JP2010172856A - Apparatus and method of recovering film - Google Patents

Apparatus and method of recovering film Download PDF

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JP2010172856A
JP2010172856A JP2009020329A JP2009020329A JP2010172856A JP 2010172856 A JP2010172856 A JP 2010172856A JP 2009020329 A JP2009020329 A JP 2009020329A JP 2009020329 A JP2009020329 A JP 2009020329A JP 2010172856 A JP2010172856 A JP 2010172856A
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film
laser
thin film
laser beam
recovery apparatus
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JP4472014B1 (en
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Masaaki Chikaike
正明 近池
Takashi Chikaike
貴志 近池
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02WCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00Technologies for solid waste management
    • Y02W30/20Waste processing or separation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02WCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00Technologies for solid waste management
    • Y02W30/50Reuse, recycling or recovery technologies
    • Y02W30/82Recycling of waste of electrical or electronic equipment [WEEE]

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  • Photovoltaic Devices (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To recover rare metals and organic compounds and the like that are applied to the surface of a solar cell and the like. <P>SOLUTION: In an apparatus and method of recovering a film, the film is recovered from a planar material of a solar cell or the like in which the film is applied to the surface of a light transmitting substrate. A laser beam is generated that is emitted to the film on the surface of the light transmitting substrate, the laser beam is controlled so as to be emitted from the reverse side of the light transmitting substrate to the film. While hardly affecting the light transmitting substrate, the laser beam instantaneously heats the film, making it be locally expanded/contracted, so that the boundary between the light transmitting substrate and the film is shifted, thereby destroying the adhesion between them and separating them from each other. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、透光基板の表面に膜が施された太陽電池や液晶パネル等の板材から前記膜を回収する膜回収装置及び膜回収方法に関する。   The present invention relates to a film recovery apparatus and a film recovery method for recovering the film from a plate material such as a solar cell or a liquid crystal panel having a film formed on a surface of a light-transmitting substrate.

透光基板の表面に種々の機能を有する膜が施された板材は多数生産されている。例えば、地球温暖化対策等の目的で、世界中にたくさんの太陽電池が設置され始めている。太陽電池は、発電効率の低下等により寿命を迎える。そして、世界中に設置される太陽電池は、いずれ寿命を迎えて、大量の太陽電池の廃棄物が発生してしまう。太陽電池は、パネルの面積に比例した発電量になるため、大量のパネルが回収されることが予想される。   A large number of plate materials in which films having various functions are formed on the surface of a light-transmitting substrate are produced. For example, many solar cells are being installed all over the world for the purpose of global warming countermeasures. Solar cells reach the end of their lives due to a decrease in power generation efficiency and the like. And solar cells installed around the world will eventually reach the end of their lives, and a large amount of solar cell waste will be generated. Since the solar cell has a power generation amount proportional to the area of the panel, it is expected that a large number of panels will be collected.

また、テレビ等の表示装置では、液晶パネルが主流となっており、次世代の有機ELテレビ等も含めて、寿命を迎えたパネルが大量に発生することが予想される。この結果、太陽電池や液晶パネル等の、膨大な数のパネルが回収されることになる。これらのパネルからは、外装部や表示パネル部を含めて、再生されるべき部材が大量に出るものと予想される。   In display devices such as televisions, liquid crystal panels are the mainstream, and it is expected that a large number of panels that have reached the end of their life will be generated, including next-generation organic EL televisions. As a result, a huge number of panels such as solar cells and liquid crystal panels are collected. From these panels, it is expected that a large number of members to be regenerated, including the exterior part and the display panel part, will come out.

太陽電池には、希少金属、有害金属、高額有機物等を使用して製造されている。このような太陽電池から、希少金属等を取り出すには、薬品等を用いるのが通常である。   Solar cells are manufactured using rare metals, toxic metals, expensive organic materials, and the like. In order to extract rare metals and the like from such solar cells, it is usual to use chemicals.

現在、上述のようなパネルを処理する技術としては、ガラス基板等の表面の薄膜を、化学薬品等を使用して回収する方法が一般的である。例えば太陽電池には、希少金属、有害金属、高額有機物等を使用して製造されている。このような太陽電池から、希少金属等を取り出すには、薬品等を用いるのが通常である。この薬品等を用いた回収工程としては、例えば、モジュールを粉砕する工程、粉砕物を酸で処理して薄膜の成分である金属等を溶出させる工程、金属含有固形物をケーキの状態で回収する工程、前記ケーキを多段プロセスで精製する工程等で、前記パネルが回収される。   Currently, as a technique for processing the panel as described above, a method of recovering a thin film on the surface of a glass substrate or the like using a chemical or the like is common. For example, solar cells are manufactured using rare metals, harmful metals, expensive organic substances, and the like. In order to extract rare metals and the like from such solar cells, it is usual to use chemicals. Examples of the recovery process using the chemicals include, for example, a process of pulverizing the module, a process of treating the pulverized product with an acid to elute the metal that is a component of the thin film, and recovering the metal-containing solid in a cake state. The panel is recovered in a step, a step of purifying the cake in a multistage process, or the like.

また、太陽電池、TFT液晶、カラーフィルター等の製造工程においては、金属膜や有機膜の製膜工程で不良と判断されるガラスがでる。このガラスは、その金属膜に対して酸処理をし、有機膜に対して強アルカリ溶剤等を用いて溶解して取り除く処理をして、再利用されていた。   In addition, in the manufacturing process of solar cells, TFT liquid crystals, color filters, etc., glass that is judged to be defective in the metal film or organic film forming process is produced. This glass was reused by subjecting the metal film to an acid treatment and treating the organic film by dissolving and removing it using a strong alkaline solvent or the like.

このようなパネルの処理方法としては特許文献1のようなものがある。   As a processing method of such a panel, there is a method as described in Patent Document 1.

しかしながら、パネルを粉砕して化学薬品等を用いて処理する再生方法では、人体に悪影響を及ぼす有害物質が大量に発生してしまうという問題がある。   However, in the recycling method in which the panel is crushed and treated with chemicals or the like, there is a problem that a large amount of harmful substances are adversely affected on the human body.

