JP2010182476A - Heating element and heating device - Google Patents

Heating element and heating device Download PDF

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JP2010182476A
JP2010182476A JP2009023496A JP2009023496A JP2010182476A JP 2010182476 A JP2010182476 A JP 2010182476A JP 2009023496 A JP2009023496 A JP 2009023496A JP 2009023496 A JP2009023496 A JP 2009023496A JP 2010182476 A JP2010182476 A JP 2010182476A
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heating element
temperature
heating
microwaves
heat generating
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Hiroyuki Matsuo
裕之 松尾
Masahito Iguchi
真仁 井口
Motoyasu Sato
元泰 佐藤
Noboru Miyata
昇 宮田
Hironori Ishida
弘徳 石田
Motohiro Umetsu
基宏 梅津
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Taiheiyo Cement Corp
NTK Ceratec Co Ltd
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Nihon Ceratec Co Ltd
Taiheiyo Cement Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating element capable of being utilized at a suitable temperature range in view of purposes of use although with power saved, and a heating device using the heating element. <P>SOLUTION: The heating element 20 is made of one or a plurality of kinds of exothermic materials self-heating by being irradiated with microwaves. A specific temperature T0 as a temperature of the heating element 20 at the time when control modes change of irradiation strength of the microwaves on the hating element 20 is set in accordance with kinds of the exothermic materials, and weight ratios if need be. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明はマイクロ波が照射されることにより自己発熱する発熱体およびこれを用いた加熱装置に関する。   The present invention relates to a heating element that self-heats when irradiated with microwaves, and a heating device using the heating element.

陶磁器材料やファインセラミックス材料などで形成された被焼成体を焼成して焼成体を製造するためのマイクロ波焼成炉が提案されている。焼成室を構成する発熱体エレメントは高温域用発熱体および低温域用発熱体の２種類以上の発熱材から構成されている。高温域用発熱体はマイクロ波が照射されることにより主として焼成温度付近の高温域で自己発熱するムライト系材料、窒化珪素系材料またはアルミナ等により形成されている。一方、低温域用発熱体はマイクロ波が照射されることにより主として常温を含む低温域で自己発熱するマグネシア、ジルコニア、酸化鉄または炭化珪素等により形成されている（特許文献１参照）。   There has been proposed a microwave firing furnace for producing a fired body by firing a fired body formed of a ceramic material or a fine ceramic material. The heating element constituting the firing chamber is composed of two or more types of heating materials, a high temperature region heating element and a low temperature region heating element. The heating element for a high temperature region is formed of a mullite-based material, a silicon nitride-based material, alumina, or the like that mainly generates heat in a high-temperature region near the firing temperature when irradiated with microwaves. On the other hand, the heating element for a low temperature region is formed of magnesia, zirconia, iron oxide, silicon carbide, or the like that self-heats mainly in a low temperature region including normal temperature when irradiated with microwaves (see Patent Document 1).

特開２００４−２５７７２５号公報JP 2004-257725 A

しかし、被焼成体の焼成等の発熱体の利用目的の達成のため、発熱体に対するマイクロ波の照射強度を一様に高めることは、当該マイクロ波の照射のために要する電力節約の観点から好ましくない。   However, in order to achieve the purpose of using the heating element such as firing of the object to be fired, it is preferable from the viewpoint of saving power required for the microwave irradiation to uniformly increase the irradiation intensity of the microwave to the heating element. Absent.

そこで、本発明は、電力を節約しながらも利用目的に鑑みた適当な温度範囲で利用可能な発熱体および当該発熱体を用いた加熱装置を提供することを目的とする。   Therefore, an object of the present invention is to provide a heating element that can be used in an appropriate temperature range in consideration of the purpose of use while saving power, and a heating device using the heating element.

本願発明者は実験により次のような知見を得た。すなわち、自己発熱する発熱材からなる発熱体の温度には、マイクロ波の照射強度に鑑みて発熱体の自己発熱特性が変化する特異点（特異温度）が存在することが知見された。また、当該発熱材の種類等が適当に選定されることにより、特異温度の高低が調節可能であることが知見された。本発明はこれらの知見に鑑みて完成された。   The inventor of the present application has obtained the following knowledge through experiments. That is, it has been found that there is a singular point (singular temperature) at which the self-heating characteristics of the heating element change in the temperature of the heating element made of a heat-generating material that generates heat. Further, it has been found that the level of the specific temperature can be adjusted by appropriately selecting the type of the heat generating material. The present invention has been completed in view of these findings.

