07-03 | Eastman Kodak Company | Delivery device for deposition |
| US8030212B2 (en) * | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
| US20090095222A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas spiral channel showerhead |
| US7846644B2 (en) * | 2007-11-20 | 2010-12-07 | Eastman Kodak Company | Photopatternable deposition inhibitor containing siloxane |
-
2007
- 2007-01-08 US US11/620,738 patent/US20080166880A1/en not_active Abandoned
- 2007-12-26 WO PCT/US2007/026314 patent/WO2008085468A1/en not_active Ceased
- 2007-12-26 JP JP2009544852A patent/JP2010515822A/ja active Pending
- 2007-12-26 EP EP07868027A patent/EP2102382A1/en not_active Withdrawn
-
2008
- 2008-01-07 TW TW097100606A patent/TW200902750A/zh unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4413022A (en) * | 1979-02-28 | 1983-11-01 | Canon Kabushiki Kaisha | Method for performing growth of compound thin films |
| US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
| JPS62142783A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | プラズマｃｖｄ法による堆積膜形成装置 |
| JPS64269A (en) * | 1987-01-27 | 1989-01-05 | Asahi Glass Co Ltd | Gas inlet nozzle for atmospheric cvd |
| JP2002518839A (ja) * | 1998-06-16 | 2002-06-25 | アプライド マテリアルズ インコーポレイテッド | デュアルチャネル・ガス分配プレート |
| JP2001323377A (ja) * | 2000-03-16 | 2001-11-22 | Applied Materials Inc | 半導体ウェーハ処理システムのシャワーヘッドのための上下続きの２つのガスのフェースプレート |
| US20040067641A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| JP2004124240A (ja) * | 2002-10-07 | 2004-04-22 | Sekisui Chem Co Ltd | 表面処理装置 |
| US20040142558A1 (en) * | 2002-12-05 | 2004-07-22 | Granneman Ernst H. A. | Apparatus and method for atomic layer deposition on substrates |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014159636A (ja) * | 2009-06-08 | 2014-09-04 | Veeco Ald Inc | 蒸着反応器及び薄膜形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2102382A1 (en) | 2009-09-23 |
| US20080166880A1 (en) | 2008-07-10 |
| WO2008085468A1 (en) | 2008-07-17 |
| TW200902750A (en) | 2009-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010515822A (ja) | 堆積用供給装置 | |
| US10351954B2 (en) | Deposition system and method using a delivery head separated from a substrate by gas pressure | |
| JP5466019B2 (ja) | 薄膜堆積のための供給装置 | |
| US8420168B2 (en) | Delivery device for deposition | |
| US8182608B2 (en) | Deposition system for thin film formation | |
| US8398770B2 (en) | Deposition system for thin film formation | |
| JP2010541237A (ja) | 原子層堆積による薄膜トランジスタの製造方法 | |
| US20140206137A1 (en) | Deposition system for thin film formation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101019 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101019 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121015 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121023 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130319 |