JP2010267960A - 基板をケミカルメカニカルポリッシングする方法 - Google Patents

基板をケミカルメカニカルポリッシングする方法 Download PDF

Info

Publication number
JP2010267960A
JP2010267960A JP2010101763A JP2010101763A JP2010267960A JP 2010267960 A JP2010267960 A JP 2010267960A JP 2010101763 A JP2010101763 A JP 2010101763A JP 2010101763 A JP2010101763 A JP 2010101763A JP 2010267960 A JP2010267960 A JP 2010267960A
Authority
JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
silicon dioxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010101763A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010267960A5 (OSRAM
Inventor
Zhendong Liu
チェントン・リウ
Yi Guo
イ・グォ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2010267960A publication Critical patent/JP2010267960A/ja
Publication of JP2010267960A5 publication Critical patent/JP2010267960A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2010101763A 2009-04-29 2010-04-27 基板をケミカルメカニカルポリッシングする方法 Pending JP2010267960A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/432,021 US8119529B2 (en) 2009-04-29 2009-04-29 Method for chemical mechanical polishing a substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015098130A Division JP6128161B2 (ja) 2009-04-29 2015-05-13 基板をケミカルメカニカルポリッシングする方法

Publications (2)

Publication Number Publication Date
JP2010267960A true JP2010267960A (ja) 2010-11-25
JP2010267960A5 JP2010267960A5 (OSRAM) 2013-05-09

Family

ID=42813883

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010101763A Pending JP2010267960A (ja) 2009-04-29 2010-04-27 基板をケミカルメカニカルポリッシングする方法
JP2015098130A Active JP6128161B2 (ja) 2009-04-29 2015-05-13 基板をケミカルメカニカルポリッシングする方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015098130A Active JP6128161B2 (ja) 2009-04-29 2015-05-13 基板をケミカルメカニカルポリッシングする方法

Country Status (7)

Country Link
US (1) US8119529B2 (OSRAM)
JP (2) JP2010267960A (OSRAM)
KR (1) KR101698008B1 (OSRAM)
CN (1) CN101875182B (OSRAM)
DE (1) DE102010018423B4 (OSRAM)
FR (1) FR2944986B1 (OSRAM)
TW (1) TWI506127B (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098557A (ja) * 2011-10-27 2013-05-20 Rohm & Haas Electronic Materials Cmp Holdings Inc 調整可能な研磨配合物を用いて研磨する方法
JP2013118361A (ja) * 2011-10-27 2013-06-13 Rohm & Haas Electronic Materials Cmp Holdings Inc 基板を研磨する方法
JP2018070870A (ja) * 2016-10-19 2018-05-10 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 低砥粒シリカ粒子の水性組成物

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9534148B1 (en) * 2015-12-21 2017-01-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2007251141A (ja) * 2006-02-08 2007-09-27 Rohm & Haas Electronic Materials Cmp Holdings Inc 多成分障壁研磨液
JP2008244450A (ja) * 2007-02-26 2008-10-09 Fujifilm Corp 研磨液

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551168A (en) 1966-08-01 1970-12-29 Armour Ind Chem Co Protective polish
KR20020086949A (ko) * 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 실리콘 옥사이드의 선택적 제거를 위한 시스템
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7704125B2 (en) * 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20060189269A1 (en) * 2005-02-18 2006-08-24 Roy Pradip K Customized polishing pads for CMP and methods of fabrication and use thereof
EP1566420A1 (en) * 2004-01-23 2005-08-24 JSR Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
US7731864B2 (en) * 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
US20080220610A1 (en) 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
KR100827591B1 (ko) * 2006-11-27 2008-05-07 제일모직주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
JP5285866B2 (ja) * 2007-03-26 2013-09-11 富士フイルム株式会社 研磨液
JP2009081200A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 研磨液

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101545A (ja) * 2003-08-05 2005-04-14 Rohm & Haas Electronic Materials Cmp Holdings Inc 半導体層を研磨するための組成物
JP2007251141A (ja) * 2006-02-08 2007-09-27 Rohm & Haas Electronic Materials Cmp Holdings Inc 多成分障壁研磨液
JP2008244450A (ja) * 2007-02-26 2008-10-09 Fujifilm Corp 研磨液

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098557A (ja) * 2011-10-27 2013-05-20 Rohm & Haas Electronic Materials Cmp Holdings Inc 調整可能な研磨配合物を用いて研磨する方法
JP2013118361A (ja) * 2011-10-27 2013-06-13 Rohm & Haas Electronic Materials Cmp Holdings Inc 基板を研磨する方法
JP2018070870A (ja) * 2016-10-19 2018-05-10 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 低砥粒シリカ粒子の水性組成物
JP7002907B2 (ja) 2016-10-19 2022-01-20 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 低砥粒シリカ粒子の水性組成物

Also Published As

Publication number Publication date
DE102010018423A1 (de) 2010-11-04
CN101875182A (zh) 2010-11-03
FR2944986A1 (fr) 2010-11-05
TWI506127B (zh) 2015-11-01
JP6128161B2 (ja) 2017-05-17
KR101698008B1 (ko) 2017-01-19
CN101875182B (zh) 2012-12-05
FR2944986B1 (fr) 2015-08-21
DE102010018423B4 (de) 2021-06-17
TW201043685A (en) 2010-12-16
US20100279507A1 (en) 2010-11-04
US8119529B2 (en) 2012-02-21
JP2015188093A (ja) 2015-10-29
KR20100118945A (ko) 2010-11-08

Similar Documents

Publication Publication Date Title
JP6128161B2 (ja) 基板をケミカルメカニカルポリッシングする方法
JP5361306B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
JP6137793B2 (ja) タングステンをケミカルメカニカルポリッシングするための方法
JP6595227B2 (ja) ケミカルメカニカルポリッシング組成物及びタングステン研磨法
KR101945221B1 (ko) 구리의 화학 기계적 연마 방법
JP5957777B2 (ja) ポリシリコン、酸化ケイ素および窒化ケイ素を含む基体を研磨する方法
JP3974127B2 (ja) 半導体装置の製造方法
JP6019523B2 (ja) 安定化した濃縮可能なケミカルメカニカルポリッシング組成物および基板研磨方法
JP2007251141A (ja) 多成分障壁研磨液
JP5843093B2 (ja) 安定化されたケミカルメカニカルポリッシング組成物及び基板を研磨する方法
TWI629324B (zh) 研磨基板之方法
JP2018129508A (ja) タングステンのための化学機械研磨法
TW202330818A (zh) 提高多晶矽的移除速率之方法
KR20190057084A (ko) 텅스텐을 위한 화학 기계적 연마 방법
JP6021584B2 (ja) 調整可能な研磨配合物を用いて研磨する方法
KR100725550B1 (ko) 구리 배선 연마용 슬러리 조성물 및 이를 이용한 금속배선 연마 방법
TWI601198B (zh) 化學機械研磨基板之方法
KR20180117609A (ko) 기판의 화학 기계적 연마 방법
KR20050067847A (ko) 텅스텐 배선 연마용 ｃｍｐ 슬러리
HK1047764A (en) Polishing slurry for the chemical-mechanical polishing of metal and dielectric structures
KR20100075174A (ko) 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130321

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130321

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140311

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140610

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140613

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140710

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150113

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150513

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20150521

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20150724