第１発明の発熱体は、マイクロ波が照射されることにより自己発熱する発熱材からなる発熱体であって、マイクロ波の照射強度に鑑みて前記発熱体の自己発熱特性が変化する際の前記発熱体の温度である特異温度が、前記発熱材の種類に応じて設定されていることを特徴とする。   A heating element according to a first aspect of the present invention is a heating element made of a heating material that self-heats when irradiated with microwaves, and the self-heating characteristic of the heating element changes when the microwave irradiation intensity is changed. A specific temperature that is a temperature of the heating element is set according to the type of the heating material.

第２発明の発熱体は、第１発明の発熱体において、マイクロ波が照射されることにより異なる温度域で自己発熱する２種類以上の発熱材からなり、前記発熱材の種類に加えて、前記発熱材のそれぞれの前記発熱体に対する重量比に応じて前記特異温度が設定されていることを特徴とする。   A heating element according to a second aspect of the present invention is the heating element according to the first aspect, comprising two or more types of heating materials that self-heat in different temperature ranges when irradiated with microwaves, in addition to the types of the heating materials, The specific temperature is set according to the weight ratio of each heat generating material to the heat generating element.

第３発明の発熱体は、第１または第２発明の発熱体において、前記発熱体の温度を上昇させる過程で前記発熱体に対するマイクロ波の照射強度の時間変化率が閾値を超えて低下する、または、当該マイクロ波の照射強度の時間変化率の正負が反転する際の前記発熱体の温度が前記特異温度として設定されていることを特徴とする。   In the heating element of the third invention, in the heating element of the first or second invention, in the process of increasing the temperature of the heating element, the rate of time change of the irradiation intensity of the microwave to the heating element decreases below a threshold value. Alternatively, the temperature of the heating element when the time change rate of the irradiation intensity of the microwave is reversed is set as the specific temperature.

第４発明の加熱装置は、第１〜第３発明のうちいずれか１つの発熱体と、マイクロ波を発振する発振器と、前記発振器への供給電力を制御することにより前記発熱体に照射されるマイクロ波のパワーを調節する制御装置とを備えている加熱装置であって、前記制御装置が、前記発熱体の温度が前記特異温度より低温である状態と、前記発熱体またはその周辺の温度が前記特異温度より高温である状態との別に応じて前記発振器への供給電力の制御態様を変化させることを特徴とする。   A heating device according to a fourth aspect of the invention irradiates the heating element by controlling any one of the heating elements of the first to third inventions, an oscillator that oscillates a microwave, and power supplied to the oscillator. A heating device comprising a control device for adjusting the power of the microwave, wherein the control device is configured such that the temperature of the heating element is lower than the singular temperature, and the temperature of the heating element or its surroundings. The control mode of the power supplied to the oscillator is changed depending on whether the temperature is higher than the singular temperature.

第５発明の加熱装置は、第４発明の加熱装置において、マイクロ波が前記発熱体に連続的に照射されている状態で、前記制御装置が前記第１状態における前記電力の変化率よりも、前記第２状態における前記電力の変化率が小さくなるように前記電力を制御することを特徴とする。   A heating device according to a fifth aspect of the present invention is the heating device according to the fourth aspect of the present invention, wherein the control device is more than the rate of change of the electric power in the first state when the microwave is continuously applied to the heating element. The power is controlled so that the rate of change of the power in the second state is small.

本発明の発熱体によれば、発熱体に対するマイクロ波の照射強度に鑑みて自己発熱効率が高い温度範囲において当該発熱体が利用されるように、発熱材の種類、または、発熱材の種類および重量比率に応じて特異温度が設定されうる。したがって、発熱体に対するマイクロ波の照射に要する電力を節約しながらも、当該発熱体の温度がその利用目的に鑑みて適当な温度に調節されうる。   According to the heating element of the present invention, in view of the irradiation intensity of microwaves on the heating element, the type of heating material or the type of heating material and The specific temperature can be set according to the weight ratio. Therefore, the temperature of the heating element can be adjusted to an appropriate temperature in view of the purpose of use while saving the power required for microwave irradiation to the heating element.

