JP2010232203A - Light emission device and method of manufacturing the same - Google Patents

Light emission device and method of manufacturing the same Download PDF

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JP2010232203A
JP2010232203A JP2009074879A JP2009074879A JP2010232203A JP 2010232203 A JP2010232203 A JP 2010232203A JP 2009074879 A JP2009074879 A JP 2009074879A JP 2009074879 A JP2009074879 A JP 2009074879A JP 2010232203 A JP2010232203 A JP 2010232203A
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sealing layer
led chip
emitting device
light
hardness
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JP5223116B2 (en
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Shoken Koseki
正賢 古関
Eiki Kono
永樹 河野
Aya Kawaoka
あや 川岡
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure of an LED lamp or a method of manufacturing the same, capable of preventing deterioration of light extraction efficiency while improving the light extraction efficiency. <P>SOLUTION: A light emission device includes: an LED chip mounted on a metal lead exposed to a recessed part bottom surface of a case; a first sealing layer with a light diffusing material dispersed therein, which is provided to cover the metal lead while exposing the LED chip; and a second sealing layer provided on the first sealing layer. The first sealing layer has a first hardness, the second sealing layer has a second hardness, and the first hardness is higher than the second hardness. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は発光装置の改良に関する。   The present invention relates to an improvement of a light emitting device.

ＬＥＤランプの光取り出し効率を向上するために様々な検討がなされている。特許文献１には、ＬＥＤチップが設置される凹部に充填される封止部材を、ＬＥＤチップ周囲の凹部底面上に設けられる光拡散層と、その他の凹部内に充填される光透過性封止層とからなる２層構造とする構成が開示されている。特許文献１の構成では、当該凹部底面付近での反射率を高めて光り取り出し効率を向上している。特許文献２には、ＬＥＤチップ周囲の凹部底面の他、凹部内側の表面に高い反射率を有する樹脂層を設けて光り取り出し効率の向上を図っている。   Various studies have been made to improve the light extraction efficiency of LED lamps. In Patent Document 1, a sealing member filled in a recess in which an LED chip is installed, a light diffusion layer provided on the bottom surface of the recess around the LED chip, and a light-transmitting seal filled in the other recess A configuration having a two-layer structure composed of layers is disclosed. In the configuration of Patent Document 1, the light extraction efficiency is improved by increasing the reflectance near the bottom of the recess. In Patent Document 2, a resin layer having a high reflectance is provided on the inner surface of the recess in addition to the bottom surface of the recess around the LED chip to improve the light extraction efficiency.

特開平１１−２８４２３４号公報Japanese Patent Laid-Open No. 11-284234 特開２００８−６０３４４号公報JP 2008-60344 A

通常、ＬＥＤチップの封止部材としてガスバリア性の高いエポキシ樹脂系部材が使用される。ところが、エポキシ樹脂系の封止部材はＬＥＤチップの熱により変色して光り取り出し効率を低下させる恐れがある。発熱量の多い高輝度ＬＥＤチップを使用する場合は光取り出し効率の低下が顕著となる。特許文献１及び２に開示の構成では、エポキシ樹脂系の封止部材の変色に起因する光取り出し効率の低下を防ぐことはできない。そこで、エポキシ樹脂系の封止部材に替えて、ＬＥＤチップの熱で変色しないシリコーン樹脂系の封止部材を使用することが考えられる。しかし、シリコーン樹脂系の封止部材はエポキシ樹脂系の封止部材に比べてガスバリア性が低いため、金属リードやＬＥＤチップを囲繞するリフレクタ表面が外気に触れることとなる。これにより、金属リードの表面が変色して光取り出し効率が低下する。特に、金属リードの表面に銀メッキが施されている場合には当該反射率の低下が顕著となる。
そこで、本発明は、光取り出し効率が向上されるとともに、光取り出し効率の低下が防止される発光装置の構成または製造方法を提供することを目的とする。 Usually, an epoxy resin-based member having a high gas barrier property is used as a sealing member for the LED chip. However, the epoxy resin-based sealing member may be discolored by the heat of the LED chip to reduce the light extraction efficiency. When using a high-brightness LED chip that generates a large amount of heat, the light extraction efficiency is significantly reduced. The configurations disclosed in Patent Documents 1 and 2 cannot prevent a decrease in light extraction efficiency due to discoloration of the epoxy resin-based sealing member. Therefore, it is conceivable to use a silicone resin-based sealing member that does not discolor due to the heat of the LED chip, instead of the epoxy resin-based sealing member. However, since the silicone resin-based sealing member has a lower gas barrier property than the epoxy resin-based sealing member, the reflector surface surrounding the metal lead and the LED chip comes into contact with the outside air. As a result, the surface of the metal lead changes color and the light extraction efficiency decreases. In particular, when the surface of the metal lead is silver-plated, the reduction in the reflectance becomes significant.
Accordingly, an object of the present invention is to provide a configuration or a manufacturing method of a light emitting device in which light extraction efficiency is improved and a decrease in light extraction efficiency is prevented.