また、上記処理には大量の化学薬品、酸、アルカリ液等を使用するが、多量の有害金属を含む化学薬品、酸、アルカリ液等の廃液がでるため、その廃液を処理するのにコストが嵩むという問題がある。   In addition, a large amount of chemicals, acids, alkaline solutions, etc. are used for the above treatment, but wastes such as chemicals, acids, alkaline solutions, etc. containing a large amount of toxic metals are produced, so it is costly to process the waste solutions. There is a problem that it is bulky.

本発明は、上述の問題点に考慮してなされたもので、膜を固形物の状態で回収して再利用をしやすくした膜回収装置及び膜回収方法を提供することを目的とする。   The present invention has been made in consideration of the above-described problems, and an object of the present invention is to provide a membrane recovery apparatus and a membrane recovery method that facilitate recovery by recovering a membrane in a solid state.

かかる課題を解決するために、本発明は、透光基板の表面に膜が施された板材から当該膜を回収する膜回収装置及び膜回収方法である。この膜回収装置及び膜回収方法は、前記透光基板の膜に照射するレーザ光を発生させ、当該レーザ光を制御して、前記透光基板の裏面側から当該レーザ光を前記膜に照射し、前記透光基板にほとんど影響を与えずに当該膜を瞬時に加熱して局所的に膨張させると共に放熱して収縮させて前記透光基板と前記膜の境界面をずらし互いの接着を破壊して剥離することを特徴とする。   In order to solve this problem, the present invention is a film recovery apparatus and a film recovery method for recovering a film from a plate material having a film formed on the surface of a light-transmitting substrate. The film recovery apparatus and the film recovery method generate laser light to be applied to the film of the light transmitting substrate, control the laser light, and apply the laser light to the film from the back surface side of the light transmitting substrate. The film is heated instantaneously and locally expanded while hardly affecting the light-transmitting substrate, and the heat-dissipating and contracting is performed to shift the boundary surface between the light-transmitting substrate and the film and destroy the mutual adhesion. It is characterized by peeling off.

前記透光基板の裏面側から前記レーザ光を前記膜に照射して前記透光基板にほとんど影響を与えずに当該膜を瞬時に加熱して局所的に膨張させると共に放熱して収縮させ、前記透光基板と前記膜の境界面をずらして互いの接着を破壊して剥離するため、化学薬品等を必要とせずに、前記膜を固形物のままで回収することができ、回収及びその後の再利用が容易になる。   The film is irradiated with the laser light from the back side of the light-transmitting substrate, and the film is instantaneously heated and locally expanded while hardly affecting the light-transmitting substrate. Since the boundary between the translucent substrate and the film is shifted and the mutual adhesion is broken and peeled off, the film can be recovered as a solid without the need for chemicals, etc. Reuse becomes easy.

本発明の実施形態にかかる薄膜回収装置1を示す概略構成図である。It is a schematic block diagram which shows the thin film collection | recovery apparatus 1 concerning embodiment of this invention. 薄膜回収部の一例を示す概略構成図である。It is a schematic block diagram which shows an example of a thin film collection | recovery part. 薄膜回収部の他の例を示す概略構成図である。It is a schematic block diagram which shows the other example of a thin film collection | recovery part. 剥がれ落ちた薄膜の分離手段の一例を示す概略構成図である。It is a schematic block diagram which shows an example of the separation means of the thin film which peeled off.

以下に、本発明の実施形態について説明する。本発明の膜回収装置及び膜回収方法は、透光基板の表面に施される膜材を剥離して回収するものである。膜材としては種々のものがあるが、ここでは太陽電池や液晶パネル等の表面に施される薄膜を回収する場合を例に説明する。太陽電池や液晶パネル等の透光基板の表面の薄膜には、希少金属(レアメタル)や、有害金属や、有機物が含まれている。本実施形態の膜回収装置及び膜回収方法は、このような薄膜を透光基板から回収して、薄膜の成分や透光基板を再利用するための装置及び方法である。透光基板は、透明基板や半透明基板等であって、レーザ光の一部又は全部を透過する基板である。透光基板の具体例としては、半導体用石英ガラスやアクリル樹脂やフィルムやカラーフィルタやTFT基板等がある。さらに、半導体ウエハやプリント基板等の、レーザ光の一部しか透過しない半透明の基板でも、本実施形態に係る膜回収装置及び膜回収方法を適用することができる。後述するようにレーザ光の周波数等を調整して、レーザ光のエネルギーが、なるべく半透明の基板に吸収されずに、表面の積層回路等の膜に多く吸収させてその膜を破壊するようになっている。   Hereinafter, embodiments of the present invention will be described. The film recovery apparatus and the film recovery method of the present invention peel and recover a film material applied to the surface of a light transmitting substrate. There are various types of film materials. Here, a case where a thin film applied to the surface of a solar cell, a liquid crystal panel or the like is collected will be described as an example. A thin film on the surface of a light-transmitting substrate such as a solar cell or a liquid crystal panel contains a rare metal, a harmful metal, or an organic substance. The film recovery apparatus and the film recovery method of this embodiment are an apparatus and a method for recovering such a thin film from a light transmitting substrate and reusing the components of the thin film and the light transmitting substrate. The light-transmitting substrate is a transparent substrate, a translucent substrate, or the like, and is a substrate that transmits part or all of the laser light. Specific examples of the light-transmitting substrate include quartz glass for semiconductor, acrylic resin, film, color filter, and TFT substrate. Furthermore, the film recovery apparatus and the film recovery method according to the present embodiment can be applied to a translucent substrate that transmits only a part of the laser light, such as a semiconductor wafer or a printed circuit board. As will be described later, the frequency of the laser beam is adjusted so that the energy of the laser beam is not absorbed by the semitransparent substrate as much as possible, but is absorbed by the film such as the laminated circuit on the surface to destroy the film. It has become.

