JP2010226086A - 半導体発光素子の実装体の製造方法、発光装置の製造方法及び半導体発光素子 - Google Patents

半導体発光素子の実装体の製造方法、発光装置の製造方法及び半導体発光素子 Download PDF

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JP2010226086A
JP2010226086A JP2009263108A JP2009263108A JP2010226086A JP 2010226086 A JP2010226086 A JP 2010226086A JP 2009263108 A JP2009263108 A JP 2009263108A JP 2009263108 A JP2009263108 A JP 2009263108A JP 2010226086 A JP2010226086 A JP 2010226086A
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semiconductor light
light emitting
bump
electrode
forming material
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JP2009263108A
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JP5549190B2 (ja
Inventor
Satoshi Wada
聡 和田
Miki Moriyama
実希 守山
Koichi Goshonoo
浩一 五所野尾
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2009263108A priority Critical patent/JP5549190B2/ja
Priority to US12/659,073 priority patent/US8609444B2/en
Publication of JP2010226086A publication Critical patent/JP2010226086A/ja
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract

【課題】流動性のあるバンプ形成材料をバンプ形成対象面へ塗布し、これを乾燥・焼成してバンプを形成すると、その表面がメニスカス形状となる。その結果、バンプと半導体発光素子及び基板との接合箇所にムラが生じ、その結果、接合面積が不十分となり、接合強度が不足し、また半導体発光素子の放熱特性も低下するおそれがある。
【解決手段】半導体発光素子の電極へ金属粒子を分散したペースト状のバンプ形成材料を島状に積層して複数のバンプ形成材料塊を形成する。ここに、バンプ形成材料塊はその上面と下面で面積が異なり、かつその上面が実質的に平坦となるように形成される。次にこのバンプ形成材料塊を熱処理して固形のバンプとし、半導体発光素子の電極と基板とをバンプを介して固定する。
【選択図】図４

Description

本発明は半導体発光素子を基板へ固定するためのバンプの改良に関する。
一対の電極をマウントした表面を基板へ対向して配置するいわゆるフリップチップ型発光素子を基板へ実装する場合、一般的には当該発光素子の電極の表面へバンプを積層し、このバンプを介して発光素子と基板とを結合する。ここに、バンプの形成方法として（１）電気メッキ、（２）スパッタ、（３）スタッドバンプなどが知られている。
しかしながら、これらの方法においては、それぞれ（１）通電が不可欠であるため発光素子に損傷が生じるおそれがある、（２）積層速度が遅く製品製造のスループット低下の原因となる、（３）各々のバンプを個々に形成しなければならないので、同じくスループット低下の原因となる、という課題がある。