以上の目的を達成するため、本発明は次の構成からなる。即ち、
ケースの凹部底面に表出する金属リードに搭載されたＬＥＤチップと、
前記金属リードを被覆し、かつ前記ＬＥＤチップが表出するように設けられ、光拡散材が分散されてなる第１の封止層と、
前記第１の封止層の上に設けられる第２の封止層と、
を備える発光装置であって、
前記第１の封止層は第１の硬さを有し、前記第２の封止層は第２の硬さを有し、該第１の硬さは該第２の硬さよりも硬い、ことを特徴とする発光装置である。 In order to achieve the above object, the present invention has the following configuration. That is,
An LED chip mounted on a metal lead exposed on the bottom of the recess of the case;
A first sealing layer that covers the metal lead and is provided so that the LED chip is exposed, and in which a light diffusion material is dispersed;
A second sealing layer provided on the first sealing layer;
A light emitting device comprising:
The first sealing layer has a first hardness, the second sealing layer has a second hardness, and the first hardness is harder than the second hardness, This is a light-emitting device.

本発明の発光装置では、第１の封止層は第２の封止層よりも硬いため、第１の封止層は第２の封止層よりも高いガスバリア性を有する。これにより、金属リードの変色が防止され、光取り出し効率が向上する。さらに、第１の封止層には光拡散材が分散されているため、金属リードが変色した場合にも、当該光拡散材によりＬＥＤチップの光を反射して取り出せるため、光取り出し効率の低下が防止される。   In the light emitting device of the present invention, since the first sealing layer is harder than the second sealing layer, the first sealing layer has a higher gas barrier property than the second sealing layer. Thereby, discoloration of the metal lead is prevented and the light extraction efficiency is improved. Furthermore, since the light diffusing material is dispersed in the first sealing layer, even when the metal lead is discolored, the light diffusing material can reflect and extract the light from the LED chip. Is prevented.

発光装置１の斜視図である。1 is a perspective view of a light emitting device 1. FIG. 図１におけるＡ−Ａ線断面図である。It is the sectional view on the AA line in FIG. 発光装置１の製造方法の工程を示すフロー図である。FIG. 3 is a flowchart showing a process of the method for manufacturing the light emitting device 1.

本発明の発光装置は、ケースの凹部底面に表出する金属リードにＬＥＤチップが搭載される。発光装置は、フェイスアップ型ＳＭＤやフリップチップ型ＳＭＤなどのトップビュー型のＬＥＤランプの他、サイドビュー型、砲弾タイプ型、ＣＯＢ型など各種のＬＥＤランプパッケージを採用できる。金属リードには銀メッキを施すことが好ましい。光の取り出し効率が向上するからである。ケースの凹部表面に反射性をもたせることが好ましい。例えば、白色樹脂からなるケースとして、当該凹部の表面を白色の反射面とすることができる。これにより光の取り出し効率を向上できる。   In the light emitting device of the present invention, the LED chip is mounted on the metal lead exposed on the bottom surface of the concave portion of the case. The light emitting device can employ various LED lamp packages such as a side view type, a shell type, and a COB type in addition to a top view type LED lamp such as a face-up type SMD and a flip chip type SMD. The metal lead is preferably plated with silver. This is because the light extraction efficiency is improved. It is preferable to provide reflectivity to the concave surface of the case. For example, as a case made of a white resin, the surface of the concave portion can be a white reflecting surface. Thereby, the light extraction efficiency can be improved.

