JP2010514586A - 熱転写されたパターンの解像度を向上させる方法 - Google Patents

熱転写されたパターンの解像度を向上させる方法 Download PDF

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Publication number
JP2010514586A
JP2010514586A JP2009520787A JP2009520787A JP2010514586A JP 2010514586 A JP2010514586 A JP 2010514586A JP 2009520787 A JP2009520787 A JP 2009520787A JP 2009520787 A JP2009520787 A JP 2009520787A JP 2010514586 A JP2010514586 A JP 2010514586A
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Japan
Prior art keywords
styrene
layer
group
dielectric
polymers
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Ceased
Application number
JP2009520787A
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English (en)
Japanese (ja)
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JP2010514586A5 (enExample
Inventor
ジェラルド・ディー・アンドルーズ
リチャード・ケヴィン・ベイリー
グラシエラ・ベアトリス・ブランチェット
ジョン・ダブリュー・カトロン
フェン・ガオ
ゲアリー・デルマー・ジェイコックス
リンダ・ケイ・ジョンソン
ルーパン・レオン・クゥセイヤン
ジェフリー・スコット・メス
フランク・エス・プリーンシペ
リナルド・エス・シフィーノ
ロバート・マー・ヨハーナン
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2010514586A publication Critical patent/JP2010514586A/ja
Publication of JP2010514586A5 publication Critical patent/JP2010514586A5/ja
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/382—Contact thermal transfer or sublimation processes
    • B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/382—Contact thermal transfer or sublimation processes
    • B41M5/38207—Contact thermal transfer or sublimation processes characterised by aspects not provided for in groups B41M5/385 - B41M5/395
    • B41M5/38214—Structural details, e.g. multilayer systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/0753—Insulation
    • H05K2201/0761—Insulation resistance, e.g. of the surface of the PCB between the conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0191—Using tape or non-metallic foil in a process, e.g. during filling of a hole with conductive paste
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Decoration By Transfer Pictures (AREA)
JP2009520787A 2006-07-17 2007-07-16 熱転写されたパターンの解像度を向上させる方法 Ceased JP2010514586A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48825806A 2006-07-17 2006-07-17
US11/789,842 US7744717B2 (en) 2006-07-17 2007-04-25 Process for enhancing the resolution of a thermally transferred pattern
PCT/US2007/016117 WO2008010981A2 (en) 2006-07-17 2007-07-16 A process for enhancing the resolution of a thermally transferred pattern

Publications (2)

Publication Number Publication Date
JP2010514586A true JP2010514586A (ja) 2010-05-06
JP2010514586A5 JP2010514586A5 (enExample) 2010-09-02

Family

ID=38829207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009520787A Ceased JP2010514586A (ja) 2006-07-17 2007-07-16 熱転写されたパターンの解像度を向上させる方法

Country Status (4)

Country Link
US (1) US7744717B2 (enExample)
EP (1) EP2041626B1 (enExample)
JP (1) JP2010514586A (enExample)
WO (1) WO2008010981A2 (enExample)