これを回避するため、金属粒子含有ペースト材１（この明細書では「バンプ形成材料」と呼ぶ）を電極表面２の所定領域へスクリーン印刷し（図１Ａ参照）、これを熱処理及びレジストを除去して面状のバンプ５とする（図１Ｂ参照）。図１中の参照番号３はレジストである。
本件発明に関連する技術を開示する文献として特許文献１及び２を参照されたい。
特開２００７−１９１４４号公報 特開２００８−２２６８６４号公報
本発明者らは、上記バンプ形成材料を用いて半導体発光素子を基板へ固定することについて検討してきたところ、下記の課題に気がついた。
バンプ形成材料１はペースト状又はスラリー状で流動性があるため、半導体発光素子の電極表面２上へスクリーン印刷したとき、図１Ａに示すように、表面張力が作用して表面にメニスカスが生じ、中央部分に凹部が形成され、熱処理後もその形状は維持される（図１Ｂ）。かかるバンプ５を介在させて半導体発光素子と基板とホットプレスしたとき、接合加重がバンプ５へ均等にかからず凸部のみに荷重が集中してこれが無秩序に変形し、接合箇所にムラが発生するおそれがある。その結果、接合面積が不十分となり、接合強度が不足し、また半導体発光素子の放熱特性も低下するおそれがある。これはバンプ径が大きく、バンプ高さが小さい程、問題となる。
この発明の第１の局面は上記課題に鑑みてなされたものである。即ち、
半導体発光素子の電極表面及び／又は基板の電極対向面へ金属粒子を分散したペースト状のバンプ形成材料を島状に積層して複数のバンプ形成材料塊を形成するステップであって、前記バンプ形成材料塊はその上面と下面で面積が異なり、かつその上面が実質的に平坦となるように形成されるバンプ形成材料塊形成ステップと、
前記バンプ形成材料塊を熱処理して固形のバンプとする熱処理ステップと、
前記半導体発光素子と前記基板とを前記バンプを介して固定する固定ステップと、
を含んでいる半導体発光素子の実装体の製造方法である。
上記の方法によれば、バンプ形成材料塊を島状として、個々のバンプ径を小さくし、その上面面積と下面面積とを異ならしめ、かつその上面が実質的に平坦としたので、当該バンプを介在させて半導体発光素子と基板とをホットプレスすると、上面と下面とにおいてその面積の小さい方に加重が集中する。このとき、バンプ上面は実質的に平坦であるため、加重が均等にかかり、小面積部位の変形を何ら阻害することはない。ここで、「実質的に平坦」とは、バンプの上面の凹凸が少なくともホットプレスによるバンプ高さの変形量以下であることを示す。
バンプにおいて小面積部位へ加重が集中するとその部位からバンプは全方向へ向けて均等に変形する。その結果、半導体発光素子と基板とに対して充分なバンプ接合面積を得られる。変形したバンプは相互に連結することがある（第５の局面参照）。相互にバンプを連結することにより、熱伝導が良好になる。
バンプの形状は高さ方向（バンプの下面から上面に向かう方向）において、その幅が漸減又は漸増する形状であっても良いし、高さ方向においてその幅が漸減する領域とその幅が漸増する領域とを備える形状であっても良い。なお、バンプの形状は円錐台形状若しくは断面台形の帯状など垂直断面の形状を台形形状とすることが好ましい（第６の局面参照）。
この発明の第２の局面は次のように規定される。即ち、第１の局面で規定の製造方法において、前記バンプ形成材料塊を形成するステップは、前記半導体発光素子の電極表面及び／又は前記基板の電極対向面へマスクを形成し、該マスクはその厚み方向のテーパー面を有する開口部を備え、該開口部へ前記バンプ形成材料を充填する。
第２の局面に規定の方法によれば、マスクを用いてバンプ形成材料塊を付形するので、バンプ形成材料塊の形状が安定し、またバンプ形成材料塊を形成するステップを安価かつ高速に行える。