本発明の発光装置は、金属リードを被覆し、かつＬＥＤチップが表出するように設けられ、光拡散材が分散されてなる第１の封止層を備える。第１の封止層の基材は、シリコーン樹脂であることが好ましい。ＬＥＤチップの発する熱によって変色しないため、当該熱により透明性が低下しないからである。光拡散材は熱、光により変色しないものが好ましい。光分散材としては、例えば、シリカ、シリコーン、ガラスビーズ、ガラス繊維などの透明フィラーや、酸化チタン、チタン酸カリウムなどの白色フィラーをあげることができる。中でも耐熱性、耐光性及び反射率の観点から酸化チタン、チタン酸カリウムが好ましい。フィラーの形状は特に限定されず、破砕状、りんぺん状、棒状、繊維状などとすることができる。   The light-emitting device of the present invention includes a first sealing layer that covers a metal lead and is provided so that an LED chip is exposed and in which a light diffusing material is dispersed. The base material of the first sealing layer is preferably a silicone resin. This is because the heat does not change due to the heat generated by the LED chip, and the transparency does not deteriorate due to the heat. The light diffusing material is preferably one that does not discolor due to heat or light. Examples of the light dispersion material include transparent fillers such as silica, silicone, glass beads, and glass fibers, and white fillers such as titanium oxide and potassium titanate. Of these, titanium oxide and potassium titanate are preferable from the viewpoints of heat resistance, light resistance and reflectance. The shape of the filler is not particularly limited, and may be a crushed shape, a chopped shape, a rod shape, a fiber shape, or the like.

本発明の発光装置は、第１の封止層の上に第２の封止層を備える。第２の封止層は、シリコーン樹脂からなることが好ましい。第１の封止層と同様に、ＬＥＤチップの発する熱によって変色しないため、当該熱により透明性が低下しないからである。第２の封止層は第１の封止層よりも柔らかい。第１の封止層の硬さを第１の硬さとし、第２の封止層の硬さを第２の硬さとするとき、例えば、第１の硬さはＳｈｏｒｅＤ３０以上、好ましくはＳｈｏｒｅＤ３０〜５０、より好ましくはＳｈｏｒｅＤ３０〜４０とし、第２の硬さはＳｈｏｒｅＡ３０〜８０、好ましくはＳｈｏｒｅＡ４０〜７０、より好ましくはＳｈｏｒｅＡ４０〜６０である。このように、第１の封止層は第２の封止層よりも硬いため、第１の封止層は第２の封止層よりも高いガスバリア性を有する。これにより、金属リードが変色することが防止され、反射率の低下を防止できる。また、第１の封止層はレジン型のシリコーン樹脂へ光拡散材を分散させてなり、第２の封止層はエラストマ型のシリコーン樹脂からなることが好ましい。レジン型のシリコーン樹脂はエラストマ型のシリコーン樹脂よりも硬く、ガスバリア性が高いからである。また、第１の封止層と第２の封止層がともにシリコーン樹脂からなるため、両者の接着性が高く、剥離が防止されて信頼性が高い。   The light emitting device of the present invention includes a second sealing layer on the first sealing layer. The second sealing layer is preferably made of a silicone resin. This is because, like the first sealing layer, the color does not change due to the heat generated by the LED chip, and thus the transparency does not deteriorate due to the heat. The second sealing layer is softer than the first sealing layer. When the hardness of the first sealing layer is the first hardness and the hardness of the second sealing layer is the second hardness, for example, the first hardness is Shore D30 or more, preferably Shore D 30-50. More preferably, Shore D30-40, and the second hardness is Shore A 30-80, preferably Shore A 40-70, more preferably Shore A 40-60. Thus, since the first sealing layer is harder than the second sealing layer, the first sealing layer has a higher gas barrier property than the second sealing layer. Thereby, discoloration of the metal lead is prevented, and a decrease in reflectance can be prevented. The first sealing layer is preferably made by dispersing a light diffusing material in a resin type silicone resin, and the second sealing layer is preferably made of an elastomer type silicone resin. This is because resin-type silicone resins are harder than elastomer-type silicone resins and have higher gas barrier properties. In addition, since both the first sealing layer and the second sealing layer are made of a silicone resin, the adhesiveness between them is high, peeling is prevented, and the reliability is high.

本発明の他の局面は、発光装置の製造方法であって、以下のとおりである。すなわち、ケースの凹部底面に表出された金属リードへＬＥＤチップを搭載するＬＥＤチップ搭載ステップと、金属リードを被覆し、かつＬＥＤチップが表出するように第１の封止層を形成する第１の封止層形成ステップと、第１の封止層の上に第２の封止層を形成する第２の封止層形成ステップと、を含む発光装置の製造方法であって、第１の封止層はレジン型シリコーン樹脂へ光拡散材を分散させてなる第１の封止部材からなり、第２の封止層はエラストマ型シリコーン樹脂からなる第２の封止部材からなる、ことを特徴とする発光装置の製造方法である。当該製造方法によれば、レジン型シリコーン樹脂からなる第１の封止層と、エラストマ型シリコーン樹脂からなり、第１の封止層の上に形成される第２の封止層とでＬＥＤチップが封止される。   Another aspect of the present invention is a method for manufacturing a light-emitting device as follows. That is, the LED chip mounting step of mounting the LED chip on the metal lead exposed on the bottom surface of the concave portion of the case, and the first sealing layer is formed so as to cover the metal lead and expose the LED chip. 1. A method for manufacturing a light emitting device, comprising: a first sealing layer forming step; and a second sealing layer forming step of forming a second sealing layer on the first sealing layer. The sealing layer is made of a first sealing member in which a light diffusing material is dispersed in a resin type silicone resin, and the second sealing layer is made of a second sealing member made of an elastomer type silicone resin. A method for manufacturing a light emitting device characterized by the following. According to the manufacturing method, an LED chip includes a first sealing layer made of a resin type silicone resin and a second sealing layer made of an elastomer type silicone resin and formed on the first sealing layer. Is sealed.