[膜回収装置]
まず、薄膜回収装置1を図1〜3に基づいて説明する。この薄膜回収装置1は、レーザ照射部2と、パネル搬送部3と、薄膜回収部4とから構成されている。
[Membrane recovery device]
First, the thin film collection | recovery apparatus 1 is demonstrated based on FIGS. The thin film recovery apparatus 1 includes a laser irradiation unit 2, a panel transport unit 3, and a thin film recovery unit 4.

レーザ照射部2は、レーザ発生器6と、反射ミラー7と、走査装置8と、集光レンズ9とから構成されている。なおここでは、液晶パネル10を例に説明する。液晶パネル10は、透光基板11と、この透光基板11の表面に施された薄膜12とを備えて構成されている。   The laser irradiation unit 2 includes a laser generator 6, a reflection mirror 7, a scanning device 8, and a condenser lens 9. Here, the liquid crystal panel 10 will be described as an example. The liquid crystal panel 10 includes a translucent substrate 11 and a thin film 12 applied to the surface of the translucent substrate 11.

レーザ発生器6は、ガラス等の透光基板11の表面の薄膜12に照射するレーザ光13を発生させる。レーザ発生器6は、特定波長のレーザ光13を発生させる。このレーザ光13は、透光基板11を透過してこの透光基板11に影響を及ぼさない波長のレーザ光である。例えば、波長が245〜1064ナノメーターのYAGレーザ、イットリウム・バナデート(YVO4)レーザ、エキシマレーザ、アルゴンレーザ等を用いる。さらに、薄膜12に吸収されてこの薄膜12を効率的に加熱し、薄膜12を溶かさないで膨張させる特性の波長になっている。このレーザ光13は、透光基板11をその裏面側から透過して透光基板11の表面の薄膜12を効率的に加熱する。具体的には、薄膜12の材料等の諸条件によって、薄膜12を効率的に加熱できるレーザ光13の特性が異なるため、各薄膜12に応じて、連続光、パルス光、パルス光の周波数、光の強度、光量、波長、位相、焦点等を調整して、透光基板11に影響をほとんど及ぼさないで、薄膜12を最も効率的に加熱できるレーザ光13にする。薄膜12に含まれる材料は1種類とは限らないため、透光基板11に吸収されにくく各材料に吸収されやすい波長のレーザ光13を選択する。複数のレーザ光13を選択する場合は、各レーザ光13が効率的に各材料に吸収されるように、位相や偏光も必要に応じて設定する。これにより、透光基板11にほとんど影響を及ぼさずに薄膜12を瞬時に加熱して膨張させる特性のレーザ光13を発生させる。   The laser generator 6 generates a laser beam 13 for irradiating the thin film 12 on the surface of the transparent substrate 11 such as glass. The laser generator 6 generates a laser beam 13 having a specific wavelength. The laser beam 13 is a laser beam having a wavelength that passes through the transparent substrate 11 and does not affect the transparent substrate 11. For example, a YAG laser having a wavelength of 245 to 1064 nanometers, an yttrium vanadate (YVO4) laser, an excimer laser, an argon laser, or the like is used. Furthermore, the wavelength has a characteristic of being absorbed by the thin film 12 to efficiently heat the thin film 12 and expand the thin film 12 without melting it. This laser beam 13 is transmitted through the transparent substrate 11 from the back side thereof and efficiently heats the thin film 12 on the surface of the transparent substrate 11. Specifically, since the characteristics of the laser beam 13 that can efficiently heat the thin film 12 differ depending on various conditions such as the material of the thin film 12, the continuous light, pulsed light, the frequency of the pulsed light, The light intensity, light quantity, wavelength, phase, focus, etc. are adjusted to make the laser beam 13 that can heat the thin film 12 most efficiently without affecting the light transmitting substrate 11. Since the material contained in the thin film 12 is not limited to one type, the laser beam 13 having a wavelength that is not easily absorbed by the light-transmitting substrate 11 and is easily absorbed by each material is selected. When a plurality of laser beams 13 are selected, the phase and polarization are also set as necessary so that each laser beam 13 is efficiently absorbed by each material. As a result, the laser beam 13 having the characteristic of heating and expanding the thin film 12 instantaneously without substantially affecting the translucent substrate 11 is generated.

反射ミラー7は、レーザ発生器6から発振されたレーザ光13を走査装置8まで導くためのミラーである。ここでは、2つの反射ミラー7が配設されているが、レーザ発生器6と走査装置8との位置関係に応じて適宜枚数が配設される。   The reflection mirror 7 is a mirror for guiding the laser beam 13 oscillated from the laser generator 6 to the scanning device 8. Here, the two reflecting mirrors 7 are disposed, but the number of the reflecting mirrors 7 is appropriately disposed according to the positional relationship between the laser generator 6 and the scanning device 8.

走査装置8は、前記レーザ光13を、後述するように薄膜12に対して焦点をぼかした状態を保って、液晶パネル10全体をむらなく走査させるためのビーム制御部である。走査装置8は、反射ミラー7で反射されたレーザ光13をパネルに対して走査するためのガルバノミラーを備えて構成されている。なお、ガルバノミラーの代わりにポリゴンミラー等でも良い。走査装置8による走査は、一定の面積で行われる。例えば、走査装置8で、液晶パネル10の薄膜12の全面積の1/4〜1/2の範囲を一度に走査する。この範囲は、走査装置8の機能は液晶パネル10の大きさ等によって適宜設定される。   The scanning device 8 is a beam control unit for scanning the entire liquid crystal panel 10 evenly while maintaining the state in which the laser beam 13 is defocused with respect to the thin film 12 as will be described later. The scanning device 8 includes a galvanometer mirror for scanning the panel with the laser beam 13 reflected by the reflection mirror 7. A polygon mirror or the like may be used instead of the galvanometer mirror. Scanning by the scanning device 8 is performed in a certain area. For example, the scanning device 8 scans a range of 1/4 to 1/2 of the total area of the thin film 12 of the liquid crystal panel 10 at a time. In this range, the function of the scanning device 8 is appropriately set depending on the size of the liquid crystal panel 10 and the like.