この発明の第３の局面は次のように規定される。即ち、第２の局面で規定の製造方法において、前記マスクはレジスト材料からなり、前記マスクの開口部へ前記バンプ形成材料を充填する。第３の局面に規定の方法によれば、マスクの除去が容易となり、バンプ形成材料塊を形成するステップを円滑に実行することができる。
この発明の第４の局面は次のように規定される。即ち、第３の局面で規定の製造方法において、前記バンプ形成材料が前記マスクの上面からスクリーン印刷して該マスクの開口部へ前記バンプ形成材料を充填される。
第４の局面に規定の方法によれば、バンプ形成材料塊を形成するステップを更に円滑に実行することができ、ひいては半導体発光素子を基板へ固定する方法のスループットが向上する。
この発明の第７の局面は次のように規定される。即ち、第１〜第６の局面に記載の製造方法に加えて、ホットプレスにより熱可塑性封止材により前記半導体発光素子を封止する封止ステップが加えられる。この方法によれば、半導体発光素子を基板に配列し、封止ステップにおけるホットプレスにより、半導体発光素子と基板の接合と、熱可塑性封止材による封止を同時に行うことが可能であり、スループットが向上する。
さらにこの発明の第８の局面では、熱可塑性封止材として低融点ガラスを選択する。
この発明の第１１の局面は、半導体発光素子の電極表面及び／又は基板の電極対向面へ金属粒子を分散したペースト状のバンプ形成材料を島状に積層して複数のバンプ形成材料塊を形成するステップであって、前記バンプ形成材料塊はその高さ方向においてその幅が変化するように形成されるバンプ形成材料塊形成ステップと、バンプ形成材料塊を熱処理して固形のバンプとする熱処理ステップと、半導体発光素子と基板とを前記バンプを介して固定する固定ステップと、を含んでいる半導体発光素子の実装体の製造方法である。
この発明の第１１の局面によれば、バンプ形成材料塊はその高さ方向においてその幅が変化するように形成されるため、形成されたバンプはその幅の狭い部分に加重が集中し、そこからバンプが全方向へ向けて変形する。その結果、半導体発光素子と基板とに対して充分なバンプ接合面積を得られる。変形したバンプは相互に連結することがある（第５の局面参照）。相互にバンプを連結することにより、熱伝導が良好になる。
さらにこの発明の第１２の局面に記載の発明は、バンプ形成材料塊はその高さ方向において、バンプ形成材料塊が積層される面から離れるにつれて、その幅が漸減するように形成される。これによりバンプは傾斜する側面を備えることとなる。バンプ形成材料塊をこのような形状とすることにより、成型が容易となってスループットが向上する。
図１は従来のバンプ形成材料の特性を示す断面図である。 図２は半導体発光素子の電極表面へドット状に形成されたバンプを示す平面図である。 図３は半導体発光素子の電極表面へ帯状に形成されたバンプを示す平面図である。 図４は実施例１のバンプの製造工程を示す模式図である。 図５は実施例１のバンプによる半導体発光素子と基板との接合工程を示す模式図である。 図６（Ａ）は実施例２の半導体発光素子の電極表面へドット状に形成されたバンプを示す平面図であり、図６（Ｂ）は同斜視拡大図であり、図６（Ｃ）に同側面図である。 図７はバンプ形成材料塊３９０の形成工程を示す模式図である。 図８は実施例２の変形例である、半導体発光素子の電極表面へドット状及び帯状に形成されたバンプを示す平面図である。 図９は本発明の実施例３におけるバンプ形成材料塊５００の形成工程を示す模式図である。
上記において半導体発光素子には、絶縁性の成長基板の上にＰ層及びＮ層を形成して、片面側にｐ電極及びｎ電極を有するいわゆるフリップチップタイプのIII族窒化物系化合物半導体発光素子を適用することができる。また、導電性の基板の一方の面にｐ電極を有し、他方の面にｎ電極を有するIII族窒化物系化合物半導体発光素子を適用してもよい。