第２の封止層形成ステップにおいて第１の封止層及び第２の封止層は未硬化状態であり、第２の封止層形成ステップの後に、第１の封止層及び第２の封止層を同時に硬化する硬化ステップをさらに含むことが好ましい。第１の封止層及び第２の封止層を同時に硬化することにより、製造工程を簡略化することができる。硬化方法は、熱硬化、紫外線硬化、光硬化など使用する封止層の材料にあわせて適宜決定される。   In the second sealing layer forming step, the first sealing layer and the second sealing layer are in an uncured state, and after the second sealing layer forming step, the first sealing layer and the second sealing layer are formed. It is preferable to further include a curing step for simultaneously curing the sealing layer. By simultaneously curing the first sealing layer and the second sealing layer, the manufacturing process can be simplified. The curing method is appropriately determined according to the material of the sealing layer to be used, such as thermal curing, ultraviolet curing, or photocuring.

第１の封止層及び第２の封止層が未硬化の状態において、第１の封止層の粘度は第２の封止層の粘度よりも大きいことが好ましい。第２の封止層形成ステップ又は硬化ステップにおいて、第１の封止層と第２の封止層の混合及び相互拡散が防止されるからである。   In a state where the first sealing layer and the second sealing layer are uncured, the viscosity of the first sealing layer is preferably larger than the viscosity of the second sealing layer. This is because mixing and mutual diffusion of the first sealing layer and the second sealing layer are prevented in the second sealing layer forming step or the curing step.

第２の封止層には蛍光材が分散され、第２の封止層における蛍光材の重量比が、第１の封止層における光拡散材の重量比より小さいことが好ましい。上層となる第２の封止層が下層となる第１の封止層よりも比重が小さくなるため、第２の封止層形成ステップ又は硬化ステップにおいて、第１の封止層と第２の封止層の混合及び相互拡散が防止されるからである。
以下、本発明の実施の形態につき、図例を参照しながら説明をする。 It is preferable that a fluorescent material is dispersed in the second sealing layer, and the weight ratio of the fluorescent material in the second sealing layer is smaller than the weight ratio of the light diffusion material in the first sealing layer. Since the specific gravity of the second sealing layer as the upper layer is smaller than that of the first sealing layer as the lower layer, the first sealing layer and the second sealing layer are formed in the second sealing layer forming step or the curing step. This is because mixing and mutual diffusion of the sealing layer are prevented.
Hereinafter, embodiments of the present invention will be described with reference to the drawings.

