JP2010225780A5 - - Google Patents

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Publication number
JP2010225780A5
JP2010225780A5 JP2009070505A JP2009070505A JP2010225780A5 JP 2010225780 A5 JP2010225780 A5 JP 2010225780A5 JP 2009070505 A JP2009070505 A JP 2009070505A JP 2009070505 A JP2009070505 A JP 2009070505A JP 2010225780 A5 JP2010225780 A5 JP 2010225780A5
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JP
Japan
Prior art keywords
ohmic contact
contact layer
thin film
film transistor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009070505A
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English (en)
Japanese (ja)
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JP2010225780A (ja
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Publication date
Application filed filed Critical
Priority to JP2009070505A priority Critical patent/JP2010225780A/ja
Priority claimed from JP2009070505A external-priority patent/JP2010225780A/ja
Publication of JP2010225780A publication Critical patent/JP2010225780A/ja
Publication of JP2010225780A5 publication Critical patent/JP2010225780A5/ja
Pending legal-status Critical Current

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JP2009070505A 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法 Pending JP2010225780A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009070505A JP2010225780A (ja) 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009070505A JP2010225780A (ja) 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JP2010225780A JP2010225780A (ja) 2010-10-07
JP2010225780A5 true JP2010225780A5 (enExample) 2011-11-17

Family

ID=43042672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009070505A Pending JP2010225780A (ja) 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP2010225780A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120298999A1 (en) * 2011-05-24 2012-11-29 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof
CN105405892B (zh) * 2015-12-14 2019-02-12 深圳市华星光电技术有限公司 一种薄膜晶体管及阵列基板
CN110870078A (zh) * 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
CN110870077A (zh) * 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH1197706A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001217424A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびそれを用いた液晶表示装置
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置

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