JP2010514222A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010514222A5 JP2010514222A5 JP2009543056A JP2009543056A JP2010514222A5 JP 2010514222 A5 JP2010514222 A5 JP 2010514222A5 JP 2009543056 A JP2009543056 A JP 2009543056A JP 2009543056 A JP2009543056 A JP 2009543056A JP 2010514222 A5 JP2010514222 A5 JP 2010514222A5
- Authority
- JP
- Japan
- Prior art keywords
- working liquid
- proline
- fluorochemical surfactant
- wafer
- optionally
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 claims description 29
- 239000004094 surface-active agent Substances 0.000 claims description 17
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 7
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/613,646 | 2006-12-20 | ||
| US11/613,646 US8591764B2 (en) | 2006-12-20 | 2006-12-20 | Chemical mechanical planarization composition, system, and method of use |
| PCT/US2007/086955 WO2008079651A1 (en) | 2006-12-20 | 2007-12-10 | Chemical mechanical planarization composition, system, and method of use |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010514222A JP2010514222A (ja) | 2010-04-30 |
| JP2010514222A5 true JP2010514222A5 (cg-RX-API-DMAC7.html) | 2011-02-10 |
| JP5363338B2 JP5363338B2 (ja) | 2013-12-11 |
Family
ID=39543526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009543056A Expired - Fee Related JP5363338B2 (ja) | 2006-12-20 | 2007-12-10 | 化学機械平坦化組成物、システム、及びその使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8591764B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2109648B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5363338B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101432852B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN101568613B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI437084B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2008079651A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
| US20080261402A1 (en) * | 2007-04-17 | 2008-10-23 | United Microelectronics Corp. | Method of removing insulating layer on substrate |
| US20090023362A1 (en) * | 2007-07-17 | 2009-01-22 | Tzu-Shin Chen | Retaining ring for chemical mechanical polishing, its operational method and application system |
| DE102009025243B4 (de) | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
| CN103718064B (zh) * | 2011-07-22 | 2015-12-09 | 萨特隆股份公司 | 包含一个具有改善的耐久性的基于表面活性剂的临时性防雾涂层的光学物品 |
| KR20150058302A (ko) * | 2012-09-21 | 2015-05-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 개선된 cmp 성능을 위한 고정 연마 웹으로의 첨가제의 혼입 |
| TWI530557B (zh) * | 2014-05-29 | 2016-04-21 | 卡博特微電子公司 | 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的ｃｍｐ組合物 |
| CN110382717B (zh) | 2016-12-22 | 2023-11-21 | 伊鲁米那股份有限公司 | 流动池套件及其制造方法 |
| CN108250975A (zh) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液及其应用 |
| TW202035361A (zh) * | 2018-12-12 | 2020-10-01 | 美商3M新設資產公司 | 氟化胺氧化物界面活性劑 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5114437A (en) | 1990-08-28 | 1992-05-19 | Sumitomo Chemical Co., Ltd. | Polishing composition for metallic material |
| US5152917B1 (en) | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
| JPH05112775A (ja) | 1991-10-22 | 1993-05-07 | Sumitomo Chem Co Ltd | 金属材料の研磨用組成物 |
| US5690539A (en) * | 1995-08-07 | 1997-11-25 | Cal-West Equipment Company Inc. | Method of abarding using surface abrasion compositions |
| US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6194317B1 (en) | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
| US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| US6121143A (en) | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
| JP3337464B2 (ja) | 1998-08-31 | 2002-10-21 | 日立化成工業株式会社 | 金属用研磨液及び研磨方法 |
| US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
| US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| JP3869608B2 (ja) | 2000-01-25 | 2007-01-17 | Ｎｅｃエレクトロニクス株式会社 | 防食剤 |
| KR20020086949A (ko) * | 2000-04-11 | 2002-11-20 | 캐보트 마이크로일렉트로닉스 코포레이션 | 실리콘 옥사이드의 선택적 제거를 위한 시스템 |
| US6733553B2 (en) | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
| US6964923B1 (en) | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