III族窒化物系化合物半導体素子とは、III族窒化物系化合物半導体からなる発光層を有する発光素子をいう。ここで、III族窒化物系化合物半導体とは、一般式としてＡｌＸＧａＹＩｎ１−Ｘ−ＹＮ（０≦Ｘ≦１、０≦Ｙ≦１、０≦Ｘ＋Ｙ≦１）の四元系で表され、ＡｌＮ、ＧａＮ及びＩｎＮのいわゆる２元系、ＡｌｘＧａ１−ｘＮ、ＡｌｘＩｎ１−ｘＮ及びＧａｘＩｎ１−ｘＮ（以上において０＜ｘ＜１）のいわゆる３元系を包含する。III族元素の少なくとも一部をボロン（Ｂ）、タリウム（Ｔｌ）等で置換しても良く、また、窒素（Ｎ）の少なくとも一部もリン（Ｐ）、ヒ素（Ａｓ）、アンチモン（Ｓｂ）、ビスマス（Ｂｉ）等で置換できる。III族窒化物系化合物半導体層は任意のドーパントを含むものであっても良い。ｎ型不純物として、Ｓｉ、Ｇｅ、Ｓｅ、Ｔｅ、Ｃ等を用いることができる。ｐ型不純物として、Ｍｇ、Ｚｎ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａ等を用いることができる。なお、結晶成長基板には、サファイア（Ａｌ２Ｏ３）、ガリウムナイトライド（ＧａＮ）、炭化ケイ素（ＳｉＣ）、シリコン（Ｓｉ）などを用いることができる。
III族窒化物系化合物半導体層は、周知の有機金属気相成長法（ＭＯＣＶＤ法）、分子線結晶成長法（ＭＢＥ法）、ハライド系気相成長法（ＨＶＰＥ法）、スパッタ法、イオンプレーティング法、電子シャワー法等によって形成することができる。
なお、ｐ型不純物をドープした後にIII族窒化物系化合物半導体を電子線照射、プラズマ照射若しくは炉による加熱にさらすことも可能であるが必須ではない。
発光素子はかかるIII族窒化物系化合物半導体を積層して構成される。発光のための層構成として量子井戸構造（多重量子井戸構造若しくは単一量子井戸構造）を採用することができる。そのほか、シングルへテロ型、ダブルへテロ型、ホモ接合型を採用することもできる。
フリップチップタイプの発光素子は光取り出し面を基板側とするので、ｐ電極及びｎ電極を形成した発光素子上面と基板の配線部とをバンプによって固定する。このバンプには導電性、熱伝導性及び発光素子と基板とを強固に連結する機械的強度が要求される。
バンプは半導体発光素子の電極表面、及び／又は基板の電極対向面に形成される。より具体的には発光素子のｐ電極及びｎ電極、及び／又は基板の配線パッドに形成される。
バンプは島状であって隣のバンプとの間に空間が形成される。バンプの島形状はドット状（バンプ１１）であっても（図２参照）、帯状（バンプ１３）であってもよい（図３参照）。バンプは半導体発光素子の電極（ｐ電極１５、ｎ電極１７）上及び／又は基板の配線パッド上において均等に分配させて配置されることが好ましいが、不均等な配置や、自由曲線で囲まれた形状にすることも可能である。
本発明の第１の局面ではバンプはその上面と下面とで面積が異なるものとする。その結果、ホットプレス時にバンプの小面積部分に応力が集中してそこから変形が始まる。接触部に応力集中させることで、より接合しやすくなる。全てのバンプの形状を同一とすると、各バンプが当該小面積部分より同様に変形することとなり、半導体発光素子と基板との間にバンプが均等に充填される。換言すれば半導体発光素子と基板との接合面におけるバンプの密度が均等になる。バンプの形状、半導体発光素子、基板の形状及び変形を考慮して、意図的にバンプ形状や配置に分布をもたせてもよい。
バンプの大きさ及びそのピッチ（換言すれば、バンプ間の空間の大きさ）は任意に設定できるものであるが、ホットプレス時に変形が予想されるバンプの体積がバンプ間の空間の容積と実質的に等しいものとすることが好ましい。これにより、半導体発光素子及び基板の各全面へバンプが結合し、両者を強固に固定する。
