JP2010177663A - 薄膜太陽電池の製造方法 - Google Patents
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- 238000005245 sintering Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 76
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- 239000004020 conductor Substances 0.000 claims description 25
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- 239000007791 liquid phase Substances 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
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- 239000004332 silver Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 239000002861 polymer material Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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Abstract
【解決手段】基板上に複数の単位セルを区分する段階と;複数の単位セルで区分される基板上に複数の第1分離ラインにより単位セル別に対応する複数の透明導電層を形成する段階と;複数の透明導電層の上部に複数の第2分離ラインにより単位セル別に分離された光吸収層を形成する段階と;複数の第2分離ラインと離隔された一側に単位セル別に光吸収層を切断する第3分離ラインを形成する段階と;第3分離ラインと対応する位置にシルクスクリーンを装着して、導電性ペーストを塗布して反射物質層を形成する段階と;反射物質層を焼結して単位セル別に複数の反射電極を形成する段階を含むことを特徴とする。
【選択図】図4D
Description
C:単位セル
130:透明導電層
140:光吸収層
152:反射物質層
SC:シルクスクリーン
SL1、SL2、SL3:第1、第2、第3分離ライン
W1、W2、W3:第1、第2、第3幅
Claims (10)
- 基板上に複数の単位セルを区分する段階と;
前記複数の単位セルで区分される基板上に複数の第1分離ラインにより前記単位セル別に対応する複数の透明導電層を形成する段階と;
前記複数の透明導電層の上部に複数の第2分離ラインにより前記単位セル別に分離された光吸収層を形成する段階と;
前記複数の第2分離ラインと離隔された一側に前記単位セル別に光吸収層を切断する第3分離ラインを形成する段階と;
前記第3分離ラインと対応する位置にシルクスクリーンを装着し、導電性ペーストを塗布して反射物質層を形成する段階と;
前記反射物質層を焼結して単位セル別に複数の反射電極を形成する段階と
を含む薄膜太陽電池の製造方法。 - 前記導電性ペーストは、アルミニウム、銀、銅、モリブデン、チタン及びカドミウムのうち選択されたいずれか一つと、炭素を含む高分子物質系列のバインダーとで構成されることを特徴とする請求項1に記載の薄膜太陽電池の製造方法。
- 前記反射物質層を焼結する段階において、その温度は200〜500℃の範囲で行われる
ことを特徴とする請求項1に記載の薄膜太陽電池の製造方法。 - 前記反射物質層の粘度は、500〜50,000cpの範囲である
ことを特徴とする請求項1に記載の薄膜太陽電池の製造方法。 - 前記第3分離ラインの線幅は、20〜100μmの範囲である
ことを特徴とする請求項1に記載の薄膜太陽電池の製造方法。 - 基板上に複数の単位セルを区分する段階と;
前記複数の単位セルで区分される基板上に第1分離ラインにより前記単位セル別に対応する複数の透明導電層を形成する段階と;
前記複数の透明導電層の上部に複数の第2分離ラインにより前記単位セル別に分離された光吸収層を形成する段階と;
前記複数の第2分離ラインと離隔された一側に前記単位セル別に光吸収層を切断する第3分離ラインを形成する段階と;
前記第3分離ラインと対応する位置にシルクスクリーンを装着し、液相の導電性物質が充填されたシリンジを利用して選択的に反射物質層を滴下する段階と;
前記反射物質層を焼結して単位セル別に複数の反射電極を形成する段階と
を含む薄膜太陽電池の製造方法。 - 前記液相の導電性物質は、アルミニウム、銀、銅、モリブデン、チタン及びカドミウムのうち選択されたいずれか一つと、炭素を含む高分子物質系列の分散剤とで構成される
ことを特徴とする請求項6に記載の薄膜太陽電池の製造方法。 - 前記反射物質層を焼結する段階において、その温度は200〜500℃の範囲で行われる
ことを特徴とする請求項6に記載の薄膜太陽電池の製造方法。 - 前記反射物質層の粘度は、1〜30cpの範囲である
ことを特徴とする請求項6に記載の薄膜太陽電池の製造方法。 - 前記第3分離ラインの線幅は、20〜50μmの範囲である
ことを特徴とする請求項6に記載の薄膜太陽電池の製造方法。
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KR1020090007720A KR20100088471A (ko) | 2009-01-30 | 2009-01-30 | 박막 태양전지의 제조방법 |
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US (1) | US8361826B2 (ja) |
JP (1) | JP5535612B2 (ja) |
KR (1) | KR20100088471A (ja) |
CN (1) | CN101794838B (ja) |
TW (1) | TWI406426B (ja) |
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TWI397189B (zh) * | 2009-12-24 | 2013-05-21 | Au Optronics Corp | 製作太陽能薄膜電池之方法及其結構 |
US20120032206A1 (en) * | 2010-08-06 | 2012-02-09 | Cho Byoung Gu | Variable height light emitting diode and method of manufacture |
US8587187B2 (en) | 2010-12-06 | 2013-11-19 | Byoung GU Cho | Light diffusion of visible edge lines in a multi-dimensional modular display |
JP5168428B2 (ja) * | 2010-03-18 | 2013-03-21 | 富士電機株式会社 | 薄膜太陽電池の製造方法 |
US8563351B2 (en) * | 2010-06-25 | 2013-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing photovoltaic device |
US20130008687A1 (en) * | 2011-07-08 | 2013-01-10 | Industrial Technology Research Institute | Conductive film structure capable of resisting moisture and oxygen and electronic apparatus using the same |
FR2990300B1 (fr) * | 2012-05-04 | 2017-02-03 | Disasolar | Module photovoltaique et son procede de realisation. |
US9130113B2 (en) | 2012-12-14 | 2015-09-08 | Tsmc Solar Ltd. | Method and apparatus for resistivity and transmittance optimization in TCO solar cell films |