当該発熱体を構成要素とする本発明の加熱装置によれば、発熱体の温度が特異温度より低温の状態であるか、発熱体の温度が特異温度より高温の状態であるかの別に応じて発熱体に対するマイクロ波の照射強度の制御態様が変化させられる。したがって、発熱体へのマイクロ波の照射に要する電力を節約しながらも、当該発熱体の温度がその利用目的に鑑みて適当な温度に調節されうる。   According to the heating device of the present invention including the heating element as a constituent element, depending on whether the temperature of the heating element is lower than the singular temperature or whether the temperature of the heating element is higher than the singular temperature. The control mode of the microwave irradiation intensity with respect to the heating element is changed. Therefore, the temperature of the heating element can be adjusted to an appropriate temperature in view of the purpose of use, while saving the power required for microwave irradiation to the heating element.

本発明の発熱体を用いた加熱装置（焼成炉）の構成説明図である。It is structure explanatory drawing of the heating apparatus (baking furnace) using the heat generating body of this invention. 本発明の発熱体の発熱特性に関する説明図である。It is explanatory drawing regarding the heat_generation | fever characteristic of the heat generating body of this invention. 発熱体の特異温度に応じた加熱装置の制御方法に関する説明図である。It is explanatory drawing regarding the control method of the heating apparatus according to the specific temperature of a heat generating body. マイクロ波照射強度と発熱体の温度との関係説明図である。It is explanatory drawing of the relationship between microwave irradiation intensity | strength and the temperature of a heat generating body.

本発明の発熱体の実施形態について図面を用いて説明ずる。まず、本発明の一実施形態としての、マイクロ波を用いた加熱によって陶磁器材料またはファインセラミックス等を焼成するための焼成炉（加熱装置）１の構成について図１を用いて説明する。焼成炉１は、高反射率の素材（金属など）により構成されているキャビティ１０と、キャビティ１０の内側で被焼成体Ｘが設置される焼成室２３を画定する、マイクロ波を透過する断熱材からなる隔壁３０と、焼成室２３の壁の一部または全部を構成するように配置されている発熱体２０とを備えている。また、焼成炉１はキャビティ１０の内部空間に接続されている導波管１４，２４と、導波管１４，２４を介してキャビティ１０の内部空間にマイクロ波を放射する発振器１２，２２と、導波管１４，２４を通じて伝播してくるマイクロ波をキャビティ１０の内部空間に向けて攪拌するための攪拌羽根１８，２８と、攪拌羽根１８，２８の回転駆動源としてのモータ１６，２６とを備えている。なお、マイクロ波の周波数はたとえば２．４５ＧＨｚであるが、このほか、２８ＧＨｚ、３５ＧＨｚ等、任意に変更されうる。発振器およびこれに対応する導波管、攪拌羽根、モータの数または配置態様は必要に応じて変更されてもよい。さらに、焼成炉１は発熱体２０の温度に応じた信号を出力する温度計２１と、温度計２１の出力信号に基づいて電源（図示略）から発振器１２，２２への供給電力を制御することにより発熱体２０に照射されるマイクロ波の強度を制御する制御装置１００を備えている。たとえば、キャビティ１０および隔壁３０を貫通する穴を通じて発熱体２０を臨む放射温度計が温度計２１として採用される。   Embodiments of the heating element of the present invention will be described with reference to the drawings. First, the configuration of a firing furnace (heating device) 1 for firing ceramic materials or fine ceramics by heating using microwaves as one embodiment of the present invention will be described with reference to FIG. The firing furnace 1 includes a cavity 10 made of a highly reflective material (metal or the like) and a firing chamber 23 in which a body X to be fired is placed inside the cavity 10. And a heating element 20 arranged so as to constitute a part or all of the wall of the baking chamber 23. The firing furnace 1 includes waveguides 14 and 24 connected to the internal space of the cavity 10, oscillators 12 and 22 that radiate microwaves to the internal space of the cavity 10 through the waveguides 14 and 24, Stirrer blades 18 and 28 for agitating the microwave propagating through the waveguides 14 and 24 toward the internal space of the cavity 10, and motors 16 and 26 as rotational drive sources of the agitator blades 18 and 28. I have. The frequency of the microwave is 2.45 GHz, for example, but can be arbitrarily changed to 28 GHz, 35 GHz, and the like. The number or arrangement of the oscillators and the corresponding waveguides, stirring blades, and motors may be changed as necessary. Furthermore, the firing furnace 1 controls the power supplied from the power source (not shown) to the oscillators 12 and 22 based on the output signal of the thermometer 21 and a thermometer 21 that outputs a signal corresponding to the temperature of the heating element 20. Is provided with a control device 100 for controlling the intensity of the microwave applied to the heating element 20. For example, a radiation thermometer that faces the heating element 20 through a hole that penetrates the cavity 10 and the partition wall 30 is employed as the thermometer 21.