集光レンズ9は、レーザ発生器6から発生したレーザ光13を薄膜12に絞るためのレンズである。この集光レンズ9は、レーザ光13の焦点を薄膜12に正確に合わせるのではなく、薄膜12を最も効率的に加熱することができるように焦点をぼかす。即ち、レーザ光13は、薄膜12に焦点を合わせて薄膜12の一点を照射するのではなく、薄膜12に対して焦点をぼかして薄膜12のある程度の範囲を照射することで、その照射点を溶かさずに高温に加熱して膨張させるようになっている。具体的には、一旦、焦点を薄膜12に合わせてからずらし、薄膜12を最も効率的に加熱できる点を実験的に探してぼかす。これにより、レーザ光13で薄膜12のある程度の範囲の点(焦点ぼかしで多少大きくなる点)を瞬時に高温に加熱して薄膜12を溶かさずに膨張収縮させ、レーザ光13の影響をほとんど受けない透光基板11との間で膨張収縮させて互いに接着した境界面をずらして破壊して剥離させる。即ち、走査されるレーザ光13を透光基板11の裏面側から表面の薄膜12に照射して薄膜12を膨張収縮させて剥離させる。具体的には、薄膜12の一点に、走査されるレーザ光13が一瞬だけ照射されることで、薄膜12の一点が局所的に瞬時に加熱されて膨張し、次の瞬間には加熱されていない周囲に熱が伝わって瞬時に放熱される。これにより、薄膜12の一点が、瞬間的に膨張して収縮される。これに対して、透光基板11は、ほとんどレーザ光13の影響を受けないため、膨張収縮しない。薄膜12が膨張収縮し、透光基板11がほとんど変化しないため、透光基板11と薄膜12との境界面が強制的にずらされて破壊され、互いに剥がれてしまう。さらに、薄膜12の一点を膨張させて、膨張しない周囲の部分と軋轢を生じさせ、次の瞬間に放熱して収縮させることでその部分が周囲の薄膜12から引きちぎれて破壊される。これにより、レーザ光13が照射された点の薄膜12を、透光基板11から剥離して破壊するようになっている。これにより、薄膜12を、後の処理が容易な固形物のままの状態で回収する。   The condenser lens 9 is a lens for focusing the laser light 13 generated from the laser generator 6 on the thin film 12. The condensing lens 9 does not accurately focus the laser beam 13 on the thin film 12, but focuses the thin film 12 so that it can be heated most efficiently. That is, the laser beam 13 is not focused on the thin film 12 to irradiate one point of the thin film 12 but is focused on the thin film 12 to irradiate a certain range of the thin film 12, thereby irradiating the irradiation point. It is designed to expand by heating to a high temperature without melting. Specifically, the focal point is once adjusted after being shifted to the thin film 12, and the point at which the thin film 12 can be heated most efficiently is experimentally searched and blurred. As a result, the laser beam 13 instantaneously heats a point in a certain range of the thin film 12 (a point that becomes slightly larger due to focal blurring) to a high temperature to expand and contract the thin film 12 without melting it, and is almost affected by the laser beam 13. The boundary surfaces bonded to each other are expanded and contracted with the non-translucent substrate 11 so as to be destroyed and peeled off. That is, the laser beam 13 to be scanned is applied to the thin film 12 on the front surface from the back side of the transparent substrate 11 to expand and contract the thin film 12 to be peeled off. Specifically, a point of the thin film 12 is irradiated with the laser beam 13 to be scanned for a moment, so that one point of the thin film 12 is locally heated and expanded, and is heated at the next moment. Heat is transmitted to no surroundings and is immediately dissipated. Thereby, one point of the thin film 12 is instantaneously expanded and contracted. On the other hand, the translucent substrate 11 is hardly affected by the laser beam 13 and therefore does not expand or contract. Since the thin film 12 expands and contracts and the translucent substrate 11 hardly changes, the boundary surface between the translucent substrate 11 and the thin film 12 is forcibly shifted and broken, and peeled off from each other. Furthermore, one point of the thin film 12 is expanded to generate a wrinkle with a surrounding portion that does not expand, and heat is released and contracted at the next moment, whereby that portion is torn from the surrounding thin film 12 and destroyed. Thereby, the thin film 12 at the point irradiated with the laser beam 13 is peeled off from the translucent substrate 11 and destroyed. Thereby, the thin film 12 is collect | recovered in the state with the solid substance with easy later processing.

パネル搬送部3は、前記走査装置8によるレーザ光13の走査を薄膜12全体に施すことができるように、適宜液晶パネル10をずらすための装置である。パネル搬送部3は、搬送ローラ14を備えて構成されている。搬送ローラ14は、適宜駆動されて、液晶パネル10を搬送する。液晶パネル10は、この搬送ローラ14に載置され、走査装置8による走査に応じて、適宜搬送される。液晶パネル10は、その裏面を上側に向けてパネル搬送部3の搬送ローラ14に載置される。パネル搬送部3は、レーザ照射部2と共に制御部(図示せず)に接続されて、レーザ照射部2とパネル搬送部3とが連動して制御されるようになっている。パネル搬送部3は、液晶パネル10を連続的にずらしても良く、非連続的にずらしても良い。   The panel transport unit 3 is a device for appropriately shifting the liquid crystal panel 10 so that the scanning device 8 can scan the entire thin film 12 with the laser beam 13. The panel transport unit 3 includes a transport roller 14. The transport roller 14 is appropriately driven to transport the liquid crystal panel 10. The liquid crystal panel 10 is placed on the transport roller 14 and appropriately transported according to scanning by the scanning device 8. The liquid crystal panel 10 is placed on the transport roller 14 of the panel transport unit 3 with its back surface facing upward. The panel transport unit 3 is connected to a control unit (not shown) together with the laser irradiation unit 2 so that the laser irradiation unit 2 and the panel transport unit 3 are controlled in conjunction with each other. The panel transport unit 3 may shift the liquid crystal panel 10 continuously or discontinuously.