本発明の実施例である発光装置１の斜視図を図１に示す。発光装置１は表面実装型のＬＥＤランプであって、ＬＥＤチップ１０、ケース２０、金属リード３０を備える。図１におけるＡ−Ａ線断面図を図２に示す。ケース２０はナイロン製の樹脂ケースであって、図１及び２に示すように部分円錐状の凹部２１を備え、金属リード３０ともにインサート成形されてなる。金属リード３０はその一部が凹部２１の底面に表出しており、当該表出領域には銀メッキが施されている。また、金属リード３０の表出領域にはＬＥＤチップ１０が実装される。ＬＥＤチップ１０はフェイスアップ型のＬＥＤチップであって、ボンディングワイヤ１１で金属リード３０と電気的に接続される。
ＬＥＤチップ１０は封止部材４０によって封止される。封止部材４０は第１の封止層４１と、第２の封止層４２とからなる。第１の封止層４１はレジン型のシリコーン樹脂からなり、その硬度はＳｈｏｒｅＤ３０である。さらに、第１の封止層４１には、１０重量％の酸化チタン製の白色フィラーが分散されている。一方、第２の封止層４２はエラストマ型のシリコーン樹脂からなり、その硬度はＳｈｏｒｅＡ４０である。図２に示すように、第１の封止層４１は金属リード３０の表出領域とＬＥＤチップ１０実装領域を除く凹部２１の表面の略全域を覆うように設けられている。ただし、凹部２１の底部２１ａにおける第１の封止層４１の厚さは、ＬＥＤチップ１０の高さよりも小さく、ＬＥＤチップ１０の上面（凹部２１の開口側の面）には第１の封止層４１は形成されていない。第２の封止層４２は第１の封止層４１の上及びＬＥＤチップ１０の上に形成されて、凹部２１を充填している。なお、第２の封止層４２には１０重量％の蛍光材が含有されている。 FIG. 1 shows a perspective view of a light emitting device 1 that is an embodiment of the present invention. The light emitting device 1 is a surface mount type LED lamp, and includes an LED chip 10, a case 20, and a metal lead 30. A cross-sectional view taken along line AA in FIG. 1 is shown in FIG. The case 20 is a nylon resin case, and includes a partially conical recess 21 as shown in FIGS. 1 and 2 and is insert-molded together with the metal lead 30. A part of the metal lead 30 is exposed on the bottom surface of the recess 21, and the exposed region is silver-plated. The LED chip 10 is mounted on the exposed area of the metal lead 30. The LED chip 10 is a face-up type LED chip, and is electrically connected to the metal lead 30 by a bonding wire 11.
The LED chip 10 is sealed with a sealing member 40. The sealing member 40 includes a first sealing layer 41 and a second sealing layer 42. The first sealing layer 41 is made of a resin-type silicone resin and has a hardness of Shore D30. Furthermore, 10% by weight of a white filler made of titanium oxide is dispersed in the first sealing layer 41. On the other hand, the second sealing layer 42 is made of an elastomer type silicone resin and has a hardness of Shore A40. As shown in FIG. 2, the first sealing layer 41 is provided so as to cover substantially the entire surface of the recess 21 except the exposed area of the metal lead 30 and the LED chip 10 mounting area. However, the thickness of the first sealing layer 41 at the bottom 21a of the recess 21 is smaller than the height of the LED chip 10, and the first sealing is provided on the upper surface of the LED chip 10 (the surface on the opening side of the recess 21). Layer 41 is not formed. The second sealing layer 42 is formed on the first sealing layer 41 and the LED chip 10 and fills the recess 21. The second sealing layer 42 contains 10% by weight of a fluorescent material.

次に、実施例の発光装置１と封止樹脂が異なる比較例を用い、比較実験を行った。比較例１の封止部材はレジン型のシリコーン樹脂からなる一層構造であって、その硬度はＳｈｏｒｅＤ３０である。比較例２の封止部材はエポキシ樹脂からなる一層構造であって、その硬度はＳｈｏｒｅＤ８０である。なお、比較例１、２の封止部材には１０重量％の蛍光材がそれぞれ分散されている。
比較実験の実験条件は以下の通りである。まず、比較実験１は、１０００時間の高温通電後の光度維持率を測定する。当該光度維持率が８０％以上のものを○とし、８０％未満のものを×とする。比較実験２は、雰囲気温度を−４０℃から１００℃への温度変化させて再度−４０℃に戻すことを一サイクルとして、当該温度サイクルを１０００回実施した後の点灯状態について、不点灯のものがないもの○とし、不点灯のものがあるもの×とする。なお、比較実験１、２はともに２０個の発光装置を対象に行った。実施例及び比較例１、２の封止樹脂の種類と比較実験の結果を表１に示す。 Next, a comparative experiment was performed using a comparative example in which the light emitting device 1 of the example and the sealing resin were different. The sealing member of Comparative Example 1 has a single layer structure made of a resin type silicone resin, and its hardness is Shore D30. The sealing member of Comparative Example 2 has a single layer structure made of an epoxy resin, and its hardness is Shore D80. Note that 10% by weight of the fluorescent material is dispersed in the sealing members of Comparative Examples 1 and 2.
The experimental conditions of the comparative experiment are as follows. First, comparative experiment 1 measures the luminous intensity maintenance rate after high-temperature energization for 1000 hours. The thing with the said luminous intensity maintenance factor of 80% or more is set as (circle), and the thing below 80% is set as x. In Comparative Experiment 2, the ambient temperature was changed from −40 ° C. to 100 ° C. and returned to −40 ° C. as one cycle, and the lighting state after 1000 times of the temperature cycle was not lighted. The symbol “○” indicates that there is no light, and the symbol “×” indicates that there is a non-lighting item. Note that both Comparative Experiments 1 and 2 were performed on 20 light emitting devices. Table 1 shows the types of sealing resins of Examples and Comparative Examples 1 and 2 and the results of comparative experiments.

