JP2010225780A - 薄膜トランジスタ及び薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタ及び薄膜トランジスタの製造方法 Download PDF

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Publication number
JP2010225780A
JP2010225780A JP2009070505A JP2009070505A JP2010225780A JP 2010225780 A JP2010225780 A JP 2010225780A JP 2009070505 A JP2009070505 A JP 2009070505A JP 2009070505 A JP2009070505 A JP 2009070505A JP 2010225780 A JP2010225780 A JP 2010225780A
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Japan
Prior art keywords
ohmic contact
layer
contact layer
thin film
film transistor
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Pending
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JP2009070505A
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Japanese (ja)
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JP2010225780A5 (enExample
Inventor
Kunihiro Matsuda
邦宏 松田
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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Priority to JP2009070505A priority Critical patent/JP2010225780A/ja
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Publication of JP2010225780A5 publication Critical patent/JP2010225780A5/ja
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JP2009070505A 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法 Pending JP2010225780A (ja)

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JP2009070505A JP2010225780A (ja) 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法

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JP2009070505A JP2010225780A (ja) 2009-03-23 2009-03-23 薄膜トランジスタ及び薄膜トランジスタの製造方法

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JP2010225780A true JP2010225780A (ja) 2010-10-07
JP2010225780A5 JP2010225780A5 (enExample) 2011-11-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008956A (ja) * 2011-05-24 2013-01-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2017101175A1 (zh) * 2015-12-14 2017-06-22 深圳市华星光电技术有限公司 一种薄膜晶体管及阵列基板
WO2019012630A1 (ja) * 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法
WO2019012631A1 (ja) * 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH1197706A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001217424A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびそれを用いた液晶表示装置
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH1197706A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001217424A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびそれを用いた液晶表示装置
JP2008258345A (ja) * 2007-04-04 2008-10-23 Sony Corp 薄膜トランジスタおよびその製造方法ならびに表示装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008956A (ja) * 2011-05-24 2013-01-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2017101175A1 (zh) * 2015-12-14 2017-06-22 深圳市华星光电技术有限公司 一种薄膜晶体管及阵列基板
WO2019012630A1 (ja) * 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法
WO2019012631A1 (ja) * 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法
CN110870077A (zh) * 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
US11121262B2 (en) 2017-07-12 2021-09-14 Sakai Display Products Corporation Semiconductor device including thin film transistor and method for manufacturing the same

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