発熱体２０はマグネシア、ジルコニア、酸化鉄または炭化珪素等、比較的低温域で自己発熱する低温域発熱材およびアルカリ金属を含有した無機ガラスおよびこれらと同じ組成を持つ結晶質物質等の比較的高温域で自己発熱する高温域発熱材により構成される。アルカリ金属を含有した無機ガラスの例としてはソーダガラス（SiO2−Na2CO3−CaCO3の三元系物質）が、アルカリ金属を含有した無機ガラスと同じ組成を持つ結晶質物質の例としてはLi-Al-Si-O系物質（β−ユークリプタイト、スポジュメン等）がある。低温域発熱材は小さな球形または直方体状チップ状とされて、高温域発熱材で形成した内殻母材に埋め込まれてもよい。高温域発熱材により形成された内殻の外表面に、低温域発熱材により形成した小部品が配備されてもよい。内殻を形成する前の流動性原料の成分として、高温域発熱材と低温域発熱材とが所定の配合比で混合され、その原料が均一攪拌されることで、部分的に低温域発熱材が存在する原料が形成され、その原料が加圧成形、焼成等によって成形されてもよい。そのほか、発熱体２０はアルカリ金属を含有した無機ガラスおよびこれらと同じ組成を持つ結晶質物質単体により構成されてもよい。焼成室２３の壁の一部または全部を構成する発熱体２０は、その一部または全部が隔壁３０から離れて配置されていてもよい。これにより、発熱体２０により画定される焼成室２３からの熱の流出が抑制され、焼成室２３の内部温度が均一に維持されうる。 The heating element 20 has a relatively high temperature such as magnesia, zirconia, iron oxide or silicon carbide, such as a low temperature heating material that self-heats in a relatively low temperature range, an inorganic glass containing an alkali metal, and a crystalline material having the same composition as these. It is composed of a high temperature heating material that self-heats in the area. Soda glass Examples of the inorganic glass containing alkali metal (ternary material SiO 2 -Na 2 CO 3 -CaCO 3 ) is, as an example of a crystalline material having the same composition as the inorganic glass containing alkali metal Has Li-Al-Si-O-based materials (β-eucryptite, spodumene, etc.). The low temperature region heating material may be formed into a small spherical or rectangular parallelepiped chip shape and embedded in the inner shell base material formed of the high temperature region heating material. Small parts formed of the low temperature region heating material may be arranged on the outer surface of the inner shell formed of the high temperature region heating material. As a component of the flowable raw material before forming the inner shell, the high temperature region heating material and the low temperature region heating material are mixed at a predetermined blending ratio, and the raw material is uniformly stirred, so that the low temperature region heating material is partially May be formed by pressure molding, firing, or the like. In addition, the heating element 20 may be composed of an inorganic glass containing an alkali metal and a single crystalline substance having the same composition as these. A part or all of the heating element 20 constituting part or all of the wall of the baking chamber 23 may be disposed away from the partition wall 30. Thereby, the outflow of the heat from the baking chamber 23 defined by the heating element 20 is suppressed, and the internal temperature of the baking chamber 23 can be maintained uniformly.