薄膜回収部4は、透光基板11から剥離して破壊して下方へ落下する薄膜12を回収するための装置である。薄膜回収部4による回収方法としては、粘着や吸引等が用いられる。粘着の場合は、粘着フィルムを用いる。この場合、薄膜回収部4は、図2に示すように、粘着フィルム15を巻いた繰り出しローラ16と、粘着フィルム15を巻き取る巻き取りローラ17とから構成されている。粘着フィルム15は、繰り出しローラ16と巻き取りローラ17とで、薄膜12へのレーザ光13の照射部分に面して配設される。これにより、レーザ光13で剥離して落下する薄膜12を粘着フィルム15で吸着して回収する。   The thin film recovery unit 4 is an apparatus for recovering the thin film 12 that is peeled off from the translucent substrate 11 and broken down. As a recovery method by the thin film recovery unit 4, adhesion, suction, or the like is used. In the case of adhesion, an adhesive film is used. In this case, as shown in FIG. 2, the thin film recovery unit 4 includes a feeding roller 16 around which the adhesive film 15 is wound and a take-up roller 17 that winds up the adhesive film 15. The adhesive film 15 is disposed by the feeding roller 16 and the take-up roller 17 so as to face a portion irradiated with the laser beam 13 on the thin film 12. As a result, the thin film 12 that is peeled off by the laser beam 13 is adsorbed and collected by the adhesive film 15.

吸引による場合は、薄膜回収部4は、図3に示すように、吸引ノズル20と、フィルタ21と、ブロア22とから構成されている。   In the case of suction, the thin film collection unit 4 includes a suction nozzle 20, a filter 21, and a blower 22, as shown in FIG.

吸引ノズル20は、剥がれ落ちる薄膜12を受け取るためのノズルである。吸引ノズル20は、漏斗状に上方へ開いて形成されている。吸引ノズル20の下端部に吸引パイプ23が接続されている。吸引ノズル20は、走査装置8による走査範囲に対応して形成されている。具体的には、吸引ノズル20を、走査装置8による走査範囲全体を覆う大きさに形成したり、吸引ノズル20を小さく形成して走査装置8による操作位置に移動に応じて吸引ノズル20を移動させるようにしたりする。   The suction nozzle 20 is a nozzle for receiving the thin film 12 that peels off. The suction nozzle 20 is formed to open upward in a funnel shape. A suction pipe 23 is connected to the lower end of the suction nozzle 20. The suction nozzle 20 is formed corresponding to the scanning range by the scanning device 8. Specifically, the suction nozzle 20 is formed to a size that covers the entire scanning range of the scanning device 8, or the suction nozzle 20 is formed to be small and moved to the operation position by the scanning device 8. Or let it be.

フィルタ21は、剥がれ落ちる薄膜12を捕集して回収するための部材である。フィルタ21は、吸引ノズル20とブロア22との間に設けられている。   The filter 21 is a member for collecting and collecting the thin film 12 that is peeled off. The filter 21 is provided between the suction nozzle 20 and the blower 22.

ブロア22は、空気を吸引するための装置である。ブロア22は、吸引パイプ23を介して吸引ノズル20に接続されている。   The blower 22 is a device for sucking air. The blower 22 is connected to the suction nozzle 20 via the suction pipe 23.

また、図4に示すように、必要に応じて分離手段24が設けられる。この分離手段24は、剥がれ落ちた膜材の磁性や比重や帯電性等の特性の違いに応じて異なる材料を分離する手段である。ここでは、分離手段24は、膜材の磁性の違いに応じて異なる材料を分離する手段として説明する。分離手段24は、搬送ダクト25と、第1高圧電極箱26と、第2高圧電極箱27と、第3高圧電極箱28を備えて構成されている。搬送ダクト25は、その先端部が、剥がれ落ちた材料を直下に望ませて設けられ、基端部にブロア29及びフィルタ30が設けられる。搬送ダクト25の途中に、第1高圧電極箱26と、第2高圧電極箱27と、第3高圧電極箱28とがそれぞれ設けられる。ブロア29は搬送ダクト25内の空気を吸引して剥がれ落ちた材料を空気と共に搬送する。フィルタ30は、第3高圧電極箱28までで捕集されなかった材料を最終的に捕集する。   Further, as shown in FIG. 4, a separating means 24 is provided as necessary. The separation means 24 is a means for separating different materials according to differences in properties such as magnetism, specific gravity, and chargeability of the film material that has been peeled off. Here, the separation means 24 will be described as means for separating different materials according to the difference in magnetic properties of the film material. The separating means 24 includes a transport duct 25, a first high voltage electrode box 26, a second high voltage electrode box 27, and a third high voltage electrode box 28. The transport duct 25 is provided with its distal end portion directly desiring the material that has been peeled off, and a blower 29 and a filter 30 are provided at the proximal end portion. A first high voltage electrode box 26, a second high voltage electrode box 27, and a third high voltage electrode box 28 are provided in the middle of the transfer duct 25, respectively. The blower 29 sucks the air in the transport duct 25 and transports the material peeled off together with the air. The filter 30 finally collects the material that has not been collected up to the third high-voltage electrode box 28.

