JP2010245186A - 半導体光通信モジュール及び、その製造方法 - Google Patents
半導体光通信モジュール及び、その製造方法 Download PDFInfo
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- JP2010245186A JP2010245186A JP2009090354A JP2009090354A JP2010245186A JP 2010245186 A JP2010245186 A JP 2010245186A JP 2009090354 A JP2009090354 A JP 2009090354A JP 2009090354 A JP2009090354 A JP 2009090354A JP 2010245186 A JP2010245186 A JP 2010245186A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12119—Bend
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
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- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/30105—Capacitance
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- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0064—Anti-reflection components, e.g. optical isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
【解決手段】本発明に係る半導体光通信モジュールは、光信号を出力する発光素子と、屈曲した光導波路とを搭載したチップと;前記チップを搭載したキャリアと;前記キャリアに対向して配置され、前記チップから出力される変調光信号が入射するレンズモジュールとを備える。そして、前記レンズモジュールの入射側端面と前記キャリアの端面とが平行になりかつ前記レンズモジュールの入射側端面と前記光導波路からの出射光とが垂直になるように前記レンズモジュールと前記キャリアと前記チップとを配置したことを特徴とする。
【選択図】図2
Description
12:EML−COC(チップ・オン・キャリア)
14:TEC(Temperature Controller)
16:レンズ
18:レンズ固定台
22:アイソレータ
24:光ファイバ
30:高周波信号ライン
36:LD部(レーザ部)
38:EA部(電界吸収部)
40:曲がり導波路
42:レンズモジュール
Claims (5)
- 光信号を出力する発光素子と、屈曲した光導波路とを搭載したチップと;
前記チップを搭載したキャリアと;
前記キャリアに対向して配置され、前記チップから出力される変調光信号が入射するレンズモジュールとを備え、
前記レンズモジュールの入射側端面と前記キャリアの端面とが平行になりかつ前記レンズモジュールの入射側端面と前記光導波路からの出射光とが垂直になるように前記レンズモジュールと前記キャリアと前記チップとを配置したことを特徴とする半導体光通信モジュール。 - 前記キャリアには前記変調素子と連結された高周波信号ラインが設けられ、
前記チップの前記レンズモジュール側の第1の端面と前記高周波信号ラインとの距離が、前記チップの前記第1の端面と反対側の第2の端面と前記高周波信号ラインとの距離よりも小さくなるように設定したことを特徴とする請求項1に記載の半導体光通信モジュール。 - 前記チップは、光信号を変調させる変調素子を含むEML(Electro absorption Modulated Laser:EA変調器集積型半導体レーザ)であることを特徴とする請求項1又は2に記載の半導体光通信モジュール。
- 前記チップは、光信号を変調させる変調素子を含むEML(Electro absorption
Modulated Laser:EA変調器集積型半導体レーザ)であり、
前記変調素子は、変調信号が供給される電極パッドを有し、
前記電極パッドは、前記導波路と前記高周波信号ラインとの間に配置されていることを特徴とする請求項2に記載の半導体光通信モジュール。 - 前記請求項1に記載の半導体光通信モジュールの実装方法において、
前記キャリア及びレンズモジュールを実装し、
その後、前記レンズモジュールの少なくとも一部を動かすことによって互いの光軸調整を行うことを特徴とする半導体光通信モジュールの実装方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2009090354A JP5483677B2 (ja) | 2009-04-02 | 2009-04-02 | 半導体光通信モジュール及び、その製造方法 |
US12/659,967 US8277131B2 (en) | 2009-04-02 | 2010-03-26 | Semiconductor optical communication module and manufacturing method thereof |
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JP2009090354A JP5483677B2 (ja) | 2009-04-02 | 2009-04-02 | 半導体光通信モジュール及び、その製造方法 |
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JP2010245186A true JP2010245186A (ja) | 2010-10-28 |
JP5483677B2 JP5483677B2 (ja) | 2014-05-07 |
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JP (1) | JP5483677B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014090097A (ja) * | 2012-10-30 | 2014-05-15 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
WO2020162217A1 (ja) * | 2019-02-06 | 2020-08-13 | 日本電信電話株式会社 | 光送信器 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108879321A (zh) * | 2018-09-12 | 2018-11-23 | 成都微泰光芯技术有限公司 | 一种集成soa的eml芯片 |
US10547158B1 (en) * | 2018-10-31 | 2020-01-28 | Avago Technologies International Sales Pte. Limited | Optical communication device and system |
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JP2014090097A (ja) * | 2012-10-30 | 2014-05-15 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
WO2020162217A1 (ja) * | 2019-02-06 | 2020-08-13 | 日本電信電話株式会社 | 光送信器 |
JP2020127168A (ja) * | 2019-02-06 | 2020-08-20 | 日本電信電話株式会社 | 光送信器 |
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US20100254665A1 (en) | 2010-10-07 |
US8277131B2 (en) | 2012-10-02 |
JP5483677B2 (ja) | 2014-05-07 |
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