| JP2002057130A (ja) * | 2000-08-14 | 2002-02-22 | Three M Innovative Properties Co | Ｃｍｐ用研磨パッド |
| US20020092423A1 (en) * | 2000-09-05 | 2002-07-18 | Gillingham Gary R. | Methods for filtering air for a gas turbine system |
| US6477926B1 (en) * | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
| US6702954B1 (en) | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
| KR100464429B1 (ko) | 2002-08-16 | 2005-01-03 | 삼성전자주식회사 | 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법 |
| JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| US6841480B2 (en) | 2002-02-04 | 2005-01-11 | Infineon Technologies Ag | Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate |
| US20030176151A1 (en) | 2002-02-12 | 2003-09-18 | Applied Materials, Inc. | STI polish enhancement using fixed abrasives with amino acid additives |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2004241675A (ja) * | 2003-02-07 | 2004-08-26 | Renesas Technology Corp | 配線接続構造を有する電子デバイスの製造方法 |
| US7160178B2 (en) | 2003-08-07 | 2007-01-09 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
| US20050028450A1 (en) | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| US7427361B2 (en) | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
| US7214623B2 (en) | 2003-10-13 | 2007-05-08 | International Business Machines Corporation | Planarization system and method using a carbonate containing fluid |
| US7314578B2 (en) | 2003-12-12 | 2008-01-01 | Samsung Electronics Co., Ltd. | Slurry compositions and CMP methods using the same |
| JP2005244123A (ja) | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| US20060000808A1 (en) | 2004-07-01 | 2006-01-05 | Fuji Photo Film Co., Ltd. | Polishing solution of metal and chemical mechanical polishing method |
| JP2006100538A (ja) | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| JP2006179845A (ja) | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US6997785B1 (en) | 2004-12-23 | 2006-02-14 | 3M Innovative Properties Company | Wafer planarization composition and method of use |
| JP2006295152A (ja) * | 2005-03-17 | 2006-10-26 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US7368388B2 (en) * | 2005-04-15 | 2008-05-06 | Small Robert J | Cerium oxide abrasives for chemical mechanical polishing |
-
2006
- 2006-12-20 US US11/613,646 patent/US8591764B2/en not_active Expired - Fee Related
-
2007
- 2007-12-10 JP JP2009543056A patent/JP5363338B2/ja not_active Expired - Fee Related
- 2007-12-10 KR KR1020097012681A patent/KR101432852B1/ko not_active Expired - Fee Related
- 2007-12-10 EP EP07869084A patent/EP2109648B1/en not_active Not-in-force
- 2007-12-10 CN CN2007800477343A patent/CN101568613B/zh not_active Expired - Fee Related
- 2007-12-10 WO PCT/US2007/086955 patent/WO2008079651A1/en not_active Ceased
- 2007-12-19 TW TW096148796A patent/TWI437084B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010514222A5 (cg-RX-API-DMAC7.html) | ||
| KR102587746B1 (ko) | 개선된 토포그래피를 갖는 텅스텐 벌크 연마 방법 | |
| JP7370984B2 (ja) | 改善されたトポグラフィーを有するタングステンバフ研磨組成物 | |
| JP6280254B2 (ja) | 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法 | |
| KR102680119B1 (ko) | 양이온성 계면활성제 및 시클로덱스트린을 갖는 텅스텐-가공 슬러리 | |
| US9556363B2 (en) | Copper barrier chemical-mechanical polishing composition | |
| EP3400267B1 (en) | Tungsten processing slurry with catalyst | |
| JP6530401B2 (ja) | 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 | |
| America et al. | Slurry additive effects on the suppression of silicon nitride removal during CMP | |
| JP6246263B2 (ja) | 酸化ケイ素および窒化ケイ素の少なくとも１種とポリシリコンとを含む基体を研磨する方法 | |
| TW201600590A (zh) | 混合的研磨性鎢之化學機械拋光（ｃｍｐ）組合物 | |
| TW200918658A (en) | Polishing composition and method utilizing abrasive particles treated with an aminosilane | |
| JP2009540575A5 (cg-RX-API-DMAC7.html) | ||
| KR101432852B1 (ko) | 화학 기계적 평탄화 조성물, 시스템, 및 사용 방법 | |
| JP2012235111A5 (cg-RX-API-DMAC7.html) | ||
| JP2010501121A5 (cg-RX-API-DMAC7.html) | ||
| TWI496878B (zh) | 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 | |
| JP5357021B2 (ja) | 酸化物の除去速度向上のためのガリウム及びクロムイオン | |
| KR101279970B1 (ko) | 금속 배선 연마용 ｃｍｐ 슬러리 조성물 |