Figure 2010232203
Figure 2010232203

比較実験１の結果によれば、表１に示すように、比較例１では光度が維持されたが、比較例２では光度の低下が著しかった。これは高温通電により、エポキシ樹脂からなる封止部材が変色し、光取り出し効率が低下したことが原因と考えられる。比較実験２の結果によれば、表１に示すように、比較例２では不点灯のものは発生しなかったが、比較例１では不点灯のものは発生した。これは、ボンディングワイヤに断線が生じて不点灯となったものである。この結果から、レジン型のシリコーン樹脂からなる一層構造の封止部材では、装置の信頼性が低いことがわかった。一方、実施例の発光装置１では、比較実験１において光度が維持されるとともに、比較実験２において不点灯となるものは発生しなかった。すなわち、実施例の発光装置１は、光取り出し効率の低下が防止されるとともに、信頼性の高い発光装置であることが確認できた。
さらに、実施例の発光装置１によれば、表１に示すように、第１の封止層４１は第２の封止層４２よりも硬度が高いため、第１の封止層４１は第２の封止層４２よりも高いガスバリア性を有する。これにより、銀メッキが施された金属リード３０の変色が防止され、光取り出し効率の低下が防止される。さらに、第１の封止層４１には光拡散材である白色フィラーが分散されているため、金属リード３０が変色した場合にも、当該白色フィラーによりＬＥＤチップ１０の光を反射して取り出せるため、光取り出し効率の低下がより一層防止される。加えて、第１の封止層４１はナイロン製のケース２０の凹部２１の内側面の略全域を覆っているため、当該凹部２１の内側面の変色も防止され、光取り出し効率の低下が一層防止される。また、封止部材４０は、第１の封止層４１と第２の封止層４２とからなる二層構造であるが、第１の封止層４１と第２の封止層４２はともにシリコーン樹脂からなるため、その接着性が高く、剥離などが生じにくい。 According to the result of the comparative experiment 1, as shown in Table 1, the light intensity was maintained in the comparative example 1, but the light intensity was significantly decreased in the comparative example 2. This is presumably because the sealing member made of epoxy resin was discolored due to high-temperature energization and the light extraction efficiency was lowered. According to the result of the comparative experiment 2, as shown in Table 1, in the comparative example 2, no non-lighting occurred, but in the comparative example 1, non-lighting occurred. This is because the bonding wire is disconnected and is not lit. From this result, it was found that the single-layer sealing member made of resin-type silicone resin has low device reliability. On the other hand, in the light emitting device 1 of the example, the light intensity was maintained in the comparative experiment 1, and no light was not turned on in the comparative experiment 2. That is, it was confirmed that the light emitting device 1 of the example was a highly reliable light emitting device while preventing a decrease in light extraction efficiency.
Furthermore, according to the light emitting device 1 of the example, as shown in Table 1, the first sealing layer 41 is higher in hardness than the second sealing layer 42, so The gas barrier property is higher than that of the second sealing layer 42. Thereby, discoloration of the metal lead 30 plated with silver is prevented, and a decrease in light extraction efficiency is prevented. Furthermore, since the first sealing layer 41 is dispersed with a white filler that is a light diffusing material, even when the metal lead 30 is discolored, the white filler reflects the light of the LED chip 10 so that it can be taken out. Further, a decrease in light extraction efficiency is further prevented. In addition, since the first sealing layer 41 covers substantially the entire area of the inner surface of the recess 21 of the nylon case 20, discoloration of the inner surface of the recess 21 is also prevented, and the light extraction efficiency is further reduced. Is prevented. In addition, the sealing member 40 has a two-layer structure including a first sealing layer 41 and a second sealing layer 42. The first sealing layer 41 and the second sealing layer 42 are both Since it is made of a silicone resin, its adhesiveness is high and peeling or the like hardly occurs.

