JP2010161340A - 化学気相蒸着装置 - Google Patents
化学気相蒸着装置 Download PDFInfo
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- JP2010161340A JP2010161340A JP2009239793A JP2009239793A JP2010161340A JP 2010161340 A JP2010161340 A JP 2010161340A JP 2009239793 A JP2009239793 A JP 2009239793A JP 2009239793 A JP2009239793 A JP 2009239793A JP 2010161340 A JP2010161340 A JP 2010161340A
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- substrate
- exhaust
- vapor deposition
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- deposition apparatus
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000002245 particle Substances 0.000 claims abstract description 54
- 239000007789 gas Substances 0.000 claims abstract description 18
- 239000012495 reaction gas Substances 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】本発明の一実施例による化学気相蒸着装置は、反応ガスが供給され基板がエピ成長されるようにする反応チャンバを形成する基板の天井部と、上記基板の天井部と分離され、エピ成長反応後の排気ガスが排出される排気部とを含み、上記排気部は、上記基板がエピ成長する場合に発生するパーティクルが付着されるパーティクル形成部が具備されることができる。
【選択図】図2
Description
20 サセプタ
24 基板の収容溝
40 加熱部
50 基板の天井部
52 排気部の天井部
60 排気部
62 排気路
Claims (10)
- 反応ガスが供給され、基板がエピ成長されるようにする反応チャンバを形成する基板の天井部と、
前記基板の天井部と分離され、エピ成長反応後の排気ガスが排出される排気部とを含み、
前記排気部は、前記基板がエピ成長する場合に発生するパーティクルが付着されるパーティクル形成部が具備される化学気相蒸着装置。 - 前記基板の天井部は、前記パーティクル形成部の上部に対応される部分は折り曲げられ排気部天井部を形成することを特徴とする請求項1に記載の化学気相蒸着装置。
- 前記パーティクル形成部は、上部プレートと下部プレートに分かれ、
前記上部プレートと下部プレートは、連結ロッドで連結されて空間を形成し、その空間を通して反応後のガスが排出され、
前記下部プレートには排気溝が形成されることを特徴とする請求項1または2に記載の化学気相蒸着装置。 - 前記パーティクル形成部は、上部プレートと下部プレートに分かれ、
前記上部プレートと下部プレートは、連結ロッドで連結されて空間を形成し、その空間を通して反応後のガスが排出され、
前記下部プレートは、排気ガスが排出される排気路が形成される胴体部と連通されることを特徴とする請求項1または2に記載の化学気相蒸着装置。 - 前記上部プレートの底面には、パーティクルが付着される断面積を広げるためにカバー部材が更に具備されることを特徴とする請求項3または4に記載の化学気相蒸着装置。
- 前記上部プレートは、パーティクルが付着される断面積を広げるために折曲 形成されることを特徴とする請求項3または4に記載の化学気相蒸着装置。
- 前記上部プレートの底面には、パーティクルが付着される断面積を広げるために円錐形状の円錐部が形成されることを特徴とする請求項3または4に記載の化学気相蒸着装置。
- 前記排気部は、排気部の安着部に挿入されて支持され、脱着可能であることを特徴とする請求項1から7の何れか1項に記載の化学気相蒸着装置。
- 反応ガスが供給され基板がエピ成長されるように反応チャンバを覆う反応チャンバのカバーと、
前記反応チャンバのカバーと連結され、基板の上部から発生されるパーティクルが付着される基板の天井部と、
前記基板の天井部と分離され、エピ成長反応後の排気ガスが排出される排気部とを含み、
前記排気部は、前記基板がエピ成長する時に発生するパーティクルが付着されるパーティクル形成部が具備される化学気相蒸着装置。 - 前記反応チャンバのカバーは、サセプタを収容するフレームを密閉し、前記反応チャンバが形成されるように前記フレームの外側に具備される反応チャンバのカバー支持フレームにヒンジで連結されることを特徴とする請求項9に記載の化学気相蒸着装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0002398 | 2009-01-12 | ||
KR1020090002398A KR101046119B1 (ko) | 2009-01-12 | 2009-01-12 | 화학 기상 증착 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010161340A true JP2010161340A (ja) | 2010-07-22 |
JP4996664B2 JP4996664B2 (ja) | 2012-08-08 |
Family