バンプはバンプ形成材料塊を熱処理して得られる。バンプ形成材料は流動性を有するので、その表面が大きくなると図１Ａに示したようにメニスカスが生じてしまう。そこでこの発明では、バンプの上面はメニスカスが生じない程度の面積を有する。よって、バンプはその上面側を小面積とし、下面側を大面積とすることが好ましい。メニスカスの発生を実質的に予防するには、バンプ上面が円形とき（ドット状のバンプ）、その直径を３〜７μｍとし、バンプの上面が長方形のとき（帯状のバンプ）、その短手方向の幅を３〜７μｍとする。
流動性を有するバンプ形成材料塊を例えば円錐台形に付形するため、マスクを用いることが好ましい。このマスクの開口部の周壁がバンプ形成材料塊の外周面を規定する。マスクを用いることにより、当該開口部の形状および形成密度を任意に設計できる。
マスクの材料は任意に選択できる。テーパーのついたマスクを容易に形成できるレジストを採用することが好ましい。例えば、金属フィルムやレジストを採用することができる。
マスクの代わりに、ポッティングやインクジェット方式によりバンプ形成材料塊を形成してもよい。
バンプ形成材料には金属粒子を有機溶剤中に分散してなるスラリーを用いることができる。金属粒子には、金、銀、白金、又はパラジウムの単体若しくはそれら２以上の混合物を用いることができる。
有機溶剤にはアルコール類を用いることができる。例えば、エステルアルコール、ターピネオール、パインオイル、ブチルカルビトールアセテート、ブチルカルビトール、カルビトールを挙げることができる。好ましいエステルアルコール系の有機溶剤として、２，２，４−トリメチル−３−ヒドロキシペンタイソブチレート（Ｃ１２Ｈ２４Ｏ３）がある。
金属粒子を分散させる目的で有機溶剤にポリマーを添加してもよい。ポリマーとしてメタクリル酸メチル重合体等のアクリル系樹脂、エチルセルロース等のセルロース系樹脂、無水フタル酸樹脂等のアルキッド樹脂等を挙げることができる。
また、熱可塑性樹脂中に、金属粒子を含有させてもよい。熱可塑性樹脂としては、例えば、オレフィン系樹脂、ハロゲン含有ビニル系樹脂（例えば、ポリ塩化ビニル，フッ化樹脂、等）、アクリル系樹脂、スチレン系樹脂、ポリカーボネート系樹脂、ポリエステル系樹脂、ポリエステル系樹脂（ポリエチレンテレフタレート、ポリブチレンテレフタレート、等）、ポリアセタール系樹脂、ポリアミド系樹脂、ポリフェニレンスルフィド系樹脂、ポリイミド系樹脂、ポリエーテルケトン系樹脂、熱可塑性エラストマ、等が挙げられる。熱可塑性樹脂は、単独又は２種以上を組み合わせて使用してもよい。
バンプ形成材料塊の熱処理はバンプ形成塊から有機溶剤を除去するとともに金属粒子の結合を図ることを目的とし、その条件はバンプ形成材料の材質やその塊の大きさに応じて適宜選択できる。
導電性の基板の一方の面にｐ電極を有し、他方の面にｎ電極を有するIII族窒化物系化合物半導体発光素子を使用する場合、ｐ型電極又はｎ型電極の表面のいずれか一方にバンプを形成し、当該バンプ形成面を配線基板と対向させてホットプレスすることができる。また、配線基板側にバンプを形成して当該発光素子をホットプレスしても良い。
本発明の第１１の局面では、バンプはその高さ方向においてその幅が変化するように形成される。バンプ形成材料塊をこのように形成する方法は、上述のスクリーン印刷を利用する方法の他に、ドット印刷、ディスペンサーによる転写、ニードル塗布、凸版印刷、グラビア印刷、オフセット印刷、インクジェット印刷、ナノインプリントなどが挙げられる。バンプ形成材料及びバンプ形成材料塊の熱処理方法（仮焼成）は第１の局面と同様とすることができる。なお、バンプが形成される半導体素子の実装条件によっては、仮焼成を省略することもできる。
以下、この発明の実施例１について図例を参照しながら説明する。
半導体発光素子の電極３１の表面へレジスト材３３を一様に塗布し、ドット状の穴（丸穴）３４を均等に形成する。この穴３４は、図４（１）に示すように、断面三角台形（即ちレジスト材３３の内面は逆テーパ面となる）とすることが好ましい。レジスト材としてネガレジストを用いた。
