JP2010225780A5 - - Google Patents
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- JP2010225780A5 JP2010225780A5 JP2009070505A JP2009070505A JP2010225780A5 JP 2010225780 A5 JP2010225780 A5 JP 2010225780A5 JP 2009070505 A JP2009070505 A JP 2009070505A JP 2009070505 A JP2009070505 A JP 2009070505A JP 2010225780 A5 JP2010225780 A5 JP 2010225780A5
- Authority
- JP
- Japan
- Prior art keywords
- ohmic contact
- contact layer
- thin film
- film transistor
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Claims (7)
前記半導体層上に設けられたドレイン電極と、
前記半導体層上に設けられたソース電極と、
前記半導体層と、前記ドレイン電極及び前記ソース電極との間に、それぞれ設けられたオーミックコンタクト層と、を備え、
前記オーミックコンタクト層は、前記半導体層の一部の領域上に直接設けられた第１のオーミックコンタクト層と、該第１のオーミックコンタクト層上に設けられた第２のオーミックコンタクト層と、を備え、
前記第１のオーミックコンタクト層の不純物濃度は、前記第２のオーミックコンタクト層の不純物濃度より低く、前記第１のオーミックコンタクト層の膜厚は、前記第２のオーミックコンタクト層の膜厚より厚いことを特徴とする薄膜トランジスタ。 A semiconductor layer formed from microcrystalline silicon;
A drain electrode provided on the semiconductor layer;
A source electrode provided on the semiconductor layer;
An ohmic contact layer provided between the semiconductor layer and the drain electrode and the source electrode, respectively,
The ohmic contact layer includes a first ohmic contact layer provided directly on a partial region of the semiconductor layer, and a second ohmic contact layer provided on the first ohmic contact layer. ,
The impurity concentration of the first ohmic contact layer, the second rather low than the impurity concentration of the ohmic contact layer, the thickness of the first ohmic contact layer, thickness than the thickness of the second ohmic contact layer A thin film transistor characterized by that.
前記半導体層と、前記ドレイン電極及び前記ソース電極との間に、それぞれ第１のオーミックコンタクト層と、前記第１のオーミックコンタクト層上に前記第１のオーミックコンタクト層よりも不純物濃度が低い第２のオーミックコンタクト層と、を形成し、前記第１のオーミックコンタクト層を、前記第２のオーミックコンタクト層よりも厚く形成するオーミックコンタクト層形成工程と、
を備えることを特徴とする薄膜トランジスタの製造方法。 A method for manufacturing a thin film transistor, comprising: a semiconductor layer formed from microcrystalline silicon; a drain electrode formed on the semiconductor layer; and a source electrode formed on the semiconductor layer,
A first ohmic contact layer and a second impurity concentration lower than the first ohmic contact layer on the first ohmic contact layer between the semiconductor layer and the drain electrode and the source electrode, respectively. Forming an ohmic contact layer, and forming the first ohmic contact layer thicker than the second ohmic contact layer ;
A method for producing a thin film transistor, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009070505A JP2010225780A (en) | 2009-03-23 | 2009-03-23 | Thin film transistor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009070505A JP2010225780A (en) | 2009-03-23 | 2009-03-23 | Thin film transistor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010225780A JP2010225780A (en) | 2010-10-07 |
| JP2010225780A5 true JP2010225780A5 (en) | 2011-11-17 |
Family
ID=43042672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009070505A Pending JP2010225780A (en) | 2009-03-23 | 2009-03-23 | Thin film transistor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010225780A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120298999A1 (en) * | 2011-05-24 | 2012-11-29 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
| CN105405892B (en) * | 2015-12-14 | 2019-02-12 | 深圳市华星光电技术有限公司 | A kind of thin film transistor (TFT) and array substrate |
| CN110870077A (en) * | 2017-07-12 | 2020-03-06 | 堺显示器制品株式会社 | Semiconductor device and method for manufacturing the same |
| US11081507B2 (en) * | 2017-07-12 | 2021-08-03 | Sakai Display Products Corporation | Semiconductor device and method for manufacturing same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256554A (en) * | 1997-03-13 | 1998-09-25 | Toshiba Corp | Thin film transistor and manufacture thereof |
| JPH1197706A (en) * | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture of the same |
| JP2001217424A (en) * | 2000-02-03 | 2001-08-10 | Matsushita Electric Ind Co Ltd | Thin film transistor and liquid crystal display using the same |
| JP2008258345A (en) * | 2007-04-04 | 2008-10-23 | Sony Corp | Thin film transistor, its manufacturing method, and display unit |
-
2009
- 2009-03-23 JP JP2009070505A patent/JP2010225780A/en active Pending
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