TWI521725B (zh) * | 2013-04-22 | 2016-02-11 | 茂迪股份有限公司 | 太陽能電池之製造方法 |
US9105799B2 (en) * | 2013-06-10 | 2015-08-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
TWI477342B (zh) * | 2013-09-12 | 2015-03-21 | Nexpower Technology Corp | 雷射切割方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61170077A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法 |
JPS62190882A (ja) * | 1986-01-30 | 1987-08-21 | シ−メンス、アクチエンゲゼルシヤフト | 薄膜太陽電池の集積直列接続方法 |
JPS63164277A (ja) * | 1986-05-30 | 1988-07-07 | Matsushita Electric Ind Co Ltd | 太陽電池の製造方法 |
JPH0227774A (ja) * | 1988-07-15 | 1990-01-30 | Fuji Electric Co Ltd | 太陽電池装置 |
JPH05218472A (ja) * | 1991-10-07 | 1993-08-27 | Siemens Ag | 薄膜構成体のレーザ加工方法 |
JPH0883922A (ja) * | 1994-09-13 | 1996-03-26 | Sharp Corp | 太陽電池およびその製造方法 |
JP2003249673A (ja) * | 2001-08-31 | 2003-09-05 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法ならびに太陽電池の製造装置 |
JP2003258274A (ja) * | 2002-02-27 | 2003-09-12 | Nissha Printing Co Ltd | 薄膜太陽電池用下部電極の製造方法 |
WO2008074879A2 (en) * | 2006-12-21 | 2008-06-26 | Helianthos B.V. | Method for making solar sub-cells from a solar cell |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783421A (en) * | 1985-04-15 | 1988-11-08 | Solarex Corporation | Method for manufacturing electrical contacts for a thin-film semiconductor device |
US4667058A (en) * | 1985-07-01 | 1987-05-19 | Solarex Corporation | Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby |
CA2024662A1 (en) * | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
KR100582552B1 (ko) * | 2004-09-23 | 2006-05-23 | 한국전자통신연구원 | 무바인더 및 고점도 나노 입자 산화물 페이스트를 이용한염료감응 태양전지의 나노 입자 산화물 전극 형성 방법 |
KR101176296B1 (ko) * | 2008-04-15 | 2012-08-22 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 알루미늄 페이스트 및 규소 태양 전지 제조시의 그 용도 |
CN101276789B (zh) * | 2008-05-07 | 2011-08-17 | 李毅 | 一种非晶硅太阳能电池铝膜蚀刻方法及蚀刻油墨 |
TW201015589A (en) * | 2008-09-05 | 2010-04-16 | Du Pont | Aluminum pastes and use thereof in the production of silicon solar cells |
CN102640231A (zh) * | 2009-11-25 | 2012-08-15 | E·I·内穆尔杜邦公司 | 用于形成钝化发射极的银背面电极以及形成背面接触硅太阳能电池的方法 |
-
2009
- 2009-01-30 KR KR1020090007720A patent/KR20100088471A/ko not_active Application Discontinuation
- 2009-12-04 US US12/591,943 patent/US8361826B2/en not_active Expired - Fee Related
- 2009-12-14 TW TW098142724A patent/TWI406426B/zh not_active IP Right Cessation
- 2009-12-14 CN CN2009102542899A patent/CN101794838B/zh not_active Expired - Fee Related
- 2009-12-24 JP JP2009292455A patent/JP5535612B2/ja not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61170077A (ja) * | 1985-01-23 | 1986-07-31 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法 |
JPS62190882A (ja) * | 1986-01-30 | 1987-08-21 | シ−メンス、アクチエンゲゼルシヤフト | 薄膜太陽電池の集積直列接続方法 |
JPS63164277A (ja) * | 1986-05-30 | 1988-07-07 | Matsushita Electric Ind Co Ltd | 太陽電池の製造方法 |
JPH0227774A (ja) * | 1988-07-15 | 1990-01-30 | Fuji Electric Co Ltd | 太陽電池装置 |
JPH05218472A (ja) * | 1991-10-07 | 1993-08-27 | Siemens Ag | 薄膜構成体のレーザ加工方法 |
JPH0883922A (ja) * | 1994-09-13 | 1996-03-26 | Sharp Corp | 太陽電池およびその製造方法 |
JP2003249673A (ja) * | 2001-08-31 | 2003-09-05 | Matsushita Electric Ind Co Ltd | 太陽電池およびその製造方法ならびに太陽電池の製造装置 |
JP2003258274A (ja) * | 2002-02-27 | 2003-09-12 | Nissha Printing Co Ltd | 薄膜太陽電池用下部電極の製造方法 |
WO2008074879A2 (en) * | 2006-12-21 | 2008-06-26 | Helianthos B.V. | Method for making solar sub-cells from a solar cell |
Also Published As
Publication number | Publication date |
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US8361826B2 (en) | 2013-01-29 |
KR20100088471A (ko) | 2010-08-09 |
US20100197072A1 (en) | 2010-08-05 |
TW201029198A (en) | 2010-08-01 |
TWI406426B (zh) | 2013-08-21 |
CN101794838B (zh) | 2013-02-13 |
CN101794838A (zh) | 2010-08-04 |
JP5535612B2 (ja) | 2014-07-02 |
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