次に、ペースト状のバンプ形成材料３５を塗布し、バンプ形成材料３５でレジスト材３３の穴３４を充填するとともに、レジスト材３３表面のバンプ形成材料３５をスキージ３７で除去する（図４（２））。バンプ形成材料として金微粒子含有スラリーを用いた。
次に、バンプ形成材料３５を、その後、２３０℃３０分の条件でバンプ形成材料３５を焼成する（図４（３））。これによりバンプ形成材料３５中の金属粒子が相互に結合し、バンプが多数の間隙が存在する状態で固体化する。次に、レジスト３３を除去し、図４（４）に示すように電極３１の表面へ円錐台形のバンプ３９がドット状に形成される。
なお、このバンプ３９の形状は高さが２μｍ、底面の直径が３μｍ、上面の直径が１μｍであって、ピッチ（中心線間の距離）が５μｍである。
このようにしてバンプ３９の形成された半導体発光素子はその電極３１を配線基板４０へ向けて当て付けられる（図５（１）及び（２））。この配線基板４０は基体４１の上に実装されている。その後、２３０℃の条件でホットプレスしてバンプ３９を変形する。このとき、バンプ３９が円錐台形であるため、その小面積部分へ応力が集中してまずこの部位から変形が始まる。バンプ３９の形状を同一とすることによりバンプの変形が一様となり、電極３１と配線基板４０との間に隙間無くバンプを充填することができる（図５（４）、（５））。
これにより、半導体発光素子の電極３１と配線基板４０との間に安定かつ充分な接合強度が得られ、かつ半導体発光素子からの放熱特性も充分なものとなる。また、レジスト材を使用する本実施例の方法によれば、大面積に対してバンプを形成することが容易となる。
本発明の実施例２について図面を参照しながら以下に説明する。実施例２では、ニードル塗布によって半導体発光素子の電極３１の表面へバンプ形成材料塊３９０を形成する。図６（Ａ）にバンプ形成時の電極（ｐ電極１５、ｎ電極１７）の表面の図を示す。図６（Ｂ）にバンプ形成材料塊３９０の斜視拡大図を、図６（Ｃ）に側面図をそれぞれ示す。図６（Ａ）に示すように、バンプ形成材料塊３９０は各電極１５、１７の表面にドット状に形成される。バンプ形成材料塊３９０の形成には、例えば、ニードル式ディスペンサー１００（株式会社アプライドマイクロシステム社製）を使用することができる。図７（Ａ）〜（Ｅ）に当該装置１００を使用してバンプ形成材料塊３９０形成する際の模式図を示す。図７（Ａ）に示すように、当該装置１００はガラス管１０１、その内部に設けられるタングステン針１０２とを備える。ガラス管１０１の先端の開口部にはバンプ形成材料３９１が表面張力によって保持されている。
バンプ形成材料塊３９０は次のように形成する。まず、ガラス管１０１を電極１５上の所定位置にセットし、タングステン製の針１０２を降下して先端に保持されたバンプ形成材料３９１を通過させる（図７（Ｂ）参照）。これにより、針１０２の先端にバンプ形成材料３９２が付着した状態となる。そして、バンプ形成材料塊３９２が電極１５の表面に接するまで、針１０２をさらに降下する（図７（Ｃ）参照）。その後、針１０２を引き上げる（図７（Ｄ））。これにより、バンプ形成材料３９２が電極１５の表面に転写されて、バンプ形成材料塊３９０が形成される（図７（Ｅ））。このように形成されるバンプ形成材料塊３９０の形状は、高さ方向において、電極１５の表面から離れるにつれて幅が漸減する形状となり、その側面は傾斜することとなる。バンプ形成材料塊３９０は高さ約５０μｍ、底面の直径約５０μｍであって、同一形状のバンプ形成材料塊３９０が約５μｍのピッチ（中心線間の距離）で電極１５及び電極１７の表面に形成される。