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JP2008235880A (ja) * 2007-02-21 2008-10-02 Brother Ind Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
US8182633B2 (en) * 2008-04-29 2012-05-22 Samsung Electronics Co., Ltd. Method of fabricating a flexible display device
JP4992975B2 (ja) * 2008-06-16 2012-08-08 東レ株式会社 パターニング方法およびこれを用いたデバイスの製造方法ならびにデバイス
GB2462591B (en) * 2008-08-05 2013-04-03 Cambridge Display Tech Ltd Organic thin film transistors and methods of making the same
KR101078079B1 (ko) * 2008-12-10 2011-10-28 엘에스전선 주식회사 은 수식 탄소 나노튜브 함유 전도성 페이스트 조성물
GB0906105D0 (en) * 2009-04-08 2009-05-20 Ulive Entpr Ltd Mixed metal oxides
US20100301022A1 (en) * 2009-06-01 2010-12-02 Gentex Corporation Method of laser-welding using thermal transfer deposition of a laser-absorbing dye
US8629015B2 (en) * 2009-07-03 2014-01-14 Smartrac Ip B.V. Manufacturing of electronic components
DE102009037691A1 (de) * 2009-08-17 2011-03-03 Siemens Aktiengesellschaft Dielektrische Schutzschicht für eine selbstorganisierende Monolage (SAM)
CN102337101B (zh) * 2010-07-16 2014-06-11 财团法人工业技术研究院 用于电磁屏蔽的组合物、利用其的装置及结构制备方法
US20110291032A1 (en) * 2010-05-27 2011-12-01 Industrial Technology Research Institute Electromagnetic shielding composition, electromagnetic shielding device, anti-electrostatic device and method of manufacturing electromagnetic shielding structure
US9384877B2 (en) * 2010-05-27 2016-07-05 University Of South Florida Magneto dielectric polymer nanocomposites and method of making
US9666342B2 (en) 2010-05-27 2017-05-30 University Of South Florida Magneto-dielectric polymer nanocomposites
CN102448264A (zh) * 2010-10-14 2012-05-09 鸿富锦精密工业（深圳）有限公司 光致发光薄膜、壳体及壳体的制作方法
KR101114916B1 (ko) * 2010-12-27 2012-02-14 주식회사 엘지화학 유기발광소자용 기판 및 그 제조방법
US9169128B2 (en) 2011-02-22 2015-10-27 Purdue Research Foundation Synthesis of metal oxide-based thermoelectric materials for high temperature applications
US10468152B2 (en) 2013-02-21 2019-11-05 Global Graphene Group, Inc. Highly conducting and transparent film and process for producing same
US9530531B2 (en) 2013-02-21 2016-12-27 Nanotek Instruments, Inc. Process for producing highly conducting and transparent films from graphene oxide-metal nanowire hybrid materials
CN104076550A (zh) * 2014-06-17 2014-10-01 京东方科技集团股份有限公司 彩膜阵列基板、显示装置及彩膜阵列基板的制作方法
US10414154B2 (en) * 2016-03-18 2019-09-17 Hewlett-Packard Development Company, L.P. Transferring images
KR101969343B1 (ko) * 2016-08-19 2019-04-16 동우 화인켐 주식회사 필름 터치 센서 및 필름 터치 센서용 구조체
DE102016121594A1 (de) * 2016-11-10 2018-05-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur verbesserung der oberflächenqualität generativ hergestellter bauteile
CN114335941B (zh) * 2021-12-27 2022-10-14 电子科技大学 一种柔性可拉伸带通滤波器

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JPH10272849A (ja) * 1997-03-31 1998-10-13 Toppan Printing Co Ltd 画像形成方法及び装置並びに離型性インクリボン
WO2005004205A2 (en) * 2003-06-26 2005-01-13 E.I. Dupont De Nemours And Company Methods for forming patterns of a filled dielectric material on substrates
JP2006041500A (ja) * 2004-06-23 2006-02-09 Sony Corp 素子の転写方法、素子の間引き方法及び素子の転写装置
JP2006524916A (ja) * 2003-03-27 2006-11-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 感熱性材料を基材に転写するための方法およびドナー要素

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JP2006524916A (ja) * 2003-03-27 2006-11-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 感熱性材料を基材に転写するための方法およびドナー要素
WO2005004205A2 (en) * 2003-06-26 2005-01-13 E.I. Dupont De Nemours And Company Methods for forming patterns of a filled dielectric material on substrates
JP2006041500A (ja) * 2004-06-23 2006-02-09 Sony Corp 素子の転写方法、素子の間引き方法及び素子の転写装置

Also Published As

Publication number Publication date
EP2041626B1 (en) 2013-04-10
US20080012163A1 (en) 2008-01-17
WO2008010981A3 (en) 2008-05-15
EP2041626A2 (en) 2009-04-01
WO2008010981A2 (en) 2008-01-24
US7744717B2 (en) 2010-06-29

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