第1高圧電極箱26は例えば5000〜5万ボルトのマイナス電極板で構成され、マイナス5000〜5万ボルトで吸着する材料を捕集する。プラス5000〜5万ボルトで吸着する材料を捕集する場合もある。それ以外の材料は反発して搬送ダクト25に押し戻される。第2高圧電極箱27は5000〜5万ボルトのプラス電極板又はマイナス電極板で構成され、プラス5000〜5万ボルト又はマイナス5000〜5万ボルトで吸着する材料を捕集する。それ以外の材料は反発して搬送ダクト25に押し戻される。第3高圧電極箱28は5000〜5万ボルトのマイナス電極板で構成され、マイナス5000〜5万ボルト又はプラス5000〜5万ボルトで吸着する材料を捕集する。それ以外の材料は反発して搬送ダクト25に押し戻される。前記各高圧電極箱の数及び印加する電圧は、剥がれ落ちる膜材の特性の違いに応じて適宜設定する。   The first high-voltage electrode box 26 is composed of, for example, a negative electrode plate of 5000 to 50,000 volts, and collects materials adsorbed at minus 5000 to 50,000 volts. In some cases, the material adsorbed at plus 5000 to 50,000 volts is collected. Other materials are repelled and pushed back to the transport duct 25. The second high-voltage electrode box 27 is composed of a positive electrode plate or a negative electrode plate of 5000 to 50,000 volts, and collects materials adsorbed at a positive 5000 to 50,000 volts or a negative 5000 to 50,000 volts. Other materials are repelled and pushed back to the transport duct 25. The third high-voltage electrode box 28 is composed of a negative electrode plate of 5000 to 50,000 volts and collects materials adsorbed at minus 5000 to 50,000 volts or plus 5000 to 50,000 volts. Other materials are repelled and pushed back to the transport duct 25. The number of the high-voltage electrode boxes and the voltage to be applied are appropriately set according to the difference in the characteristics of the film material that is peeled off.

また、分離手段24としては、剥がれ落ちた膜材の比重の違いに応じて異なる材料を分離するように構成してもよい。この場合は、例えば、剥がれ落ちる膜材の搬送経路に風を当てて軽い材料を飛ばして分離したり、比重を調整した液体に浸して浮く材料と沈む材料に分離したりする。   Further, the separating means 24 may be configured to separate different materials according to the difference in specific gravity of the film material that has been peeled off. In this case, for example, a light material is blown off and separated from the conveying path of the film material to be peeled off, or separated into a floating material and a sinking material immersed in a liquid whose specific gravity is adjusted.

また、分離手段24は、設置された液晶パネル10の直下に設置して剥がれ落ちた材料を直接分離するようにしても良く、薄膜回収部4の下流に設けて薄膜回収部4で回収した材料を分離するようにしても良い。   Further, the separating unit 24 may be installed directly below the installed liquid crystal panel 10 to directly separate the material that has been peeled off. The material collected by the thin film collecting unit 4 is provided downstream of the thin film collecting unit 4. May be separated.

[薄膜回収方法]
次に、以上のように構成された薄膜回収装置を用いた薄膜回収方法を説明する。
[Thin film recovery method]
Next, a thin film recovery method using the thin film recovery apparatus configured as described above will be described.

まず、レーザ照射部2のレーザ発生器6で液晶パネル10の透光基板11の薄膜12に照射するレーザ光13を発生させる。このレーザ光13を走査装置8に導き、走査装置8で走査させて、集光レンズ9でレーザ光13を前記薄膜12に照射する。   First, the laser generator 6 of the laser irradiation unit 2 generates a laser beam 13 that irradiates the thin film 12 of the transparent substrate 11 of the liquid crystal panel 10. The laser beam 13 is guided to the scanning device 8 and scanned by the scanning device 8, and the thin film 12 is irradiated with the laser beam 13 by the condenser lens 9.

走査装置8は、レーザ発生器6からのレーザ光13を制御して、透光基板11の裏面側からレーザ光13を薄膜12に照射して、一定範囲を捜査する。このレーザ光13によって、透光基板11にほとんど影響を与えずに薄膜12を瞬時に加熱して局所的に膨張収縮させる。これにより、薄膜12が透光基板11との境界の接着面でずらされて接着部分が破壊され、薄膜12が剥離する。これと同時に、レーザ光13の照射部分の薄膜12が瞬時に膨張収縮するのに対して、その周囲の薄膜12はほとんど熱による影響を受けずに膨張収縮しないため、軋轢が生じてレーザ光13の照射部分の薄膜12が破壊される。これにより、剥離して破壊された薄膜12が下方へ落下して薄膜回収部4で回収される。   The scanning device 8 controls the laser beam 13 from the laser generator 6 and irradiates the thin film 12 with the laser beam 13 from the back surface side of the translucent substrate 11 to investigate a certain range. With this laser beam 13, the thin film 12 is instantaneously heated and locally expanded and contracted with little influence on the transparent substrate 11. As a result, the thin film 12 is shifted on the bonding surface at the boundary with the light-transmitting substrate 11, the bonded portion is destroyed, and the thin film 12 is peeled off. At the same time, the thin film 12 irradiated with the laser beam 13 instantaneously expands and contracts, whereas the surrounding thin film 12 is hardly affected by heat and does not expand or contract. The thin film 12 in the irradiated portion is destroyed. As a result, the thin film 12 that has been peeled and destroyed falls downward and is recovered by the thin film recovery unit 4.

走査装置8で一定範囲を走査したら、パネル搬送部3で液晶パネル10をずらして、次の領域を走査装置8で走査する。   When the scanning device 8 scans a certain range, the liquid crystal panel 10 is shifted by the panel transport unit 3, and the next region is scanned by the scanning device 8.

薄膜回収部4に回収された薄膜は分離手段24で分離される。また、薄膜回収部4を設けずに分離手段24だけを設けている場合は、剥がれ落ちた薄膜12を直接回収して分離する。   The thin film collected in the thin film collection unit 4 is separated by the separation means 24. In the case where only the separation means 24 is provided without providing the thin film recovery unit 4, the peeled off thin film 12 is directly recovered and separated.

薄膜12の全面に対して走査が終了したが、外部に搬送して次の液晶パネル10をパネル搬送部3に載置して、上記同様の処理をする。   The scanning of the entire surface of the thin film 12 is completed, but the next liquid crystal panel 10 is placed on the panel transport unit 3 after being transported to the outside, and the same processing as described above is performed.

分離回収した透光基板11と薄膜12は、それぞれ再利用する。   The separated translucent substrate 11 and thin film 12 are reused.