本発明の発熱体２０は、マイクロ波の照射強度に鑑みて、発熱体２０の自己発熱特性が変化するような（自己発熱効率が著しく向上するような）特異温度Ｔ0を有する。ここで、マイクロ波の照射強度（実際には発振器１２，２２への供給電力）の制御態様と、発熱体２０の温度の時間変化態様との関係を示す図２を用いて特異温度Ｔ0について説明する。図２から明らかなように発熱体２０の温度上昇率を一定またはほぼ一定に維持するため、最初はマイクロ波の照射強度を徐々に強める必要があるが、途中からマイクロ波の照射強度を弱める必要がある。このように発熱体２０の温度を制御していく過程で、マイクロ波の照射強度の時間変化率の正負が反転する（またはマイクロ波の照射強度の時間変化率が閾値を超えて低下する）時点ｔ0における発熱体２０の温度が特異温度Ｔ0である。低温域発熱材としてのSiC（重量比率２０％）および高温域発熱材としてのLi-Al2O3-SiO（重量比率８０％）により構成されている発熱体２０の特異温度Ｔ0はおよそ７４０℃であるが、発熱材の種類および重量比率は、特異温度Ｔ0が被焼成物Ｘの焼成温度より低温になるように選定される。発熱体２０の利用目的に鑑みて適当な特異温度Ｔ0の高低が設定されるように、発熱材の種類および（発熱体２０が複数種類の発熱材よりなる場合には）重量比率はさまざまに選定されうる。 The heating element 20 of the present invention has a specific temperature T0 in which the self-heating characteristics of the heating element 20 change (the self-heating efficiency is remarkably improved) in view of the irradiation intensity of microwaves. Here, the singular temperature T0 will be described with reference to FIG. 2 showing the relationship between the control mode of the microwave irradiation intensity (actually the power supplied to the oscillators 12 and 22) and the temporal change mode of the temperature of the heating element 20. To do. As apparent from FIG. 2, in order to maintain the temperature increase rate of the heating element 20 constant or substantially constant, it is necessary to gradually increase the microwave irradiation intensity, but it is necessary to reduce the microwave irradiation intensity halfway. There is. Thus, in the process of controlling the temperature of the heating element 20, the time change rate of the microwave irradiation intensity is reversed (or the time change rate of the microwave irradiation intensity falls below the threshold). The temperature of the heating element 20 at t0 is the specific temperature T0. The specific temperature T0 of the heating element 20 composed of SiC (weight ratio 20%) as a low temperature heating material and Li—Al 2 O 3 —SiO (weight ratio 80%) as a high temperature heating material is about 740 ° C. However, the type and weight ratio of the heat generating material are selected so that the specific temperature T0 is lower than the firing temperature of the object X. Various kinds of heat generating materials and weight ratios (when the heat generating body 20 is composed of a plurality of types of heat generating materials) are selected so that appropriate high and low specific temperatures T0 are set in consideration of the purpose of use of the heat generating elements 20 Can be done.

続いて前記構成の焼成炉１の機能について図３および図４を用いて説明する。まず、制御装置１００により発振器１２，２２およびモータ１６，２６に電力が供給される。これにより発振器１２，２２から発振されて導波管１４，２４を伝播したマイクロ波が、攪拌羽根１８，２８により攪拌されて隔壁３０を介して発熱体２０に照射される。この結果、発熱体２０が徐々に自己発熱して、発熱体２０の温度および焼成室２３の内部温度が徐々に上昇していく。制御装置１００は、温度計２２の出力信号により表わされる発熱体２０の温度Ｔが特異温度Ｔ0未満であるか否かを定常的に判定する（図３／ＳＴＥＰ００２）。制御装置１００は発熱体２０の温度Ｔが特異温度Ｔ0未満であると判定した場合（図３／ＳＴＥＰ００２‥ＹＥＳ）、発熱体２０の温度が上昇するようにマイクロ波の照射強度を増加させる（図３／ＳＴＥＰ００４）。これにより、図４に示されているように、発熱体２０の温度Ｔが特異温度Ｔ0未満である第１時間帯τ１において発熱体２０の温度および被焼成物Ｘの温度が徐々に上昇していく。なお、被焼成物Ｘの温度は、キャビティ１０および隔壁３０を貫通する穴を通じて当該被焼成物Ｘを臨む放射温度計により測定されうる。   Subsequently, functions of the firing furnace 1 having the above-described configuration will be described with reference to FIGS. 3 and 4. First, the control device 100 supplies power to the oscillators 12 and 22 and the motors 16 and 26. Thus, the microwaves oscillated from the oscillators 12 and 22 and propagated through the waveguides 14 and 24 are stirred by the stirring blades 18 and 28 and irradiated to the heating element 20 through the partition wall 30. As a result, the heating element 20 gradually self-heats, and the temperature of the heating element 20 and the internal temperature of the firing chamber 23 gradually increase. The control device 100 steadily determines whether or not the temperature T of the heating element 20 represented by the output signal of the thermometer 22 is less than the singular temperature T0 (FIG. 3 / STEP002). When it is determined that the temperature T of the heating element 20 is lower than the singular temperature T0 (FIG. 3 / STEP002... YES), the control device 100 increases the irradiation intensity of the microwave so that the temperature of the heating element 20 increases (FIG. 3). 3 / STEP004). As a result, as shown in FIG. 4, the temperature of the heating element 20 and the temperature of the object X are gradually increased in the first time period τ1 in which the temperature T of the heating element 20 is less than the specific temperature T0. Go. In addition, the temperature of the to-be-baked object X can be measured with the radiation thermometer which faces the said to-be-fired object X through the hole which penetrates the cavity 10 and the partition 30.