本発明の実施例である発光装置１の製造方法の工程を示すフロー図を図３に示し、当該製造方法を以下に説明する。図３に示すように、まず、ケース２０の凹部２１底面２１ａに表出された金属リード３０へＬＥＤチップ１０を搭載する（ＬＥＤチップ搭載ステップＳ１）。次に、金属リード３０及び凹部２１の内側面を被覆し、かつＬＥＤチップ１０の上面が表出するように、レジン型シリコーン樹脂へ白色フィラーを分散させてなる第１の封止層４１を形成する（第１の封止層形成ステップＳ２）。第１の封止層４１はポッティングにより形成する。なお、第１の封止層形成ステップＳ２において第１の封止層４１は未硬化状態のままである。次に第１の封止層４１の上にエラストマ型シリコーン樹脂からなる第２の封止層４２を形成する（第２の封止層形成ステップＳ３）。第２の封止層４２はポッティングにより形成する。なお、第２の封止層形成ステップＳ３において第１の封止層４１及び第１の封止層４２は未硬化状態のままである。そして、未硬化状態第１の封止層４１及び第２の封止層４２を同時に硬化する（硬化ステップＳ４）。当該硬化ステップＳ４における効果条件は、１５０℃、１時間である。   FIG. 3 is a flowchart showing the steps of the method for manufacturing the light emitting device 1 according to the embodiment of the present invention. The manufacturing method will be described below. As shown in FIG. 3, first, the LED chip 10 is mounted on the metal lead 30 exposed on the bottom surface 21a of the recess 21 of the case 20 (LED chip mounting step S1). Next, a first sealing layer 41 formed by dispersing a white filler in a resin type silicone resin is formed so as to cover the inner side surfaces of the metal lead 30 and the recess 21 and to expose the upper surface of the LED chip 10. (First sealing layer forming step S2). The first sealing layer 41 is formed by potting. In the first sealing layer forming step S2, the first sealing layer 41 remains uncured. Next, a second sealing layer 42 made of an elastomeric silicone resin is formed on the first sealing layer 41 (second sealing layer forming step S3). The second sealing layer 42 is formed by potting. In the second sealing layer forming step S3, the first sealing layer 41 and the first sealing layer 42 remain uncured. Then, the uncured first sealing layer 41 and the second sealing layer 42 are simultaneously cured (curing step S4). The effect condition in the curing step S4 is 150 ° C. for 1 hour.

未硬化状態において、第１の封止層４１は第２の封止層４２に対して、その粘度及び／又は比重が大きい。これにより、硬化ステップＳ４において、第１の封止層４１と第２の封止層４２のマイグレーション（拡散混合）が防止され、第１の封止層４１が金属リード３０の表出領域とＬＥＤチップ１０実装領域を除く凹部２１の表面の略全域を良好に覆うことができる。これにより、光取り出し効率の低下が防止される。なお、本実施例では、白色フィラーを分散させてなる第１の封止層４１を使用して当該製造方法により発光装置１を製造したが、白色フィラーを含まない第１の封止層を形成する場合にも、当該製造方法を適用することができる。この場合においても第１の封止層と第２の封止層のマイグレーション（拡散混合）が防止され、第１の封止層と第２の封止層を良好に形成することができる。   In the uncured state, the first sealing layer 41 has a higher viscosity and / or specific gravity than the second sealing layer 42. Thereby, in the curing step S4, migration (diffusion mixing) of the first sealing layer 41 and the second sealing layer 42 is prevented, and the first sealing layer 41 is exposed to the exposed region of the metal lead 30 and the LED. It is possible to satisfactorily cover substantially the entire surface of the recess 21 except for the chip 10 mounting area. Thereby, the fall of light extraction efficiency is prevented. In the present example, the light emitting device 1 was manufactured by the manufacturing method using the first sealing layer 41 in which the white filler was dispersed, but the first sealing layer not including the white filler was formed. Also in this case, the manufacturing method can be applied. Even in this case, migration (diffusion mixing) between the first sealing layer and the second sealing layer is prevented, and the first sealing layer and the second sealing layer can be formed well.

本実施の発光装置１では第１の封止層４１は１０重量％の白色フィラーを含み、第２の封止層４２は蛍光材を、第１の封止層４１における白色フィラーの含有量と同じ１０重量％含むこととしたが、第２の封止層４２における蛍光材の重量比を、第１の封止層４１における白色フィラーの重量比よりも小さくしてもよい。これにより、下層となる第１の封止層４１の比重よりも上層となる第２の封止層４２の比重が小さくできるため、第２の封止層形成ステップＳ３及び硬化ステップＳ４において、第１の封止層と第２の封止層のマイグレーションが防止できる。   In the light emitting device 1 of the present embodiment, the first sealing layer 41 includes 10% by weight of white filler, the second sealing layer 42 includes the fluorescent material, and the white filler content in the first sealing layer 41. Although the same 10% by weight is included, the weight ratio of the fluorescent material in the second sealing layer 42 may be smaller than the weight ratio of the white filler in the first sealing layer 41. Thereby, since the specific gravity of the second sealing layer 42 that is the upper layer can be made smaller than the specific gravity of the first sealing layer 41 that is the lower layer, in the second sealing layer forming step S3 and the curing step S4, Migration of the first sealing layer and the second sealing layer can be prevented.