[効果]
以上のように、薄膜12をレーザ光13で瞬時に膨張収縮させて透光基板11から剥離させて破壊するため、例えば太陽電池の希少金属(レアメタル)や有害金属や高額有機物等を容易に回収することができるようになる。
[effect]
As described above, since the thin film 12 is instantaneously expanded and contracted by the laser beam 13 and peeled off from the light transmitting substrate 11 to be destroyed, for example, rare metals (rare metals), harmful metals, expensive organic substances, etc. of solar cells are easily recovered. Will be able to.

さらに、薄膜12を、化学薬品等を使用することなく、固形物の状態で回収することができるため、透光基板11も薄膜12も容易に再利用することができる。   Furthermore, since the thin film 12 can be recovered in a solid state without using chemicals or the like, both the translucent substrate 11 and the thin film 12 can be easily reused.

これにより、希少金属、有害金属、高額有機物等の回収が低コストで容易に行えるようになる。   This makes it possible to easily collect rare metals, harmful metals, expensive organic substances, etc. at low cost.

また、剥離、破壊された薄膜12を薄膜回収部4で回収するため、破壊された薄膜12が周囲への飛散するのを防止することができ、環境の悪化を防止することができる。   In addition, since the peeled and broken thin film 12 is collected by the thin film collecting unit 4, the broken thin film 12 can be prevented from scattering to the surroundings, and environmental degradation can be prevented.

また、回収した複数種類の薄膜12を分離手段24で分離するため、効率的に分離回収することができる。   Further, since the recovered plural types of thin films 12 are separated by the separating means 24, they can be separated and recovered efficiently.

[変形例]
前記実施形態では、太陽電池や液晶パネルの表面に施された薄膜12の回収を例に説明したが、薄膜12に限らず、厚膜でも回収することができる。ある程度厚い膜の場合は、熱膨張で接着面が剥離した後、破壊されることは少なくなるが、接着面が剥離することで、基板から完全に剥がすことができ、前記実施形態同様に、厚膜を回収して再利用することができる。
[Modification]
In the said embodiment, although the collection | recovery of the thin film 12 given to the surface of a solar cell or a liquid crystal panel was demonstrated to the example, it can collect | recover not only the thin film 12 but a thick film. In the case of a somewhat thick film, the adhesive surface is less likely to be destroyed after being peeled off due to thermal expansion, but the adhesive surface is peeled off so that it can be completely peeled off from the substrate. The membrane can be recovered and reused.

前記実施形態では、一点に集光するレーザ光を用いたが、レーザ光を線状にして、液晶パネル10を一回の走査だけで処理するようにしても良い。即ち、線状のレーザ光に、前記実施形態の一点に集光するレーザ光と同様の特性を持たせて、その線状のレーザ光を用いて、液晶パネル10を走査するようにしても良い。また、同様に、広い面で液晶パネル10に照射するレーザ光でも、前記実施形態の一点に集光するレーザ光と同様の特性を持たせて、その面状のレーザ光を用いて、液晶パネル10を走査するようにしても良い。   In the above-described embodiment, the laser beam condensed at one point is used. However, the laser beam may be linear and the liquid crystal panel 10 may be processed by only one scan. That is, the linear laser beam may have the same characteristics as the laser beam focused on one point in the embodiment, and the liquid crystal panel 10 may be scanned using the linear laser beam. . Similarly, the laser light irradiated to the liquid crystal panel 10 on a wide surface is given the same characteristics as the laser light focused on one point of the above embodiment, and the liquid crystal panel is used by using the planar laser light. 10 may be scanned.

本発明は、太陽電池や、テレビ等の液晶パネル等の基板及びその表面の膜材の再利用に適用することができるが、これ以外にも、透光基板の表面に、膜材が施された板材を再利用する必要がある全ての分野において、本発明を適用することができる。   The present invention can be applied to the reuse of a substrate for a solar cell, a liquid crystal panel such as a television, and a film material on the surface thereof. In addition to this, a film material is applied to the surface of the light-transmitting substrate. The present invention can be applied in all fields where it is necessary to reuse the used plate material.

特開2001−337305号公報JP 2001-337305 A

1:薄膜回収装置、2:レーザ照射部、3:パネル搬送部、4:薄膜回収部、6:レーザ発生器、7:反射ミラー、8:走査装置、9:集光レンズ、10:液晶パネル、11:透光基板、12:薄膜、13:レーザ光、14:搬送ローラ、15:粘着フィルム、16:繰り出しローラ、17:巻き取りローラ、20:吸引ノズル、21:フィルタ、22:ブロア、23:吸引パイプ、24:分離手段、25,搬送ダクト、26:第1高圧電極箱、27:第2高圧電極箱、28:第3高圧電極箱、29:ブロア、30:フィルタ。   1: thin film collection device, 2: laser irradiation unit, 3: panel transport unit, 4: thin film collection unit, 6: laser generator, 7: reflection mirror, 8: scanning device, 9: condenser lens, 10: liquid crystal panel 11: translucent substrate, 12: thin film, 13: laser light, 14: transport roller, 15: adhesive film, 16: feeding roller, 17: take-up roller, 20: suction nozzle, 21: filter, 22: blower, 23: suction pipe, 24: separation means, 25, transfer duct, 26: first high voltage electrode box, 27: second high voltage electrode box, 28: third high voltage electrode box, 29: blower, 30: filter.