一方、制御装置１００は発熱体２０の温度Ｔが特異温度Ｔ0以上であると判定した場合（図３／ＳＴＥＰ００２‥ＮＯ）、マイクロ波の照射強度を減少またはその上昇率を低下させる（図３／ＳＴＥＰ００６）。これにより、図４に示されているように、発熱体２０の温度Ｔが特異温度Ｔ0以上である第２時間帯τ２において発熱体２０の温度および被焼成物Ｘの温度が徐々に上昇していき、被焼成物Ｘの焼成温度である１２５０℃付近に至る。この結果、被焼成物Ｘが焼成された適当なタイミングで、マイクロ波の照射が停止される。   On the other hand, when the control device 100 determines that the temperature T of the heating element 20 is equal to or higher than the singular temperature T0 (FIG. 3 / STEP002... NO), the control unit 100 reduces the microwave irradiation intensity or decreases the rate of increase (FIG. 3 / (STEP006). As a result, as shown in FIG. 4, the temperature of the heating element 20 and the temperature of the object X are gradually increased in the second time period τ2 in which the temperature T of the heating element 20 is equal to or higher than the specific temperature T0. The temperature reaches about 1250 ° C., which is the firing temperature of the object X. As a result, the microwave irradiation is stopped at an appropriate timing when the object X is fired.

本発明の発熱体２０およびこれを用いた焼成炉１によれば、マイクロ波の照射強度に鑑みて自己発熱効率が高い温度範囲において発熱体２０が利用されるように、発熱材の種類、または、発熱材の種類および重量比率に応じて特異温度Ｔ0が設定されうる。すなわち、マイクロ波の照射強度を低下させてもまたはその増加率を抑制しても発熱体２０の温度を維持しうるまたは上昇させうるような特異温度Ｔ0以上の温度範囲において、発熱体２０が被焼成物Ｘの焼成等の目的で利用されるように当該特異温度Ｔ0が設定されうる。このため、発熱体２０の温度を上昇させていく過程で、発熱体２０の温度が対象物の焼成、調理などの利用目的に鑑みて適当な温度範囲に至った後においてはマイクロ波照射のための電力消費量をそれまでと同じ態様で上昇させなくても発熱体２０の温度をそれまでと同じような態様で上昇させることができる（図２〜図４参照）。したがって、発熱体２０へのマイクロ波の照射に要する電力を節約しながらも、当該発熱体２０の温度Ｔがその利用目的に鑑みて適当な温度に調節されうる。   According to the heating element 20 of the present invention and the firing furnace 1 using the heating element 20, the type of the heating material or The specific temperature T0 can be set according to the type and weight ratio of the heat generating material. That is, the heating element 20 is covered in a temperature range higher than the specific temperature T0 so that the temperature of the heating element 20 can be maintained or increased even if the microwave irradiation intensity is reduced or the increase rate is suppressed. The specific temperature T0 can be set so as to be used for the purpose of firing the fired product X or the like. Therefore, in the process of increasing the temperature of the heating element 20, after the temperature of the heating element 20 reaches an appropriate temperature range in view of the purpose of use such as baking and cooking of the object, microwave irradiation is performed. The temperature of the heating element 20 can be increased in the same manner as before without increasing the power consumption in the same manner as before (see FIGS. 2 to 4). Therefore, the temperature T of the heating element 20 can be adjusted to an appropriate temperature in view of the purpose of use, while saving the power required for the microwave irradiation to the heating element 20.