バンプ形成材料塊３９０によれば、バンプ形成材料塊３９０が高さ方向に幅が小さくなっているため、実施例１と同様にホットプレスすると当該幅の小さい部分へ応力が集中し、まずこの部位から変形が始まる。そしてバンプ３９の形状が同一であるためバンプ形成材料塊３９０は一様に変形し、電極１５、１７と配線基板との間に隙間無くバンプを充填される。これにより、半導体発光素子の電極１５、１７と配線基板との間に安定かつ充分な接合強度が得られ、かつ半導体発光素子からの放熱特性も充分なものとなる。また、微少液滴塗布装置１００を使用することにより、レジスト材を使用する場合に比べて作業工程を低減できる。
上記実施例において、バンプ形成材料塊３９０は半導体発光素子のｎ電極１５及びｐ電極１７の表面にドット状に配列して形成したが、図８に示すように、半導体発光素子のｐ電極１７の表面にバンプ形成材料塊３９３を帯状に形成しても良い。帯状のバンプ形成材料塊３９０は、例えば、バンプ形成材料塊３９０が形成される帯状の長手方向において、バンプ形成材料塊３９２が連結するように、微少液滴塗布装置１００によるバンプ形成材料３９１の転写のピッチを小さくすることにより、形成することができる。
本発明の実施例３について図面を参照しながら以下に説明する。図８に実施例３におけるにバンプ形成材料塊５００時の電極（ｐ電極１５、ｎ電極１７）の表面の図を示す。バンプ形成材料塊５００は、例えば、エアパルス式ディスペンサー（武蔵エンジニアリング株式会社社製）により半導体発光素子の電極１５、１７の表面へ形成することができる。図９（Ａ）〜（Ｄ）に当該ディスペンサー５１０によるバンプ形成材料塊５００形成の模式図を示す。図９（Ａ）に示すように、当該装置５１０はシリンジ（図示せず）の先端にノズル５１１を備える。ノズル５１１は先端の開口部が円形であり、その内径は約５０μｍ、外径は約８０μｍである。ノズル５１１内にはバンプ形成材料３９１が充填され、その先端開口部からバンプ形成材料３９１が吐出される。
バンプ形成材料塊５００は次のように形成できる。まず、ノズル５１１を電極１５上の所定位置にセットし、ノズル５１１の先端開口部からバンプ形成材料３９１を吐出して（図９（Ｂ）参照）バンプ形成材料３９１を電極１５の表面に接触させる（図９（Ｃ）参照）。その後、ノズル５１１を引き上げ（図９（Ｄ））、バンプ形成材料３９１を電極１５の表面に転写して、バンプ形成材料塊５００を形成する。なお、バンプ形成材料３９１の吐出条件は吐出圧２００ｋＰａ、吐出時間０．０３秒としたが、バンプ形成材料３９１の粘度等を考慮して適宜決定してよい。
バンプ形成材料塊５００の形成後、仮焼成を行う。仮焼成の条件は温度２００℃、時間１０分である。仮焼成により、バンプ形成材料塊５００内の溶剤が揮発してバンプ形成材料塊５００内の金属粒子が間隙の多い状態で結合（即ち、略結合）するとともに、電極１５にも略結合する。これにより、バンプ形成材料塊５００が電極１５に固定されるとともに、バンプ形成材料塊５００の変形が容易となる。
形成材料塊５００の形状は、高さ方向において、電極１５の表面から離れるにつれて幅が漸減する形状となり、その側面は傾斜することとなる。バンプ形成材料塊５００は高さ約５０μｍ、底面の直径約５０μｍである。バンプ形成材料塊５００はバンプ形成材料塊３９０と同様に約５μｍのピッチ（中心線間の距離）で電極１５及び電極１７の表面に形成される。
実施例３では円形の開口部を有するノズル５１１を備えるディスペンサー５１０を例示したが、これに限定されず、矩形の開口部を有するノズルを備えるディスペンサーを使用してもよい。矩形の開口部を有するノズルを使用することにより、底部が矩形のバンプ形成材料塊を形成して、底部が円形のバンプ形成材料塊よりもさらに密に実装することができる。また、実施例３では開口部の内径が５０μｍのノズル５１１を使用することを例示したが、開口部の内径がさらに小さいノズルを使用することができる。例えば、開口部の内径が約２０μｍのノズルを使用する。これにより、底部が約２０μｍの円形のバンプ形成材料塊を形成することができ、当該バンプ形成材料塊を一層密に形成することができる。