ID=42318123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009239793A Expired - Fee Related JP4996664B2 (ja) | 2009-01-12 | 2009-10-16 | 化学気相蒸着装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100175620A1 (ja) |
JP (1) | JP4996664B2 (ja) |
KR (1) | KR101046119B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103329249B (zh) * | 2010-12-20 | 2016-08-10 | 三星电子株式会社 | 化学气相沉积设备和使用该设备制造发光器件的方法 |
WO2012139006A2 (en) * | 2011-04-07 | 2012-10-11 | Veeco Instruments Inc. | Metal-organic vapor phase epitaxy system and process |
US20140224176A1 (en) * | 2011-08-09 | 2014-08-14 | Samsung Electronics Co., Ltd. | Mocvd apparatus |
US8826857B2 (en) * | 2011-11-21 | 2014-09-09 | Lam Research Corporation | Plasma processing assemblies including hinge assemblies |
WO2013147377A1 (ko) * | 2012-03-30 | 2013-10-03 | 주식회사 테스 | 기상 증착 장치 |
CN114892265A (zh) * | 2022-04-13 | 2022-08-12 | 中国电子科技集团公司第四十八研究所 | 一种外延生长反应装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63134664A (ja) * | 1986-11-26 | 1988-06-07 | Hitachi Electronics Eng Co Ltd | Cvd薄膜形成装置 |
JPH11135296A (ja) * | 1997-07-14 | 1999-05-21 | Applied Materials Inc | マルチモードアクセスを有する真空処理チャンバ |
JP2004063783A (ja) * | 2002-07-29 | 2004-02-26 | Nanoteco Corp | Cvd装置、半導体結晶成長用基板、及び半導体デバイスの製造方法 |
JP2005045170A (ja) * | 2003-07-25 | 2005-02-17 | Tokyo Electron Ltd | ガス反応装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6095083A (en) * | 1991-06-27 | 2000-08-01 | Applied Materiels, Inc. | Vacuum processing chamber having multi-mode access |
KR100703214B1 (ko) * | 2006-01-02 | 2007-04-09 | 삼성전기주식회사 | 유성형 화학 기상 증착 장치 |
US20070215036A1 (en) * | 2006-03-15 | 2007-09-20 | Hyung-Sang Park | Method and apparatus of time and space co-divided atomic layer deposition |
-
2009
- 2009-01-12 KR KR1020090002398A patent/KR101046119B1/ko not_active IP Right Cessation
- 2009-10-15 US US12/580,145 patent/US20100175620A1/en not_active Abandoned
- 2009-10-16 JP JP2009239793A patent/JP4996664B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63134664A (ja) * | 1986-11-26 | 1988-06-07 | Hitachi Electronics Eng Co Ltd | Cvd薄膜形成装置 |
JPH11135296A (ja) * | 1997-07-14 | 1999-05-21 | Applied Materials Inc | マルチモードアクセスを有する真空処理チャンバ |
JP2004063783A (ja) * | 2002-07-29 | 2004-02-26 | Nanoteco Corp | Cvd装置、半導体結晶成長用基板、及び半導体デバイスの製造方法 |
JP2005045170A (ja) * | 2003-07-25 | 2005-02-17 | Tokyo Electron Ltd | ガス反応装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4996664B2 (ja) | 2012-08-08 |
KR101046119B1 (ko) | 2011-07-01 |
KR20100083041A (ko) | 2010-07-21 |
US20100175620A1 (en) | 2010-07-15 |
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