本発明はマイクロ波が照射されることにより自己発熱する発熱体またはこれを用いた加熱装置の製造分野、当該発熱体または加熱装置により被加熱物を加熱する必要がある技術分野等において利用されうる。   INDUSTRIAL APPLICABILITY The present invention can be used in the field of manufacturing a heating element that self-heats when irradiated with microwaves, or a heating device using the heating element, and in a technical field that requires heating an object to be heated by the heating element or heating device. .

１‥焼成炉（加熱装置）、２０‥発熱体、１２，２２‥発振器、１００‥制御装置   DESCRIPTION OF SYMBOLS 1 ... Firing furnace (heating device), 20 ... Heat generating body, 12, 22 ... Oscillator, 100 ... Control device

Claims (5)

マイクロ波が照射されることにより自己発熱する発熱材からなる発熱体であって、
マイクロ波の照射強度に鑑みて前記発熱体の自己発熱特性が変化する際の前記発熱体の温度である特異温度が、前記発熱材の種類に応じて設定されていることを特徴とする発熱体。 A heating element made of a heating material that self-heats when irradiated with microwaves,
A heating element characterized in that a specific temperature, which is the temperature of the heating element when the self-heating characteristic of the heating element changes in view of the irradiation intensity of microwaves, is set according to the type of the heating material . 請求項１記載の発熱体において、
マイクロ波が照射されることにより異なる温度域で自己発熱する２種類以上の発熱材からなり、
前記発熱材の種類に加えて、前記発熱材のそれぞれの前記発熱体に対する重量比に応じて前記特異温度が設定されていることを特徴とする発熱体。 The heating element according to claim 1,
It consists of two or more types of heat-generating materials that self-heat at different temperatures when irradiated with microwaves.
In addition to the kind of said heat generating material, the said specific temperature is set according to the weight ratio with respect to each said heat generating body of the said heat generating material, The heat generating body characterized by the above-mentioned. 請求項１または２記載の発熱体において、
前記発熱体の温度を上昇させる過程で前記発熱体に対するマイクロ波の照射強度の時間変化率が閾値を超えて低下する、または、当該マイクロ波の照射強度の時間変化率の正負が反転する際の前記発熱体の温度が前記特異温度として設定されていることを特徴とする発熱体。 The heating element according to claim 1 or 2,
In the process of increasing the temperature of the heating element, the time change rate of the microwave irradiation intensity with respect to the heating element decreases beyond a threshold value, or the sign of the time change rate of the microwave irradiation intensity is reversed. A heating element characterized in that the temperature of the heating element is set as the specific temperature. 請求項１〜３のうちいずれか１つに記載の発熱体と、マイクロ波を発振する発振器と、前記発振器への供給電力を制御することにより前記発熱体に照射されるマイクロ波のパワーを調節する制御装置とを備えている加熱装置であって、
前記制御装置が、前記発熱体の温度が前記特異温度より低温である状態と、前記発熱体またはその周辺の温度が前記特異温度より高温である状態との別に応じて前記発振器への供給電力の制御態様を変化させることを特徴とする加熱装置。 The power of the microwave irradiated to the heating element is controlled by controlling the power supplied to the heating element according to any one of claims 1 to 3, an oscillator that oscillates a microwave, and the oscillator. A heating device comprising a control device,
The control device is configured to supply power to the oscillator separately according to a state where the temperature of the heating element is lower than the singular temperature and a state where the temperature of the heating element or its surroundings is higher than the singular temperature. A heating apparatus characterized by changing a control mode. 請求項４記載の加熱装置において、
マイクロ波が前記発熱体に連続的に照射されている状態で、前記制御装置が前記第１状態における前記電力の変化率よりも、前記第２状態における前記電力の変化率が小さくなるように前記電力を制御することを特徴とする加熱装置。 The heating device according to claim 4, wherein
In a state where the heating element is continuously irradiated with microwaves, the control device reduces the power change rate in the second state to be smaller than the power change rate in the first state. A heating device characterized by controlling electric power.
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JPH08253372A (en) * 1995-03-13 1996-10-01 Chubu Electric Power Co Inc Zirconia joining device using microwave heating and jointing method
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