JP2010190636A - 加速度センサー - Google Patents
加速度センサー Download PDFInfo
- Publication number
- JP2010190636A JP2010190636A JP2009033605A JP2009033605A JP2010190636A JP 2010190636 A JP2010190636 A JP 2010190636A JP 2009033605 A JP2009033605 A JP 2009033605A JP 2009033605 A JP2009033605 A JP 2009033605A JP 2010190636 A JP2010190636 A JP 2010190636A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration sensor
- movable
- electrode
- gap
- damping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 76
- 238000013016 damping Methods 0.000 claims abstract description 70
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 230000005484 gravity Effects 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 10
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 31
- 238000005530 etching Methods 0.000 description 26
- 239000010410 layer Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009033605A JP2010190636A (ja) | 2009-02-17 | 2009-02-17 | 加速度センサー |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009033605A JP2010190636A (ja) | 2009-02-17 | 2009-02-17 | 加速度センサー |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010190636A true JP2010190636A (ja) | 2010-09-02 |
| JP2010190636A5 JP2010190636A5 (enrdf_load_stackoverflow) | 2012-03-08 |
Family
ID=42816845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009033605A Withdrawn JP2010190636A (ja) | 2009-02-17 | 2009-02-17 | 加速度センサー |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010190636A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014500502A (ja) * | 2010-12-07 | 2014-01-09 | ジョージア テック リサーチ コーポレーション | モード整合単一プルーフ・マス２軸ジャイロスコープおよび製作方法 |
| US8950259B2 (en) | 2010-05-26 | 2015-02-10 | Seiko Epson Corporation | Element structure, inertia sensor, and electronic device |
| US9739797B2 (en) | 2012-05-15 | 2017-08-22 | Denso Corporation | Sensor device |
| CN114088976A (zh) * | 2022-01-24 | 2022-02-25 | 成都华托微纳智能传感科技有限公司 | 一种梳齿间隙可调式mems加速度计 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06331649A (ja) * | 1993-05-18 | 1994-12-02 | Murata Mfg Co Ltd | 加速度センサおよびその製造方法 |
| JPH10206457A (ja) * | 1997-01-22 | 1998-08-07 | Hitachi Ltd | 静電容量式加速度センサ及びその製造方法 |
| JP2001133479A (ja) * | 2000-09-21 | 2001-05-18 | Mitsubishi Electric Corp | 慣性力センサおよびその製造方法 |
| JP2003519797A (ja) * | 2000-01-13 | 2003-06-24 | ビ−エイイ− システムズ パブリック リミテッド カンパニ− | 加速度計 |
| JP2003344445A (ja) * | 2002-05-24 | 2003-12-03 | Mitsubishi Electric Corp | 慣性力センサ |
| JP2004347475A (ja) * | 2003-05-22 | 2004-12-09 | Denso Corp | 容量式力学量センサ |
| JP2009168777A (ja) * | 2008-01-21 | 2009-07-30 | Hitachi Ltd | 慣性センサ |
-
2009
- 2009-02-17 JP JP2009033605A patent/JP2010190636A/ja not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06331649A (ja) * | 1993-05-18 | 1994-12-02 | Murata Mfg Co Ltd | 加速度センサおよびその製造方法 |
| JPH10206457A (ja) * | 1997-01-22 | 1998-08-07 | Hitachi Ltd | 静電容量式加速度センサ及びその製造方法 |
| JP2003519797A (ja) * | 2000-01-13 | 2003-06-24 | ビ−エイイ− システムズ パブリック リミテッド カンパニ− | 加速度計 |
| JP2001133479A (ja) * | 2000-09-21 | 2001-05-18 | Mitsubishi Electric Corp | 慣性力センサおよびその製造方法 |
| JP2003344445A (ja) * | 2002-05-24 | 2003-12-03 | Mitsubishi Electric Corp | 慣性力センサ |
| JP2004347475A (ja) * | 2003-05-22 | 2004-12-09 | Denso Corp | 容量式力学量センサ |
| JP2009168777A (ja) * | 2008-01-21 | 2009-07-30 | Hitachi Ltd | 慣性センサ |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8950259B2 (en) | 2010-05-26 | 2015-02-10 | Seiko Epson Corporation | Element structure, inertia sensor, and electronic device |
| JP2014500502A (ja) * | 2010-12-07 | 2014-01-09 | ジョージア テック リサーチ コーポレーション | モード整合単一プルーフ・マス２軸ジャイロスコープおよび製作方法 |
| US9739797B2 (en) | 2012-05-15 | 2017-08-22 | Denso Corporation | Sensor device |
| CN114088976A (zh) * | 2022-01-24 | 2022-02-25 | 成都华托微纳智能传感科技有限公司 | 一种梳齿间隙可调式mems加速度计 |
| CN114088976B (zh) * | 2022-01-24 | 2022-04-12 | 成都华托微纳智能传感科技有限公司 | 一种梳齿间隙可调式mems加速度计 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8573058B2 (en) | Acceleration sensor and electronic device | |
| CN100492016C (zh) | 微机械电容式加速度传感器及制作方法 | |
| Zhang et al. | A high-sensitive ultra-thin MEMS capacitive pressure sensor | |
| JP6211315B2 (ja) | ファブリペロー干渉フィルタ | |
| JP5516358B2 (ja) | ファブリペロー干渉計の製造方法 | |
| CN101858929A (zh) | 对称组合弹性梁结构电容式微加速度传感器及制作方法 | |
| CN104671186A (zh) | Mems器件 | |
| JP2010190636A (ja) | 加速度センサー | |
| KR101692717B1 (ko) | 정전용량형 멤스 마이크로폰 및 그 제조방법 | |
| CN101209812B (zh) | 电容式感测结构 | |
| JP5975457B2 (ja) | 三次元構造体及びセンサ | |
| US8991262B2 (en) | Capacitive pressure sensor, manufacturing method thereof, and pressure sensor package | |
| JP5321150B2 (ja) | 複合センサー | |
| JP2015068646A (ja) | 物理量センサおよびその製造方法 | |
| JP2009270961A (ja) | Ｍｅｍｓセンサおよびその製造方法 | |
| JP3405219B2 (ja) | 半導体加速度センサ素子及びその製造方法 | |
| JPH06163934A (ja) | 半導体加速度センサ及びその製造方法 | |
| US5824565A (en) | Method of fabricating a sensor | |
| JP2010032389A (ja) | 物理量センサ及びその製造方法 | |
| JP6860514B2 (ja) | Ｍｅｍｓ素子及びその製造方法 | |
| CN110352339B (zh) | 物理量传感器 | |
| JP2012008023A (ja) | 加速度センサ | |
| JP2020034290A (ja) | センサ、構造および電気機器 | |
| JP5401820B2 (ja) | センサ | |
| WO2014208043A1 (ja) | 物理量センサ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120125 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120125 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120919 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120925 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20121126 |