本発明の発光装置は、様々な装置の光源として利用することができる。   The light emitting device of the present invention can be used as a light source of various devices.

１ 発光装置
１０ ＬＥＤチップ
２０ ケース
２１ 凹部
３０ 金属リード
４０ 封止部材
４１ 第１の封止層
４２ 第２の封止層 DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 20 Case 21 Recess 30 Metal lead 40 Sealing member 41 1st sealing layer 42 2nd sealing layer

Claims (7)

ケースの凹部底面に表出する金属リードに搭載されたＬＥＤチップと、
前記金属リードを被覆し、かつ前記ＬＥＤチップが表出するように設けられ、光拡散材が分散されてなる第１の封止層と、
前記第１の封止層の上に設けられる第２の封止層と、
を備える発光装置であって、
前記第１の封止層は第１の硬さを有し、前記第２の封止層は第２の硬さを有し、該第１の硬さは該第２の硬さよりも硬い、ことを特徴とする発光装置。 An LED chip mounted on a metal lead exposed on the bottom of the recess of the case;
A first sealing layer that covers the metal lead and is provided so that the LED chip is exposed, and in which a light diffusion material is dispersed;
A second sealing layer provided on the first sealing layer;
A light emitting device comprising:
The first sealing layer has a first hardness, the second sealing layer has a second hardness, and the first hardness is harder than the second hardness, A light emitting device characterized by that. 前記第１の封止層はレジン型のシリコーン樹脂からなり、前記第２の封止層はエラストマ型のシリコーン樹脂からなる、請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the first sealing layer is made of a resin type silicone resin, and the second sealing layer is made of an elastomer type silicone resin. 前記第１の封止層は、前記ケースの凹部の表面の実質的に全域を被覆する、請求項１又は２に記載の発光装置。   The light emitting device according to claim 1, wherein the first sealing layer covers substantially the entire area of the surface of the concave portion of the case. ケースの凹部底面に表出された金属リードへＬＥＤチップを搭載するＬＥＤチップ搭載ステップと、
前記金属リードを被覆し、かつＬＥＤチップが表出するように第１の封止層を形成する第１の封止層形成ステップと、
前記第１の封止層の上に第２の封止層を形成する第２の封止層形成ステップと、
を含む発光装置の製造方法であって、
前記第１の封止層はレジン型シリコーン樹脂へ光拡散材を分散させてなる第１の封止部材からなり、前記第２の封止層はエラストマ型シリコーン樹脂からなる第２の封止部材からなる、ことを特徴とする発光装置の製造方法。 LED chip mounting step for mounting the LED chip on the metal lead exposed on the bottom surface of the concave portion of the case;
A first sealing layer forming step of covering the metal lead and forming a first sealing layer so that the LED chip is exposed;
A second sealing layer forming step of forming a second sealing layer on the first sealing layer;
A method of manufacturing a light emitting device including:
The first sealing layer is composed of a first sealing member in which a light diffusing material is dispersed in a resin type silicone resin, and the second sealing layer is composed of an elastomer type silicone resin. The manufacturing method of the light-emitting device characterized by these. 前記第２の封止層形成ステップにおいて、前記第１の封止層及び前記第２の封止層は未硬化状態であり、前記第２の封止層形成ステップの後に、前記第１の封止層及び前記第２の封止層を同時に硬化する硬化ステップをさらに含む、請求項４に記載の製造方法。   In the second sealing layer forming step, the first sealing layer and the second sealing layer are in an uncured state, and the first sealing layer is formed after the second sealing layer forming step. The manufacturing method according to claim 4, further comprising a curing step of simultaneously curing the stop layer and the second sealing layer. 前記第１の封止層及び前記第２の封止層が未硬化の状態において、前記第１の封止層の粘度は前記第２の封止層の粘度よりも大きい、請求項４又は５に記載の製造方法。 6. The viscosity of the first sealing layer is larger than the viscosity of the second sealing layer when the first sealing layer and the second sealing layer are uncured. The manufacturing method as described in. 前記第２の封止層には蛍光材が分散され、前記第２の封止層における該蛍光材の重量比が、前記第１の封止層における光拡散材の重量比より小さい、請求項４〜６のいずれか一項に記載の製造方法。   The fluorescent material is dispersed in the second sealing layer, and the weight ratio of the fluorescent material in the second sealing layer is smaller than the weight ratio of the light diffusing material in the first sealing layer. The manufacturing method as described in any one of 4-6.
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