Claims (10)

透光基板の表面に膜が施された板材から当該膜を回収する膜回収装置であって、
前記透光基板の表面の膜に照射するレーザ光を発生させるレーザ発生器と、
当該レーザ発生器からのレーザ光を制御して前記透光基板の裏面側から当該レーザ光を前記膜に照射し、前記透光基板にほとんど影響を与えずに当該膜を瞬時に加熱して局所的に膨張させると共に放熱して収縮させて前記透光基板と前記膜の境界面をずらし互いの接着を破壊して剥離するビーム制御部とを備えたことを特徴とする膜回収装置。
A film recovery apparatus for recovering the film from a plate material having a film formed on the surface of the light-transmitting substrate,
A laser generator for generating a laser beam for irradiating the film on the surface of the translucent substrate;
The laser light from the laser generator is controlled to irradiate the film with the laser light from the back side of the translucent substrate, and the film is instantaneously heated with little influence on the translucent substrate. And a beam control unit that dissipates and peels off the mutual adhesion of the translucent substrate and the film by expanding and contracting heat and contracting.
請求項1に記載の膜回収装置において、
前記ビーム制御部が、前記レーザ光を前記透光基板の裏面側から前記膜に照射する際に、当該レーザ光の焦点を前記膜の表面からずらしてぼかすことを特徴とする膜回収装置。
The membrane recovery apparatus according to claim 1,
When the beam control unit irradiates the laser beam on the film from the back side of the translucent substrate, the film recovery apparatus is characterized by shifting the focal point of the laser beam from the surface of the film.
請求項1または2に記載の膜回収装置において、
前記ビーム制御部が、前記レーザ光を前記板材の全面に走査させることを特徴とする膜回収装置。
In the membrane recovery apparatus according to claim 1 or 2,
The film control apparatus, wherein the beam control unit scans the entire surface of the plate with the laser beam.
請求項1乃至3のいずれか1項に記載の膜回収装置において、
前記レーザ発生器が、前記透光基板には吸収されにくく当該透光基板の表面に施された膜の成分に吸収されやすい波長のレーザ光を発生させることを特徴とする膜回収装置。
In the membrane recovery apparatus according to any one of claims 1 to 3,
The film recovery apparatus, wherein the laser generator generates a laser beam having a wavelength that is difficult to be absorbed by the light transmitting substrate and is easily absorbed by a component of the film applied to the surface of the light transmitting substrate.
請求項4に記載の膜回収装置において、
前記レーザ発生器が、前記膜に含まれる複数の成分のそれぞれに吸収されやすい複数の波長のレーザ光をそれぞれ発生させることを特徴とする膜回収装置。
The membrane recovery apparatus according to claim 4, wherein
The film recovery apparatus, wherein the laser generator generates laser beams having a plurality of wavelengths that are easily absorbed by a plurality of components included in the film.
請求項1乃至5のいずれか1項に記載の膜回収装置において、
前記透光基板の表面に施される膜が薄膜であることを特徴とする膜回収装置。
In the membrane recovery apparatus according to any one of claims 1 to 5,
A film recovery apparatus, wherein the film applied to the surface of the translucent substrate is a thin film.
請求項1乃至6のいずれか1項に記載の膜回収装置において、
剥離した前記膜材の磁性や比重や帯電性等の特性の違いに応じて異なる材料を分離する分離手段を備えたことを特徴とする膜回収装置。
The membrane recovery apparatus according to any one of claims 1 to 6,
A membrane recovery apparatus comprising separation means for separating different materials according to differences in properties such as magnetism, specific gravity, and chargeability of the peeled membrane material.
透光基板の表面に膜が施された板材から当該膜を回収する膜回収方法であって、
レーザ発生器で前記透光基板の膜に照射するレーザ光を発生させ、
ビーム制御部で前記レーザ発生器からのレーザ光を制御して、前記透光基板の裏面側から当該レーザ光を前記膜に照射して前記透光基板に影響を与えずに当該膜を瞬時に加熱して局所的に熱膨張させ、前記透光基板と前記膜の境界面をずらして互いの接着を破壊して剥離することを特徴とする膜回収方法。
A film recovery method for recovering a film from a plate material having a film applied to the surface of a light-transmitting substrate,
A laser generator is used to generate a laser beam that irradiates the film of the transparent substrate,
A beam controller controls laser light from the laser generator, and the film is irradiated with the laser light from the back side of the translucent substrate to instantaneously apply the film without affecting the translucent substrate. A method of recovering a film, comprising heating and locally expanding the film, shifting a boundary surface between the translucent substrate and the film to break and peel each other's adhesion.
請求項8に記載の膜回収方法において、
前記レーザ光を前記板材の全面に走査させることを特徴とする膜回収方法。
The membrane recovery method according to claim 8,
A method of recovering a film, comprising: scanning the entire surface of the plate with the laser beam.
請求項8又は9に記載の膜回収方法において、
剥離した前記膜材の磁性や比重や帯電性等の特性の違いに応じて異なる材料を分離することを特徴とする膜回収方法。
The membrane recovery method according to claim 8 or 9,
A film recovery method comprising separating different materials according to differences in properties such as magnetism, specific gravity, and chargeability of the peeled film material.
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Citations (6)

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JPS6114727A (en) * 1984-06-29 1986-01-22 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPH05218472A (en) * 1991-10-07 1993-08-27 Siemens Ag Laser beam machining method of thin-film structure
JP2002540950A (en) * 1999-04-07 2002-12-03 シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング Apparatus and method for peeling a thin layer on a carrier material
JP2003285185A (en) * 2002-03-25 2003-10-07 Sumitomo Heavy Ind Ltd Laser beam machining method
JP2008268735A (en) * 2007-04-24 2008-11-06 Sharp Corp Liquid crystal panel treatment method
JP2009045626A (en) * 2007-08-13 2009-03-05 Fuji Electric Systems Co Ltd Laser beam machining apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114727A (en) * 1984-06-29 1986-01-22 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPH05218472A (en) * 1991-10-07 1993-08-27 Siemens Ag Laser beam machining method of thin-film structure
JP2002540950A (en) * 1999-04-07 2002-12-03 シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング Apparatus and method for peeling a thin layer on a carrier material
JP2003285185A (en) * 2002-03-25 2003-10-07 Sumitomo Heavy Ind Ltd Laser beam machining method
JP2008268735A (en) * 2007-04-24 2008-11-06 Sharp Corp Liquid crystal panel treatment method
JP2009045626A (en) * 2007-08-13 2009-03-05 Fuji Electric Systems Co Ltd Laser beam machining apparatus

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