この発明は、上記発明の実施の形態及び実施例の説明に何ら限定されるものではない。特許請求の範囲の記載を逸脱せず、当業者が容易に想到できる範囲で種々の変形態様もこの発明に含まれる。
１，３５、３９１、３９２ バンプ形成材料
２，１５，１７，３１ 電極
３，３３ レジスト
３９ バンプ
３９０、３９３、５００ バンプ形成材料塊
４０，４１ 基板

Claims (12)

  1. 半導体発光素子の電極表面及び／又は基板の電極対向面へ金属粒子を分散したペースト状のバンプ形成材料を島状に積層して複数のバンプ形成材料塊を形成するステップであって、前記バンプ形成材料塊はその上面と下面で面積が異なり、かつその上面が実質的に平坦となるように形成されるバンプ形成材料塊形成ステップと、
    前記バンプ形成材料塊を熱処理して固形のバンプとする熱処理ステップと、
    前記半導体発光素子と前記基板とを前記バンプを介して固定する固定ステップと、
    を含んでいる半導体発光素子の実装体の製造方法。
  2. 前記バンプ形成材料塊を形成するステップは、前記半導体発光素子の電極表面及び／又は前記基板の電極対向面へマスクを形成し、該マスクはその厚み方向のテーパ面を有する開口部を備え、該開口部へ前記バンプ形成材料を充填する、請求項１に記載の製造方法。
  3. 前記マスクはレジスト材料からなり、前記マスクの開口部へ前記バンプ形成材料を充填する、請求項２に記載の製造方法。
  4. 前記バンプ形成材料は前記マスクの上面からスクリーン印刷して充填される、請求項３に記載の製造方法。
  5. 前記固定ステップにおいて前記バンプが変形して相互に連結する、請求項１〜４のいずれかに記載の製造方法。
  6. 前記バンプは円錐台形状であり、前記半導体発光素子の電極表面へ均等に分配されている、請求項１〜５のいずれかに記載の製造方法。
  7. 請求項１〜６に記載の半導体発光素子を基板へ固定する方法に加えて、ホットプレスにより熱可塑性封止材により前記半導体発光素子を封止する封止ステップを備えてなる発光装置の製造方法。
  8. 前記熱可塑性封止材は低融点ガラスである、請求項７に記載の製造方法。
  9. 片面側にｐ電極及びｎ電極を有する半導体発光素子であって、前記ｐ電極及びｎ電極の表面に複数の島状のバンプが均等に分散され、該バンプはその上面と下面で面積が異なり、かつその上面が実質的に平坦となるように形成される半導体発光素子。
  10. 一方の面にｐ電極を有し、他方の面にｎ電極を有する半導体発光素子であって、前記ｐ電極又はｎ電極の表面のいずれか一方に複数の島状のバンプが均等に分散され、該バンプはその上面と下面で面積が異なり、かつその上面が実質的に平坦となるように形成される半導体発光素子。
  11. 半導体発光素子の電極表面及び／又は基板の電極対向面へ金属粒子を分散したペースト状のバンプ形成材料を島状に積層して複数のバンプ形成材料塊を形成するステップであって、前記バンプ形成材料塊はその高さ方向においてその幅が変化するように形成されるバンプ形成材料塊形成ステップと、
    前記バンプ形成材料塊を熱処理して固形のバンプとする熱処理ステップと、
    前記半導体発光素子と前記基板とを前記バンプを介して固定する固定ステップと、
    を含んでいる半導体発光素子の実装体の製造方法。
  12. 前記バンプ形成材料塊はその高さ方向において、前記バンプ形成材料塊が積層される前記半導体発光素子の電極表面及び／又は前記基板の電極対向面から離れるにつれて、その幅が漸減するように形成される、請求項１１に記載の半導体発光素子の実装体の製造方法。
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